Patents by Inventor Takashi Hirose

Takashi Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11892100
    Abstract: A diaphragm valve including: a valve body having a flow path formed therein and a valve chamber recessed from an upper surface of the valve body; a diaphragm that is disposed in the valve chamber and elastically deformable to open and close the flow path and adjust an opening degree of the flow path; a stem for pressing the diaphragm to elastically deform the diaphragm; an actuator for driving the stem; a support mechanism that is fixed to the valve body and supports the stem and the actuator; wherein the stem includes a first stem member connected to the actuator via a displacement transmitting member, and a second stem member held by the support mechanism so as to be movable in the axial direction via a sleeve, the second stem member has an upper end portion which abuts against a lower end portion of the first stem member.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: February 6, 2024
    Assignee: FUJIKIN INCORPORATED
    Inventors: Kohei Shigyou, Takashi Hirose
  • Publication number: 20230344460
    Abstract: A high-frequency module is capable of two-uplink of a transmission signal in Band A and transmission of Band C, and includes a module substrate, a metal shield plate arranged on a principal surface, power amplifiers, a transmission filter of Band A, and a transmission filter of Band C. In a plan view, the metal shield plate is arranged between a first transmission component and a second transmission component. The first transmission component is one of the power amplifier, the transmission filter, a switch circuit, and a first inductor and a first capacitor arranged in a first transmission path, and the second transmission component is one of the power amplifier, the transmission filter, a switch circuit, and a second inductor and a second capacitor arranged in a second transmission path.
    Type: Application
    Filed: June 28, 2023
    Publication date: October 26, 2023
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Masanari MIURA, Kiyoshi AIKAWA, Hiroyuki NAGAMORI, Takanori UEJIMA, Yuji TAKEMATSU, Takahiro YAMASHITA, Ryo WAKABAYASHI, Yoshihiro YOSHIMURA, Takashi HIROSE
  • Publication number: 20230298959
    Abstract: A possible benefit of the present disclosure is to further improve a heat dissipation property of an electronic component. A high-frequency module includes a mounting substrate, a filter (for example, a transmission filter), a resin layer, a shielding layer, and a metal member. The resin layer covers at least a portion of an outer peripheral surface (for example, an outer peripheral surface) of the filter. The shielding layer covers at least a portion of the resin layer. The metal member is disposed at a first principal surface of the mounting substrate. The metal member is connected to a surface of the filter on the opposite side from the mounting substrate, the shielding layer, and the first principal surface of the mounting substrate.
    Type: Application
    Filed: May 26, 2023
    Publication date: September 21, 2023
    Inventors: Hiroyuki KANI, Yoshihiro YOSHIMURA, Takahiro YAMASHITA, Ryo WAKABAYASHI, Takashi HIROSE, Kiyoshi AIKAWA
  • Patent number: 11674603
    Abstract: A diaphragm valve includes: a valve body having flow paths of fluids formed therein and having a diaphragm-arrangement portion on one surface; a diaphragm arranged in the diaphragm-arrangement portion and can open and close the flow path and adjust the opening degree of by elastic deformation; and a driving unit having a stem for pressing the diaphragm to elastically deform and an actuator for driving the stem, wherein the stem is axially movably held via a resin sleeve by a bonnet fixed to the valve body side.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: June 13, 2023
    Assignee: FUJIKIN INCORPORATED
    Inventors: Kohei Shigyou, Takashi Hirose
  • Publication number: 20230003306
    Abstract: A diaphragm valve including: a valve body having a flow path formed therein and a valve chamber recessed from an upper surface of the valve body; a diaphragm that is disposed in the valve chamber and elastically deformable to open and close the flow path and adjust an opening degree of the flow path; a stem for pressing the diaphragm to elastically deform the diaphragm; an actuator for driving the stem; a support mechanism that is fixed to the valve body and supports the stem and the actuator; wherein the stem includes a first stem member connected to the actuator via a displacement transmitting member, and a second stem member held by the support mechanism so as to be movable in the axial direction via a sleeve, the second stem member has an upper end portion which abuts against a lower end portion of the first stem member.
    Type: Application
    Filed: December 7, 2020
    Publication date: January 5, 2023
    Applicant: FUJIKIN INCORPORATED
    Inventors: Kohei SHIGYOU, Takashi HIROSE
  • Patent number: 11545578
    Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: January 3, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasumasa Yamane, Takashi Hirose, Teruyuki Fujii, Hajime Kimura, Daigo Shimada
  • Publication number: 20220416059
    Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators.
