Abstract: The purpose of this invention is to make it possible to efficiently and accurately detect a reticle defect at an earlier stage in a manufacturing process. The inspection device according to this invention uses the results of comparing die images of wafers that have had patterns transferred thereto using the same reticle after subjecting the die images to averaging processing and the results of comparing the die images without subjecting the same to averaging processing to distinguish a random defect signal caused by a huge defect, or the like, and having an extremely high brightness from a repeated defect signal, and only extracts repeated defects with higher accuracy.

Abstract: The purpose of the present invention is to provide a defect inspection device with which it is possible to determine a defect candidate position more accurately than before, even when design data cannot be obtained or are difficult to be utilized sufficiently. The present invention solves the problem by: setting an appropriate reference die or reference chip over a wafer to be inspected; setting, with respect to each of swath channel die images obtained by dividing a reference die swath image into a plurality of portions and detecting the portions, one or more reference patterns; correcting a position error of a swath image obtained from another die to be inspected, using the reference pattern for each swath channel image; and performing defect detection using the corrected swath channel image (FIG. 5B).

Abstract: The objective of the present invention is provide a defect inspection apparatus that increases defect position precision and can easily align a coordinate origin offset between a reviewing apparatus and the defect inspection apparatus, even when design data cannot be obtained or it is difficult to sufficiently use the design data. The defect inspection apparatus according to the present invention acquires a wafer swath image necessary for inspection, and uses the swath image to detect defects and calculate a positional deviation amount. During the calculation of the positional deviation amount, a template pattern is acquired from one arbitrary swath image via an image processing unit, and the template pattern and a plurality of swath images of the entire wafer are compared, whereby the positional deviation amount for a position corresponding to the template pattern on the wafer is calculated.

Abstract: The purpose of this invention is to make it possible to efficiently and accurately detect a reticle defect at an earlier stage in a manufacturing process. The inspection device according to this invention uses the results of comparing die images of wafers that have had patterns transferred thereto using the same reticle after subjecting the die images to averaging processing and the results of comparing the die images without subjecting the same to averaging processing to distinguish a random defect signal caused by a huge defect, or the like, and having an extremely high brightness from a repeated defect signal, and only extracts repeated defects with higher accuracy.

Abstract: An inspection information generation device includes a design information acquirer configured to acquire design information of a sample to be inspected, a candidate region extractor configured to use the design information to extract multiple candidate regions, an image capturer configured to capture images of the multiple candidate regions, a similarity calculator configured to use the images of the multiple candidate regions to calculate a similarity or distance between the multiple candidate regions, and a region determiner configured to use the similarity or the distance to determine, as inspection information, at least one reference region corresponding to a region to be inspected.

Abstract: An inspection information generation device includes a design information acquirer configured to acquire design information of a sample to be inspected, a candidate region extractor configured to use the design information to extract multiple candidate regions, an image capturer configured to capture images of the multiple candidate regions, a similarity calculator configured to use the images of the multiple candidate regions to calculate a similarity or distance between the multiple candidate regions, and a region determiner configured to use the similarity or the distance to determine, as inspection information, at least one reference region corresponding to a region to be inspected.

Abstract: Provided is a pattern inspecting and measuring device that decreases the influence of noise and the like and increases the reliability of an inspection or measurement result during inspection or measurement using the position of an edge extracted from image data obtained by imaging a pattern as the object of inspection or measurement. For this purpose, in the pattern inspecting and measuring device in which inspection or measurement of an inspection or measurement object pattern is performed using the position of the edge extracted, with the use of an edge extraction parameter, from the image data obtained by imaging the inspection or measurement object pattern, the edge extraction parameter is generated using a reference pattern having a shape as an inspection or measurement reference and the image data.

Abstract: Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit for generating a simulated electron beam image using a parameter indicating the characteristics of the electron beam image on the basis of design data; and an inspection unit for comparing the electron beam image of the pattern, which is the image captured by the image capturing unit, and the simulated electron beam image generated by the simulated electron beam image generation unit, and inspecting the pattern on the substrate.

Abstract: Provided is a pattern inspecting and measuring device that decreases the influence of noise and the like and increases the reliability of an inspection or measurement result during inspection or measurement using the position of an edge extracted from image data obtained by imaging a pattern as the object of inspection or measurement. For this purpose, in the pattern inspecting and measuring device in which inspection or measurement of an inspection or measurement object pattern is performed using the position of the edge extracted, with the use of an edge extraction parameter, from the image data obtained by imaging the inspection or measurement object pattern, the edge extraction parameter is generated using a reference pattern having a shape as an inspection or measurement reference and the image data.

Abstract: Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit for generating a simulated electron beam image using a parameter indicating the characteristics of the electron beam image on the basis of design data; and an inspection unit for comparing the electron beam image of the pattern, which is the image captured by the image capturing unit, and the simulated electron beam image generated by the simulated electron beam image generation unit, and inspecting the pattern on the substrate.

