Abstract: A light detection device includes a Fabry-Perot interference filter provided with a light transmitting region on a predetermined line, a light detector disposed on one side with respect to the Fabry-Perot interference filter on the line, a package having an opening positioned on the other side with respect to the Fabry-Perot interference filter on the line, a light transmitting member provided in the package such that the opening is blocked, and a temperature control element having an endothermic region thermally connected to the Fabry-Perot interference filter and the light detector. The endothermic region is positioned on one side with respect to the light detector on the line.

Abstract: A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

Abstract: An electrical inspection method includes: a step of preparing a wafer in which a plurality of Fabry-Perot interference filter portions is formed, each of the plurality of Fabry-Perot interference filter portions in which a distance between a first mirror portion and a second mirror portion facing each other varies by an electrostatic force; and a step of inspecting electrical characteristics of each of the plurality of Fabry-Perot interference filter portions.

Abstract: The present disclosure provides an oily moisturizer composed of an esterified product of a component A and a component B, or an esterified product of the component A, the component B and a component C, wherein Component A comprises a polyhydric alcohol that is dipentaerythritol, erythritol or sorbitan, Component B comprises one fatty acid, or two or more fatty acids, selected from among linear saturated fatty acids of 6 to 10 carbon atoms, and Component C comprises one fatty acid, or two or more fatty acids, selected from among fatty acids of 6 to 28 carbon atoms (but excluding fatty acids of the component B).

Abstract: The objective of the present invention is provide a defect inspection apparatus that increases defect position precision and can easily align a coordinate origin offset between a reviewing apparatus and the defect inspection apparatus, even when design data cannot be obtained or it is difficult to sufficiently use the design data. The defect inspection apparatus according to the present invention acquires a wafer swath image necessary for inspection, and uses the swath image to detect defects and calculate a positional deviation amount. During the calculation of the positional deviation amount, a template pattern is acquired from one arbitrary swath image via an image processing unit, and the template pattern and a plurality of swath images of the entire wafer are compared, whereby the positional deviation amount for a position corresponding to the template pattern on the wafer is calculated.

Abstract: In some implementations, a device may monitor a set of data sources to generate a set of language models corresponding to the set of data sources. The device may determine a plurality of sets of keyword groups. The device may generate a plurality of sets of skill catalogs. The device may receive a source document for processing. The device may process the source document to extract a key phrase set and to determine a first similarity distance. The device may select a corresponding skill catalog and an associated language model based on a relevancy value. The device may determine second similarity distances between the source document and one or more target documents using the corresponding skill catalog and the associated language model. The device may output information associated with one or more target documents based at least in part on the second similarity distances.

Abstract: A lead-free piezoelectric ceramic composition which includes a primary phase formed of an alkali niobate-based perovskite oxide represented by a compositional formula (A1aM1b)c(Nbd1, Mnd2, M2d3)O3+e (in which element A1 represents at least one species among the alkali metals; element M1 represents at least one species among Ba, Ca, and Sr; element M2 represents at least one species of Ti and Zr; the following conditions: 0<a<1, 0<b<1, a+b=1, 0.80<c<1.10, 0<d1<1, 0<d2<1, 0<d3<1, and d1+d2+d3=1, are satisfied; and e represents a value showing the degree of deficiency or excess of oxygen) and which satisfies the condition: b/(d2+d3)>1.0.

Abstract: A compound of the formula (I): wherein each symbol is as defined in the DESCRIPTION. or a pharmaceutically acceptable salt thereof has a superior Notch signal transduction inhibitory action, and is useful for preventing or treating various diseases involving Notch signal transduction.

Abstract: A foreshortening calculating unit of an image processing device calculates the degree of foreshortening in an imaging range at the time of synthetic aperture radar imaging using a flying object on the basis of an orbit at the time of the synthetic aperture radar imaging and elevation data of the earth's surface. A polygon calculating unit calculates a polygon representing an actual outer boundary of the imaging range by calculating an outer boundary of an actual imaging range of the imaging range using the degree of foreshortening. An area determining unit determines, by using the polygon, which of two or more areas determined in an area imaged by the synthetic aperture radar the imaging range belongs to. An added value adding unit performs a process which is performed according to the determined area on an image of the imaging range on the basis of a determination result of the area to which the imaging range belongs from the area determining unit.

