Abstract: A DC-DC converter includes a regeneration preventing circuit to bring a synchronous rectifying switching element to an OFF-state when an output of an error amplifier is lower than a lower-limit potential of a triangular-wave signal, that is, when the output of the error amplifier deviates from a voltage range of the triangular-wave signal in a side (direction), which would cause a smaller ON duty ratio of a main switching element. This configuration prevents a rise of voltage in an input side due to a regenerative operation at startup when a pre-bias voltage exists. Also, the configuration prevents fluctuations of an output voltage at a sudden change of a load current and a drop of the output voltage at transition from a soft start state to a normal operation state when the load current is small.

Abstract: Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.

Abstract: A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

Abstract: A DC-DC converter includes an Nch FET1 which is series connected between an input terminal and an output terminal, and an Nch FET2 which is connected between the output terminal side of the Nch FET1 and a ground terminal. On the output terminal side of the circuits, a smoothing circuit and a comparator circuit are connected. The output side of the comparator circuit is connected to an on-time limiter circuit, and the on-time limiter circuit is connected to an H/S driver circuit for controlling the Nch FET1 through an inverter and directly connected to an L/S driver circuit for controlling the Nch FET2. Here, when a switching control signal for turning on the Nch FET1 is input to the on-time limiter circuit from the comparator, the on-time limiter circuit detects a time in the on state and outputs a signal by which the Nch FET1 is temporarily off controlled.

Abstract: Cost is reduced and reliability is improved with a BGA (Ball Grid Array) type semiconductor device which has ball-shaped conductive terminals. A first wiring is formed on an insulation film which is formed on a surface of a semiconductor die. A glass substrate is bonded over the surface of the semiconductor die, and a side surface and a back surface of the semiconductor die are covered with an insulation film. A second wiring is connected to a side surface or a back surface of the first wiring and extending over the back surface of the semiconductor die. A conductive terminal such as a bump is formed on the second wiring.

Abstract: A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

Abstract: A DC-DC converter includes a regeneration preventing circuit to bring a synchronous rectifying switching element to an OFF-state when an output of an error amplifier is lower than a lower-limit potential of a triangular-wave signal, that is, when the output of the error amplifier deviates from a voltage range of the triangular-wave signal in a side (direction), which would cause a smaller ON duty ratio of a main switching element. This configuration prevents a rise of voltage in an input side due to a regenerative operation at startup when a pre-bias voltage exists. Also, the configuration prevents fluctuations of an output voltage at a sudden change of a load current and a drop of the output voltage at transition from a soft start state to a normal operation state when the load current is small.

Abstract: A stacked MCM is manufactured at reduced cost without using expensive apparatus. A first wiring and a second wiring are formed on a surface of a semiconductor chip of a first semiconductor device through an insulation film. A glass substrate having an opening to expose the second wiring is bonded to the surface of the semiconductor chip on which the first wiring and the second wiring are formed. A third wiring is disposed on a back surface and a side surface of the semiconductor chip through an insulation film and connected to the first wiring. And a conductive terminal of another semiconductor device is connected to the second wiring through the opening.

Abstract: A ripple converter includes a transistor for switching an input direct-current voltage, a choke coil and a smoothing capacitor for smoothing the switched direct-current voltage, a flywheel diode for causing a current to flow through the choke coil when the transistor is turned off, and a comparing unit for controlling the ON/OFF of the transistor according to ripple in an output voltage. In the ripple converter, a waveform converter is provided on a connecting path between an output terminal and a non-inverting input terminal of a comparator in the comparing unit. A result of converting the waveform of the output voltage is compared with a reference voltage, and a result of the comparison is fed back to the transistor.

Abstract: The invention provides a package type semiconductor device and a method of manufacturing the same where reliability and yield are enhanced without making a manufacturing process complex. A resin layer and a supporting body are formed on a front surface of a semiconductor substrate formed with a pad electrode. Then, the resin layer and the supporting body are removed by etching so as to expose the pad electrode. By this etching, the supporting body in two conductive terminal formation regions facing each other over a dicing line and the supporting body in a region connecting with these regions therebetween are simultaneously removed to form an opening, as shown in FIG. 3C. Then, a metal layer is formed on the pad electrode exposed in the opening, and a conductive terminal is further formed thereon. Lastly, dicing is performed along the dicing line to separate the semiconductor substrate in individual semiconductor dies.