    Type: Application
    Filed: September 30, 2020
    Publication date: December 29, 2022
    Inventors: Shunpei YAMAZAKI, Naoki OKUNO, Yuichi SATO, Takashi HIROSE, Yuko TAKABAYASHI
  • Publication number: 20220278235
    Abstract: A semiconductor device with little characteristic variation is provided. A transistor includes an oxide semiconductor; a first conductor and a second conductor over the oxide semiconductor; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator that is positioned over the first insulator and the second insulator and provided with a first opening overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned over the oxide semiconductor and between the first conductor and the second conductor; and a third conductor over the fourth insulator. A capacitor includes the second conductor; the third insulator provided with a second opening reaching the second conductor; a fifth insulator positioned inside the second opening; and a fourth conductor over the fifth insulator. A plug is positioned to penetrate the first insulator, the third insulator, the first conductor, and the oxide semiconductor.
    Type: Application
    Filed: August 17, 2020
    Publication date: September 1, 2022
    Inventors: Shunpei YAMAZAKI, Yoshinori ANDO, Ryota HODO, Takashi HIROSE
  • Publication number: 20220271168
    Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.
    Type: Application
    Filed: July 13, 2020
    Publication date: August 25, 2022
    Inventors: Shunpei YAMAZAKI, Shinya SASAGAWA, Ryota HODO, Takashi HIROSE, Yoshihiro KOMATSU, Katsuaki TOCHIBAYASHI, Kentaro SUGAYA
  • Publication number: 20220223721
    Abstract: A method for manufacturing a semiconductor device with high productivity is provided.
    Type: Application
    Filed: May 18, 2020
    Publication date: July 14, 2022
    Inventors: Shunpei YAMAZAKI, Takashi HIROSE, Atsushi SHIBAZAKI, Yasuhiro JINBO
  • Publication number: 20220173228
    Abstract: A semiconductor device with little variation in transistor characteristics is provided. A first insulator to a third insulator are formed. A fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film are sequentially formed over the third insulator. Shaping them into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer. The second conductive layer is removed. A fifth insulator and a sixth insulator are formed over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer. An opening reaching the second oxide is formed to form a third oxide, a fourth oxide, a first conductor, a second conductor, a seventh insulator, and an eighth insulator. A fifth oxide, a ninth insulator, and a third conductor are formed in the opening.
    Type: Application
    Filed: March 30, 2020
    Publication date: June 2, 2022
    Inventors: Shunpei YAMAZAKI, Tetsuya KAKEHATA, Yuichi SATO, Atsushi SHIBAZAKI, Kazuki TANEMURA, Takashi HIROSE
  • Publication number: 20220057002
    Abstract: A diaphragm valve includes: a valve body having flow paths of fluids formed therein and having a diaphragm-arrangement portion on one surface; a diaphragm arranged in the diaphragm-arrangement portion and can open and close the flow path and adjust the opening degree of by elastic deformation; and a driving unit having a stem for pressing the diaphragm to elastically deform and an actuator for driving the stem, wherein the stem is axially movably held via a resin sleeve by a bonnet fixed to the valve body side.
    Type: Application
    Filed: September 3, 2019
    Publication date: February 24, 2022
    Applicant: FUJIKIN INCORPORATED
    Inventors: Kohei SHIGYOU, Takashi HIROSE
  • Patent number: 11231121
    Abstract: A first lever portion includes a first point-of-effort portion, a first fulcrum portion, and a first point-of-load portion. A second lever portion has a second point-of-effort portion, a second fulcrum portion, and a second point-of-load portion. A first point-of-effort portion is located between a first fulcrum portion and a first point-of-load portion in a direction orthogonal to an axis of a stem. A second fulcrum portion is located between a second point-of-effort portion and a second point-of-load portion in the direction orthogonal to the axis. A distance between the second fulcrum portion and the second point-of-load portion is configured longer than a distance between the second fulcrum portion and the second point-of-effort portion. The second point-of-load portion of the second lever portion is displaced toward the stem and moves the stem toward the piezoelectric element by means of displacement of the intermediate member to the second lever portion side.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: January 25, 2022
    Assignee: FUJIKIN INCORPORATED
    Inventors: Takashi Hirose, Masahiko Nakazawa, Nobuo Nakamura, Tomoko Yuhara
  • Patent number: 11150353
    Abstract: A time synchronization method that is capable of selecting whether synchronization, by a timepiece unit that generates a time signal synchronized with a standard time and outputs it to an exterior, with the time is performed by time information obtained by receiving a radio wave including information relating to the time, or is performed by means of a holdover performed using a clock signal from an internal or external clock source. A schedule having a first time period in which the above-mentioned time information is used, and a second time period by means of the holdover is determined according to temporal reception characteristics of the radio wave at a reception location of the radio wave, and according to the schedule, supplying the timepiece unit with the time information or supplying the timepiece unit with the clock signal from the internal or external clock source.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: October 19, 2021
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Keisuke Nishi, Youichi Fukada, Akihiro Morita, Seiji Yoshida, Takashi Hirose
  • Publication number: 20210199210
    Abstract: A first lever portion includes a first point-of-effort portion, a first fulcrum portion, and a first point-of-load portion. A second lever portion has a second point-of-effort portion, a second fulcrum portion, and a second point-of-load portion. A first point-of-effort portion is located between a first fulcrum portion and a first point-of-load portion in a direction orthogonal to an axis of a stem. A second fulcrum portion is located between a second point-of-effort portion and a second point-of-load portion in the direction orthogonal to the axis. A distance between the second fulcrum portion and the second point-of-load portion is configured longer than a distance between the second fulcrum portion and the second point-of-effort portion. The second point-of-load portion of the second lever portion is displaced toward the stem and moves the stem toward the piezoelectric element by means of displacement of the intermediate member to the second lever portion side.
