Abstract: An object of the present invention is to provide a vibration sensor in which the frequency dependence of the output is small. The present invention provides a vibration sensor 1 comprising: a support 2; an organic piezoelectric material 3 deformably disposed in or on the support 2; and an electrode 4 for extracting an electrical signal generated by deformation of the organic piezoelectric material 3, the electrode 4 being formed on the organic piezoelectric material 3, the organic piezoelectric material 3 comprising a copolymer of vinylidene fluoride and one or more monomers copolymerizable with vinylidene fluoride.

Abstract: A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ?T in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ?T?10° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.

Abstract: A silicon carbide wafer includes a base wafer that is made of silicon carbide and doped with an n-type impurity, and an epitaxial layer that is arranged on a main surface of the base wafer, made of silicon carbide and doped with an n-type impurity. The base wafer has a thickness t1 and an average impurity concentration n1, and the epitaxial layer has a thickness t2 and an average impurity concentration n2. The base wafer and the epitaxial layer are configured so as to satisfy a mathematical formula 1: ?0.0178<0.012+(t2/t1)×0.057-(n2/n1)×0.029-{(t2/t1)-0.273}×{(n2/n1)-0.685}×0.108<0.0178.

Abstract: An object is to provide a fluorine-containing polymer film. The object can be achieved by a fluorine-containing polymer film having a thermal shrinkage of 0.4% or less after being heated at 90° C. for 1 hour, and having a relative permittivity of 3 to 50 at 25° C. at 1000 Hz, or a fluorine-containing polymer film having a crystallinity of 50% or more and an elongation at break of 400% or more.

Abstract: The present invention relates to a pressure signal detection circuit and a pressure signal detection method in which a pyroelectric signal from a piezoelectric film is suppressed. More specifically, the pressure signal detection circuit receives input of an input signal from a piezoelectric film, differentiates the input signal for signal component analysis of the input signal, outputs the signal analysis value of the input signal based on the differential value, removes offset of the input signal by using the signal component analysis value, integrates the input signal, and outputs a pressure input signal value from which a heat input signal value is removed.

Abstract: The present invention addresses the problem of providing a bimorph-type piezoelectric film that is less susceptible to the influence of pyroelectric noise resulting from temperature changes, and that makes it possible to provide a pressure-sensitive sensor or the like. The present invention provides a bimorph-type piezoelectric film comprising a first pyroelectric film having piezoelectric anisotropy in an in-plane direction, and a second pyroelectric film having piezoelectric anisotropy in an in-plane direction, the first pyroelectric film and the second pyroelectric film being disposed in such a manner that their surfaces on which electric charges of the same polarity are generated by a temperature increase are each outward-facing.

Abstract: An object is to provide a piezoelectric film with good piezoelectricity. This object can be achieved by a piezoelectric film comprising a vinylidene fluoride/tetrafluoroethylene copolymer film and having a residual polarization amount of 40 mC/m2 or more.

Abstract: The present invention addresses the problem of providing a bimorph-type piezoelectric film that is less susceptible to the influence of pyroelectric noise resulting from temperature changes, and that makes it possible to provide a pressure-sensitive sensor or the like. The present invention provides a bimorph-type piezoelectric film comprising a first pyroelectric film having piezoelectric anisotropy in an in-plane direction, and a second pyroelectric film having piezoelectric anisotropy in an in-plane direction, the first pyroelectric film and the second pyroelectric film being disposed in such a manner that their surfaces on which electric charges of the same polarity are generated by a temperature increase are each outward-facing.

Abstract: The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30° C., wherein the rate of change is ?8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30° C. and a relative permittivity B at a frequency of 1 kHz at 150° C. according to the following formula: Rate of change(%)=(B?A)/A×100.

Abstract: The present invention relates to a pressure signal detection circuit and a pressure signal detection method in which a pyroelectric signal from a piezoelectric film is suppressed. More specifically, the pressure signal detection circuit receives input of an input signal from a piezoelectric film, differentiates the input signal for signal component analysis of the input signal, outputs the signal analysis value of the input signal based on the differential value, removes offset of the input signal by using the signal component analysis value, integrates the input signal, and outputs a pressure input signal value from which a heat input signal value is removed. With this structure, the present invention reduces the influence on the thermal reaction as compared with prior art, while enabling pressure signal detection at a higher speed.

