Abstract: An electronic device including: a thin-film substrate having a front surface being formed with electronic circuits; an adhesive layer comprising an adhesive material applied to a back surface of the thin-film substrate, the adhesive material having an elasticity modulus being in a range of 1.0×103 to 2.1×104 Pa at 80° C.; and a flexible substrate having a front surface being bonded to the back surface of the thin-film substrate with the adhesive layer.

Abstract: A display device includes: a flexible first substrate; a flexible second substrate provided facing the first substrate; a display part; and a wiring substrate. The display part has a display component which is disposed between the first substrate and the second substrate. The display component produces at least one of an optical characteristic change and a light emission. The wiring substrate is connected to a connection pad provided on at least one of the first substrate and the second substrate. At least a portion of the wiring substrate is interposed between the first substrate and the second substrate outside the display part.

Abstract: A display device is provide, which includes a supporting substrate, a flexible display provided with a transparent display substrate formed above the supporting substrate, and a dilatant fluid accommodating member. The dilatant fluid accommodating member is disposed on the outside of the flexible display.

Abstract: A flip-chip type semiconductor device includes a semiconductor substrate. A plurality of electrode terminals are provided and arranged on a top surface of the semiconductor substrate, a sealing resin layer is formed on the top surface of the semiconductor substrate such that the electrode terminals are completely covered with the sealing resin layer.

Abstract: In a combination of, for example, a rotor having eight magnetic poles and a stator having twelve slots and pulsating components of permeance, which generate a sinusoidal cogging torque having maxima of the same number as the number of poles of the rotor, pressurizing parts arranged in predetermined positions, applying a force at an outer periphery of the stator and directed inwardly cancels the pulsating components of the cogging torque.

Abstract: A flip-chip type semiconductor device includes a semiconductor substrate. A plurality of electrode terminals are provided and arranged on a top surface of the semiconductor substrate, a sealing resin layer is formed on the top surface of the semiconductor substrate such that the electrode terminals are completely covered with the sealing resin layer.

Abstract: A permanent magnet motor 1 includes a rotor in which permanent magnets 31 are fixed. In the rotor 20, the outer peripheral shape of rotor magnetic-pole portions 24 is formed so that, in the circumferentially central portion, the distance from the center of the rotor iron core 21 is longest, and, at the inter-polar space, the distance from the center of the rotor iron core is shortest, and so that the outermost surface of the rotor magnetic-pole portions 24 forms an arc, and given that sheath thickness tc formed by the outer-side surface of each permanent magnet 31 and the outermost surface of each rotor magnetic-pole portion 24 is practically constant, and letting the thickness of the permanent magnets be the magnet thickness tm, then the relation tc/tm?0.25 is satisfied.

Abstract: In a combination of, for example, a rotor having eight magnetic poles and a stator having twelve slots and pulsating components of permeance, which generate a sinusoidal cogging torque having maxima of the same number as the number of poles of the rotor, pressurizing parts arranged in predetermined positions applying a force at an outer periphery of the stator directed inwardly to cancel the pulsating components of the cogging torque.

Abstract: An optical transmission-path fault-detection system for detecting a fault in an optical-transmission path connecting an optical communications apparatus and an optical amplifier corresponding to the communications apparatus is disclosed.

Abstract: A rotary electric machine includes a frame; a stator whose stator-slot number Ns is 12; a rotor whose rotor-pole number Np is 8, the rotor being disposed inside the stator. The frame has a frame thickness T(?) at mechanical angle ?, with respect to a reference line that connects the inner circumferential center of the frame with an arbitrary point, other than the center, around the center that is circularly expanded in a Fourier series. The difference between the stator-slot number Ns and the rotor-pole number Np is k (=|Ns?Np|).

Abstract: In conventional semiconductor devices, an insufficient supply of the resin to the end portions of the components that should be encapsulated is caused, resulting in an insufficient permeation of the resin into gaps between the components and the substrate, causing a spreading resin-wet. A semiconductor device 1 includes a mounting interconnect substrate 10, a semiconductor chip 20 mounted on the mounting interconnect substrate 10, an underfill resin 30 provided in a gap between the mounting interconnect substrate 10 and the semiconductor chip 20 and a flow-inducing section 40 provided in vicinity of the semiconductor chip 20 on the mounting interconnect substrate 10 and being capable of inducing a flow of the underfill resin 30 to the gap.

