Patents by Inventor Takashi Hiroi

Takashi Hiroi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220084856
    Abstract: The objective of the present invention is provide a defect inspection apparatus that increases defect position precision and can easily align a coordinate origin offset between a reviewing apparatus and the defect inspection apparatus, even when design data cannot be obtained or it is difficult to sufficiently use the design data. The defect inspection apparatus according to the present invention acquires a wafer swath image necessary for inspection, and uses the swath image to detect defects and calculate a positional deviation amount. During the calculation of the positional deviation amount, a template pattern is acquired from one arbitrary swath image via an image processing unit, and the template pattern and a plurality of swath images of the entire wafer are compared, whereby the positional deviation amount for a position corresponding to the template pattern on the wafer is calculated.
    Type: Application
    Filed: March 6, 2019
    Publication date: March 17, 2022
    Inventors: Takashi HIROI, Nobuaki HIROSE, Takahiro URANO
  • Publication number: 20210381989
    Abstract: The purpose of this invention is to make it possible to efficiently and accurately detect a reticle defect at an earlier stage in a manufacturing process. The inspection device according to this invention uses the results of comparing die images of wafers that have had patterns transferred thereto using the same reticle after subjecting the die images to averaging processing and the results of comparing the die images without subjecting the same to averaging processing to distinguish a random defect signal caused by a huge defect, or the like, and having an extremely high brightness from a repeated defect signal, and only extracts repeated defects with higher accuracy.
    Type: Application
    Filed: October 16, 2019
    Publication date: December 9, 2021
    Inventors: Takashi HIROI, Nobuaki HIROSE, Takahiro URANO
  • Patent number: 11041815
    Abstract: An inspection information generation device includes a design information acquirer configured to acquire design information of a sample to be inspected, a candidate region extractor configured to use the design information to extract multiple candidate regions, an image capturer configured to capture images of the multiple candidate regions, a similarity calculator configured to use the images of the multiple candidate regions to calculate a similarity or distance between the multiple candidate regions, and a region determiner configured to use the similarity or the distance to determine, as inspection information, at least one reference region corresponding to a region to be inspected.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: June 22, 2021
    Assignee: HITACHI HIGH-TECH CORPORATION
    Inventors: Takahiro Urano, Toshifumi Honda, Takashi Hiroi, Nobuaki Hirose
  • Publication number: 20190154593
    Abstract: An inspection information generation device includes a design information acquirer configured to acquire design information of a sample to be inspected, a candidate region extractor configured to use the design information to extract multiple candidate regions, an image capturer configured to capture images of the multiple candidate regions, a similarity calculator configured to use the images of the multiple candidate regions to calculate a similarity or distance between the multiple candidate regions, and a region determiner configured to use the similarity or the distance to determine, as inspection information, at least one reference region corresponding to a region to be inspected.
    Type: Application
    Filed: May 23, 2016
    Publication date: May 23, 2019
    Inventors: Takahiro URANO, Toshifumi HONDA, Takashi HIROI, Nobuaki HIROSE
  • Patent number: 9858659
    Abstract: Provided is a pattern inspecting and measuring device that decreases the influence of noise and the like and increases the reliability of an inspection or measurement result during inspection or measurement using the position of an edge extracted from image data obtained by imaging a pattern as the object of inspection or measurement. For this purpose, in the pattern inspecting and measuring device in which inspection or measurement of an inspection or measurement object pattern is performed using the position of the edge extracted, with the use of an edge extraction parameter, from the image data obtained by imaging the inspection or measurement object pattern, the edge extraction parameter is generated using a reference pattern having a shape as an inspection or measurement reference and the image data.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: January 2, 2018
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Tsuyoshi Minakawa, Takashi Hiroi, Takeyuki Yoshida, Taku Ninomiya, Takuma Yamamoto, Hiroyuki Shindo, Fumihiko Fukunaga, Yasutaka Toyoda, Shinichi Shinoda
  • Patent number: 9188554
    Abstract: Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit for generating a simulated electron beam image using a parameter indicating the characteristics of the electron beam image on the basis of design data; and an inspection unit for comparing the electron beam image of the pattern, which is the image captured by the image capturing unit, and the simulated electron beam image generated by the simulated electron beam image generation unit, and inspecting the pattern on the substrate.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: November 17, 2015
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Chie Shishido, Shinya Murakami, Takashi Hiroi, Taku Ninomiya, Michio Nakano
  • Publication number: 20150228063
    Abstract: Provided is a pattern inspecting and measuring device that decreases the influence of noise and the like and increases the reliability of an inspection or measurement result during inspection or measurement using the position of an edge extracted from image data obtained by imaging a pattern as the object of inspection or measurement. For this purpose, in the pattern inspecting and measuring device in which inspection or measurement of an inspection or measurement object pattern is performed using the position of the edge extracted, with the use of an edge extraction parameter, from the image data obtained by imaging the inspection or measurement object pattern, the edge extraction parameter is generated using a reference pattern having a shape as an inspection or measurement reference and the image data.