    Type: Application
    Filed: January 29, 2021
    Publication date: July 1, 2021
    Inventors: Takashi HIROSE, Masahiko NAKAZAWA, Nobuo NAKAMURA, Tomoko YUHARA
  • Publication number: 20210167211
    Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.
    Type: Application
    Filed: April 18, 2019
    Publication date: June 3, 2021
    Inventors: Shunpei YAMAZAKI, Yasumasa YAMANE, Takashi HIROSE, Teruyuki FUJI, Hajime KIMURA, Daigo SHIMADA
  • Patent number: 10703032
    Abstract: A method for manufacturing a hollow part with a branch, including a resin filling step of filling a mold, the mold having a main cavity in which a hollowing piece is placed, and a branch cavity to communicate with the main cavity, in which a slide shaft is inserted to advance and withdraw, and that forms a branch pipe portion in an annular space between the branch cavity and the slide shaft, a step of forming a hollow main pipe portion by moving the hollowing piece to force excess resin out of the main cavity, and a shaft removing step of withdrawing the slide shaft to form a branch hollow portion, the hollow part with a branch being made of a resin and having the branch pipe portion integrally connected to the main pipe portion such that the main hollow portion and the branch hollow portion communicate with each other.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: July 7, 2020
    Assignees: TOYODA IRON WORKS CO., LTD., RP TOPLA LIMITED
    Inventors: Kunihiro Iwata, Hideaki Sakai, Yasuhiro Sone, Takashi Hirose, Kazuhiro Yokobori
  • Patent number: 10573801
    Abstract: A piezoelectric linear actuator comprising a laminated piezoelectric actuator having a cylindrical shape; a lower support member supporting the laminated piezoelectric actuator and extending laterally to the left and right of the laminated piezoelectric actuator; a pair of displacement transfer members extending along the left and right sides of the laminated piezoelectric actuator, respectively, to slidably intersect the lower support member and transferring displacement due to the piezoelectric effect of the laminated piezoelectric actuator; and an output part locked to the pair of displacement transfer members below the lower support member and coupling lower end portions of the displacement transfer members, wherein the pair of displacement transfer members are formed to have a width dimension that is the same or substantially the same as the width dimension of the laminated piezoelectric actuator.
    Type: Grant
    Filed: August 9, 2016
    Date of Patent: February 25, 2020
    Assignee: FUJIKIN INCORPORATED
    Inventors: Kohei Shigyou, Takashi Hirose, Kouji Nishino, Ryousuke Dohi, Naofumi Yasumoto
  • Patent number: 10520605
    Abstract: A satellite signal reception characteristic estimation apparatus includes a satellite orbital information collection unit that collects and outputs orbital information for a satellite; a peripheral environment spatial information collection unit that collects spatial information for a peripheral environment of an installation position of a satellite antenna; a positional information collection unit that collects and outputs positional information for the installation position of the satellite antenna; and a simulation server unit that estimates reception characteristics of satellite signals at the installation position of the satellite antenna by performing a simulation based on the orbital information, the spatial information, and the positional information outputted from the satellite orbital information collection unit, the peripheral environment spatial information collection unit, and the positional information collection unit.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: December 31, 2019
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Keisuke Nishi, Youichi Fukada, Akihiro Morita, Seiji Yoshida, Takashi Hirose
  • Patent number: D879248
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: March 24, 2020
    Assignee: FUJIKIN INCORPORATED
    Inventors: Kohei Shigyou, Takashi Hirose, Kouji Nishino, Ryousuke Dohi, Naofumi Yasumoto