Abstract: A rotary electric machine includes a frame; a stator whose stator-slot number Ns is 12; a rotor whose rotor-pole number Np is 8, the rotor being disposed inside the stator. The frame has a frame thickness T(?) at mechanical angle ?, with respect to a reference line that connects the inner circumferential center of the frame with an arbitrary point, other than the center, around the center that is circularly expanded in a Fourier series. The difference between the stator-slot number Ns and the rotor-pole number Np is k (=|Ns?Np|). Stress-relieving spaces are located in portions of the frame in an arrangement that does not have 90-degree mechanical angle rotational symmetry, in such a way that the sum P of inclusion ratios for the k-th component Tk and the Np-th component TNp, which are the Fourier series expansion coefficients for the frame thickness T(?) expressed by equation (2). P = ( T k + T N ? ? p ) / ? n = 0 ? ? T n × 100 ? [ % ] ( 2 ) , is less than 12%.

Abstract: An electromagnetism suppressing material has an increased electromagnetism suppressing effect, can be flexibly formed in various shapes, and is inexpensive. An electromagnetism suppressing device uses the electromagnetism suppressing material, and an electronic appliance uses the electromagnetism suppressing material or the electromagnetism suppressing device. The electromagnetism suppressing material is a liquid material and/or gel material with electrical polarity.

Abstract: A permanent magnet electric motor 10 comprises a rotor 30 provided with two stages of permanent magnets in the axial direction on an outer circumferential face of a rotor iron core, and having a shaft shifted by a stage skew angle ?r in electrical angle to decrease a first frequency component of cogging torque in the circumferential direction of the rotor iron core between two stages of the permanent magnets, a stator iron core 21 of cylindrical shape provided with the stator winding for producing a rotating magnetic field causing the rotor 30 to be rotated, and a stator 20 dividing the stator iron core 21 into plural blocks in the axial direction, and shifted by a stage skew angle ?s in electrical angle to decrease a second frequency component of the cogging torque in the circumferential direction of the stator iron core 21.

Abstract: A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.

Abstract: A highly-reliable semiconductor device and a method of fabricating the semiconductor device, while stably carrying out IC test, are proposed. A pad portion after an IC test using a probe is covered with a second passivation film. It is therefore made possible to protect the pad, which has partially been thinned by the IC test, from a chemical solution of wet etching used, after the IC test, for removing a barrier metal. This consequently makes it possible to suppress intrusion of a chemical solution through the pad portion into an IC chip. In the semiconductor device, the pad portion provided for the IC test using the probe and the opening provided for formation of the metal bump electrode are separated. It is therefore made possible to suppress any influence of the probe mark produced by the IC test exerted on the geometry of the metal bump electrode.

Abstract: A flip-chip type semiconductor device includes a semiconductor substrate. A plurality of electrode terminals are provided and arranged on a top surface of the semiconductor substrate, a sealing resin layer is formed on the top surface of the semiconductor substrate such that the electrode terminals are completely covered with the sealing resin layer.

Abstract: A flip-chip type semiconductor device includes a semiconductor substrate. A plurality of electrode terminals are provided and arranged on a top surface of the semiconductor substrate, a sealing resin layer is formed on the top surface of the semiconductor substrate such that the electrode terminals are completely covered with the sealing resin layer.

Abstract: A semiconductor device that exhibits an enhanced inhibition to a generation of voids in an underfill resin for encapsulation supplied between a semiconductor chip and an electronic component, which are mutually coupled through bump electrodes. The semiconductor device includes a first semiconductor chip and a second semiconductor chip, wherein bumps-formed surface of the first semiconductor chip is opposed to bumps-formed surface of the electronic component. The semiconductor device includes insulating films that function as protective films respectively formed on an uppermost surface of the first semiconductor chip and on an uppermost surface of the electronic component. Openings for supplying an underfill resin between the first semiconductor chip and the second semiconductor chip are provided in the vicinity of the bumps-formed regions of at least one of the insulating films.

Abstract: A permanent-magnet rotating machine includes a rotor having a rotor core carrying on a curved outer surface multiple permanent magnets arranged in two rows along an axial direction. The permanent magnets in one row are skewed from those in the other row in a circumferential direction by a row-to-row skew angle (electrical angle) ?e. A stator having a tubular stator core in which the rotor disposed, includes stator coils for producing a rotating magnetic field for rotating the rotor. A lower limit of the row-to-row skew angle ?e larger than 30 degrees (electrical angle). A ratio, of cogging torque occurring in the absence of skew to cogging torque occurring when the permanent magnets are skewed, at a row-to-row skew angle of 30 degrees is calculated based on the cogging torque ratio, the row-to-row skew angle ?e, and B-H curve properties of the stator core.