Abstract: The purpose of the present invention is to provide a defect inspection device with which it is possible to determine a defect candidate position more accurately than before, even when design data cannot be obtained or are difficult to be utilized sufficiently. The present invention solves the problem by: setting an appropriate reference die or reference chip over a wafer to be inspected; setting, with respect to each of swath channel die images obtained by dividing a reference die swath image into a plurality of portions and detecting the portions, one or more reference patterns; correcting a position error of a swath image obtained from another die to be inspected, using the reference pattern for each swath channel image; and performing defect detection using the corrected swath channel image.

Abstract: A diaphragm valve, which is miniaturized while ensuring a required flow rate and has improved assemble workability and maintainability, includes a body defining a flow path; a diaphragm provided on a bottom surface of an accommodation recess; a fixing ring screwed with a screw portion formed on an inner peripheral surface of the accommodation recess to fix the diaphragm to the body; a stacked piezoelectric actuator; a support plate supporting the stacked piezoelectric actuator; a cylindrical actuator cover holding a diaphragm presser and configured to transmit the piezoelectric displacement of the stacked piezoelectric actuator while accommodating the stacked piezoelectric actuator inside; and a fixing member screwed with the common screw portion and cooperating with the fixing ring to fix the position of the support plate in the accommodation recess.

Abstract: A diaphragm valve including: a valve body having a flow path formed therein and a valve chamber recessed from an upper surface of the valve body; a diaphragm that is disposed in the valve chamber and elastically deformable to open and close the flow path and adjust an opening degree of the flow path; a stem for pressing the diaphragm to elastically deform the diaphragm; an actuator for driving the stem; a support mechanism that is fixed to the valve body and supports the stem and the actuator; wherein the stem includes a first stem member connected to the actuator via a displacement transmitting member, and a second stem member held by the support mechanism so as to be movable in the axial direction via a sleeve, the second stem member has an upper end portion which abuts against a lower end portion of the first stem member.

Abstract: A high-frequency module is capable of two-uplink of a transmission signal in Band A and transmission of Band C, and includes a module substrate, a metal shield plate arranged on a principal surface, power amplifiers, a transmission filter of Band A, and a transmission filter of Band C. In a plan view, the metal shield plate is arranged between a first transmission component and a second transmission component. The first transmission component is one of the power amplifier, the transmission filter, a switch circuit, and a first inductor and a first capacitor arranged in a first transmission path, and the second transmission component is one of the power amplifier, the transmission filter, a switch circuit, and a second inductor and a second capacitor arranged in a second transmission path.

Abstract: A possible benefit of the present disclosure is to further improve a heat dissipation property of an electronic component. A high-frequency module includes a mounting substrate, a filter (for example, a transmission filter), a resin layer, a shielding layer, and a metal member. The resin layer covers at least a portion of an outer peripheral surface (for example, an outer peripheral surface) of the filter. The shielding layer covers at least a portion of the resin layer. The metal member is disposed at a first principal surface of the mounting substrate. The metal member is connected to a surface of the filter on the opposite side from the mounting substrate, the shielding layer, and the first principal surface of the mounting substrate.

Abstract: A diaphragm valve includes: a valve body having flow paths of fluids formed therein and having a diaphragm-arrangement portion on one surface; a diaphragm arranged in the diaphragm-arrangement portion and can open and close the flow path and adjust the opening degree of by elastic deformation; and a driving unit having a stem for pressing the diaphragm to elastically deform and an actuator for driving the stem, wherein the stem is axially movably held via a resin sleeve by a bonnet fixed to the valve body side.

Abstract: A diaphragm valve including: a valve body having a flow path formed therein and a valve chamber recessed from an upper surface of the valve body; a diaphragm that is disposed in the valve chamber and elastically deformable to open and close the flow path and adjust an opening degree of the flow path; a stem for pressing the diaphragm to elastically deform the diaphragm; an actuator for driving the stem; a support mechanism that is fixed to the valve body and supports the stem and the actuator; wherein the stem includes a first stem member connected to the actuator via a displacement transmitting member, and a second stem member held by the support mechanism so as to be movable in the axial direction via a sleeve, the second stem member has an upper end portion which abuts against a lower end portion of the first stem member.

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators.

Abstract: A semiconductor device with little characteristic variation is provided. A transistor includes an oxide semiconductor; a first conductor and a second conductor over the oxide semiconductor; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator that is positioned over the first insulator and the second insulator and provided with a first opening overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned over the oxide semiconductor and between the first conductor and the second conductor; and a third conductor over the fourth insulator. A capacitor includes the second conductor; the third insulator provided with a second opening reaching the second conductor; a fifth insulator positioned inside the second opening; and a fourth conductor over the fifth insulator. A plug is positioned to penetrate the first insulator, the third insulator, the first conductor, and the oxide semiconductor.

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.