Abstract: A surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas. The surface modifying apparatus includes a processing vessel; a measuring unit; and a controller. The processing vessel is configured to accommodate the substrate therein. The measuring unit is configured to measure a value indicating an amount of moisture in the processing vessel. The controller is configured to determine whether or not bonding strength between the substrate and the another substrate, when it is assumed that the substrate modified in the processing vessel is bonded to the another substrate, is good based on the value indicating the amount of moisture in the processing vessel measured by the measuring unit.

Abstract: A surface modifying method of modifying a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas includes an adjusting process and a modifying process. In the adjusting process, an amount of moisture in a processing vessel is adjusted by supplying a humidified gas into the processing vessel allowed to accommodate the substrate therein. In the modifying process, the bonding surface of the substrate is modified by forming the plasma of the processing gas in the processing vessel in a state that the amount of moisture in the processing vessel is adjusted.

Abstract: A sprinkling vehicle control system includes a travel control unit that switches a traveling direction of a sprinkling vehicle, and a sprinkling control unit that controls a first sprinkling spray provided at a first portion on one side in the traveling direction in the sprinkling vehicle. The sprinkling control unit controls the first sprinkling spray such that a sprinkling condition of the first sprinkling spray when the sprinkling vehicle travels to one side in the traveling direction is different from a sprinkling condition of the first sprinkling spray when the sprinkling vehicle travels to the other side in the traveling direction.

Abstract: A semiconductor memory device includes a first to eighth memory cell groups arranged along a first direction, a first word line extending in the first direction and a first to an eighth sense amplifier groups configured to be capable of supplying voltages to the first to the eighth memory cell groups, respectively. Each of the first to the eighth memory cell groups includes a plurality of memory cells and a plurality of bit lines each connected to the plurality of memory cells. In a write operation of supplying a program voltage to the first word line, the first sense amplifier group supplies a first voltage to the bit line connected to a write target memory cell of the first memory cell group, and the second sense amplifier group supplies a second voltage to the bit line connected to a write target memory cell of the second memory cell group.

Abstract: When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block.

Abstract: A semiconductor memory device includes a first memory pillar and a sequencer. The first memory pillar is sandwiched between a first word line and a second word line, sandwiched between a third word line and a fourth word line, sandwiched between a fifth word line and a sixth word line, includes a first memory cell facing the first word line, a second memory cell facing the second word line, a third memory cell facing the third word line, a fourth memory cell facing the fourth word line, a fifth memory cell facing the fifth word line and a sixth memory cell facing the sixth word line. The sequencer executes an erase operation on the first to sixth memory cells to enable execution of a primary write operation for the first memory cell and a primary write operation for the second memory cell at different timings.

Abstract: A memory system has a memory cell array having a plurality of strings, the plurality of strings each having a plurality of memory cells connected in series, and a controller configured to perform control of transferring charges to be stored in the plurality of memory cells in the string or transferring charges according to stored data, between potential wells of channels in the plurality of memory cells.

Abstract: An adsorption system is placed in an air passage used to supply air to a room. The adsorption system includes an adsorption section that adsorbs a target substance except water, and a reduction section that reduces accumulation of moisture in the adsorption section. An adsorbent used in the adsorption section contains a metal-organic framework. The reduction section includes a heating element that heats the adsorption section and evaporates moisture in air that has flowed into the adsorption section.

Abstract: A semiconductor memory device of embodiments includes: a substrate; a memory pillar; first to sixth conductive layers provided above the substrate; first to sixth memory cells formed between the first to sixth conductive layers and the memory pillar, respectively; and a control circuit. The control circuit applies a first voltage to the first, second, a sixth conductive layer and applies a second voltage to the third, fifth conductive layer, then applies a third voltage to the first conductive layer, applies a fourth voltage to the sixth conductive layer, and applies a fifth voltage to the second conductive layer, and then applies a sixth voltage to the first conductive layer, applies a seventh voltage to the sixth conductive layer, and applies an eighth voltage lower than the fifth voltage to the second conductive layer.

Abstract: An object is to share information of detected obstacles on a road among communication devices, using efficient communication. A communication device according to the present disclosure includes: a wireless receiving unit for receiving wireless information including first obstacle information of a first obstacle which is at least one obstacle, from outside; a first obstacle extraction unit for extracting the first obstacle information from the wireless information; a second obstacle detection unit for detecting second obstacle information of a second obstacle which is at least one obstacle present in an own surrounding area by a sensor; and an overlap information removing unit which, if there is overlap obstacle information between the first obstacle information and the second obstacle information, removes the overlap obstacle information from the second obstacle information, to generate difference obstacle information.

Abstract: A semiconductor memory device includes a semiconductor pillar including first and second memory cells electrically connected in series and formed on opposite sides of the semiconductor pillar, first word lines connected to the first memory cells, respectively, and second word lines connected to the second memory cells, respectively. A verify operation includes a channel clean operation for supplying a reference voltage to a semiconductor channel shared by the first and second memory cells followed by at least first and second sense operation for determining whether a threshold voltage of a target memory cell has reached first and second threshold voltage states, respectively, then a second channel clean operation for supplying the reference voltage to the semiconductor channel, and then at least a third sense operation for determining whether the threshold voltage of the target memory cell has reached a third threshold voltage state.

