Abstract: In an actuator drive control device for an active vibration isolation support system, accumulated time of eight time intervals tn of crank pulses which are outputted at every 15 degrees of a crank angle in a vibration period corresponding to 120 degrees of the crank angle, and average accumulated time shown by a straight line connecting a start point and an end point of the line of the accumulated time are calculated. Eight deviations ?tn are calculated by subtracting the average accumulated time from the accumulated time. A variation waveform of the deviations ?tn corresponds to a variation waveform of the time interval tn of the crank pulses attributable only to the engine vibration with the influence of a variation in the engine rotational speed Ne being eliminated.

Abstract: An apparatus forms a diamond film from a microwave plasma by controlling a manufacturing condition based on a spectroscopic measurement of the plasma light emission to obtain a large area of a high-quality diamond film. Using the apparatus, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave energy which is also introduced into the reactor to generate a plasma, and the light emitted from the plasma is spectroscopically measured using a spectroscope. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement. A carbon molecule vibration temperature is determined from the spectrum, and the formation condition, such as the microwave input power, the reactor pressure, or the gas flow rate, is controlled so that the determined vibration temperature falls within a specified range, especially 2000 to 2800 K.

Abstract: The present invention relates to a binding band (1) for a wire harness diverging portion, which is used for binding a diverging portion having a trunk portion (TL) formed by gathering plural wire harnesses (WH) and a branch portion (BL) branching from the trunk portion. An object of the present invention is to improve an operation efficiency wherein a band body (2) is passed through a piercing-engagement hole (7) of a lock portion (4), and a binding operation efficiency for binding a wire harness diverging portion (WD).

Abstract: New material useful in miniature, low-cost Faraday rotators, polarizers (analyzers) and magnetic substances; in Faraday rotators and optical isolators that can handle a plurality of wavelengths; and in miniaturizing, and reducing the cost and enhancing the performance of, optical isolators and various optical devices. Optical isolator (60b) as one example is configured by rectilinearly arranging a wavelength-selective Faraday rotator (30), a polarizer (20) and an analyzers (40) formed from a DLC thin film, and a magnetic substance (50) that is transparent to light. Integrally forming these using thin-film lamination technology simplifies the fabrication procedure to enable manufacturing miniature, low-cost optical isolators.

Abstract: The invention makes it possible to efficiently and accurately supply parts to a work in an assembling production line structured as a mixed assembly line, and to improve a flexibility of changing the line.

Abstract: A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

Abstract: The channel add/drop filter includes first and second 2D photonic crystals, and the first 2D photonic crystal includes a first waveguide and a first cavity, with the first cavity acting to take in light of a specific wavelength from the first waveguide and radiate it outside the first photonic crystal, and the second 2D photonic crystal includes a second waveguide with substantially the same characteristics as the first waveguide and a second cavity with substantially the same characteristics as the first cavity. The first and second waveguides are optically connected so that when the principal plane of the first 2D photonic crystal and the electric-field vector of the light within the first waveguide form an arbitrary angle □, the principal plane of the second 2D photonic crystal and the electric-field vector of the light within the second waveguide form an angle of □+(&pgr;/2).

Abstract: There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of a bonding process, wherein at least one of the insulator layers is formed with ion implanted oxygen, and a novel manufacturing process for a bonded semiconductor wafer in which an ion implantation separation process is adopted. The novel bonded semiconductor wafer is manufactured by means of a bonding process and has a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more, wherein at least one of the insulator layers is formed with ion implanted oxygen.

Abstract: A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n -or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

Abstract: The invention makes it possible to efficiently and accurately supply parts to a work in an assembling production line structured as a mixed assembly line, and to improve a flexibility of changing the line.

Abstract: The present invention relates to a binding band (1) for a wire harness diverging portion, which is used for binding a diverging portion having a trunk portion (TL) formed by gathering plural wire harnesses (WH) and a branch portion (BL) branching from the trunk portion. An object of the present invention is to improve an operation efficiency wherein a band body (2) is passed through a piercing-engagement hole (7) of a lock portion (4), and a binding operation efficiency for binding a wire harness diverging portion (WD).