Abstract: The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

Abstract: This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

Abstract: A ripple converter includes a transistor for switching an input direct-current voltage, a choke coil and a smoothing capacitor for smoothing the switched direct-current voltage, a flywheel diode for causing a current to flow through the choke coil when the transistor is turned off, and a comparing unit for controlling the ON/OFF of the transistor according to ripple in an output voltage. In the ripple converter, a waveform converter is provided on a connecting path between an output terminal and a non-inverting input terminal of a comparator in the comparing unit. A result of converting the waveform of the output voltage is compared with a reference voltage, and a result of the comparison is fed back to the transistor.

Abstract: The invention is directed to improving of a yield and reliability of a BGA type semiconductor device having ball-shaped conductive terminals. A semiconductor wafer having warped portions is supported by a plurality of pins, being spaced from a heated stage. The semiconductor wafer is heated as a whole by uniformly irradiating thermal radiation thereto by using IR heaters disposed on an upper part of the semiconductor wafer and side heaters facing to lateral surfaces of the semiconductor wafer. This enables uniform reflowing of the conductive terminals provided on the semiconductor wafer, and makes each of the conductive terminals form a uniform shape.

Abstract: The invention prevents a pad electrode for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode connected to the electronic circuit, and a second pad electrode connected to the first pad electrode are formed on a semiconductor substrate. A first protection film is formed, covering the first pad electrode and having an opening on the second pad electrode only. A wiring layer is further formed, being connected to the back surface of the first pad electrode through a via hole penetrating the semiconductor substrate and extending from the via hole onto the back surface of the semiconductor substrate.

Abstract: In a converter device, an N-type FET is connected in series between an input terminal and an output terminal and an N-type FET is connected between the side of the output terminal of the N-type FET1 and a ground terminal. A smoothing circuit and a comparator circuit are connected to the side of the output terminal of the circuits. The output side of the comparator circuit is connected to an H/S driver circuit controlling the N-type FET1 through an inverter and directly connected to an L/S driver circuit controlling the N-type FET2. A reference voltage correction circuit is included in the comparator circuit, and the comparator circuit outputs an appropriate switching control signal by comparing a correction reference voltage, obtained through comparison of a divider voltage in accordance with the time average value of an output voltage with a reference voltage, with the divider voltage.

Abstract: A novel structure is provided in which mesopores are oriented. Further a mesoporous film is provided which has two-branched diffraction peaks at intervals or 180° according to in-plane X-ray diffraction.

Abstract: A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.

Abstract: The invention is directed to enhancement of performance of a back surface incident type semiconductor device having a light receiving element and a manufacturing method thereof without increasing a manufacturing cost. A supporting body is attached to a front surface of a semiconductor substrate formed with a light receiving element and its pad electrode. Then, the supporting body is etched to form a via hole penetrating the supporting body and exposing the pad electrode. Then, a wiring connected to the pad electrode and extending onto a front surface of the supporting body through the via hole is formed. Lastly, the semiconductor substrate is separated into a plurality of semiconductor dies by dicing. The semiconductor device is mounted so that the supporting body faces a circuit board.

Abstract: In a converter device, an N-type FET is connected in series between an input terminal and an output terminal and an N-type FET is connected between the side of the output terminal of the N-type FET, and a ground terminal. A smoothing circuit and a comparator circuit are connected to the side of the output terminal of the circuits. The output side of the comparator circuit is connected to an H/S driver circuit controlling the N-type FET1 through an inverter and directly connected to an L/S driver circuit controlling the N-type FET2. A reference voltage correction circuit is included in the comparator circuit, and the comparator circuit outputs an appropriate switching control signal by comparing a correction reference voltage, obtained through comparison of a divider voltage in accordance with the time average value of an output voltage with a reference voltage, with the divider voltage.