Patents by Inventor Takashi Inushima
Takashi Inushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5469424Abstract: An electronic device comprising a diamond illuminated with ultraviolet radiation, a light source for illuminating the diamond with visible light, and a means for measuring a photocurrent induced in the diamond. The ultraviolet radiation has wavelengths shorter than about 230 nm corresponding to the energy bandgap of the diamond and is made to impinge on the diamond. Then, the light which has wavelengths longer than about 230 nm is made to impinge on the diamond. The photocurrent induced in the diamond is measured. In this way, the amount of the previously emitted ultraviolet radiation having wavelengths shorter than about 230 nm is known. Although the diamond is a primary substance to be illuminated, the substance to be illuminated comprises a material selected from a group consisting of diamond, boron nitride, aluminum nitride and a multi-layer thereof.Type: GrantFiled: February 22, 1994Date of Patent: November 21, 1995Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Rimantas Vaitkus
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Patent number: 5427824Abstract: An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.Type: GrantFiled: September 8, 1992Date of Patent: June 27, 1995Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Patent number: 5406081Abstract: A detector using a diamond thin film having high response speed and sensitivity. A p-type layer may be formed in an upper portion of the diamond film by doping boron thereto. Since a sensor layer and a heat reservoir layer are united in one layer, a higher sensitivity and a higher response speed can be achieved.Type: GrantFiled: November 29, 1993Date of Patent: April 11, 1995Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Takashi Inushima
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Patent number: 5320984Abstract: There is disclosed a method for forming a semiconductor film having a high electrical conductivity on a substrate at a low temperature below 200.degree. C. with high productivity by sputtering. For example, the sputtering process is carried out within an inert atmosphere consisting of an inert gas such as argon and hydrogen. The substrate is electrically insulated (floating) from the surroundings. The distance between the substrate and a target is set to a large value. Preferably, the ratio of the partial pressure of the hydrogen to the total pressure is 30 % or more. The target consists of a semiconductor doped with an impurity that imparts one conductivity type to the semiconductor, in the case where a semiconductor film containing an impurity that imparts the conductivity type to the semiconductor film is formed on the substrate. This impurity is for example a group III or V element.Type: GrantFiled: December 20, 1991Date of Patent: June 14, 1994Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hongyong Zhang, Shunpei Yamazaki, Takashi Inushima
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Patent number: 5298749Abstract: A infrared and/or farinfrared detector using a diamond thin film having high response speed and sensitivity is disclosed. A p-type layer is formed in an upper portion of the diamond film by doping boron thereto. Since a sensor layer and a heat reservoir layer are united in one layer, a higher sensitivity and a higher response speed can be achieved.Type: GrantFiled: September 29, 1992Date of Patent: March 29, 1994Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Takashi Inushima
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Patent number: 5283087Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: April 6, 1992Date of Patent: February 1, 1994Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 5256483Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: October 31, 1990Date of Patent: October 26, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 5043567Abstract: A method of manufacturing image sensors where (a) a first conductive film of a transparent material is formed over and in contact with a transparent substrate; (b) a photosensitive semiconductor film is formed over and in contact with the film; (c) the first conductive film and the semiconductor film are patterned by laser scribing; (d) a first insulating film is formed over the above films and in contact with the first conductive film and the semiconductor film and portions thereof are removed which are not necessary to define the image sensors in the patterned semiconductor film; (e) a second conductive film is formed over the semiconductor film and the remaining portions of the first insulating film in order to make contact with the semiconductor film; (f) the second conductive film is patterned; (g) a second insulating film is formed over and in contact with the second conductive film; (h) the second insulating film is patterned; and (i) an electrode arrangement is formed for withdrawing electrical signalType: GrantFiled: May 21, 1990Date of Patent: August 27, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Takeshi Fukada, Naoya Sakamoto, Nobumitsu Amachi, Shigenori Hayashi, Takashi Inushima
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Patent number: 5039548Abstract: An improved plasma chemical vapor reaction apparatus is described. The apparatus comprises a reaction chamber, a gas feeding system for introducing a reactive gas into the reaction chamber, Helmholtz coils for inducing a magnetic field in the reaction chamber, a microwave generator for inputting microwaves into the reaction chamber, a substrate holder for supporting a substrate to be treated in the reaction chamber. The substrate holder is located with respect to said magnetic field inducing means in order that the graduent vector of the strength of the magnetic field induced by the Helmoholts coils is directed toward the substrate in the vicinity of the surface of the substrate to be treated. By virtue of the magnetic field caracterized by such a gradient vector, the plasma gas in the reaction chamber is drifted toward the substrate.Type: GrantFiled: January 19, 1989Date of Patent: August 13, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Naoki Hirose, Takashi Inushima
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Patent number: 5017502Abstract: Disclosed is a method for producing image sensors having a plurality of sensing elements including the formation of parallel separating grooves by laser irradiation, the filling of the grooves with an insulating film, and the subsequent provision of a groove in the insulating film in a direction diagonal to the parallel grooves for metallization.Type: GrantFiled: January 22, 1990Date of Patent: May 21, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Takeshi Fukada, Naoya Sakamoto, Nobumitsu Amachi, Shigenori Hayashi, Takashi Inushima
