Abstract: According to one embodiment, an electrostatic chuck cleaner cleaning an adsorption face of an electrostatic chuck capable of attracting a reticle, and the cleaner includes: a plurality of substrates; adhesive layers provided on a major surface of each of the substrates, the adhesive layers being pressed against the adsorption face; and conductive layers provided on the major surface of each of the substrates, and the conductive layers being provided in a region other than a region where the adhesive layer being provided. The adhesive layers provided on the major surface of each of the substrates are disposed in different regions, and the entire adsorption face is pressed by the adhesive layers when the adhesive layers of the substrates are pressed against the adsorption face.

Abstract: A reflective mask comprises a substrate, first and second stacked bodies, and an intermediate portion. The first stacked body is provided on a surface of the substrate. The first stacked body includes a plurality of first layers and a plurality of second layers. A refractive index for a first electromagnetic ray of the first layer is different from a refractive index for the first electromagnetic ray of the second layer. The second stacked body includes a plurality of third layers and a plurality of fourth layers. A refractive index for the first electromagnetic ray of the third layer is different from a refractive index for the first electromagnetic ray of the fourth layer. A reflectance to the first electromagnetic ray of each of the first stacked body and the second stacked body is higher than a reflectance to the first electromagnetic ray of the intermediate portion.

Abstract: A reflective photomask includes a substrate and a reflective layer on the substrate. The reflective layer has a top surface opposite to the substrate and a reflectivity distribution on the top surface. The reflective layer includes mask patterns, the mask patterns having sizes depending on the reflectivity distribution. The mask patterns include a first pattern and a second pattern, the first pattern having a first space size smaller than a second space size of the second pattern. The first pattern is provided in a first region of the top surface, and the second pattern is provided in a second region of the top surface, wherein a reflectivity in the first region is lower than a reflectivity in the second region.

Abstract: According to one embodiment, a method of correcting defects in a reflection-type mask is provided, which comprises acquiring a mask-pattern image of the mask, by using a mask-defect correction apparatus includes a mechanism configured to detect a defect in the mask and a mechanism configured to correct the defect, acquiring a simulated wafer-transfer optical image for the mask, by using an AIMS configured to simulate a wafer-transfer optical image, thereby to determine whether the mask is defective, locating a mask defect, in a mask-pattern image acquired by the mask-defect correction apparatus, by referring to the simulated pattern image acquired by the AIMS, and correcting the defect by the mask-defect correction apparatus, on the basis of the position of the mask defect, thus detected.

Abstract: According to one embodiment, an electrostatic chuck cleaner cleaning an adsorption face of an electrostatic chuck capable of attracting a reticle, and the cleaner includes: a plurality of substrates; adhesive layers provided on a major surface of each of the substrates, the adhesive layers being pressed against the adsorption face; and conductive layers provided on the major surface of each of the substrates, and the conductive layers being provided in a region other than a region where the adhesive layer being provided. The adhesive layers provided on the major surface of each of the substrates are disposed in different regions, and the entire adsorption face is pressed by the adhesive layers when the adhesive layers of the substrates are pressed against the adsorption face.

Abstract: According to one embodiment, an exposure method comprises exposing a desired pattern on a sample by use of a first reflection type mask on which the desired pattern to be exposed on the sample is formed and a defect is partially formed, and exposing a correction pattern on the sample by use of a second reflection type mask having the correction pattern of a reflection film formed at a position corresponding to the defect of the first reflection type mask.

Abstract: According to one embodiment, a reflective exposure mask comprises a first layer formed on a substrate and including a first light absorbing part which absorbs exposure light and a light reflecting part which reflects the exposure light, and a second layer formed on the light reflecting part and including a second light absorbing part which absorbs the exposure light.

Abstract: According to one embodiment, an exposure method comprises exposing a desired pattern on a sample by use of a first reflection type mask on which the desired pattern to be exposed on the sample is formed and a defect is partially formed, and exposing a correction pattern on the sample by use of a second reflection type mask having the correction pattern of a reflection film formed at a position corresponding to the defect of the first reflection type mask.

Abstract: An electrode plate (20) for storage batteries is immersed into an aqueous solution (18) containing phosphoric acid, an ethoxy alcohol, ammonium bifluoride, sulfonic acid and sodium xylenesulfonate, and the aqueous solution (18) is stirred by a screw stirrer (22). The aqueous solution (18) is kept at about 30° C. by a heater (14), and the active material of the electrode (20) is separated therefrom. The aqueous solution (18) contains the respective solutes in the following mass ratios: 15-20 parts by mass of the phosphoric acid; 3-7 parts by mass of the ethoxy alcohol; 2-6 parts by mass of the ammonium bifluoride; 4-8 parts by mass of the sulfonic acid; and 1-3 parts by mass of the sodium xylenesulfonate.