Abstract: The present disclosure relates to a landing device capable of allowing an unmanned aerial vehicle to be accommodated in a compact manner. A landing device includes a first leg portion that is swingable with a first end portion on a main body side of an unmanned aerial vehicle as an axis; and a second leg portion that is detachably attached to a second end portion of the first leg portion such that the second leg portion extends in an axial direction of the first leg portion. The present disclosure can be applied to, for example, a drone including a camera at a bottom of a main body.

Abstract: A vehicle control device executes a cruise control to let a vehicle travel in such a manner that an acceleration is equal to a predetermined acceleration, when an execution condition becomes satisfied, and starts a vehicle speed upper limit control to let the vehicle travel in such a manner that the vehicle speed does not exceed an upper limit value determined based on a shape of a curve section, when a start condition becomes satisfied. The vehicle control device starts displaying a display element in a first display mode, when the vehicle speed upper limit control is started. At a time point at which the vehicle speed upper limit control is ended, the vehicle control device starts displaying the display element in a second display mode different from the first display mode if the execution condition is not satisfied.

Abstract: A semiconductor storage device includes a plurality of memory chips and a circuit chip. The plurality of memory chips and the circuit chip are stacked on each other. Each of the plurality of memory chips has a memory cell array that includes a plurality of memory cells. The circuit chip includes a data latch configured to store page data for writing or reading data into or from the memory cell array of each of the memory chips.

Abstract: A semiconductor storage device includes a memory cell array including a plurality of memory strings, each connected between one of a plurality of bit lines and a source line and includes a first select transistor, a second select transistor, and memory cell transistors that are connected in series between the first select transistor and the second select transistor, and a plurality of word lines respectively connected to gates of the memory cell transistors in each memory string. A threshold voltage of the memory cell transistor is increased when a voltage that is applied to the word line connected to the gate thereof is lower than a voltage of a channel thereof. In the erase operation, data stored in the memory cell transistors connected to a selected one of the word lines are erased while data stored in the memory cell transistors not connected to the selected word line are not erased.

Abstract: A semiconductor storage device includes a semiconductor pillar, a first string having first memory cells connected in series, first word lines connected to the first memory cells, a second string having second memory cells connected in series, and second word lines connected to the second memory cells. Each of the first memory cells faces, and shares a channel in the semiconductor pillar with, one of the second memory cells. When reading data of the k-th first memory cell, a voltage of the first word line connected to the k-th first memory cell reaches a first voltage at a first timing, and a voltage of the second word line connected to at least one of the second memory cells other than the k-th second memory cell in the second string facing the k-th first memory cell reaches the first voltage at a second timing that is later than the first timing.

Abstract: An electric vehicle control device includes an idling-sliding control unit that provides control to reduce or prevent idling and sliding that may occur on a wheel of an electric vehicle. The idling-sliding control unit includes an idling-sliding detection unit for detecting idling or sliding that has occurred on the electric vehicle, and a torque command value generation unit that generates a torque command value used for reducing or preventing idling or sliding, based on output of the idling-sliding detection unit. When a prediction signal representing an anticipated occurrence of idling or sliding is inputted, the torque command value generation unit performs narrowing of the torque command value regardless of whether or not the idling-sliding control unit is performing idling-sliding control.

Abstract: A semiconductor memory device includes i first word lines connected to the i first memory cells, i second word lines connected to the i second memory cells, a driver capable of supplying voltage to each of the i first word lines and each of the i second word lines, and a logic control circuit controlling both a write operation including a verify operation and a read operation including a verify operation. In the semiconductor memory device, when an order of performing a sense operation for determining whether or not a threshold voltage of the k-th first memory cell has reached a j-th threshold voltage in the verify operation is different from that of in the read operation, a voltage applied to the k-th first word line in the verify operation is different from a voltage applied to the k-th first word line in the read operation.

Abstract: A memory system according to an embodiment includes a first bit line, a source line, a first word line, a second word line, a first memory pillar and a control circuit. The control circuit performs a first verify operation to first and second memory cells, a second verify operation to the first memory cell, a third verify operation to the second memory cell and a write operation or a read operation with a lower voltage in accordance with a request from an external device.

Abstract: A conventional V2X communication system relays vehicle information received from vehicles, from a base station to all vehicles in an area. Accordingly, a problem arises in that unnecessary transmission to vehicles which do not require vehicle information occurs, resulting in increase in a traffic amount in communication. According to the present disclosure, only if it is determined, based on information that is held by a vehicle or a base station and that is about an area in which direct transmission or reception is difficult, that direct transmission of vehicle information to another vehicle or reception of vehicle information transmitted from the other vehicle is difficult, the vehicle information is transmitted to the other vehicle via the base station.