Abstract: A geared electric motor comprises: an output gear configured to rotate around an axial line parallel to a rotor shaft as an axis of rotation; an output shaft configured to rotate integrally with the output gear, the output shaft being arranged at a position facing an input gear with a distance in a direction of the axis of rotation; a first holding member holding the rotor bearing; a second holding member holding a first output bearing; and a third holding member holding a second output bearing. The first holding member, the second holding member, and the third holding member are fixed to each other with the third holding member sandwiched between the first holding member and the second holding member.

Abstract: According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.

Abstract: A control device is mounted on a vehicle including a door opening and closing mechanism for opening and closing a door of an entrance and exit where a passenger gets on and off, and a shift device for changing a driving range of a transmission. The driving range is input to the control device and the control device opens and closes the door by the door opening and closing mechanism. The control device permits opening of the door when the driving range is a parking range, and prohibits a change of the driving range of the shift device when the driving range is the parking range and the door is open.

Abstract: The present invention provides a composition comprising an ionic liquid and a poorly absorbable drug, wherein the ionic liquid is prepared from an anion and a cation, the anion is an organic acid having 3 to 7 carbon atoms, and the cation is selected from the group consisting of arginine, meglumine, trometamol and diethanolamine, which remarkably improves the absorbability of the poorly absorbable drug.

Abstract: A coil component includes a drum core including a winding core portion, and first and second flange portions; and a first metal terminal which includes a bonding portion, a connecting portion, a mounting portion, an extending portion, and a joining portion. The first flange portion includes a main body portion, an end-surface-side protruding portion protruding from an outer end surface of the main body portion and a bottom-surface-side protruding portion protruding from a bottom surface of the main body portion. In a direction parallel to a second axis, a shortest distance from an end of the end-surface-side protruding portion on the second positive direction side to the joining portion is a first distance. A maximum distance from the end of the end-surface-side protruding portion to a side end surface of the end-surface-side protruding portion is a second distance. The first distance is larger than the second distance.

Abstract: Provided is a chemical decontamination method that shortens the decomposition time of a reduction decontamination agent. An oxidization decontamination, a decomposition of an oxidization decontamination agent, and reduction decontamination using an oxalic acid aqueous solution are performed on a target piping of a BWR plant. After that, the oxalic acid is decomposed (S7). That is, a part of the oxalic acid is decomposed by irradiating the oxalic acid aqueous solution with ultraviolet rays upstream of a decomposition device (S8), and Fe3+ in the aqueous solution is converted to Fe2+. Hydrogen peroxide is supplied to the decomposition device (S9). In the decomposition device, the oxalic acid is decomposed by a catalyst and hydrogen peroxide, Fe2+ and hydrogen peroxide react to produce Fe3+ and OH*, and the oxalic acid is decomposed by OH*. A corrosion potential of the aqueous solution flowing out from the decomposition device is measured (S11).

Abstract: A particle analyzer (100) includes: a light source that emits excitation light (EL1) including light having a wavelength of 400 nm or less; a lens structure (41) that collects excitation light (EL1) at a predetermined position (51s) in a flow path (53); a detection unit (7) that detects light (FL) emitted from a particle as the particle (51) flowing through the predetermined position is excited by the excitation light (EL1); and a processing unit (120) that processes detection data acquired by the detection unit (7). The lens structure (41) includes a plurality of lenses (411) arranged along an optical axis of the excitation light (EL1); and a lens frame (412) holding the plurality of lenses (411). At least one (G12) of the plurality of lenses (411) is positioned in the lens frame (412) by abutting on a lens adjacent to the lens.

Abstract: A semiconductor device includes a gallium nitride substrate and a pattern film disposed on a front surface of the gallium nitride substrate. In the gallium nitride substrate, a Young's modulus in a first direction along the front surface is larger than a Young's modulus in a second direction along the front surface and orthogonal to the first direction. A first ratio R1 obtained by dividing a dimension of the gallium nitride substrate in the first direction by a dimension of the gallium nitride substrate in the second direction and a second ratio R2 obtained by dividing a dimension of the pattern film in the first direction by a dimension of the pattern film in the second direction satisfy a relationship of R1<R2.

Abstract: An object of the present invention is to provide a novel plant growth inhibiting agent and a plant growth inhibiting method using the same. The plant growth inhibiting agent of the present invention comprises, as an active ingredient, a compound represented by the following formula (I?) and/or a salt thereof. In the formula (I?), R1a represents a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C14 aryl group, a substituted or unsubstituted C3 to C13 heteroaryl group, or the like; R2 represents a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C14 arylene group, or the like; R3a represents OH, a substituted or unsubstituted C1 to C6 alkoxy group, or the like; X represents an oxygen atom; Y represents a substituent; q represents any integer of 0 to 3; n represents 0 or 1; and m represents 0 or 1.

