Abstract: A first film made of SiGe is formed over a support substrate whose surface layer is made of Si. A gate electrode is formed over a partial area of the first film, and source and drain regions are formed in the surface layer of the support substrate on both sides of the gate electrode. The gate electrode and source and drain regions constitute a first field effect transistor. A first stressor internally containing compressive strain or tensile strain is formed over the first film on both sides of the gate electrode of the first field effect transistor. The first stressor forms strain in a channel region.

Abstract: The present invention is a flame-retardant polyester film including resin layers laminated on both surfaces of a polyester film, wherein the resin layer satisfies 15?(Wc1?Wc2)/Wc0×100?99 (where Wc0 represents the weight of the resin layer, Wc1 represents the weight of the resin layer after the temperature thereof is raised from 25° C. to 600° C. in air, and Wc2 represents the weight of the resin layer after the temperature thereof is raised from 25° C. to 800° C. in air), and has a non-flammable gas generating rate of 3 to 40 percent over the range of 180° C. to 450° C. The present invention provides a flame-retardant polyester film having an excellent flame retardancy, and adhesive tapes, flexible printed circuits, a membrane switch, a film heater, and a flat cable, each including the flame-retardant polyester film.

Abstract: A hardcoat film comprises a substrate film, and a hardcoat layer laminated on at least one side of the substrate film, wherein a reflectance of the hardcoat layer at a wavelength within 400 to 600 nm has a mean ripple amplitude of 1% or less. The hardcoat film has decreased iris patterns. There is also provided an antireflection film having a low surface reflectance and a neutral tone of color, and an equipment for display including the film.

Abstract: The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.

Abstract: A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures good image quality of display screens for a long time, and it is favorable to reflecting sheets and reflectors in edge light-type and direct back light-type surface light sources for liquid crystal display screens.

Abstract: The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.

Abstract: A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures good image quality of display screens for a long time, and it is favorable to reflecting sheets and reflectors in edge light-type and direct back light-type surface light sources for liquid crystal display screens.

Abstract: A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source region, a drain region and a gate electrode are formed from silicide or other metallic materials. The metallic materials are selected so that in an n-channel MISFET, the work function Wg of the gate electrode and the work function Wg of the source region satisfy the relation of Wg<Ws, and in a p-channel MISFET, work functions of the gate electrode and the source region satisfy the relation of Wg>Ws.

Abstract: The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.

Abstract: A laminated film is provided, in which a laminated layer including at least 50 percent by weight of composition (A) and cross-linking agent (B) is laminated on at least one surface of a thermoplastic resin film, wherein the composition (A) is a composition comprising a polythiophene and a polyanion or a composition comprising a polythiophene derivative and a polyanion, and the laminated layer has a sea-island structure in which the cross-linking agent (B) is present in the composition (A). Consequently, a laminated film exhibits an unprecedentedly high level of antistatic property unaffected by changes in humidity, and has excellent transparency, water resistance, and scratch resistance.

Abstract: The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode.

Abstract: A hardcoat film comprises a substrate film, and a hardcoat layer laminated on at least one side of the substrate film, wherein a reflectance of the hardcoat layer at a wavelength within 400 to 600 nm has a mean ripple amplitude of 1% or less. The hardcoat film has decreased iris patterns. There is also provided an antireflection film having a low surface reflectance and a neutral tone of color, and an equipment for display including the film.

Abstract: Provided is a laminated polyester film, in which a laminated layer comprising two types of polyester resins having different glass transition points from each other is formed on at least one side of a base polyester film wherein the two types of polyester resins are composed of a polyester resin (A) having a glass transition point of from 60° C. to 100° C., and a polyester resin (B) having a glass transition point of from 0° C. to 60° C. and the polyester resin (B) contains a specified component, and a dicarboxylic acid component having a sulfonic acid metal base is set as a specified ratio of the entire dicarboxylic acid components in the polyester resins (A) and (B), satisfies adhesiveness to various types of coating materials which has conventionally been incompatible and, further, satisfies anti-blocking properties, transparency, scratch resistance and the other properties.

Abstract: In a semiconductor heterojunction corresponding to the n-channel and p-channel, the present invention is to enable the selective carrier injection into each channel by employing a height difference of a Schottky barrier, &phgr; B, which is provided between a source/drain consisting of metal or semiconductor-intermetallic compound and a semiconductor film used for each channel of the semiconductor.

Abstract: The present invention is a flame-retardant polyester film including resin layers laminated on both surfaces of a polyester film, wherein the resin layer satisfies 15≦(Wc1−Wc2)/Wc0×100≦99 (where Wc0 represents the weight of the resin layer, Wc1 represents the weight of the resin layer after the temperature thereof is raised from 25° C. to 600° C. in air, and Wc2 represents the weight of the resin layer after the temperature thereof is raised from 25° C. to 800° C. in air), and has a non-flammable gas generating rate of 3 to 40 percent over the range of 180° C. to 450° C. The present invention provides a flame-retardant polyester film having an excellent flame retardancy, and adhesive tapes, flexible printed circuits, a membrane switch, a film heater, and a flat cable, each including the flame-retardant polyester film.

Abstract: Provided is a laminated polyester film, in which a laminated layer comprising two types of polyester resins having different glass transition points from each other is formed on at least one side of polyester film wherein the two types of polyester resins are composed of a polyester resin (A) having a glass transition point of from 60° C. to 100° C., and a polyester resin (B) having a glass transition point of from 0° C. to 60° C. and the polyester resin (B) contains a specified component, and a dicarboxylic acid component having a sulfonic acid metal base is set as a specified ratio in entire dicarboxylic acid components in the polyester resins (A) and (B), satisfies adhesiveness to various types of coating materials which has conventionally been incompatible and, further, satisfies anti-blocking properties, transparency, scratch resistance and the other properties.

Abstract: The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.

Abstract: A laminated film for thermosensitive image transfer material, comprises a biaxially oriented polyester film including at least one surface thereof a laminated layer containing 50% by weight or more of a wax-based compound, wherein the laminated layer has island-like protrusions, wherein the island-like protrusions have stripe-like protrusions on their surfaces, and wherein a density of the island-like protrusions is 2 to 100 protrusions/100 &mgr;m2. Such laminated film for thermosensitive image transfer material has excellent hot sticking resistance even in a high energy-applied range, slidability, and printability that cannot be achieved conventionally.

Abstract: A laminated film for thermosensitive image transfer material, comprises a biaxially oriented polyester film including at least one surface thereof a laminated layer containing 50% by weight or more of a wax-based compound, wherein the laminated layer has island-like protrusions, wherein the island-like protrusions have stripe-like protrusions on their surfaces, and wherein a density of the island-like protrusions is 2 to 100 protrusions/100 &mgr;m2. Such laminated film for thermosensitive image transfer material has excellent hot sticking resistance even in a high energy-applied range, slidability, and printability that cannot be achieved conventionally.

Abstract: The present invention provides a hair-growing agent comprising, as an active ingredient, a phosphatidic acid represented by formula (I): (wherein R1 represents straight-chain alkyl having an odd number of carbon atoms, straight-chain alkenyl having an odd number of carbon atoms, or straight-chain alkynyl having an odd number of carbon atoms).