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Patent number: 5007374Abstract: An apparatus suitable for mass-production of carbon coatings having a high degree of hardness. The apparatus utilized two types of energy input. First energy is inputted to a pair of electrodes provided in a reaction chamber, between which electrodes a deposition space is defined. A number of substrates to be coated are mounted on a plurality of substrate holders which are supplied with a second electric energy. The holders are arranged parallel to the electric field to prevent disturbance of the electric field.Type: GrantFiled: March 17, 1989Date of Patent: April 16, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shinji Imatou, Mitsunori Tsuchiya, Kenji Itoh, Takashi Inushima, Atsushi Kawano
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Patent number: 4987004Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: May 11, 1990Date of Patent: January 22, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 4971667Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: February 3, 1989Date of Patent: November 20, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 4943710Abstract: This invention relates to an image sensor and manufacturing method for the same.Type: GrantFiled: June 22, 1988Date of Patent: July 24, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Takeshi Fukada, Naoya Sakamoto, Nobumitsu Amachi, Shigenori Hayashi, Takashi Inushima
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Patent number: 4855805Abstract: The present invention provides a nonlinear semiconductor element which has a V-I characteristic of excellent origin symmetry and a liquid crystal display panel which employs such nonlinear semiconductor element. The nonlinear semiconductor has an n-i-n, n-i-p-i-n, or p-i-n-i-p type structure. The i-type semiconductor layer is intentionally doped with boron, which acts to make the i-type semiconductor layer more intrinsic.Type: GrantFiled: June 3, 1988Date of Patent: August 8, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Akira Mase, Toshimitsu Konuma, Minoru Miyazaki, Mitsunori Sakama, Takashi Inushima
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Patent number: 4844588Abstract: A method for manufacturing a liquid crystal device including forming a semiconductor layer on a first substrate and an underlying conductive layer; separating the semiconductor layer and the underlying conductive layer into the elements of an array by removing the parts of the semiconductor and the conductive layer between the elements; insulating the side surfaces of the elements of said array; forming an overlying conductive layer on the first substrate over the array; removing the conductive layer other than at least one strip extending over a part of each surface of the elements arranged in a line, together with the underlying semiconductor layer whereby parts of the separated underlying conductors are exposed in the form of a plurality of first electrodes; and mating the first substrate to a second substrate having a plurality of second electrodes corresponding to the first electrodes, with a liquid crystal layer in between.Type: GrantFiled: January 25, 1988Date of Patent: July 4, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takashi Inushima, Akira Mase, Toshimitsu Konuma, Minoru Miyazaki, Mitsunori Sakama
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Patent number: 4828967Abstract: A method of forming an insulated, non-linear, multi-layered, electronic element on a transparent substrate by surrounding the element with a photocurable resin and exposing the photocurable resin to light from the side of the transparent substrate, the photocurable resin being heat-hardened before and after the light exposure thereof so that the resulting insulating layer prevents electrical short circuits between the layers of the non-linear, multi-layered, electronic element.Type: GrantFiled: June 17, 1986Date of Patent: May 9, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akira Mase, Toshimitsu Konuma, Mitsunori Sakama, Takashi Inushima, Shunpei Yamazaki
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Patent number: 4820612Abstract: A method of forming an insulated, non-linear, multi-layered, electronic element on a transparent substrate by surrounding the element with a photosensitive organic resin layer and exposing the photosensitive layer to light from the side of the transparent substrate, the photosensitive layer being heat-hardened before and after the light exposure thereof so that the resulting insulating layer prevents electrical short circuits between the layers of the non-linear, multi-layered, electronic element.Type: GrantFiled: August 18, 1987Date of Patent: April 11, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akira Mase, Toshimitsu Konuma, Mitsunori Sakama, Takashi Inushima, Shunpei Yamazaki
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Patent number: 4780794Abstract: A electronic multilayer device is formed within a photocured insulative layer using a transparent substrate thereby forming a surface contamination free device without shorts between the layers of the device.Type: GrantFiled: August 10, 1987Date of Patent: October 25, 1988Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akira Mase, Toshimitsu Konuma, Mitsunori Sakama, Takashi Inushima, Shunpei Yamazaki
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Patent number: 4744862Abstract: A method of manufacturing a liquid crystal display panel including preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member where the forming of the first non-single-crystal semiconductor laminate member includes forming at least a first non-single-crystal semiconductor of P (or N) type on the substrate, forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconduictor layer, the i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and forming a third non-single-crystal semiconductor layer of P (or N) type on the i-type second non-single-crystal semiconductor layer; forming a second conductive layer serving as a second electrode in a pattern on the first non-single-crystal semiconductor layer laminatType: GrantFiled: January 2, 1987Date of Patent: May 17, 1988Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Akira Mase, Toshimitsu Konuma, Minoru Miyazaki, Mitsunori Sakama, Takashi Inushima