Abstract: Disclosed herein is a front face erasable microcapsule magnetophoretic display sheet having a support and a solid dispersion layer provided on one surface of the support and composed of microcapsules having an average particle diameter of 50 to 650 ?m, in which a liquid dispersion, a white pigment, additives and magnetic particles are encapsulated, and a binder. The magnetic particles include at least two kinds of magnetic particles different in particle diameter from each other. An erasing magnet for front face erasing and a writing magnet for front face erasable microcapsule magnetophoretic display sheet are also disclosed.

Abstract: Disclosed herein is a front face erasable microcapsule magnetophoretic display sheet having a support and a solid dispersion layer provided on one surface of the support and composed of microcapsules having an average particle diameter of 50 to 650 ?m, in which a liquid dispersion, a white pigment, additives and magnetic particles are encapsulated, and a binder. The magnetic particles include at least two kinds of magnetic particles different in particle diameter from each other. An erasing magnet for front face erasing and a writing magnet for front face erasable microcapsule magnetophoretic display sheet are also disclosed.

Abstract: Disclosed herein is a front face erasable microcapsule magnetophoretic display sheet having a support and a solid dispersion layer provided on one surface of the support and composed of microcapsules having an average particle diameter of 50 to 650 ?m, in which a liquid dispersion, a white pigment, additives and magnetic particles are encapsulated, and a binder. The magnetic particles include at least two kinds of magnetic particles different in particle diameter from each other. An erasing magnet for front face erasing and a writing magnet for front face erasable microcapsule magnetophoretic display sheet are also disclosed.

Abstract: Method for non-invasively profiling carrier concentration in In-containing compound semiconductor wafers that enables employing the profiled wafers themselves in semiconductor device applications. The method, which using the C/V technique profiles carrier concentration in wafers including an In-containing-compound semiconductor surface layer, is characterized in non-invasively profiling carrier concentration by contacting a liquid electrode on the wafer surface, and without using photo-etching, employing an applied voltage that is up to a voltage surpassing 10V.

Abstract: An epitaxial wafer and a device having improved characteristics are obtained. The epitaxial wafer includes a substrate, a buffer layer formed on the substrate, a light-receiving layer formed on the buffer layer, and a window layer. The light-receiving layer is constituted of an epitaxial film having its lattice constant larger than that of a material of which the substrate is made. The window layer is formed on the light-receiving layer and constituted of one or a plurality of layers arranged to contact the light-receiving layer. A constituent layer of the window layer that is in contact with the light-receiving layer has its lattice constant smaller than the larger one of respective lattice constants of the light-receiving layer and the buffer layer. The window layer has a thickness of at least 0.2 ?m and at most 2.0 ?m.

Abstract: A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-x graded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsyP1-y buffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.

Abstract: A peer node according to the present invention relates to a peer node for constructing a peer-to-peer (P2P) network allowing P2P type communication. The peer node includes a unit dividing a share target file for information sharing through the P2P network into a plurality of divided files in a form where contents of each divided file makes no sense by itself; a unit distributing and arranging the plurality of divided files to and in a plurality of peer nodes including the own peer node and at least one other peer node constituting the P2P network; and a unit moving each of the divided files of distribution and arrangement between the plurality of peer nodes at a certain period of time.

Abstract: A powder compacting apparatus (1) has a top plate (3), a die plate (9) and a bottom plate (12), combined with each other as follows. The top plate (3) holds upper punches (4) in place by punch holders (5), and the die plate (9) firmly grips a die holder (8) holding dies (7). The bottom plate (12) keeps lower punches (11) in place gripped by clamps (32) so that an amount of powder fed into each die (7) is compacted to give a consolidated powder piece. The die plate (9) is composed of an upper part (9a) and a lower part (9b) so that the die holder (8) is sandwiched by and between the parts (9a, 9b), in such a manner that these parts cooperate with each other to secure each die (7) in position.

Abstract: In a provisioning control apparatus which performs provisioning of network devices in order to construct a predetermined network architecture on a network composed of the network devices, a command generator generates a network setup command for making the predetermined network architecture to be provided to the network devices, a network status analyzer acquires operation status information of the network devices determined based on the setup result, and analyzes a network architecture state based on operation status information. A provisioning controller determines the network setup command based on the analysis result and demands the command generator to generate the command.