Abstract: A defect inspection method comprising: picking up an image of a subject under inspection to thereby acquire an inspection image; extracting multiple templates corresponding to multiple regions, respectively from design data of the subject under inspection; finding a first misregistration amount between the inspection image and the design data using a first template as any one template selected from among the plural templates; finding a second misregistration amount between the inspection image and the design data using a second template other than the first template, the second template being selected from among the plural templates, and the first misregistration-amount; and converting the design data, misregistration thereof being corrected using the first misregistration-amount, and the second misregistration-amount, into a design data image, and comparing the design data image with the inspection image to thereby detect a defect of the subject under inspection.

Abstract: A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.

Abstract: Provided is a circuit-pattern inspection device which enables efficient inspection of a semiconductor wafer by selectively inspecting areas on the semiconductor wafer, such as boundaries between patterns thereon, where defects are likely to occur during the step of producing the semiconductor wafer while changing the beam scanning direction for each area. Two-dimensional beam-deflection control is employed for inspection operations in a continuous-stage-movement-type circuit-pattern inspection device in which only one-dimensional scanning has been employed conventionally. That is, by employing a combination of an electron-beam-deflection control in a first direction parallel to the stage-movement direction and an electron-beam-deflection control in a second direction intersecting the stage-movement direction, it is possible to obtain an image of any desired area for inspection that is set within a swath.

Abstract: A defect inspection method comprising: picking up an image of a subject under inspection to thereby acquire an inspection image; extracting multiple templates corresponding to multiple regions, respectively from design data of the subject under inspection; finding a first misregistration amount between the inspection image and the design data using a first template as any one template selected from among the plural templates; finding a second misregistration amount between the inspection image and the design data using a second template other than the first template, the second template being selected from among the plural templates, and the first misregistration-amount; and converting the design data, misregistration thereof being corrected using the first misregistration-amount, and the second misregistration-amount, into a design data image, and comparing the design data image with the inspection image to thereby detect a defect of the subject under inspection.

Abstract: Provided are a high speed circuit pattern inspecting method and inspecting device which have a short preparation time for inspection and are capable of determining a defect by detecting only an image of one die. A coordinate which is expected to obtain the same pattern as a corresponding coordinate and an alignment coordinate are selected by referring to design information. The detected image and the design information are aligned using the alignment coordinate to correct the deviated amount and a pattern of the corresponding coordinate is compared with a pattern of the coordinate which is expected to obtain the same pattern to compare the patterns by detecting only an image of one die.

Abstract: A semiconductor wafer 11 is irradiated for scanning with a charged particle beam 6 so as to detect secondary charged particles 9 obtained from the wafer 11 as a result of the irradiation of the beam 6. A detected image of an inspection area obtained based on scanning information and on a detection signal derived from the secondary charged particles 9 is compared with a detected image of a reference area to find a difference therebetween. The difference is compared with a threshold value to detect a defect candidate. Defect information including positional information about the defect candidate is generated in such a manner as to include a relative position of a predetermined feature point within each of repeat patterns formed on the semiconductor wafer 11 with regard to the origin of a coordinate area established in each of these repeat patterns, and a relative position of the defect candidate with regard to the feature point.

Abstract: Provided is an examination technique to detect defects with high sensitivity at an outer-most repetitive portion of a memory mat of a semiconductor device and even in a peripheral circuit having no repetitiveness. A circuit pattern inspection apparatus comprises an image detection unit for acquiring an image of a circuit pattern composed of multiple die having a repetitive pattern, a defect judgment unit which composes, in respect of an acquired detected image, reference images by switching addition objectives depending on regions of repetitive pattern and the other regions and compares a composed reference image with the detected image to detect a defect, and a display unit for displaying the image of the detected defect.

Abstract: A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.

Abstract: There is provided a substrate inspection device which uses a charged particle beam and is capable of more quickly extracting a defect candidate than ever before. The configuration of the substrate inspection device is such that a substrate having a circuit pattern is irradiated with a primary charged particle beam, the substrate is moved at a constant speed or at an increasing or a decreasing speed, a position resulting from the movement is monitored, the position of irradiation with the primary charged particle beam is controlled according to the coordinates of the substrate, an image in a partial region on the substrate is captured at a speed lower than the velocity of the movement, a defect candidate is detected based on the captured image, and the detected defect candidate is displayed in a map format.

Abstract: High-speed inspection is performed with appropriate sensitivity according to the pattern density and pattern characteristic of a device. The pixel dimension used in image acquisition is changed in accordance with the pattern density of a device. An image is acquired at high speed by changing the beam scan speed and the stage drive speed in accordance with the pixel dimension and eliminating an error by controlling the amount of beam delay. The acquired image is so resampled that the image dimensions of the acquired image and a reference image are equally sized, and the acquired image and the reference image are then aligned with each other. The aligned images are resampled in accordance with a preset pixel dimension to extract a difference between the images with the sensitivity according to the pixel dimension.