Abstract: The present invention provides a hair-growing agent comprising, as an active ingredient, a phosphatidic acid represented by formula (I): (wherein R1 represents alkyl, alkenyl, alkanoyl or alkenoyl; and when R1 represents alkyl or alkenyl, R2 represents alkyl, alkenyl, alkanoyl or alkenoyl, and when R1 represents alkanoyl or alkenoyl, R2 represents alkyl or alkenyl).

Abstract: In a semiconductor heterojunction corresponding to the n-channel and p-channel, the present invention is to enable the selective carrier injection into each channel by employing a height difference of a Schottky barrier, &phgr; B, which is provided between a source/drain consisting of metal or semiconductor-intermetallic compound and a semiconductor film used for each channel of the semiconductor.

Abstract: A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures good image quality of display screens for a long time, and it is favorable to reflecting sheets and reflectors in edge light-type and direct back light-type surface light sources for liquid crystal display screens.

Abstract: The present invention provides a hair-growing agent comprising, as an active ingredient, a phosphatidic acid represented by formula (I): 1

Abstract: The present invention provides a hair-growing agent comprising, as an active ingredient, a phosphatidic acid represented by formula (I): 1

Abstract: A laminated film containing a heat resisting resin layer which is soluble in a dipolar aprotic solvent, is laminated on a biaxially oriented thermoplastic film, wherein the biaxially oriented thermoplastic film and the heat resisting resin layer are directly adhered to each other, and the heat resisting resin is stretched at least in one direction after coating; there is no intervening adhesive layer; the resulting laminated film has excellent adhesion and flatness, and a resin laminated film having high flatness and productivity is provided.

Abstract: Provided is a process for efficiently producing N-glycyltyrosine of high purity represented by the following formula: a salt thereof, or a solvate thereof, which comprises adding dropwise to an aqueous suspension of tyrosine or a salt thereof 2 equivalents or more of a haloacetyl halide and an aqueous solution of an inorganic base simultaneously in the presence or absence of an organic solvent, and subjecting the resulting N-haloacetyltyrosine to a reaction with an ammonium ion. Also provided are N-glycyl-L-tyrosine dehydrate having the crystal structures showing specific diffraction patterns in X-ray powder diffraction and processes for producing the same which are characterized by comprising crystallizing the dihydrate from an ethanol-water mixed solvent or water.

Abstract: Disclosed is a film having a good adhesive property comprising a base film and a coated layer formed on at least one surface of the base film. The coated layer comprises a mixture whose main constituents are a polyester resin and a melamine compound, and not less than 60% by weight of constituents forming the coated layer is the polyester resin. Or the concentration of a carboxylic acid of the surface of the coated layer is not less than 0.005 and the concentration of a primary amine of the surface of the coated layer is not less than 0.0015. The film having such a coated layer can indicate an excellent adhesive property for a deposited layer under a high-moisture condition, particularly, in water, and an excellent adhesive property for a printing ink.

Abstract: A magnetoresistive head is composed of a soft magnetic layer formed on a substrate, a magnetic isolation layer formed on the soft magnetic layer, a magnetoresistive layer formed on the magnetic isolation layer, and a magnetic domain controlling magnetic layer, which is made of an anti-ferromagnetic layer or a hard ferromagnetic layer having a magnetically nonactive thickness, for covering a sense region of the magnetoresistive layer. Accordingly, because the magnetic domain controlling magnetic layer grows on the magnetoresistive layer in succession to the growth of the magnetoresistive layer, there is no probability that a natural oxide is produced in a boundary region between the magnetoresistive layer and the magnetic domain controlling magnetic layer. Also, there is no probability that a film thickness of the magnetoresistive layer placed under the magnetic domain controlling magnetic layer changes.

Abstract: A film suitable as a base of image transfer material for thermal recording or a heat-sensitive mimeograph stencil is disclosed. The laminated film of the present invention comprises a coating layer on at least one surface of a polyester film, which coating layer contains as a major component a wax-based composition and has protrusions with length/width ratios of not less than 3 at a density of not less than 20 protrusions/100 .mu.m.sup.2. The film of the present invention, when used as a base of an image transfer material for thermal recording or as a film for heat-sensitive mimeograph stencil, the running property is good, abrasion and staining of the head are very small, shedding of ink when the ink is applied does not occur, and the adhesion of the ink, clearness of printed characters, anti-sticking property, holing property and clearness of printing are excellent.

Abstract: A logic circuit comprising an inverter which includes a load element connected at its one end to a high-potential power supply, an enhancement type N-channel field-effect transistor having a Schottky gate, the transistor being connected at its drain to another end of the load element and at its source to a low-potential power supply, an input terminal, and a gate-current control unit having negative resistance characteristic, the unit being provided between the input terminal and a gate of the enhancement type N-channel field-effect transistor for controlling a gate current that flows through the enhancement type N-channel field-effect transistor.

