Abstract: A method for producing a halide includes heat-treating a mixed material in an inert gas atmosphere, the mixed material being a mixture of M2O3, NH4X, and LiZ. The M includes at least one element selected from the group consisting of Y, a lanthanoid, and Sc. The X is at least one element selected from the group consisting of Cl, Br, I, and F. The Z is at least one element selected from the group consisting of Cl, Br, I, and F.

Abstract: A method for producing a halide includes heat-treating a mixed material in an inert gas atmosphere, the mixed material being a mixture of (NH4)aMX3+a and LiZ. The M includes at least one element selected from the group consisting of Y, a lanthanoid, and Sc. The X is at least one element selected from the group consisting of Cl, Br, I, and F. The Z is at least one element selected from the group consisting of Cl, Br, I, and F. Furthermore, 0<a?3 is satisfied.

Abstract: A production method for producing a halide includes heat-treating, in an inert gas atmosphere, a mixed material in which LiX, YZ3, and at least one of LiX? or YZ?3 are mixed, where X is an element selected from the group consisting of Cl, Br, and I; Z is an element selected from the group consisting of Cl, Br, and I and different from X; X is an element selected from the group consisting of Cl, Br, and I and different from either X or Z; and Z? is an element selected from the group consisting of Cl, Br, and I and different from either X or Z. In the heat-treatment, the mixed material is heat-treated at higher than or equal to 200° C. and lower than or equal to 650° C.

Abstract: A production method for producing a halide includes a heat-treatment step of heat-treating, in an inert gas atmosphere, a mixed material in which LiBr and YBr3 are mixed. In the heat-treatment step, the mixed material is heat-treated at higher than or equal to 200° C. and lower than or equal to 650° C.

Abstract: A production method for producing a halide includes a heat-treatment step of heat-treating, in an inert gas atmosphere, a mixed material in which LiX and YZ3 are mixed, where X is an element selected from the group consisting of Cl, Br, and I, and Z is an element selected from the group consisting of Cl, Br, and I. In the heat-treatment step, the mixed material is heat-treated at higher than or equal to 200° C. and lower than or equal to 650° C.

Abstract: An object of the present invention is to provide a curable composition that can be cured satisfactorily and can form a cured product having a high glass transition temperature as maintained and having high mechanical strength. A curable composition includes a siloxane (A), a cycloaliphatic epoxide (B), and a curing agent (C). The siloxane (A) contains at least two epoxy groups per molecule. The cycloaliphatic epoxide (B) in the curable composition is preferably a compound represented by Formula (I): wherein X is selected from a single bond and a linkage group.

Abstract: A calibration method of an infrared camera includes setting a placing table on which a substrate is placed to different temperatures and acquiring a measurement value of radiation amount of infrared light emitted from each of multiple zones provided in a top surface of the placing table by an infrared camera at each of the temperatures; calculating, as a calibration value, a difference between a measurement value of a reference zone which is one of the zones provided with a temperature sensor and a measurement value of another one of the zones at each of the temperatures; specifying an interpolation curve indicating a variation tendency of the calibration value with respect to the measurement value of the reference zone for each of the zones; and storing parameters of the interpolation curve specified for each of the zones.

Abstract: A control device of the invention for a semiconductor memory device comprising an interface conforming to JEDEC standard of DDRx-SDRAM or LPDDRx-SDRAM, comprises banks, a read/write control circuit, and a transfer control circuit. Each bank comprises subarrays. Each subarray comprises memory cells arranged along bit lines and word lines. The read/write control circuit controls reading of data from and writing of data to the semiconductor memory device. The transfer control circuit controls data transfer inside the semiconductor memory device and sets to enable an additional transfer command not specified in the JEDEC standard and a transfer command for writing data, read from a transfer source memory cell, to a transfer destination memory cell without passing outside the semiconductor memory device by transmitting a first signal value not used in the JEDEC standard to the semiconductor memory device via at least one signal line of the interface.

Abstract: An information management device includes a memory, and processing circuitry coupled to the memory and configured to convert said spatio-temporal information in storage object information into a one-dimensional bit string, split the converted one-dimensional bit string into an upper bit string and a lower bit string, and cause a storage target node to store at least the split upper bit string in a key and to store the split lower bit string and said associated data in a value of that key, and convert a range condition of spatio-temporal information of an object to be retrieved into one-dimensional bit string, split the converted one-dimensional bit string into an upper bit string and a lower bit string, retrieve a key from a search target node using at least the split upper bit string, and retrieve a value corresponding to the split lower bit string from values of the retrieved key.

Abstract: A circuit assembly includes an integrated circuit (IC) die and a first capacitor die. The IC die provides an IC and includes a plurality of first conductive pads. The first capacitor die provides a plurality of capacitors, and includes a plurality of second conductive pads at the first side and a plurality of conductive vias at the second side. At least one of the second conductive pads electrically connects to the capacitors. The conductive vias is adapted to form a plurality of external signal connections of the IC die and the first capacitor die. The IC die is stacked with the first capacitor die in such a way that the first conductive pads electrically connect to the second conductive pads, and surfaces of the IC die and the first capacitor die attaching to each other are substantially of the same size.

