Abstract: A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I(111)) to peak intensity of (220) face (I(220)) of Si, (I(111)/I(220)), falling within the range of 1.8±0.3. The Si sputtering target comprises, for example, an Si sintered material of 70 to 95% relative density. With respect to sputtering films such as Si oxide film, the film thickness characteristics, film formation cost, etc. can be improved by the use of this Si sputtering target.

Abstract: A manufacturing method for a rotary electric machine according to the present invention comprises steps of: (1) preforming a coil including a plurality of element coils of an insulated conductor; (2) inserting a first side of a first element coil of the element coils into a first slot of a stator core through an opening of the first slot; (3) inserting a second side of the first element coil into a second slot in which a first side of a second element coil of the element coil has been already inserted; (4) electrically connecting coil ends of a plurality of the coils to each other; and (5) rotatably mounting a rotor inside the stator core.

Abstract: A rotating machinery is to be provided wherein coils can be wound round a stator core in a minimized state of connected parts. In a rotating machinery comprising a stator formed annularly and a rotor disposed rotatably on the inner periphery side of the stator, the stator comprises a stator core, the stator core having in the circumferential direction a plurality of slots each having a coil inserting portion on the inner periphery side, and coils wound by lap winding within the slots, at least the lap-wound winding portion of the coils in each slot being constituted by a continuous line and wound at a coil end so as to straddle the inner periphery side and the outer periphery side of the slot. According to this construction there is no increase in the number of connected parts even if the number of turns in the winding portion is increased.

Abstract: A concentrated winding coil according to the present invention comprises a plurality of coil layers each of which comprises a plurality of wire turns wound in alignment winding; and a bobbin comprising an inner flange, an outer flange and a bobbin body on which the wire is wound, wherein: each of the coil layers includes a turn shift portion where the wire is shifted from an n-th turn to an (n+1)-th turn; the turn shift portion is located only on a side of a coil end section of the coil; and the bobbin body has no guide grooves. Furthermore, a method of manufacturing the concentrated winding coil according to the present invention comprises steps of: winding the wire on the bobbin; and pressing the wire by a wire guiding/holding member toward the inner flange or toward the outer flange.

Abstract: Provided are: a method of manufacturing semiconductor device which has multilayer interconnection in a damascene structure and a conductive barrier film such as CoWP film, and which has more excellent electric characteristics than a conventional one. To this end, when a via hole reaching a lower wiring is formed, a reaction layer formed between a conductive barrier film and the lower wiring and remaining on the surface of the lower wiring is removed. Thus, at an interface where a lower surface of the via and the lower wiring are joined, the reaction layer, formed between the conductive barrier film and the lower wiring, does not exist, so that the via resistance can be sufficiently reduced.

Abstract: The stator core of a motor comprises an annular back core, and a plurality of tees created separately from the back core and secured onto the inner periphery of the back core. A stator coil is wound on each of the tees by a distributed or concentrated winding method. The stator core and stator coil are formed by molding.

Abstract: The stator core of a motor comprises an annular back core, and a plurality of tees created separately from the back core and secured onto the inner periphery of the back core. A stator coil is wound on each of the tees by a distributed or concentrated winding method. The stator core and stator coil are formed by molding.

Abstract: The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu film 209 is formed in multilayer films comprising a L-Ox™ film 203 and a SiO2 film 204. Since the L-Ox™ film 203 comprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.

Abstract: A stator of a rotating electric machine includes a stator core, and multiphase stator coils incorporated in the stator core. The stator core is formed by connecting a plurality of split core pieces. Each of the stator coils is wound around a coil bobbin installed on the outer periphery of the tooth portion of a respective one of the core pieces, by a concentrated winding method; and around mutually adjacent tooth portions, the respective coils that have the same phase and mutually different in the winding direction are continuously wound. A crossover wire for connecting the first stator coil wound around the first tooth portion and the second stator coil wound around the second tooth portion, is located at a position further toward the central side in the axial direction of the coil bobbin than the end portion of the coil bobbin, inclusive of this end portion.

Abstract: The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu film 209 is formed in multilayer films comprising a L-Ox™ film 203 and a SiO2 film 204. Since the L-Ox™ film 203 comprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.

Abstract: A semiconductor device has a first guard ring surrounding a circuit region, a second ring disposed between the circuit region and the first guard ring, and first connections connecting the first guard ring and the second guard ring to each other. An area sandwiched between the first guard ring and the second guard ring is divided by the first connections into a plurality of subareas. Even if the first guard ring is partly defective, water enters from outside into only the subarea which is contiguous to the defective part of the first guard ring.

Abstract: The stator core of a motor comprises an annular back core, and a plurality of tees created separately from the back core and secured onto the inner periphery of the back core. A stator coil is wound on each of the tees by a distributed or concentrated winding method. The stator core and stator coil are formed by molding.

Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 ?m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.

Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 ?m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.

Abstract: The tungsten sputtering target of the present invention is characterized in that a half band width of a peak corresponding to a crystal plane (110) of the target is 0.35 or less when a surface of the target to be sputtered is analyzed by X-ray diffraction. Further, the method of manufacturing the tungsten sputtering target of the present invention is characterized by comprising the steps of: pressing a high purity tungsten powder to form a pressed compact; sintering the pressed compact to form a sintered body; working the sintered body to obtain a shape of a target; subjecting the target to a grinding work of at least one of rotary grinding and polishing; and subjecting the target to a finishing work of at least one of etching and reverse sputtering.

Abstract: A semiconductor device has a first guard ring surrounding a circuit region, a second ring disposed between the circuit region and the first guard ring, and first connections connecting the first guard ring and the second guard ring to each other. An area sandwiched between the first guard ring and the second guard ring is divided by the first connections into a plurality of subareas. Even if the first guard ring is partly defective, water enters from outside into only the subarea which is contiguous to the defective part of the first guard ring.

Abstract: The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu film 209 is formed in multilayer films comprising a L-Ox™ film 203 and a SiO2 film 204. Since the L-Ox™ film 203 comprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process.

Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.

Abstract: A sputter target is made of a Ti—Al alloy containing Al in the range of 1 to 30 atm %. In the Ti—Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti—Al alloy is 500 &mgr;m or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti—Al—N film as a barrier film is formed by using the sputter target made of the Ti—Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate.

Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.