Abstract: A monochromator comprises an optical ray input section which limits the width of optical rays input from a light source, a first concave mirror for converting the optical rays passing through the optical ray input section into parallel rays, a diffraction grating for separating the parallel rays by wavelength into diffracted rays, a second concave mirror for condensing the diffracted rays when the diffracted rays are input, an optical ray output section which limits a wavelength band width of the condensed rays, and a substrate to which the optical ray input section, the first concave mirror, the diffraction grating, the second concave mirror, and the optical ray output section are fixed. A coefficient of linear expansion of a focal length of the first concave mirror, a coefficient of linear expansion of a focal length of the second concave mirror, and a coefficient of linear expansion of a material forming the substrate in the monochromator are approximately the same.

Abstract: A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.

Abstract: An optical semiconductor device of the present invention is equipped with a photo detect element 10 comprising a photo detect part 7 provided with two photodiodes having two photodiodes having peak wavelength sensitivity in a visible light region and an infrared region, respectively and an amplifying operation processing circuit 8 for amplifying and processing outputs of the photodiodes, and characterized in that substrate resistivity R is as follows: 1≦R≦3(&OHgr;cm)

Abstract: An indium-containing wafer from which removal of mercury can be reliably performed and a method of manufacturing such a wafer are provided in order to make the mercury C-V method, allowing characteristics of a the indium-containing wafer to be measured with high precision and being a non-destructive test, viable.

Abstract: Included are a network information database for storing the statistical information collected from a router, a user request processing unit for accepting and processing a flow forwarding request from a user terminal connected to the network, a route control unit for searching for a route corresponding to the request from the user terminal by referring to the network information database, a load sharing control unit for executing such a load sharing process as to generate router setting information for sharing a transmission load of the network by referring to the network information database, and a router control unit for setting a router based on the route information determined by the route control unit and on the router setting information generated by the load sharing control unit.

Abstract: An optical semiconductor device of the present invention is equipped with a photo detect element 10 comprising a photo detect part 7 provided with two photodiodes having two photodiodes having peak wavelength sensitivity in a visible light region and an infrared region, respectively and a amplifying operation processing circuit 8 for amplifying and processing outputs of the photodiodes, and characterized in that substrate resistivity R is as follows:

Abstract: A coating material supply nozzle has a coating material reservoir where a coating material fed from the outside into a nozzle body, and an elongated nozzle port, from which the coating material passed through a nozzle passage is discharged. A coating material feed pipe for feeding the coating material is mounted in the coating material supply nozzle to extend in said coating material reservoir over the entire length. The coating material feed pipe is provided with at least one coating material feed bore for guiding the coating material within the coating material feed pipe into the coating material reservoir uniformly in a lengthwise direction of the coating material reservoir.

Abstract: An optical spectrum analyzer 100 and a wavelength variable light source 101 have each a sweep synchronization start function. A correction function of the rotation speed of a motor 106 for varying the angle of a diffraction grating in a spectroscope 104 so that extracted wavelength and output signal light wavelength match over a setup sweep wavelength range is found from the output signal light wavelength characteristic relative to the rotation angle of a spectral element 119 and the extracted wavelength of the spectroscope 104, and the rotation angle of motor 106 for driving the spectroscope 104 is varied for each setup wavelength in accordance with the correction function, then sweep is performed.

Abstract: Disclosed herein is a front face erasable microcapsule magnetophoretic display sheet having a support and a solid dispersion layer provided on one surface of the support and composed of microcapsules having an average particle diameter of 50 to 650 &mgr;m, in which a liquid dispersion, a white pigment, additives and magnetic particles are encapsulated, and a binder. The magnetic particles include at least two kinds of magnetic particles different in particle diameter from each other. An erasing magnet for front face erasing and a writing magnet for front face erasable microcapsule magnetophoretic display sheet are also disclosed.

Abstract: The present invention provides an easy-to-handle biopolymer composite ion-exchanger with high cesium selectivity, and method for manufacturing this ion-exchanger with ease and good reproducibility, and relates to a cesium separation/recovery agent comprising a composite ion-exchanger with high cesium selectivity by employing a calcium alginate gel as a matrix and loading this matrix with an inorganic ion-exchanger; and to a manufacturing method therefor.

Abstract: A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.