Abstract: A method for manufacturing a semiconductor structures is provided. The method includes forming a first hybrid bonding layer over a first wafer having a logic structure, forming a second hybrid bonding layer over a second wafer having a first capacitor structure, bonding the first wafer and the second wafer through a hybrid bonding operation to connect the first hybrid bonding layer and the second hybrid bonding layer, thereby obtaining a first bonded wafer, and the first capacitor structure is electrically connected to the logic structure through the first hybrid bonding layer and the second hybrid bonding layer, and singulating the first bonded wafer to obtain a plurality of semiconductor structures.

Abstract: A manufacturing method of a heat insulating sheet of the present disclosure includes a composite generating step of impregnating a nonwoven fiber with a basic sol prepared to generate a composite of a hydrogel-nonwoven fiber, the basic sol being prepared by adding carbonate ester to a water glass composition; and a drying step of drying a liquid contained in the composite at a temperature lower than a critical temperature of the liquid and a pressure lower than a critical pressure of the liquid to remove the liquid from the composite. A heat insulating sheet according to the present disclosure includes an aerogel and a nonwoven fiber, and has a compression rate at 0.30 MPa to 5.0 MPa of 40% or less. In an electronic device of the present disclosure, the heat insulating sheet is disposed between an electronic component and a housing. In a battery unit of the present disclosure, the heat insulating sheet is disposed between batteries.

Abstract: A semiconductor memory device is provided with a row control circuit, in order to dissolve a Row Hammer issue. The row control circuit is configured to: (A) latches one of (a) a target address upon issuing of an ACTIVE command to the semiconductor memory device, and (b) a row address of a victim cell in which data of a memory cell is affected by the target address, as a victim address by using a predetermined row address latch method; and then, (B) refreshes the victim cell having the victim address by a predetermined refresh method upon issuing of a REFRESH command.

Abstract: A resin composition comprising at least an organic resin, wherein physical property parameters specified by a storage modulus at a predetermined temperature and a glass transition temperature satisfy their respective predetermined ranges.

Abstract: An embodiment of the present invention relates to a method for producing a binder resin, from which a toner having excellent low-temperature fusing property, roller release properties, and pulverization properties, is obtained, a binder resin, and a toner for development of electrostatic images including the binder resin.

Abstract: Provided is a photosensitive resin composition that is, after being applied to an adherend surface, rapidly cured by photoirradiation to form a cured product having excellent light-shielding ability and adhesiveness (preferably, further having excellent reflow heat resistance). The photosensitive resin composition includes components (A), (C), and (D) and preferably further includes a component (B) as follows: (A) a cationically polymerizable compound at least including a compound containing an alicyclic epoxy group and devoid of ester bonds; (B) a hydroxyl-containing compound having a molecular weight of 500 or more; (C) a photo-cationic polymerization initiator; and (D) a light-shielding material.

Abstract: A calibration method of an infrared camera includes setting a placing table on which a substrate is placed to different temperatures and acquiring a measurement value of radiation amount of infrared light emitted from each of multiple zones provided in a top surface of the placing table by an infrared camera at each of the temperatures; calculating, as a calibration value, a difference between a measurement value of a reference zone which is one of the zones provided with a temperature sensor and a measurement value of another one of the zones at each of the temperatures; specifying an interpolation curve indicating a variation tendency of the calibration value with respect to the measurement value of the reference zone for each of the zones; and storing parameters of the interpolation curve specified for each of the zones.

Abstract: To provide a toner for electrophotography and a binder resin, exhibiting an excellent fog suppression capability. A toner for electrophotography and a binder resin each containing a resin A having at least a polyester moiety obtained through polycondensation of an alcohol component, a carboxylic acid component, and a polyhydroxyamine compound represented by the formula (1) in an amount of 0.01% by mass or more and 5.0% by mass or less based on the total amount of all the monomer components of the resin A.

Abstract: According to a control device of a first aspect of the invention, for a semiconductor memory device comprising an interface conforming to JEDEC (Joint Electron Device Engineering Council) standard of DDRx-SDRAM or LPDDRx-SDRAM, the control device comprises a plurality of banks, a read/write control circuit, and a transfer control circuit. The banks are connected to one another by an internal data bus, and each bank, separated from one another by at least one sense amplifier row comprising a plurality of sense amplifiers, comprises a plurality of subarrays. Each subarray comprises a plurality of memory cells arranged along a plurality of bit lines and a plurality of word lines orthogonal to the bit lines. The read/write control circuit controls reading of data from the semiconductor memory device and writing of data to the semiconductor memory device.

Abstract: Provided is a curable composition capable of giving a lens that has excellent transfer accuracy from a mold and offers heat resistance and optical properties at excellent levels. The curable composition according to the present invention for lens formation contains a cycloaliphatic epoxide (A) represented by Formula (a), a cationic-polymerization initiator (B), and a polysiloxane (C) represented by Formula (c). The curable composition contains the polysiloxane (C) in an amount of 0.01% to 5% by weight based on the total amount of the curable composition. The curable composition according to the present invention for lens formation may further contain a siloxane compound (D) containing two or more epoxy groups per molecule.