Abstract: A polyester film comprising a polyester whose dicarboxylic acid copolymerized component contains (i) an aromatic dicarboxylic acid having a metal sulfonate and/or a derivative thereof and (ii) a polyetherdicarboxylic acid represented by the following chemical formula (a) and having a mean molecular weight in the range of 600 to 20000 and/or a derivative thereof.R.sup.1 OOCCH.sub.2 --(O--R.sup.2).sub.n --OCH.sub.2 COOR.sup.3(a)Where, "R.sup.1 " and "R.sup.3 " are alkyl groups each having a carbon number of 1 to 8, "R.sup.2 " is alkylene group having a carbon number of 2 to 8 and "n" is a positive integer. The polyester film has excellent transparency, mechanical properties and dimensional stability such as those of a PET film and an excellent water absorption property such as that of a TAC film.

Abstract: A polyester film comprising a polyester whose dicarboxylic acid copolymerized component contains (i) an aromatic dicarboxylic acid having a metal sulfonate and/or a derivative thereof and (ii) a polyetherdicarboxylic acid represented by the following chemical formula (a) and having a mean molecular weight in the range of 600 to 20000 and/or a derivative thereof.R.sup.1 OOCCH.sub.2 --(O--R.sup.2).sub.n --OCH.sub.2 COOR.sup.3 (a)Where, "R.sup.1 " and "R.sup.3 " are H or alkyl groups each having a carbon number of 1 to 8, "R.sup.2 " is alkylene group having a carbon number of 2 to 8 and "n" is a positive integer. The polyester film has excellent transparency, mechanical properties and dimensional stability such as those of a PET film and an excellent water absorption property such as that of a TAC film.

Abstract: A film for heat-sensitive mimeograph stencil and a heat-sensitive mimeograph stencil comprising a porous support and the film laminated thereon are disclosed. Since the film of the present invention has an energy of crystal fusion .DELTA.Hu of 3-11 cal/g and has a difference Tm in temperature of the crystal fusion-starting point and the crystal fusion-terminating point of 50.degree. C. to 100.degree. C., the heat sensitivity is high, so that the characters and symbols or figures can be printed clearly, and the unevenness in the thickness and the light and shade of the printed characters may substantially be eliminated. Further, since it is not necessary to make the film thin, productivity and ease of handling may be promoted.

Abstract: The present invention is directed to a polyester film comprising at least at its surface portion oriented sulfonic acid groups and/or salts thereof with an orientation degree of 5-100, which has an excellent adhesiveness, especially excellent anti-alkaline adhesiveness. The present invention also makes it possible to provide a polyester film having, in addition to the excellent adhesiveness, an excellent transparency, antistatic property and waterproof property.

Abstract: Disclosed is a surface porous film which is suited as a base film for printing such as offset printing and for ink-jet recording. The surface porous film of the present invention comprises a plastic base film; and a porous layer formed on at least one of the surfaces of said plastic base film, said porous layer having a peak pore diameter of 0.06-2.0 .mu.m and an undulation index of 0.035-0.3 .mu.m.

Abstract: An offset printing machine having a first printing unit where an ordinary offset printing is achievable and a second printing unit where a number printing and perforating operations can be performed. The second printing unit has an impression cylinder independent of an impression cylinder of the first unit. The second unit is pivotally movable in horizontal plane with respect to the first unit. When the first and second units are connected to each other, offset printing process and subsequent numbering process are achieved. When the second unit is pivotted and is disconnected from the first unit, ordinary offset printing machine can be solely performed. A chain delivery section is provided in the first unit so as to transfer the printed sheet to the second unit. Tension control means is provided for controlling tension of the chain. Further, vertical and horizontal position fixing means are provided for fixing vertical and horizontal position of the second unit relative to the first unit.

Abstract: An ohmic contact layer is provided between an n-GaAs/n-AlGaAs/undoped GaAs double-heterojunction structure and source/drain electrodes in a high electron mobility transistor. The ohmic contact layer comprises In.sub.x Ga.sub.1-x As or Ge. The ohmic contact layer has a function of considerably reducing a specific contact resistance of a barrier formed at an interface between the ohmic contact layer and the source and drain electrodes. Thereby, a nonalloyed ohmic contact is formed between the source and drain electrodes and source and drain regions formed in the undoped GaAs layer.

Abstract: A semiconductor device has an emitter potential barrier, a collector potential barrier, a base between the emitter potential barrier and the collector potential barrier, an emitter in contact, through the emitter potential barrier, with the base, and a collector in contact, through the collector potential barrier, with the base. The base has a thin base width capable of generating discrete energy levels of monority carriers therein. Carriers which are minority carriers in the base can be transferred from the emitter via the discrete energy levels in the base to the collector by resonant tunneling at an ultra-high speed.

Abstract: A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation layer suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. A channel constituted with this electron accumulation enjoys an excellent electron mobility, particularly at cryogenic temperatures. A layer configuration fabricated with two different semiconductors having different electron mobilities and a similar crystal lattice coefficient, and including a single heterojunction, is effective to improve electron mobility. Such a layer configuration can be employed for production of an active semiconductor device with high electron mobility, resulting in high switching speed. The semiconductor devices including a FET, a CCD, etc., exhibit an excellent transfer conductance Gm.