    Type: Application
    Filed: October 11, 2013
    Publication date: August 13, 2015
    Inventors: Tsuyoshi Minakawa, Takashi Hiroi, Takeyuki Yoshida, Taku Ninomiya, Takuma Yamamoto, Hiroyuki Shindo, Fumihiko Fukunaga, Yasutaka Toyoda, Shinichi Shinoda
  • Publication number: 20150212019
    Abstract: Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit for generating a simulated electron beam image using a parameter indicating the characteristics of the electron beam image on the basis of design data; and an inspection unit for comparing the electron beam image of the pattern, which is the image captured by the image capturing unit, and the simulated electron beam image generated by the simulated electron beam image generation unit, and inspecting the pattern on the substrate.
    Type: Application
    Filed: May 22, 2013
    Publication date: July 30, 2015
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Chie Shishido, Shinya Murakami, Takashi Hiroi, Taku Ninomiya, Michio Nakano
  • Patent number: 8953868
    Abstract: A defect inspection method comprising: picking up an image of a subject under inspection to thereby acquire an inspection image; extracting multiple templates corresponding to multiple regions, respectively from design data of the subject under inspection; finding a first misregistration amount between the inspection image and the design data using a first template as any one template selected from among the plural templates; finding a second misregistration amount between the inspection image and the design data using a second template other than the first template, the second template being selected from among the plural templates, and the first misregistration-amount; and converting the design data, misregistration thereof being corrected using the first misregistration-amount, and the second misregistration-amount, into a design data image, and comparing the design data image with the inspection image to thereby detect a defect of the subject under inspection.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: February 10, 2015
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Shinya Murakami, Chie Shishido, Takashi Hiroi, Taku Ninomiya, Tsuyoshi Minakawa, Atsushi Miyamoto
  • Patent number: 8853628
    Abstract: A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.
    Type: Grant
    Filed: April 5, 2011
    Date of Patent: October 7, 2014
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Naoki Hosoya, Toshifumi Honda, Takashi Hiroi
  • Patent number: 8658987
    Abstract: Provided is a circuit-pattern inspection device which enables efficient inspection of a semiconductor wafer by selectively inspecting areas on the semiconductor wafer, such as boundaries between patterns thereon, where defects are likely to occur during the step of producing the semiconductor wafer while changing the beam scanning direction for each area. Two-dimensional beam-deflection control is employed for inspection operations in a continuous-stage-movement-type circuit-pattern inspection device in which only one-dimensional scanning has been employed conventionally. That is, by employing a combination of an electron-beam-deflection control in a first direction parallel to the stage-movement direction and an electron-beam-deflection control in a second direction intersecting the stage-movement direction, it is possible to obtain an image of any desired area for inspection that is set within a swath.
    Type: Grant
    Filed: February 21, 2011
    Date of Patent: February 25, 2014
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takuma Yamamoto, Takashi Hiroi, Yusuke Ominami
  • Publication number: 20130322737
    Abstract: A defect inspection method comprising: picking up an image of a subject under inspection to thereby acquire an inspection image; extracting multiple templates corresponding to multiple regions, respectively from design data of the subject under inspection; finding a first misregistration amount between the inspection image and the design data using a first template as any one template selected from among the plural templates; finding a second misregistration amount between the inspection image and the design data using a second template other than the first template, the second template being selected from among the plural templates, and the first misregistration-amount; and converting the design data, misregistration thereof being corrected using the first misregistration-amount, and the second misregistration-amount, into a design data image, and comparing the design data image with the inspection image to thereby detect a defect of the subject under inspection.
    Type: Application
    Filed: May 30, 2013
    Publication date: December 5, 2013
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Shinya MURAKAMI, Chie SHISHIDO, Takashi HIROI, Taku NINOMIYA, Tsuyoshi MINAKAWA, Atsushi MIYAMOTO
  • Publication number: 20130271595
    Abstract: Provided are a high speed circuit pattern inspecting method and inspecting device which have a short preparation time for inspection and are capable of determining a defect by detecting only an image of one die. A coordinate which is expected to obtain the same pattern as a corresponding coordinate and an alignment coordinate are selected by referring to design information. The detected image and the design information are aligned using the alignment coordinate to correct the deviated amount and a pattern of the corresponding coordinate is compared with a pattern of the coordinate which is expected to obtain the same pattern to compare the patterns by detecting only an image of one die.
    Type: Application
    Filed: November 11, 2011
    Publication date: October 17, 2013
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Takashi Hiroi, Masaaki Nojiri, Takuma Yamamoto, Taku Ninomiya
  • Publication number: 20130248709
    Abstract: A semiconductor wafer 11 is irradiated for scanning with a charged particle beam 6 so as to detect secondary charged particles 9 obtained from the wafer 11 as a result of the irradiation of the beam 6. A detected image of an inspection area obtained based on scanning information and on a detection signal derived from the secondary charged particles 9 is compared with a detected image of a reference area to find a difference therebetween. The difference is compared with a threshold value to detect a defect candidate. Defect information including positional information about the defect candidate is generated in such a manner as to include a relative position of a predetermined feature point within each of repeat patterns formed on the semiconductor wafer 11 with regard to the origin of a coordinate area established in each of these repeat patterns, and a relative position of the defect candidate with regard to the feature point.
