Patents by Inventor Takashi Hinotsu

Takashi Hinotsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110192457
    Abstract: In order to provide an electro-conductive paste bringing no increase of the contact resistance for forming an electrode of a solar cell device, the electro-conductive paste is characterized by containing an electro-conductive particle, an organic binder, a solvent, a glass frit, and an organic compound including alkaline earth metal, a metal with a low melting point or a compound affiliated with a metal with a low melting point.
    Type: Application
    Filed: July 7, 2009
    Publication date: August 11, 2011
    Applicant: KYOTO ELEX CO., LTD.
    Inventors: Masashi Nakayama, Nobuo Ochiai, Takashi Hinotsu, Yutaka Nakayama, Masami Sakuraba, Wataru Fujimori
  • Publication number: 20080081178
    Abstract: After fluid material containing transparent conducting fine particles is coated on a substrate to form a coating film, and the transparent conducting fine particles are sintered by irradiating an electromagnetic wave after pressure is added to this coating film. For example, the pressure is added to the coating film so that density of the coating film becomes 3.0 g/cm3 or more. Besides, for example, the pressure is added to a surface of the coating film by means of a roll press. Besides, for example, a line pressure of the roll press is set to be 200 kg/cm or more. Besides, for example, the irradiated electromagnetic wave is a microwave of 1 GHz to 1 THz.
    Type: Application
    Filed: September 20, 2007
    Publication date: April 3, 2008
    Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.
    Inventors: Takashi Hinotsu, Koji Tanoue
  • Publication number: 20080047466
    Abstract: The change in resistance over time of a low-resistance acicular ITO powder is reduced, and the stability of the ITO powder in ambient air is improved. Tin-containing indium hydroxide baked in an atmosphere of an inert gas and reducing gas is processed for a predetermined time under a water-containing atmosphere of inert gas and/or reducing gas at a temperature of 0° C. or greater and 100° C. or less, and is then exposed to air.
    Type: Application
    Filed: March 22, 2007
    Publication date: February 28, 2008
    Applicant: DOWA ELECTRONICS MATERIALS CO., LTD
    Inventors: Koji Tanoue, Shinichi Konno, Takashi Hinotsu