Patents by Inventor Takashi Inushima
Takashi Inushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7507615Abstract: A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.Type: GrantFiled: March 31, 2003Date of Patent: March 24, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hongyong Zhang, Takashi Inushima, Takeshi Fukada
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Publication number: 20030170939Abstract: A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.Type: ApplicationFiled: March 31, 2003Publication date: September 11, 2003Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hongyong Zhang, Takashi Inushima, Takeshi Fukada
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Publication number: 20030140941Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: ApplicationFiled: January 10, 2003Publication date: July 31, 2003Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 6566175Abstract: A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.Type: GrantFiled: June 11, 2001Date of Patent: May 20, 2003Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hongyong Zhang, Takashi Inushima, Takeshi Fukada
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Patent number: 6550325Abstract: A thermistor layer made of platinum is formed on a thin diamond film. An amount of heat carried away from the diamond film by a fluid is detected as a change in the temperature of the thermistor layer. The rear side of the diamond film is kept in contact with the fluid to prevent the material of the thermistor from being corroded by the fluid. In another aspect of the invention, a heating element and a thermistor are formed on one surface of a thin diamond film. The other surface is kept in contact with a fluid. The diamond film is heated by the heating element in a quite short time of about 0.2 second. The resulting response characteristics of the diamond film are detected by the thermistor. The flow rate is calculated from the response characteristics.Type: GrantFiled: October 27, 1993Date of Patent: April 22, 2003Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Vaitkus Rimantas, Masaaki Hiroki, Eiji Sato, Satoshi Teramoto
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Patent number: 6520189Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: September 17, 1999Date of Patent: February 18, 2003Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Publication number: 20010041396Abstract: A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.Type: ApplicationFiled: June 11, 2001Publication date: November 15, 2001Inventors: Shunpei Yamazaki, Hongyong Zhang, Takashi Inushima, Takeshi Fukada
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Patent number: 6261877Abstract: A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.Type: GrantFiled: July 2, 1996Date of Patent: July 17, 2001Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hongyong Zhang, Takashi Inushima, Takeshi Fukada
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Patent number: 6177302Abstract: A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.Type: GrantFiled: September 22, 1994Date of Patent: January 23, 2001Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hongyong Zhang, Takashi Inushima, Takeshi Fukada
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Patent number: 6013338Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: November 10, 1998Date of Patent: January 11, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 5855970Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: December 18, 1996Date of Patent: January 5, 1999Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 5717215Abstract: An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with first light having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with second light having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.Type: GrantFiled: April 4, 1996Date of Patent: February 10, 1998Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Rimantas Vaitkus, Satoshi Teramoto
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Patent number: 5670777Abstract: An electronic device utilizing a material having: a photoconductive effect; a trap level for trapping an excited carrier; and an energy band gap, the device comprising: a means for illuminating the material with a first light, the first light having a wavelength corresponding to an energy higher than the energy band gap of the material; a means for illuminating the material with a second light, the second light having a wavelength corresponding to an energy lower than the energy band gap of the material; a means for measuring the quantity of second light transmitted through the material; and a means for obtaining information on the first light illuminated to the material from the quantity of the transmitted second light.Type: GrantFiled: April 12, 1995Date of Patent: September 23, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Rimantas Vaitkus, Satoshi Teramoto
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Patent number: 5629245Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: January 23, 1995Date of Patent: May 13, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 5622586Abstract: Method of fabricating a device made of a thin diamond film having a thickness of less than 10 .mu.m which is difficult to handle. The method is initiated by forming a thin diamond film on a silicon substrate to a thickness of about 5 .mu.m by chemical vapor deposition. Then, paraffin is applied. The substrate is removed with hydrofluoric acid. Thus, the diamond film is retained on the paraffin that is made to act as a base. A required circuit is formed on the surface of the diamond film. Finally, the paraffin is removed. In this way, a device using the diamond film is completed. This structure can be used as a device for measuring thermal effect, using a thin diamond film. For example, the structure can be used for fabrication of a flowsensor.Type: GrantFiled: December 30, 1994Date of Patent: April 22, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Rimantas Vaitkus, Takashi Inushima, Masaya Kadono
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Patent number: 5622607Abstract: A process for fabricating films improved in interface characteristics, which comprises depositing an oxide insulating film by sputtering under an irradiation of a light in an atmosphere comprising an oxidative gas at an amount larger than that of an inactive gas is disclosed. Particularly, a light having a wavelength of 300 nm or shorter is used for the irradiation.Type: GrantFiled: November 15, 1991Date of Patent: April 22, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takashi Inushima
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Patent number: 5610405Abstract: An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first electromagnetic emission, (which may include visible light, ultraviolet light, gamma rays, or x-rays) having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with a second electromagnetic emission having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first emission can be known by measuring the induced photocurrent.Type: GrantFiled: March 23, 1994Date of Patent: March 11, 1997Assignee: Semiconductor Energy Laboratory, Co., Ltd.Inventors: Takashi Inushima, Rimantas Vaitkus, Satoshi Teramoto
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Patent number: 5608666Abstract: An electronic apparatus comprising a material having a photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first light having photon energies greater than the energy bandgap of the material. Then, the material is illuminated with a second light having photon energies smaller than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.Type: GrantFiled: January 30, 1995Date of Patent: March 4, 1997Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Rimantas Vaitkus, Satoshi Teramoto
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Patent number: 5591988Abstract: A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1).Type: GrantFiled: June 7, 1995Date of Patent: January 7, 1997Assignees: TDK Corporation, Semiconductor Energy Lab. Co. Ltd.Inventors: Michio Arai, Takashi Inushima, Mitsufumi Codama, Kazushi Sugiura, Ichiro Takayama, Isamu Kobori, Yukio Yamauchi, Naoya Sakamoto
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Patent number: 5574293Abstract: A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4'). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1).Type: GrantFiled: November 22, 1994Date of Patent: November 12, 1996Assignees: TDK Corp., Semiconductor Energy Laboratory Co. Ltd.Inventors: Michio Arai, Takashi Inushima, Mitsufumi Codama, Kazushi Sugiura, Ichiro Takayama, Isamu Kobori, Yukio Yamauchi, Naoya Sakamoto