Abstract: For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

Abstract: Reflectance of a p-Si film crystallized by laser annealing is measured, a wave length dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wave length of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.

Abstract: Reflectance of a p-Si film crystallized by laser annealing is measured, a wave length dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wave length of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.

Abstract: For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

Abstract: Reflectance of a p-Si film crystallized by laser annealing is measured, a wavelength dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wavelength of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.

Abstract: A laser irradiation device generates a linear laser beam extending in one direction, which is irradiated toward the substrate 20 to be processed. The length Lh of the emitted linear laser beam in the major axis direction is adjusted in accordance with a size of the substrate 20 to be processed or the area to be processed within the substrate 20. The adjustment of the length Lh is performed by altering the distance X between a pair of cylindrical lenses 43 and 5 of the optical system for adjusting the generated laser beam in the direction corresponding to the length Lh direction of the linear laser beam, in accordance with the required length Lh. The alteration of the distance X is performed by altering the position of one of the cylindrical lenses 43 and 5 within the optical path in forward and backward direction. The lens is, for example, one having more flexibility of layout in the optical system than the other.

Abstract: A connectable plate (2) is mounted on an upper surface of a horizontal portion (the uniform thickness portion) (1b) of a housing (1). A plurality of contacts (3) mounted on the housing come into contact with a pattern of the connectable plate. A clip (4) has a U-shaped cross-sectional configuration. A spacing of a resilient forked portion of the contacts (an opening width) is larger than the thickness of the connectable plate but smaller than the sum of the thickness of the connectable plate and the thickness of the uniform thickness portion. When the clip is mounted to the connectable plate and the housing, an insulating coating portion (4d) of the clip slides onto the upper surface of the connectable plate, and a connector-housing-side end portion (4b) of the clip presses against an inclined portion (1a) of the housing. Thus, the opening width of the clip becomes larger, so that the connector-housing-side end portion slides smoothly onto the lower surface of the uniform thickness portion.

Abstract: For mounting a connector (2) to a board (1) with the use of a clip (3), a mounting apparatus (5) includes a board holder (51) for holding the board to extend in a first direction, a clip holder (53) for holding the clip to be opposite to the board in the first direction, and a connector holder (52) for holding the connector between the board and the clip. The clip holder is movable relative to the board holder in the first direction. The connector holder is movable relative to the board holder and to the clip holder in the first direction and is turnable around a predetermined axis extending in a second direction perpendicular to the first direction. The connector holder has a holder angle controlled around the predetermined axis in accordance with relative movement between the connector holder and the clip holder in the first direction.

Abstract: The body of a micromachine has a plurality of energy-power converting means for receiving different forms of energy including rays, microwaves and sound waves and converting the different forms of energy to electric power, i.e., photoelectromotive devices, a microwave-power converter and an acousto-electromotive device. The electric power obtained by these means is supplied to a drive system and an operation system incorporated in the machine body.

Abstract: Method for manufacturing concrete by mixing concrete materials including a cement, aggregate, admixture and at least one of water and ice. The aggregate is moved prior the mixing and a low-temperature liquid is sprayed on the aggregate for cooling while the aggregate is being moved.

Abstract: A method for predicting and controlling the strength development of concrete includes placing test concrete having the same composition as the subject concrete in a vessel which may be temperature regulated. The temperature inside the vessel is measured and recorded in a data memory and a data processor. The data is transmitted either in real time or from the data memory and data processor by way of a data transmission line to a temperature regulator for regulating the temperature inside the vessel. The temperature history of the test concrete can then simulate the temperature history of the reference concrete. The strength of the test concrete is measured at different times and the strength data of the test concrete is collected, processed and interpreted. A vessel for receiving the test concrete, a temperature regulator, a temperature controlling unit, a data recorder, a data transmitter and a computer are included.