Patents by Inventor Takashi Ishida

Takashi Ishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240068925
    Abstract: A particle analyzer (100) includes: a light source that emits excitation light (EL1) including light having a wavelength of 400 nm or less; a lens structure (41) that collects excitation light (EL1) at a predetermined position (51s) in a flow path (53); a detection unit (7) that detects light (FL) emitted from a particle as the particle (51) flowing through the predetermined position is excited by the excitation light (EL1); and a processing unit (120) that processes detection data acquired by the detection unit (7). The lens structure (41) includes a plurality of lenses (411) arranged along an optical axis of the excitation light (EL1); and a lens frame (412) holding the plurality of lenses (411). At least one (G12) of the plurality of lenses (411) is positioned in the lens frame (412) by abutting on a lens adjacent to the lens.
    Type: Application
    Filed: December 9, 2021
    Publication date: February 29, 2024
    Applicant: Sony Group Corporation
    Inventors: Takeshi Hatakeyama, Satoshi Nagae, Masanobu Nonaka, Kenji Ishida, Naomichi Kikuchi, Takashi Kato
  • Publication number: 20240071640
    Abstract: Provided is a chemical decontamination method that shortens the decomposition time of a reduction decontamination agent. An oxidization decontamination, a decomposition of an oxidization decontamination agent, and reduction decontamination using an oxalic acid aqueous solution are performed on a target piping of a BWR plant. After that, the oxalic acid is decomposed (S7). That is, a part of the oxalic acid is decomposed by irradiating the oxalic acid aqueous solution with ultraviolet rays upstream of a decomposition device (S8), and Fe3+ in the aqueous solution is converted to Fe2+. Hydrogen peroxide is supplied to the decomposition device (S9). In the decomposition device, the oxalic acid is decomposed by a catalyst and hydrogen peroxide, Fe2+ and hydrogen peroxide react to produce Fe3+ and OH*, and the oxalic acid is decomposed by OH*. A corrosion potential of the aqueous solution flowing out from the decomposition device is measured (S11).
    Type: Application
    Filed: October 29, 2021
    Publication date: February 29, 2024
    Inventors: Tsuyoshi ITOU, Kazushige ISHIDA, Hideyuki HOSOKAWA, Shintaro YANAGISAWA, Takashi OOHIRA
  • Publication number: 20240014272
    Abstract: A semiconductor device includes a gallium nitride substrate and a pattern film disposed on a front surface of the gallium nitride substrate. In the gallium nitride substrate, a Young's modulus in a first direction along the front surface is larger than a Young's modulus in a second direction along the front surface and orthogonal to the first direction. A first ratio R1 obtained by dividing a dimension of the gallium nitride substrate in the first direction by a dimension of the gallium nitride substrate in the second direction and a second ratio R2 obtained by dividing a dimension of the pattern film in the first direction by a dimension of the pattern film in the second direction satisfy a relationship of R1<R2.
    Type: Application
    Filed: July 3, 2023
    Publication date: January 11, 2024
    Inventors: Seiya HASEGAWA, Takashi USHIJIMA, Takashi ISHIDA, Shoichi ONDA, Chiaki SASAOKA, Jun KOJIMA
  • Patent number: 11685716
    Abstract: An object of the present invention is to provide a novel plant growth inhibiting agent and a plant growth inhibiting method using the same. The plant growth inhibiting agent of the present invention comprises, as an active ingredient, a compound represented by the following formula (I?) and/or a salt thereof. In the formula (I?), R1a represents a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C14 aryl group, a substituted or unsubstituted C3 to C13 heteroaryl group, or the like; R2 represents a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C14 arylene group, or the like; R3a represents OH, a substituted or unsubstituted C1 to C6 alkoxy group, or the like; X represents an oxygen atom; Y represents a substituent; q represents any integer of 0 to 3; n represents 0 or 1; and m represents 0 or 1.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: June 27, 2023
    Assignees: National University Corporation Kumamoto University, Nippon Soda Co., Utd.
    Inventors: Hayato Ishikawa, Tokio Tani, Shinichiro Sawa, Takashi Ishida, Yusuke Fukushima, Jun Inagaki
  • Publication number: 20230160104
    Abstract: A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.
