Patents by Inventor Takashi Hirose

Takashi Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160349763
    Abstract: A pressure-type flow rate controller includes a body provided with a fluid passage which communicates a fluid inlet and a fluid outlet, a control valve for pressure control fixed to the body to open and close the fluid passage, an orifice arranged in the course of the fluid passage on the downstream side of the control valve, and a pressure sensor fixed to the body to detect the internal pressure of the fluid passage between the control valve and the orifice, wherein the fluid passage comprises a first passage portion communicating the control valve and a pressure detection chamber provided on a pressure detection surface of the pressure sensor, and a second passage portion spaced away from the first passage portion and communicating the pressure detection chamber and the orifice.
    Type: Application
    Filed: November 25, 2014
    Publication date: December 1, 2016
    Inventors: Takashi Hirose, Toshihide Yoshida, Atsushi Matsumoto, Kaoru Hirata, Nobukazu Ikeda, Kouji Nishino, Ryousuke Dohi, Katsuyuki Sugita
  • Patent number: 9508880
    Abstract: It is an object to provide a method for processing a silicon substrate that can reduce surface reflectance as much as possible. The method includes a first step of forming a thin film including a metal having higher electronegativity than silicon and having a plurality of openings on a silicon substrate, a second step of soaking the silicon substrate subjected to the first step in a hydrofluoric acid solution containing oxidizer, and a third step of soaking the silicon substrate subjected to the second step in an ammonia aqueous solution containing oxidizer. By performing the steps in the above order, a minute uneven structure is formed on a surface of the silicon substrate to reduce the reflectance.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: November 29, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takashi Hirose, Ryosuke Motoyoshi
  • Patent number: 9471065
    Abstract: A plurality of stacked and fixed gas supplying units U, each gas supplying unit U having at least four gas supply lines S is formed by opposingly combining and fixing two flow controllers 3, each flow controller 3 provided with a plurality of flow control units, to a gas inlet-side block 12 and a gas outlet-side block 13 that are disposed in parallel across an interval in plan view and providing each flow controller 3 with an inlet opening and closing valve 1 and an outlet opening and closing valve 5.
    Type: Grant
    Filed: October 18, 2013
    Date of Patent: October 18, 2016
    Assignee: FUJIKIN INCORPORATED
    Inventors: Mutsunori Koyomogi, Takashi Hirose, Michio Yamaji, Takahiro Matsuda
  • Publication number: 20160274595
    Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m(P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.
    Type: Application
    Filed: June 2, 2016
    Publication date: September 22, 2016
    Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
  • Publication number: 20160197490
    Abstract: An information processing apparatus comprises a power transmission section which transmits electric power to a peripheral device which is associated with the information processing apparatus in a non-contact manner including no mechanical connection, a power receiving section which receives electric power transmitted from the peripheral device in a non-contact manner including no mechanical connection, a power transmission module which transmits electric power to the peripheral device via the power transmission section if electric power is being supplied through a power cable, an output module which outputs power transmission request information indicating a request for the transmission of electric power to the peripheral device if the electric power supplied through the power cable is cut off, and a charging module which charges, via the power receiving section, a battery with the electric power transmitted from the peripheral device to which the output module outputs the power transmission request informati
    Type: Application
    Filed: December 8, 2015
    Publication date: July 7, 2016
    Inventor: Takashi Hirose
  • Patent number: 9383758
    Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m(P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: July 5, 2016
    Assignees: Fujikin Incorporated, National University Corporation Tohoku University, Tokyo Electron Ltd.
    Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
  • Publication number: 20160142489
    Abstract: A connection control apparatus includes a linkup detector that detects a linkup with the host apparatus, a port information generator that generates port group information containing port information to identify a port of the storage apparatus whose linkup is detected by the linkup detector, a host information generator that generates host group information containing host information to identify the host apparatus whose linkup is detected by the linkup detector, a logical volume information generator that generates logical volume group information containing logical volume information to identify the logical volumes of all unallocated logical volumes, and an access processing information generator that generates access processing information associating the port group information, the host group information, and the logical volume group information.
