Patents by Inventor Takashi Ishigami

Takashi Ishigami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5458697
    Abstract: This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
    Type: Grant
    Filed: December 7, 1994
    Date of Patent: October 17, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takashi Ishigami, Minoru Obata, Mituo Kawai, Michio Satou, Takashi Yamanobe, Toshihiro Maki, Noriaki Yagi, Shigeru Ando
  • Patent number: 5418071
    Abstract: In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.
    Type: Grant
    Filed: February 4, 1993
    Date of Patent: May 23, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Michio Satou, Takashi Yamanobe, Takashi Ishigami, Mituo Kawai, Noriaki Yagi, Toshihiro Maki, Minoru Obata, Shigeru Ando
  • Patent number: 5204057
    Abstract: The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained.
    Type: Grant
    Filed: April 9, 1992
    Date of Patent: April 20, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takashi Ishigami, Mituo Kawai, Noriaki Yagi
  • Patent number: 5196916
    Abstract: This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.
    Type: Grant
    Filed: February 15, 1991
    Date of Patent: March 23, 1993
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takashi Ishigami, Minoru Obata, Mituo Kawai, Michio Satou, Takashi Yamanobe, Toshihiro Maki, Noriaki Yagi, Shigeru Ando
  • Patent number: 4891066
    Abstract: Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium.Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.
    Type: Grant
    Filed: July 15, 1988
    Date of Patent: January 2, 1990
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazumi Shimotori, Yoshiharu Ochi, Hideo Ishihara, Takenori Umeki, Takashi Ishigami
  • Patent number: 4793854
    Abstract: Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium.Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.
    Type: Grant
    Filed: May 20, 1987
    Date of Patent: December 27, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazumi Shimotori, Yoshiharu Ochi, Hideo Ishihara, Takenori Umeki, Takashi Ishigami
  • Patent number: 4634635
    Abstract: An ornament coated with silicon carbide having black luster which has been formed by chemical vapor deposition aided by D.C. glow discharge using hydrogen, a silicon compound and a hydrocarbon.The black ornament according to the present invention is very suitable for a case of a watch, a frame of eyeglasses and so on.
    Type: Grant
    Filed: September 27, 1984
    Date of Patent: January 6, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuhisa Shiraishi, Takashi Fujita, Yoshiharu Ochi, Masahiko Hirose, Katsutarou Ichihara, Takashi Ishigami
  • Patent number: RE34598
    Abstract: Disclosed is a highly pure titanium which comprises containing not more than 200 ppm of oxygen; not more than 30 ppm each of elements consisting of iron, nickel and chromium, and not more than 0.1 ppm each of elements consisting of sodium and potassium.Disclosed is also a process for preparing the above highly pure titanium which comprises melting a crude titanium obtained by molten salt electrolysis, in a high vacuum of 5.times.10.sup.-5 mbar or less.
    Type: Grant
    Filed: January 2, 1992
    Date of Patent: May 3, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazumi Shimotori, Yoshiharu Ochi, Hideo Ishihara, Takenori Umeki, Takashi Ishigami