    Type: Application
    Filed: November 16, 2022
    Publication date: May 25, 2023
    Inventors: Junji OHARA, Takashi ISHIDA, Yoshitaka NAGASATO, Daisuke KAWAGUCHI, Chiaki SASAOKA, Shoichi ONDA, Jun KOJIMA
  • Publication number: 20230154756
    Abstract: A method for manufacturing a semiconductor device includes: irradiating, with laser light, a semiconductor substrate having a p-type first semiconductor layer and an n-type second semiconductor layer so that the laser light converges on an interface between the first semiconductor layer and the second semiconductor layer, wherein each of the p-type first semiconductor layer and the n-type second semiconductor layer placed on the first semiconductor layer is formed of a compound semiconductor; and separating the semiconductor substrate into the first semiconductor layer and the second semiconductor layer along the interface.
    Type: Application
    Filed: October 25, 2022
    Publication date: May 18, 2023
    Inventor: TAKASHI ISHIDA
  • Patent number: 11643270
    Abstract: An extraction bag 1A includes a bag main body 3 formed of a water permeable filter sheet 2, a thin plate-like member 10 provided on an outer surface of the bag main body 3, and an extraction material filled in the bag main body 3. The bag main body 3 has a first surface 3A and a second surface 3B opposed to each other, and an upper side 4a corresponding to edges thereof. The thin plate-like member 10 includes a first member 10A on the first surface 3A of the bag main body, and a second member 10B on the second surface 3B of the bag main body, and these 10A and 10B are continuous with each other via a first horizontal folding line Lh1 extending along the upper side 4a.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: May 9, 2023
    Assignee: OHKI CO., LTD.
    Inventors: Takashi Ishida, Mitsunori Saitoh
  • Publication number: 20230066475
    Abstract: A semiconductor storage device includes: a first stack having a first insulation film and a first conductive film alternately stacked in a first direction; a plurality of first column portions respectively including a first semiconductor portion extending in the first stack in the first direction and a charge trapping film provided on an outer circumferential surface of the first semiconductor portion; and a first isolation portion penetrating through an upper-layer portion of the first stack in the first direction, extending in a second direction that crosses the first direction, including a second insulation film and a third insulation film arranged via the second insulation film, and configured to electrically isolate the first conductive film included in the upper-layer portion of the first stack in a third direction that crosses the first and second directions.
    Type: Application
    Filed: December 13, 2021
    Publication date: March 2, 2023
    Applicant: Kioxia Corporation
    Inventors: Shun SHIMIZU, Takashi ISHIDA
  • Patent number: 11574681
    Abstract: A semiconductor storage device includes a plurality of memory cell transistors, a first wiring electrically connected to the plurality of memory cell transistors, and an erasing circuitry. The erasing circuitry is configured to erase data stored in the memory cell transistors by applying a first voltage to the first wiring, and apply the first voltage such that the first voltage rises to a first value, then falls from the first value to a second value, and is then maintained at the second value.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: February 7, 2023
    Assignee: KIOXIA CORPORATION
    Inventors: Takashi Ishida, Hiroshi Kanno
  • Publication number: 20220115403
    Abstract: A semiconductor memory device includes a plurality of electrode layers stacked above a first semiconductor layer, a second semiconductor layer and a first film. The second semiconductor layer extends through the plurality of electrode layers in a stacking direction of the plurality of electrode layers. The second semiconductor layer includes an end portion inside the first semiconductor layer. The first film is positioned inside the first semiconductor layer and contacts the first semiconductor layer. The first semiconductor layer includes a first portion, a second portion, and a third portion. The first film is positioned between the first portion and the second portion. The third portion links the first portion and the second portion. The third portion is positioned between the first film and the second semiconductor layer. The second semiconductor layer includes a contact portion contacting the third portion of the first semiconductor layer.
