Abstract: A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

Abstract: A diaphragm valve, which is miniaturized while ensuring a required flow rate and has improved assemble workability and maintainability, includes a body defining a flow path; a diaphragm provided on a bottom surface of an accommodation recess; a fixing ring screwed with a screw portion formed on an inner peripheral surface of the accommodation recess to fix the diaphragm to the body; a stacked piezoelectric actuator; a support plate supporting the stacked piezoelectric actuator; a cylindrical actuator cover holding a diaphragm presser and configured to transmit the piezoelectric displacement of the stacked piezoelectric actuator while accommodating the stacked piezoelectric actuator inside; and a fixing member screwed with the common screw portion and cooperating with the fixing ring to fix the position of the support plate in the accommodation recess.

Abstract: A diaphragm valve including: a valve body having a flow path formed therein and a valve chamber recessed from an upper surface of the valve body; a diaphragm that is disposed in the valve chamber and elastically deformable to open and close the flow path and adjust an opening degree of the flow path; a stem for pressing the diaphragm to elastically deform the diaphragm; an actuator for driving the stem; a support mechanism that is fixed to the valve body and supports the stem and the actuator; wherein the stem includes a first stem member connected to the actuator via a displacement transmitting member, and a second stem member held by the support mechanism so as to be movable in the axial direction via a sleeve, the second stem member has an upper end portion which abuts against a lower end portion of the first stem member.

Abstract: A high-frequency module is capable of two-uplink of a transmission signal in Band A and transmission of Band C, and includes a module substrate, a metal shield plate arranged on a principal surface, power amplifiers, a transmission filter of Band A, and a transmission filter of Band C. In a plan view, the metal shield plate is arranged between a first transmission component and a second transmission component. The first transmission component is one of the power amplifier, the transmission filter, a switch circuit, and a first inductor and a first capacitor arranged in a first transmission path, and the second transmission component is one of the power amplifier, the transmission filter, a switch circuit, and a second inductor and a second capacitor arranged in a second transmission path.

Abstract: A possible benefit of the present disclosure is to further improve a heat dissipation property of an electronic component. A high-frequency module includes a mounting substrate, a filter (for example, a transmission filter), a resin layer, a shielding layer, and a metal member. The resin layer covers at least a portion of an outer peripheral surface (for example, an outer peripheral surface) of the filter. The shielding layer covers at least a portion of the resin layer. The metal member is disposed at a first principal surface of the mounting substrate. The metal member is connected to a surface of the filter on the opposite side from the mounting substrate, the shielding layer, and the first principal surface of the mounting substrate.

Abstract: A diaphragm valve includes: a valve body having flow paths of fluids formed therein and having a diaphragm-arrangement portion on one surface; a diaphragm arranged in the diaphragm-arrangement portion and can open and close the flow path and adjust the opening degree of by elastic deformation; and a driving unit having a stem for pressing the diaphragm to elastically deform and an actuator for driving the stem, wherein the stem is axially movably held via a resin sleeve by a bonnet fixed to the valve body side.

Abstract: A diaphragm valve including: a valve body having a flow path formed therein and a valve chamber recessed from an upper surface of the valve body; a diaphragm that is disposed in the valve chamber and elastically deformable to open and close the flow path and adjust an opening degree of the flow path; a stem for pressing the diaphragm to elastically deform the diaphragm; an actuator for driving the stem; a support mechanism that is fixed to the valve body and supports the stem and the actuator; wherein the stem includes a first stem member connected to the actuator via a displacement transmitting member, and a second stem member held by the support mechanism so as to be movable in the axial direction via a sleeve, the second stem member has an upper end portion which abuts against a lower end portion of the first stem member.

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators.

Abstract: A semiconductor device with little characteristic variation is provided. A transistor includes an oxide semiconductor; a first conductor and a second conductor over the oxide semiconductor; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator that is positioned over the first insulator and the second insulator and provided with a first opening overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned over the oxide semiconductor and between the first conductor and the second conductor; and a third conductor over the fourth insulator. A capacitor includes the second conductor; the third insulator provided with a second opening reaching the second conductor; a fifth insulator positioned inside the second opening; and a fourth conductor over the fifth insulator. A plug is positioned to penetrate the first insulator, the third insulator, the first conductor, and the oxide semiconductor.