    Type: Application
    Filed: November 16, 2015
    Publication date: May 19, 2016
    Applicant: FUJITSU LIMITED
    Inventors: Hironobu Sazuka, Hidekazu KAWANO, Katsuhiko Hada, Shigeyuki Kashima, Toru Nagasawa, Takashi Hirose, Hiroyuki Watanabe
  • Patent number: 9337361
    Abstract: In a method for manufacturing a photoelectric conversion device, a method for forming an embedded electrode is provided, which is suitable for a groove with a high aspect ratio. A first groove and a second groove intersecting with the first groove are formed in a crystalline silicon substrate, an i-type first silicon semiconductor layer, a second silicon semiconductor layer with one conductivity type, and a light-transmitting conductive film are sequentially formed on the surface of the crystalline silicon substrate and on the grooves, a conductive resin is injected into the first groove, and the second groove is filled with the conductive resin by a capillary action to form a grid electrode.
    Type: Grant
    Filed: November 18, 2011
    Date of Patent: May 10, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takashi Hirose, Naoto Kusumoto
  • Publication number: 20160109886
    Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m(P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.
    Type: Application
    Filed: December 21, 2015
    Publication date: April 21, 2016
    Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
  • Publication number: 20160070271
    Abstract: A multi-hole orifice plate for flow control includes an orifice plate for controlling the flow rate of a fluid, wherein the opening area of one orifice necessary for the passage of a predetermined flow rate of fluid is divided to provide a plurality of orifices having a total opening area equal to said opening area.
    Type: Application
    Filed: April 9, 2014
    Publication date: March 10, 2016
    Applicant: FUJIKIN INCORPORATED
    Inventors: Kaoru HIRATA, Atsushi HIDAKA, Masaaki NAGASE, Ryousuke DOHI, Nobukazu IKEDA, Kouji NISHINO, Katsuyuki SUGITA, Takashi HIROSE
  • Publication number: 20160047483
    Abstract: A flow control valve for a flow controller includes a valve main body provided with an open-top valve chamber hole, a metal diaphragm valve element, a lower support cylinder having notches facing each other, an upper support cylinder attached to the lower support cylinder, a support frame horizontally disposed through the notches of the lower support cylinder, a disc spring placed between the support frame and a bottom of the lower support cylinder, a lower cradle placed on the support frame, a piezoelectric element inserted into the support cylinder above the lower cradle, a guide fixed to the valve main body together with the support frame with the support cylinder being inserted through the guide cylinder in a vertically movable manner. The support cylinder is pressed upward by the extension of the piezoelectric element, whereby the metal diaphragm valve element is separated from the valve seat by the elastic force.
    Type: Application
    Filed: March 17, 2014
    Publication date: February 18, 2016
    Applicant: Fujikin Incorporated
    Inventors: Takashi HIROSE, Michio YAMAJI, Toshihide YOSHIDA, Kohei SHIGYOU
  • Patent number: 9163748
    Abstract: This invention provides a fluid control device capable of making compact a fluid control device in which a valve and a limit switch are combined. A valve 6 includes a piston 26 as a moving member which includes a protruding portion protruding from an opening of a casing 21, and which linearly moves according to opening and closing of the valve 6 so as to abut against a limit switch 7. The limit switch 7 is made to face the piston 26 and is attached via a limit switch positioning unit 8 so as to be adjustable about its position. The limit switch positioning unit 8 includes a first bolt 42 fixed to a body 2, a second bolt 43 fixed to the limit switch 7, and a connection screw 44 which connects both the bolts 42, 43. The first bolt 42 and the second bolt 43 have different pitches from each other.
    Type: Grant
    Filed: November 25, 2010
    Date of Patent: October 20, 2015
    Assignee: FUJIKIN INCORPORATED
    Inventors: Takashi Hirose, Hiroshi Ogawa, Toshihide Yoshida, Kohei Shigyou
  • Publication number: 20150269099
    Abstract: A storage controller that controls a storage apparatus including a storage area and a plurality of access paths to the storage area is provided, the storage controller including: an obtaining unit that obtains load information indicating loads of the plurality of access paths; a determining unit that determines whether or not access paths to the storage area are to be switched, based on the load information; an identifying unit that identifies a switch candidate access path when it is determined by the determining unit that access paths are to be switched; and a switch instructing unit that instructs to switch to the switch candidate access path identified by the identifying unit.
