Abstract: The photoelectric conversion apparatus according to an embodiment includes a photoelectric conversion element (PD), a first transistor (Mpx) including a gate that receives a first signal from the photoelectric conversion element (PD), a second transistor (M2), and a third transistor (M3) that selectively constitutes a first differential pair constituted by the first transistor (Mpx) and the third transistor (M3) and a second differential pair constituted by the second transistor (M2) and the third transistor (M3). The photoelectric conversion apparatus outputs a second signal based on a voltage at the gate of the first transistor (Mpx) to a gate of the second transistor (M2).

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: An imaging sensor is configured to generate a signal that is obtained by amplifying one of a signal corresponding to a first accumulation period and a signal corresponding to a second accumulation period by using amplification factors having different values.

Abstract: A semiconductor device provides a plurality of circuit units arranged in parallel. Each of the plurality of circuit units includes a first signal line that transmits a first signal, which is an analog signal; a sending unit that sends a second signal; a receiving unit that receives the second signal; and a second signal line that transmits the second signal from the sending unit to the receiving unit. The distance between the first and second signal lines is shorter than the pitches at which the plurality of circuit units is arranged. The second signal is a pulse signal.

Abstract: A power supply device for outputting a DC voltage includes: a pair of positive and negative output terminals, a load to which the DC voltage is applied being connected thereto; a detection unit configured to detect a voltage value of the DC voltage output from the output terminals; a setting unit configured to select an instruction value for the DC voltage output from the output terminals from among a plurality of preset instruction values, and set the selected instruction value; and a correction unit configured to increase one of the voltage value detected by the detection unit and the instruction value set by the setting unit, according to an amount by which a current value of a current that flows through the load increases.

Abstract: An imaging sensor is configured to generate a signal that is obtained by amplifying one of a signal corresponding to a first accumulation period and a signal corresponding to a second accumulation period by using amplification factors having different values.

Abstract: The photoelectric conversion apparatus according to an embodiment includes a photoelectric conversion element (PD), a first transistor (Mpx) including a gate that receives a first signal from the photoelectric conversion element (PD), a second transistor (M2), and a third transistor (M3) that selectively constitutes a first differential pair constituted by the first transistor (Mpx) and the third transistor (M3) and a second differential pair constituted by the second transistor (M2) and the third transistor (M3). The photoelectric conversion apparatus outputs a second signal based on a voltage at the gate of the first transistor (Mpx) to a gate of the second transistor (M2).

Abstract: When a level of a signal output from a pixel is higher than a comparison level, the signal output from the pixel is converted into a digital signal during a first period by using a first reference signal. If the level of the signal output from the pixel is lower than the comparison level, the signal output from the pixel is converted into a digital signal during a second period that is longer than the first period by using a second reference signal.

Abstract: A photoelectric conversion apparatus includes a pixel. The pixel includes a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor. The photoelectric conversion apparatus includes a control line, a voltage control unit, and a current source. The control line is electrically connected to a source of the amplification transistor. The voltage control unit controls the voltage of the control line. The current source outputs a reference current. A path of a current from the amplification transistor is separated from a path of the reference current. The photoelectric conversion apparatus includes a comparison unit configured to compare the current from the amplification transistor with the reference current. During a period in which a transistor connected to the gate of the amplification transistor is in a conductive state, the selection transistor is in a non-conductive state.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: A power supply device for outputting a DC voltage includes: a pair of positive and negative output terminals, a load to which the DC voltage is applied being connected thereto; a detection unit configured to detect a voltage value of the DC voltage output from the output terminals; a setting unit configured to select an instruction value for the DC voltage output from the output terminals from among a plurality of preset instruction values, and set the selected instruction value; and a correction unit configured to increase one of the voltage value detected by the detection unit and the instruction value set by the setting unit, according to an amount by which a current value of a current that flows through the load increases.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: An imaging sensor is configured to generate a signal that is obtained by amplifying one of a signal corresponding to a first accumulation period and a signal corresponding to a second accumulation period by using amplification factors having different values.

Abstract: A photoelectric conversion device includes a photoelectric converter, a transistor having a gate to which a voltage corresponding to charges generated by the photoelectric converter is supplied, a control line connected to a first main electrode of the transistor, and a readout unit configured to read out a signal corresponding to a voltage of the gate, and a voltage controller configured to change a voltage of the control line. The readout unit generates a digital signal corresponding to the voltage of the gate, based on a current flowing through a second main electrode of the transistor during a period in which the voltage controller changes the voltage of the control line.

Abstract: A solid-state image sensor includes a pixel configured to generate a pixel signal corresponding to incident light, an amplification circuit configured to amplify the pixel signal, a setting circuit configured to set a gain of the amplification circuit based on a comparison result between a threshold and the pixel signal amplified by the amplification circuit, and a correction circuit configured to correct the pixel signal, which is amplified by a gain set by the setting circuit, by using a first correction value and a second correction value. The first correction value is a value corresponding to a gain error and the second correction value is a value corresponding to an offset of the amplification circuit in the gain.

Abstract: An imaging apparatus according to an exemplary embodiment includes pixels, reading circuits, first current sources each including a first transistor, second current sources each including a second transistor, a first control unit configured to control outputting a current from the first transistor to the reading circuit, and a second control unit configured to perform selectively supplying a voltage to a gate of the second transistor and holding a voltage at the gate of the second transistor. When the second control unit supplies the voltage to the gate of the second transistor, the second transistor supplies the reference current and the first control unit stops outputting the current from the first transistor to the reading circuit. When the second control unit holds the voltage at the gate of the second transistor, the first control unit causes the first transistor to output the current from the first transistor to the reading circuit.

Abstract: When a level of a signal output from a pixel is higher than a comparison level, the signal output from the pixel is converted into a digital signal during a first period by using a first reference signal. If the level of the signal output from the pixel is lower than the comparison level, the signal output from the pixel is converted into a digital signal during a second period that is longer than the first period by using a second reference signal.

Abstract: A semiconductor device provides a plurality of circuit units arranged in parallel. Each of the plurality of circuit units includes a first signal line that transmits a first signal, which is an analog signal; a sending unit that sends a second signal; a receiving unit that receives the second signal; and a second signal line that transmits the second signal from the sending unit to the receiving unit. The distance between the first and second signal lines is shorter than the pitches at which the plurality of circuit units is arranged. The second signal is a pulse signal.