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.

Abstract: A method for manufacturing a semiconductor device with high productivity is provided.

Abstract: A semiconductor device with little variation in transistor characteristics is provided. A first insulator to a third insulator are formed. A fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film are sequentially formed over the third insulator. Shaping them into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer. The second conductive layer is removed. A fifth insulator and a sixth insulator are formed over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer. An opening reaching the second oxide is formed to form a third oxide, a fourth oxide, a first conductor, a second conductor, a seventh insulator, and an eighth insulator. A fifth oxide, a ninth insulator, and a third conductor are formed in the opening.

Abstract: A diaphragm valve includes: a valve body having flow paths of fluids formed therein and having a diaphragm-arrangement portion on one surface; a diaphragm arranged in the diaphragm-arrangement portion and can open and close the flow path and adjust the opening degree of by elastic deformation; and a driving unit having a stem for pressing the diaphragm to elastically deform and an actuator for driving the stem, wherein the stem is axially movably held via a resin sleeve by a bonnet fixed to the valve body side.

Abstract: A first lever portion includes a first point-of-effort portion, a first fulcrum portion, and a first point-of-load portion. A second lever portion has a second point-of-effort portion, a second fulcrum portion, and a second point-of-load portion. A first point-of-effort portion is located between a first fulcrum portion and a first point-of-load portion in a direction orthogonal to an axis of a stem. A second fulcrum portion is located between a second point-of-effort portion and a second point-of-load portion in the direction orthogonal to the axis. A distance between the second fulcrum portion and the second point-of-load portion is configured longer than a distance between the second fulcrum portion and the second point-of-effort portion. The second point-of-load portion of the second lever portion is displaced toward the stem and moves the stem toward the piezoelectric element by means of displacement of the intermediate member to the second lever portion side.

Abstract: A time synchronization method that is capable of selecting whether synchronization, by a timepiece unit that generates a time signal synchronized with a standard time and outputs it to an exterior, with the time is performed by time information obtained by receiving a radio wave including information relating to the time, or is performed by means of a holdover performed using a clock signal from an internal or external clock source. A schedule having a first time period in which the above-mentioned time information is used, and a second time period by means of the holdover is determined according to temporal reception characteristics of the radio wave at a reception location of the radio wave, and according to the schedule, supplying the timepiece unit with the time information or supplying the timepiece unit with the clock signal from the internal or external clock source.

Abstract: A first lever portion includes a first point-of-effort portion, a first fulcrum portion, and a first point-of-load portion. A second lever portion has a second point-of-effort portion, a second fulcrum portion, and a second point-of-load portion. A first point-of-effort portion is located between a first fulcrum portion and a first point-of-load portion in a direction orthogonal to an axis of a stem. A second fulcrum portion is located between a second point-of-effort portion and a second point-of-load portion in the direction orthogonal to the axis. A distance between the second fulcrum portion and the second point-of-load portion is configured longer than a distance between the second fulcrum portion and the second point-of-effort portion. The second point-of-load portion of the second lever portion is displaced toward the stem and moves the stem toward the piezoelectric element by means of displacement of the intermediate member to the second lever portion side.

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

Abstract: A method for manufacturing a hollow part with a branch, including a resin filling step of filling a mold, the mold having a main cavity in which a hollowing piece is placed, and a branch cavity to communicate with the main cavity, in which a slide shaft is inserted to advance and withdraw, and that forms a branch pipe portion in an annular space between the branch cavity and the slide shaft, a step of forming a hollow main pipe portion by moving the hollowing piece to force excess resin out of the main cavity, and a shaft removing step of withdrawing the slide shaft to form a branch hollow portion, the hollow part with a branch being made of a resin and having the branch pipe portion integrally connected to the main pipe portion such that the main hollow portion and the branch hollow portion communicate with each other.