    Type: Application
    Filed: December 22, 2021
    Publication date: April 14, 2022
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Takayuki MARUYAMA, Yoshiaki FUKUZUMI, Yuki SUGIURA, Shinya ARAI, Fumie KIKUSHIMA, Keisuke SUDA, Takashi ISHIDA
  • Publication number: 20220080682
    Abstract: A method for forming a composite material including reinforcing fibers includes connecting end portions of the reinforcing fibers with equipotential materials to form an electroconductive loop including the reinforcing fibers in the composite material before reaction; and applying a magnetic field in a direction intersecting a plane formed by the electroconductive loop.
    Type: Application
    Filed: January 16, 2020
    Publication date: March 17, 2022
    Inventors: Toshiyuki TAKAYANAGI, Naomoto ISHIKAWA, Wataru NISHIMURA, Nobuyuki KAMIHARA, Sota KAMO, Kiyoka TAKAGI, Takashi ISHIDA, Tomoharu DENGO, Mikio MURAOKA, Yukihiro YOSHIDA
  • Publication number: 20220048857
    Abstract: An object of the present invention is to provide a novel plant growth inhibiting agent and a plant growth inhibiting method using the same. The plant growth inhibiting agent of the present invention comprises, as an active ingredient, a compound represented by the following formula (I?) and/or a salt thereof. In the formula (I?), R1a represents a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C14 aryl group, a substituted or unsubstituted C3 to C13 heteroaryl group, or the like; R2 represents a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C14 arylene group, or the like; R3a represents OH, a substituted or unsubstituted C1 to C6 alkoxy group, or the like; X represents an oxygen atom; Y represents a substituent; q represents any integer of 0 to 3; n represents 0 or 1; and m represents 0 or 1.
    Type: Application
    Filed: September 10, 2021
    Publication date: February 17, 2022
    Applicants: NATIONAL UNIVERSITY CORPORATION KUMAMOTO UNIVERSITY, Nippon Soda Co., Ltd.
    Inventors: Hayato ISHIKAWA, Tokio TANI, Shinichiro SAWA, Takashi ISHIDA, Yusuke FUKUSHIMA, Jun INAGAKI
  • Patent number: 11251193
    Abstract: A semiconductor memory device includes a substrate, gate electrodes arranged in a thickness direction of the substrate, first and second semiconductor layers, a gate insulating film, and a first contact. The first semiconductor layer extends in the thickness direction and faces the gate electrodes. The gate insulating film is between the gate electrodes and the first semiconductor layer. The second semiconductor layer is between the substrate and the gate electrodes and connected to a side surface of the first semiconductor layer in a surface direction. The first contact extends in the thickness direction and electrically connected to the second semiconductor layer. The second semiconductor layer includes a first region in contact with the side surface of the first semiconductor layer and containing P-type impurities, and a first contact region electrically connected to the first contact and having a higher concentration of N-type impurities than the first region.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: February 15, 2022
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Ken Komiya, Takashi Ishida, Hiroshi Kanno
  • Publication number: 20220015996
    Abstract: A water-type or oil-in-water type cosmetic provided with a watery feeling in use and high ultraviolet protection ability. The water-type or oil-in-water-type cosmetic according to the present invention is characterized by containing (A) a porous spherical powder having an average particle size of 1 to 4 ?m and an oil absorption rate of 160 ml/100 g or lower; and (B) an ultraviolet absorption agent.
    Type: Application
    Filed: November 18, 2019
    Publication date: January 20, 2022
    Applicant: Shiseido Company, Ltd.
    Inventors: Yurika WATANABE, Takashi ISHIDA, Kazuhiro YAMAGUCHI
  • Publication number: 20210391011
    Abstract: A semiconductor storage device includes a plurality of memory cell transistors, a first wiring electrically connected to the plurality of memory cell transistors, and an erasing circuitry. The erasing circuitry is configured to erase data stored in the memory cell transistors by applying a first voltage to the first wiring, and apply the first voltage such that the first voltage rises to a first value, then falls from the first value to a second value, and is then maintained at the second value.