    Type: Application
    Filed: March 18, 2015
    Publication date: September 24, 2015
    Applicant: Fujitsu Limited
    Inventors: Hidekazu KAWANO, Takashi HIROSE, Katsuhiko HADA, Hironobu SAZUKA, Toru NAGASAWA, Hiroyuki WATANABE, Shigeyuki KASHIMA
  • Patent number: 9133951
    Abstract: An orifice changeable pressure type flow rate control apparatus comprises a valve body of a control valve for a pressure type flow rate control apparatus installed between an inlet side fitting block provided with a coupling part of a fluid supply pipe and an outlet side fitting block provided with a coupling part of a fluid takeout pipe; a fluid inlet side of the valve body and the inlet side fitting block, and a fluid outlet side of the valve body and the outlet side fitting block are detachably and hermitically connected respectively so a flow passage for gases through the control valve is formed; and, a gasket type orifice for a pressure type flow rate control apparatus is removably inserted between a gasket type orifice insertion hole provided on the outlet side of the valve body and a gasket type orifice insertion hole of the outlet side fitting block.
    Type: Grant
    Filed: May 10, 2006
    Date of Patent: September 15, 2015
    Assignees: Fujikin Incorporated, National University Corporation Tohoku University
    Inventors: Tadahiro Ohmi, Kouji Nishino, Ryousuke Dohi, Nobukazu Ikeda, Masaaki Nagase, Kaoru Hirata, Katsuyuki Sugita, Tsutomu Shinohara, Takashi Hirose, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
  • Patent number: 9127796
    Abstract: A gasket type orifice includes a first orifice base having a through-type passage in a central area thereof, a second orifice base having in a central area thereof a through-type passage communicating with the passage of the first orifice base, and an orifice plate having an orifice hole formed in a central area thereof, wherein the orifice plate is mounted by insertion in an airtight manner between both orifice bases, and the gasket type orifice is installed in a fluid passage, in which the outer end faces of both orifice bases respectively serve as sealing faces, and an outer diameter of the second orifice base, located on the downstream side, is larger than an outer diameter of the first orifice base located on the upstream side, and an outer peripheral edge portion of an inner end face of the second orifice base serves as another sealing face.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: September 8, 2015
    Assignee: FUJIKIN INCORPORATED
    Inventors: Takashi Hirose, Tsutomu Shinohara, Toshihide Yoshida, Kohei Shigyou, Michio Yamaji
  • Patent number: 9115813
    Abstract: This invention provides a fluid control device which is capable of visually recognizing its opening and closing states with a simple configuration. The casing 3 is formed so as to be opened upward. The piston 8 is disposed at an upper end portion of a valve rod 7 such that a piston upper end portion is exposed from an opening of the casing 3 when the valve rod 7 is located at the upper position.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: August 25, 2015
    Assignee: FUJIKIN INCORPORATED
    Inventors: Takashi Hirose, Hiroshi Ogawa, Toshihide Yoshida, Kohei Shigyou
  • Publication number: 20150234390
    Abstract: A plurality of stacked and fixed gas supplying units U, each gas supplying unit U having at least four gas supply lines S is formed by opposingly combining and fixing two flow controllers 3, each flow controller 3 provided with a plurality of flow control units, to a gas inlet-side block 12 and a gas outlet-side block 13 that are disposed in parallel across an interval in plan view and providing each flow controller 3 with an inlet opening and closing valve 1 and an outlet opening and closing valve 5.
    Type: Application
    Filed: October 18, 2013
    Publication date: August 20, 2015
    Inventors: Mutsunori Koyomogi, Takashi Hirose, Michio Yamaji, Takahiro Matsuda
  • Patent number: 9059347
    Abstract: A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized.
    Type: Grant
    Filed: June 14, 2011
    Date of Patent: June 16, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Takashi Hirose, Naoto Kusumoto
  • Publication number: 20150160662
    Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m (P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.
    Type: Application
    Filed: February 19, 2015
    Publication date: June 11, 2015
    Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
  • Publication number: 20150162477
    Abstract: A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.
    Type: Application
    Filed: February 20, 2015
    Publication date: June 11, 2015
    Inventors: Takashi HIROSE, Naoto KUSUMOTO