Abstract: A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

Abstract: A method for manufacturing a semiconductor device includes: irradiating, with laser light, a semiconductor substrate having a p-type first semiconductor layer and an n-type second semiconductor layer so that the laser light converges on an interface between the first semiconductor layer and the second semiconductor layer, wherein each of the p-type first semiconductor layer and the n-type second semiconductor layer placed on the first semiconductor layer is formed of a compound semiconductor; and separating the semiconductor substrate into the first semiconductor layer and the second semiconductor layer along the interface.

Abstract: An extraction bag 1A includes a bag main body 3 formed of a water permeable filter sheet 2, a thin plate-like member 10 provided on an outer surface of the bag main body 3, and an extraction material filled in the bag main body 3. The bag main body 3 has a first surface 3A and a second surface 3B opposed to each other, and an upper side 4a corresponding to edges thereof. The thin plate-like member 10 includes a first member 10A on the first surface 3A of the bag main body, and a second member 10B on the second surface 3B of the bag main body, and these 10A and 10B are continuous with each other via a first horizontal folding line Lh1 extending along the upper side 4a.

Abstract: A semiconductor storage device includes: a first stack having a first insulation film and a first conductive film alternately stacked in a first direction; a plurality of first column portions respectively including a first semiconductor portion extending in the first stack in the first direction and a charge trapping film provided on an outer circumferential surface of the first semiconductor portion; and a first isolation portion penetrating through an upper-layer portion of the first stack in the first direction, extending in a second direction that crosses the first direction, including a second insulation film and a third insulation film arranged via the second insulation film, and configured to electrically isolate the first conductive film included in the upper-layer portion of the first stack in a third direction that crosses the first and second directions.

Abstract: A semiconductor storage device includes a plurality of memory cell transistors, a first wiring electrically connected to the plurality of memory cell transistors, and an erasing circuitry. The erasing circuitry is configured to erase data stored in the memory cell transistors by applying a first voltage to the first wiring, and apply the first voltage such that the first voltage rises to a first value, then falls from the first value to a second value, and is then maintained at the second value.

Abstract: A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends through the plurality of electrode layers in a stacking direction of the plurality of electrode layers. The second semiconductor layer includes an end portion inside the first semiconductor layer. The first film is positioned inside the first semiconductor layer and contacts the first semiconductor layer. The first semiconductor layer includes a first portion, a second portion, and a third portion. The first film is positioned between the first portion and the second portion. The third portion links the first portion and the second portion. The third portion is positioned between the first film and the second semiconductor layer. The second semiconductor layer includes a contact portion contacting the third portion of the first semiconductor layer.

Abstract: A method for forming a composite material including reinforcing fibers includes connecting end portions of the reinforcing fibers with equipotential materials to form an electroconductive loop including the reinforcing fibers in the composite material before reaction; and applying a magnetic field in a direction intersecting a plane formed by the electroconductive loop.

Abstract: An object of the present invention is to provide a novel plant growth inhibiting agent and a plant growth inhibiting method using the same. The plant growth inhibiting agent of the present invention comprises, as an active ingredient, a compound represented by the following formula (I?) and/or a salt thereof. In the formula (I?), R1a represents a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C14 aryl group, a substituted or unsubstituted C3 to C13 heteroaryl group, or the like; R2 represents a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C14 arylene group, or the like; R3a represents OH, a substituted or unsubstituted C1 to C6 alkoxy group, or the like; X represents an oxygen atom; Y represents a substituent; q represents any integer of 0 to 3; n represents 0 or 1; and m represents 0 or 1.

Abstract: A semiconductor memory device includes a substrate, gate electrodes arranged in a thickness direction of the substrate, first and second semiconductor layers, a gate insulating film, and a first contact. The first semiconductor layer extends in the thickness direction and faces the gate electrodes. The gate insulating film is between the gate electrodes and the first semiconductor layer. The second semiconductor layer is between the substrate and the gate electrodes and connected to a side surface of the first semiconductor layer in a surface direction. The first contact extends in the thickness direction and electrically connected to the second semiconductor layer. The second semiconductor layer includes a first region in contact with the side surface of the first semiconductor layer and containing P-type impurities, and a first contact region electrically connected to the first contact and having a higher concentration of N-type impurities than the first region.

Abstract: A water-type or oil-in-water type cosmetic provided with a watery feeling in use and high ultraviolet protection ability. The water-type or oil-in-water-type cosmetic according to the present invention is characterized by containing (A) a porous spherical powder having an average particle size of 1 to 4 ?m and an oil absorption rate of 160 ml/100 g or lower; and (B) an ultraviolet absorption agent.

Abstract: A semiconductor storage device includes a plurality of memory cell transistors, a first wiring electrically connected to the plurality of memory cell transistors, and an erasing circuitry. The erasing circuitry is configured to erase data stored in the memory cell transistors by applying a first voltage to the first wiring, and apply the first voltage such that the first voltage rises to a first value, then falls from the first value to a second value, and is then maintained at the second value.