Abstract: A diaphragm valve including: a valve body having a flow path formed therein and a valve chamber recessed from an upper surface of the valve body; a diaphragm that is disposed in the valve chamber and elastically deformable to open and close the flow path and adjust an opening degree of the flow path; a stem for pressing the diaphragm to elastically deform the diaphragm; an actuator for driving the stem; a support mechanism that is fixed to the valve body and supports the stem and the actuator; wherein the stem includes a first stem member connected to the actuator via a displacement transmitting member, and a second stem member held by the support mechanism so as to be movable in the axial direction via a sleeve, the second stem member has an upper end portion which abuts against a lower end portion of the first stem member.

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators.

Abstract: A semiconductor device with little characteristic variation is provided. A transistor includes an oxide semiconductor; a first conductor and a second conductor over the oxide semiconductor; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator that is positioned over the first insulator and the second insulator and provided with a first opening overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned over the oxide semiconductor and between the first conductor and the second conductor; and a third conductor over the fourth insulator. A capacitor includes the second conductor; the third insulator provided with a second opening reaching the second conductor; a fifth insulator positioned inside the second opening; and a fourth conductor over the fifth insulator. A plug is positioned to penetrate the first insulator, the third insulator, the first conductor, and the oxide semiconductor.

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.

Abstract: A method for manufacturing a semiconductor device with high productivity is provided.

Abstract: A semiconductor device with little variation in transistor characteristics is provided. A first insulator to a third insulator are formed. A fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film are sequentially formed over the third insulator. Shaping them into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer. The second conductive layer is removed. A fifth insulator and a sixth insulator are formed over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer. An opening reaching the second oxide is formed to form a third oxide, a fourth oxide, a first conductor, a second conductor, a seventh insulator, and an eighth insulator. A fifth oxide, a ninth insulator, and a third conductor are formed in the opening.

Abstract: A diaphragm valve includes: a valve body having flow paths of fluids formed therein and having a diaphragm-arrangement portion on one surface; a diaphragm arranged in the diaphragm-arrangement portion and can open and close the flow path and adjust the opening degree of by elastic deformation; and a driving unit having a stem for pressing the diaphragm to elastically deform and an actuator for driving the stem, wherein the stem is axially movably held via a resin sleeve by a bonnet fixed to the valve body side.

Abstract: A first lever portion includes a first point-of-effort portion, a first fulcrum portion, and a first point-of-load portion. A second lever portion has a second point-of-effort portion, a second fulcrum portion, and a second point-of-load portion. A first point-of-effort portion is located between a first fulcrum portion and a first point-of-load portion in a direction orthogonal to an axis of a stem. A second fulcrum portion is located between a second point-of-effort portion and a second point-of-load portion in the direction orthogonal to the axis. A distance between the second fulcrum portion and the second point-of-load portion is configured longer than a distance between the second fulcrum portion and the second point-of-effort portion. The second point-of-load portion of the second lever portion is displaced toward the stem and moves the stem toward the piezoelectric element by means of displacement of the intermediate member to the second lever portion side.

Abstract: A time synchronization method that is capable of selecting whether synchronization, by a timepiece unit that generates a time signal synchronized with a standard time and outputs it to an exterior, with the time is performed by time information obtained by receiving a radio wave including information relating to the time, or is performed by means of a holdover performed using a clock signal from an internal or external clock source. A schedule having a first time period in which the above-mentioned time information is used, and a second time period by means of the holdover is determined according to temporal reception characteristics of the radio wave at a reception location of the radio wave, and according to the schedule, supplying the timepiece unit with the time information or supplying the timepiece unit with the clock signal from the internal or external clock source.

Abstract: A first lever portion includes a first point-of-effort portion, a first fulcrum portion, and a first point-of-load portion. A second lever portion has a second point-of-effort portion, a second fulcrum portion, and a second point-of-load portion. A first point-of-effort portion is located between a first fulcrum portion and a first point-of-load portion in a direction orthogonal to an axis of a stem. A second fulcrum portion is located between a second point-of-effort portion and a second point-of-load portion in the direction orthogonal to the axis. A distance between the second fulcrum portion and the second point-of-load portion is configured longer than a distance between the second fulcrum portion and the second point-of-effort portion. The second point-of-load portion of the second lever portion is displaced toward the stem and moves the stem toward the piezoelectric element by means of displacement of the intermediate member to the second lever portion side.