Abstract: An object of the present invention is to provide a vibration sensor in which the frequency dependence of the output is small. The present invention provides a vibration sensor 1 comprising: a support 2; an organic piezoelectric material 3 deformably disposed in or on the support 2; and an electrode 4 for extracting an electrical signal generated by deformation of the organic piezoelectric material 3, the electrode 4 being formed on the organic piezoelectric material 3, the organic piezoelectric material 3 comprising a copolymer of vinylidene fluoride and one or more monomers copolymerizable with vinylidene fluoride.

Abstract: An object of the present invention is to provide a bimorph piezoelectric film that enables the production of touch panels and the like that are less influenced by pyroelectric noise due to temperature change, and exhibit high transparency. The present invention provides a bimorph piezoelectric film comprising in sequence a first piezoelectric film, a tackifier layer or an adhesive agent layer, and a second piezoelectric film, the first piezoelectric film and the second piezoelectric film being disposed in such a manner that their surfaces on which electric charges of the same polarity are generated by a temperature increase are each outward-facing, the first piezoelectric film and the second piezoelectric film each having a total light transmittance of 90% or more, and a total haze value of 8.0% or less.

Abstract: A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain region; a base region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity type semiconductor with higher concentration; a trench structure having a first gate insulation film and a first gate electrode arranged at an opening side of the trench and to be deeper than the base region, and a bottom part insulation film; a source electrode electrically connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The drain is arranged to be deeper than the base region. The first gate insulation film is made of higher dielectric insulation material than the bottom part insulation film.

Abstract: A piezoelectric wire of the present invention includes a conductive wire 11 and a polymer piezoelectric layer 12 that coats the conductive wire 11. The polymer piezoelectric layer 12 contains a ?-phase polyvinylidene fluoride-based copolymer, and the conductive wire 11 has a wire diameter of 1.0 mm or less. The ?-phase polyvinylidene fluoride-based copolymer is preferably at least one selected from a vinylidene fluoride-trifluoroethylene copolymer and a vinylidene fluoride-tetrafluoroethylene copolymer.

Abstract: A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a C-plane, and a Burgers vector including at least a component in a C-axis direction. In addition, a density of the threading dislocations having angles, each of which is formed by an orientation of the Burgers vector and an orientation of the dislocation line, larger than 0° and within 40° is set to 300 dislocations/cm2 or less. Furthermore, a density of the threading dislocations having the angles larger than 40° is set to 30 dislocations/cm2 or less.

Abstract: The bottom surface of the trench is provided so that a center part of the bottom surface protrudes upward with respect to a peripheral part of the bottom surface in a short direction. A thickness of the gate insulating film covering the peripheral part is thicker than a thickness of the gate insulating film covering the center part.

Abstract: A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type semiconductor; a base region made of the second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity semiconductor with higher concentration; a trench gate structure having upper and lower gate structures; a source electrode connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The upper gate structure is inside the trench at an upper side, and includes a first gate insulation film and a first gate electrode. The lower gate structure is inside the trench at a lower side, and includes a second gate insulation film made of higher dielectric insulation material and a second gate electrode.

Abstract: A touch panel hardly affected by pyroelectric noise due to temperature includes a first pyroelectric material and a second pyroelectric material, and is capable of detecting press pressure applied to the first pyroelectric material and/or the second pyroelectric material. The upper surface of the first pyroelectric material and the lower surface of the second pyroelectric material are surfaces on which a positive charge is generated when the temperature increases, and a negative charge is generated when the temperature decreases. The lower surface of the first pyroelectric material and the upper surface of the second pyroelectric material are surfaces on which a negative charge is generated when the temperature increases, and a positive charge is generated when the temperature decreases.

Abstract: An object of the present invention is to provide a polarized vinylidene fluoride/tetrafluoroethylene copolymer resin film that can significantly reduce, when used as an optical film, the deterioration of the quality of video or still images formed by display elements. The present invention provides a polarized vinylidene fluoride/tetrafluoroethylene copolymer resin film having 2,000 or fewer spot defects per m2, the number of spot defects being measured by a defect measurement method; the method using an surface inspection system in which a CCD camera is placed so as to detect defects at an angle of 45 degrees relative to an LED source, defects of the film are read within a rectangular range of 300 mm in a width direction (the direction perpendicular to the scanning direction), and 150 mm in a machine direction (the scanning direction), while the film is scanned under the camera at a rate of 20 m/min; wherein first, defects having a bright area of 1.5 mm2 or less and a dark area of 1.

Abstract: The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30° C., wherein the rate of change is ?8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30° C. and a relative permittivity B at a frequency of 1 kHz at 150° C. according to the following formula: Rate of change (%)=(B?A)/A×100.