    Type: Application
    Filed: November 24, 2011
    Publication date: September 26, 2013
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Takuma Yamamoto, Takashi Hiroi, Hiroshi Miyai
  • Patent number: 8509516
    Abstract: Provided is an examination technique to detect defects with high sensitivity at an outer-most repetitive portion of a memory mat of a semiconductor device and even in a peripheral circuit having no repetitiveness. A circuit pattern inspection apparatus comprises an image detection unit for acquiring an image of a circuit pattern composed of multiple die having a repetitive pattern, a defect judgment unit which composes, in respect of an acquired detected image, reference images by switching addition objectives depending on regions of repetitive pattern and the other regions and compares a composed reference image with the detected image to detect a defect, and a display unit for displaying the image of the detected defect.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: August 13, 2013
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takashi Hiroi, Takeyuki Yoshida, Naoki Hosoya, Toshifumi Honda
  • Publication number: 20130119250
    Abstract: A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.
    Type: Application
    Filed: April 5, 2011
    Publication date: May 16, 2013
    Inventors: Naoki Hosoya, Toshifumi Honda, Takashi Hiroi
  • Patent number: 8421010
    Abstract: There is provided a substrate inspection device which uses a charged particle beam and is capable of more quickly extracting a defect candidate than ever before. The configuration of the substrate inspection device is such that a substrate having a circuit pattern is irradiated with a primary charged particle beam, the substrate is moved at a constant speed or at an increasing or a decreasing speed, a position resulting from the movement is monitored, the position of irradiation with the primary charged particle beam is controlled according to the coordinates of the substrate, an image in a partial region on the substrate is captured at a speed lower than the velocity of the movement, a defect candidate is detected based on the captured image, and the detected defect candidate is displayed in a map format.
    Type: Grant
    Filed: August 28, 2009
    Date of Patent: April 16, 2013
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Takashi Hiroi, Yasuhiro Gunji, Hiroshi Miyai, Masaaki Nojiri
  • Publication number: 20130082177
    Abstract: High-speed inspection is performed with appropriate sensitivity according to the pattern density and pattern characteristic of a device. The pixel dimension used in image acquisition is changed in accordance with the pattern density of a device. An image is acquired at high speed by changing the beam scan speed and the stage drive speed in accordance with the pixel dimension and eliminating an error by controlling the amount of beam delay. The acquired image is so resampled that the image dimensions of the acquired image and a reference image are equally sized, and the acquired image and the reference image are then aligned with each other. The aligned images are resampled in accordance with a preset pixel dimension to extract a difference between the images with the sensitivity according to the pixel dimension.
    Type: Application
    Filed: May 13, 2011
    Publication date: April 4, 2013
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Takashi Hiroi, Mari Nozoe, Takuma Yamamoto, Masaaki Nojiri, Mitsuru Okamura
  • Publication number: 20130010100
    Abstract: In a process of acquiring an image of semiconductor patterns by using a scanning electron microscope (SEM), this invention provides an image generating method and device that allows a high-resolution SEM image to be produced while suppressing damages caused by SEM imaging to a sample as a result of irradiation of an electron beam. A plurality of areas having similarly shaped patterns (similar areas) are extracted from a low-resolution SEM image which has been imaged while suppressing the irradiation energy of electron beam. From the image data of the extracted areas a single high resolution image of the patterns is generated by image restoration processing. Further, the method of this invention also uses design data in determining the similar areas and the SEM imaging position and imaging range for performing the image restoration processing.
    Type: Application
    Filed: March 4, 2011
    Publication date: January 10, 2013
    Inventors: Go Kotaki, Atsushi Miyamoto, Kenji Nakahira, Takashi Hiroi
  • Publication number: 20120305768
    Abstract: Provided is a circuit-pattern inspection device which enables efficient inspection of a semiconductor wafer by selectively inspecting areas on the semiconductor wafer, such as boundaries between patterns thereon, where defects are likely to occur during the step of producing the semiconductor wafer while changing the beam scanning direction for each area. Two-dimensional beam-deflection control is employed for inspection operations in a continuous-stage-movement-type circuit-pattern inspection device in which only one-dimensional scanning has been employed conventionally. That is, by employing a combination of an electron-beam-deflection control in a first direction parallel to the stage-movement direction and an electron-beam-deflection control in a second direction intersecting the stage-movement direction, it is possible to obtain an image of any desired area for inspection that is set within a swath.
    Type: Application
    Filed: February 21, 2011
    Publication date: December 6, 2012
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Takuma Yamamoto, Takashi Hiroi, Yusuke Ominami