    Type: Application
    Filed: March 3, 2021
    Publication date: December 16, 2021
    Inventors: Takashi ISHIDA, Hiroshi KANNO
  • Patent number: 11142497
    Abstract: An object of the present invention is to provide a novel plant growth inhibiting agent and a plant growth inhibiting method using the same. The plant growth inhibiting agent of the present invention comprises, as an active ingredient, a compound represented by the following formula (I?) and/or a salt thereof. In the formula (I?), R1a represents a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C14 aryl group, a substituted or unsubstituted C3 to C13 heteroaryl group, or the like; R2 represents a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C14 arylene group, or the like; R3a represents OH, a substituted or unsubstituted C1 to C6 alkoxy group, or the like; X represents an oxygen atom; Y represents a substituent; q represents any integer of 0 to 3; n represents 0 or 1; and m represents 0 or 1.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: October 12, 2021
    Assignees: National University Corporation Kumamoto University, Nippon Soda Co., Ltd.
    Inventors: Hayato Ishikawa, Tokio Tani, Shinichiro Sawa, Takashi Ishida, Yusuke Fukushima, Jun Inagaki
  • Publication number: 20210284434
    Abstract: An extraction bag 1A includes a bag main body 3 formed of a water permeable filter sheet 2, a thin plate-like member 10 provided on an outer surface of the bag main body 3, and an extraction material filled in the bag main body 3. The bag main body 3 has a first surface 3A and a second surface 3B opposed to each other, and an upper side 4a corresponding to edges thereof. The thin plate-like member 10 includes a first member 10A on the first surface 3A of the bag main body, and a second member 10B on the second surface 3B of the bag main body, and these 10A and 10B are continuous with each other via a first horizontal folding line Lh1 extending along the upper side 4a.
    Type: Application
    Filed: March 11, 2020
    Publication date: September 16, 2021
    Applicant: OHKI Co., Ltd.
    Inventors: Takashi ISHIDA, Mitsunori SAITOH
  • Publication number: 20210276950
    Abstract: An object of the present invention is to provide a novel plant growth inhibiting agent and a plant growth inhibiting method using the same. The plant growth inhibiting agent of the present invention comprises, as an active ingredient, a compound represented by the following formula (I?) and/or a salt thereof. In the formula (I?), R1a represents a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C14 aryl group, a substituted or unsubstituted C3 to C13 heteroaryl group, or the like; R2 represents a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C6 to C14 arylene group, or the like; R3a represents OH, a substituted or unsubstituted C1 to C6 alkoxy group, or the like; X represents an oxygen atom; Y represents a substituent; q represents any integer of 0 to 3; n represents 0 or 1; and m represents 0 or 1.
    Type: Application
    Filed: February 6, 2018
    Publication date: September 9, 2021
    Applicants: NATIONAL UNIVERSITY CORPORATION KUMAMOTO UNIVERSITY, Nippon Soda Co., Ltd.
    Inventors: Hayato ISHIKAWA, Tokio TANI, Shinichiro SAWA, Takashi ISHIDA, Yusuke FUKUSHIMA, Jun INAGAKI
  • Publication number: 20210273055
    Abstract: A semiconductor storage device according to the present embodiment includes a first semiconductor layer containing impurities. A stacked body is provided above the first semiconductor layer and includes insulating layers and conductive layers that are alternately stacked. A semiconductor body penetrates through the stacked body in a stacking direction to reach the first semiconductor layer and includes a lower region on a side of the first semiconductor layer and an upper region positioned above the lower region. A charge accumulation part is provided between the semiconductor bodies and the conductive layers. An impurity concentration of the lower region of the semiconductor body is higher than that of the first semiconductor layer.
    Type: Application
    Filed: September 14, 2020
    Publication date: September 2, 2021
    Inventors: Naomi YANAI, Yasuhito YOSHIMIZU, Takashi ISHIDA
  • Patent number: 11075122
    Abstract: A semiconductor device according to an embodiment includes: a semiconductor substrate including a first surface, a first contact part provided at a deeper level than the first surface, and a second contact part protruding up to a higher level than the first surface from the first contact part; a stacked body in which insulating layers and electrode layers are alternately stacked on the first surface; and a semiconductor film extending, on the second contact part, in the stacked body in a first direction perpendicular to the first surface. At an interface between the first contact part and the second contact part, a length of the first contact part in a second direction parallel to the first surface is larger than a length of the second contact part in the second direction.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: July 27, 2021
    Assignee: Kioxia Corporation
    Inventors: Tomonari Shioda, Takashi Ishida