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

Abstract: A method for manufacturing a hollow part with a branch, including a resin filling step of filling a mold, the mold having a main cavity in which a hollowing piece is placed, and a branch cavity to communicate with the main cavity, in which a slide shaft is inserted to advance and withdraw, and that forms a branch pipe portion in an annular space between the branch cavity and the slide shaft, a step of forming a hollow main pipe portion by moving the hollowing piece to force excess resin out of the main cavity, and a shaft removing step of withdrawing the slide shaft to form a branch hollow portion, the hollow part with a branch being made of a resin and having the branch pipe portion integrally connected to the main pipe portion such that the main hollow portion and the branch hollow portion communicate with each other.

Abstract: A piezoelectric linear actuator comprising a laminated piezoelectric actuator having a cylindrical shape; a lower support member supporting the laminated piezoelectric actuator and extending laterally to the left and right of the laminated piezoelectric actuator; a pair of displacement transfer members extending along the left and right sides of the laminated piezoelectric actuator, respectively, to slidably intersect the lower support member and transferring displacement due to the piezoelectric effect of the laminated piezoelectric actuator; and an output part locked to the pair of displacement transfer members below the lower support member and coupling lower end portions of the displacement transfer members, wherein the pair of displacement transfer members are formed to have a width dimension that is the same or substantially the same as the width dimension of the laminated piezoelectric actuator.

Abstract: A satellite signal reception characteristic estimation apparatus includes a satellite orbital information collection unit that collects and outputs orbital information for a satellite; a peripheral environment spatial information collection unit that collects spatial information for a peripheral environment of an installation position of a satellite antenna; a positional information collection unit that collects and outputs positional information for the installation position of the satellite antenna; and a simulation server unit that estimates reception characteristics of satellite signals at the installation position of the satellite antenna by performing a simulation based on the orbital information, the spatial information, and the positional information outputted from the satellite orbital information collection unit, the peripheral environment spatial information collection unit, and the positional information collection unit.

Abstract: Passage members each have a required width, a required height, and a required length, and are provided at middle portions in the width direction with fluid passages, respectively. As coupling means, two bolts are used. The middle portion in the width direction of each of the passage members has opposite end portions that are each provided with a female screw and a bolt insertion hole to be faced by the female screw, respectively. The upper bolt is inserted into one of the passage members and is screwed into the female screw of the other passage member. The lower bolt is inserted into the other passage member and is screwed into the female screw of the one of the passage members. The passage members are coupled with use of the two upper and lower bolts whereby a seal member is securely fixed.

Abstract: A navigation satellite signal reception apparatus includes a satellite antenna; a satellite orbital information collection unit that collects orbital information of a navigation satellite; a peripheral environment spatial information collection unit that collects spatial information for a peripheral environment of an installation position of the satellite antenna; a positional information collection unit that collects positional information for the installation position of the satellite antenna; and a signal correction unit that performs a determination process to determine whether a navigation satellite associated with the received satellite signal is in a directly viewable state or in a non-directly-viewable state from the installation position of the satellite antenna, and that performs a correction process on a satellite signal from a navigation satellite in an NLOS state, on the assumption that the satellite signal is a reflected wave.

Abstract: A pressure-type flow rate controller includes a body provided with a fluid passage which communicates a fluid inlet and a fluid outlet, a control valve for pressure control fixed to the body to open and close the fluid passage, an orifice arranged in the course of the fluid passage on the downstream side of the control valve, and a pressure sensor fixed to the body to detect the internal pressure of the fluid passage between the control valve and the orifice, wherein the fluid passage comprises a first passage portion communicating the control valve and a pressure detection chamber provided on a pressure detection surface of the pressure sensor, and a second passage portion spaced away from the first passage portion and communicating the pressure detection chamber and the orifice.

Abstract: A temperature sensor includes a thermistor element, signal lines 3 and a cover. The thermistor element includes a resistor whose resistance changes with the change of temperature, and electrode wires 22 drawn from the resistor. Each electrode wire 22 and the corresponding signal line 3 are joined to each other, by melting, base materials thereof. The electrode wires 22 contain metallic particles K containing platinum, oxide particles S dispersed in the metallic particles K, and pores H.