Abstract: A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

Abstract: New material useful in miniature, low-cost Faraday rotators, polarizers (analyzers) and magnetic substances; in Faraday rotators and optical isolators that can handle a plurality of wavelengths; and in miniaturizing, and reducing the cost and enhancing the performance of, optical isolators and various optical devices. Optical isolator (60b) as one example is configured by rectilinearly arranging a wavelength-selective Faraday rotator (30), a polarizer (20) and an analyzers (40) formed from a DLC thin film, and a magnetic substance (50) that is transparent to light. Integrally forming these using thin-film lamination technology simplifies the fabrication procedure to enable manufacturing miniature, low-cost optical isolators.

Abstract: An apparatus forms a diamond film from a microwave plasma by controlling a manufacturing condition based on a spectroscopic measurement of the plasma light emission to obtain a large area of a high-quality diamond film. Using the apparatus, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave energy which is also introduced into the reactor to generate a plasma, and the light emitted from the plasma is spectroscopically measured using a spectroscope. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement. A carbon molecule vibration temperature is determined from the spectrum, and the formation condition, such as the microwave input power, the reactor pressure, or the gas flow rate, is controlled so that the determined vibration temperature falls within a specified range, especially 2000 to 2800 K.

Abstract: There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of a bonding process, wherein at least one of the insulator layers is formed with ion implanted oxygen, and a novel manufacturing process for a bonded semiconductor wafer in which an ion implantation separation process is adopted. The novel bonded semiconductor wafer is manufactured by means of a bonding process and has a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more, wherein at least one of the insulator layers is formed with ion implanted oxygen.

Abstract: A method and an apparatus form a diamond film from a microwave plasma by controlling a manufacturing condition based on a spectroscopic measurement of the plasma light emission to obtain a large area of a high-quality diamond film. In the method of forming a diamond film, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave energy which is also introduced into the reactor to generate a plasma, and the light emitted from the plasma is spectroscopically measured. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement. A carbon molecule vibration temperature is determined from the spectrum, and the formation pressure, or the gas flow rate is controlled so that the determined vibration temperature falls within a specified range, especially 2000 to 2800 K.

Abstract: A semiconductor material such as Si wafer with a fine structure (porous layer) formed, without using electrical current, on its surface by being contacted with a solution that contains fluoro-complex such as hexafluorotitanate.

Abstract: The MOS field-effect transistor aims to enhance the electron mobility and the hole mobility in the channel portion by employing the strained-Si/SiGe (or Si/SiGeC) structure. Crystallinity of such a heterostructure is maintained in a preferable state, shortening of the effective channel length is prevented, diffusion of Ge is prevented and the resistance of the source layer and the drain layer is reduced. The channel region has a layered structure formed by stacking the Si layer and, the SiGe or SiGeC layer in order from the surface. The source layer and the drain layer formed of SiGe or SiGeC including high concentration impurity atoms providing a desired conduction type, are in contact with both end surfaces of the channel region. The surfaces of the source layer and the drain layer have a shape rising upwardly from the bottom portion of the gate electrode.

Abstract: An electrical connection board includes a diamond substrate and an implantation metal layer constituted by the presence of metal elements in the diamond substrate. The metal layer has a thickness of at least 10 nm and a concentration of at least 1020 cm−3 in the diamond substrate. The implantation metal layer is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 1016 cm−2. Thus, a technique is provided by which a multi-layer electrical interconnection is realized in the diamond substrate having the highest thermal conductivity of all known materials.

Abstract: A SQUID includes a substrate and a superconducting current path of a patterned oxide superconductor material thin film formed on a surface of the substrate. A c-axis of an oxide crystal of the oxide superconductor material thin film is oriented in parallel to the surface of the substrate.