Abstract: According to one embodiment, a method of correcting defects in a reflection-type mask is provided, which comprises acquiring a mask-pattern image of the mask, by using a mask-defect correction apparatus includes a mechanism configured to detect a defect in the mask and a mechanism configured to correct the defect, acquiring a simulated wafer-transfer optical image for the mask, by using an AIMS configured to simulate a wafer-transfer optical image, thereby to determine whether the mask is defective, locating a mask defect, in a mask-pattern image acquired by the mask-defect correction apparatus, by referring to the simulated pattern image acquired by the AIMS, and correcting the defect by the mask-defect correction apparatus, on the basis of the position of the mask defect, thus detected.

Abstract: According to one embodiment, a method for manufacturing a reflective mask includes producing a reflective mask includes a substrate, a reflection layer provided on a front surface of the substrate and configured to reflect exposure light, an absorption layer provided on the reflection layer and configured to absorb the exposure light, and a conductive layer provided on a back surface of the substrate and held on an electrostatic chuck of an exposure apparatus, transferring a mask pattern of the reflective mask to a wafer, measuring misalignment between a basic pattern of the wafer and a transfer pattern transferred to the wafer, and recessing the conductive layer within a range smaller than a thickness of the conductive layer so as to reduce the misalignment.

Abstract: A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.

Abstract: According to one embodiment, a reflective exposure mask comprises a first layer formed on a substrate and including a first light absorbing part which absorbs exposure light and a light reflecting part which reflects the exposure light, and a second layer formed on the light reflecting part and including a second light absorbing part which absorbs the exposure light.

Abstract: A reflective-type mask having a main surface including a pattern region in the main surface, the pattern region including a multilayer reflective film which reflects the exposure light and a first absorber pattern on the multilayer reflective film, the first absorber pattern including a pattern which absorbs the exposure light and corresponds to a pattern to be formed on a wafer, a light shielding region in the main surface for preventing a region on the wafer excluding a predetermined region from being irradiated with the exposure light when the main surface is irradiated with the exposure light for transferring the first absorber pattern to the predetermined region, the light shielding region including a second absorber pattern having a lower reflectivity to the exposure light than the first absorber pattern and being provided in a position differing from a position in which the first absorber pattern is provided.

Abstract: A reflective exposure mask, a method of manufacturing the reflective exposure mask, and a method of manufacturing a semiconductor device for improving yield in an EUVL (extreme-ultraviolet lithography) using a reflective exposure mask formed to a reflective exposure mask blank are provided. A reflective exposure mask for EUVL includes a low-reflectivity conductor film, a multilayer reflecting film, and an absorber formed on a mask substrate in sequence. The low-reflectivity conductor film has a reflectivity lower than reflectivities of the multilayer reflecting film and the absorber. The absorber forms an absorber pattern in a pattern region of the mask substrate. The multilayer reflecting film has a light-shielding band formed by being removed in a portion surrounding an outer periphery of the pattern region in a groove-like shape. The low-reflectivity conductor film is exposed at a bottom portion of the light-shielding band in a groove-like shape.

Abstract: A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.

Abstract: A reflective-type mask having a main surface including a pattern region in the main surface, the pattern region including a multilayer reflective film which reflects the exposure light and a first absorber pattern on the multilayer reflective film, the first absorber pattern including a pattern which absorbs the exposure light and corresponds to a pattern to be formed on a wafer, a light shielding region in the main surface for preventing a region on the wafer excluding a predetermined region from being irradiated with the exposure light when the main surface is irradiated with the exposure light for transferring the first absorber pattern to the predetermined region, the light shielding region including a second absorber pattern having a lower reflectivity to the exposure light than the first absorber pattern and being provided in a position differing from a position in which the first absorber pattern is provided.

Abstract: An electrode plate (20) for storage batteries is immersed into an aqueous solution (18) containing phosphoric acid, an ethoxy alcohol, ammonium bifluoride, sulfonic acid and sodium xylenesulfonate, and the aqueous solution (18) is stirred by a screw stirrer (22). The aqueous solution (18) is kept at about 30° C. by a heater (14), and the active material of the electrode (20) is separated therefrom. The aqueous solution (18) contains the respective solutes in the following mass ratios: 15-20 parts by mass of the phosphoric acid; 3-7 parts by mass of the ethoxy alcohol; 2-6 parts by mass of the ammonium bifluoride; 4-8 parts by mass of the sulfonic acid; and 1-3 parts by mass of the sodium xylenesulfonate.

Abstract: There is disclosed a method of producing mask inspection data, including preparing design data of a semiconductor device preparing a lithography condition relevant to a lithography process for transferring a mask pattern formed on a photo mask onto a wafer, preparing a wafer processing condition relevant to wafer processing using a pattern transferred onto the wafer, preparing a first proximity correction model for correcting proximity effect relevant to the lithography condition and the wafer processing condition, generating mask pattern data based on the design data and the first proximity correction model, and generating mask inspection data corresponding to the mask pattern data.

Abstract: This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film.