Abstract: A capacitor of a semiconductor memory of the present invention includes: a lower electrode which covers the surface of a storage node hole from the bottom to at least one of the sidewalls up to a level lower than the top surface of a second interlayer insulating film; a capacitive insulating film which covers the lower electrode; and an upper electrode which covers the capacitive insulating film.

Abstract: In a photoelectric conversion/connection device (100) including an optical element (320), a mounting board (310) on which the optical element is mounted, and an optical connector (400) which is connected to the mounting board so as to be optically connected to the optical element, the optical connector (400) is arranged on a surface (310a) opposite to a mounting surface (310b) of the mounting board (310) and the optical element (320) is exposed. The photoelectric conversion/connection device (100) includes a motherboard (210) having a main surface (210a) and an electric connector (220) to be mounted on the main surface of the motherboard. The electric connector (220) is detachably connected to the mounting board (310).

Abstract: An optical connector 1 is for connecting a connection object 10 to an optical module 21. A slider 3 is slidably held by a housing 2 adapted for positioning the connection object and the optical module. The housing has a first positioning portion for receiving the connection object. The slider has a first pressing portion 3a for elastically pressing the connection object in a first direction toward the first positioning portion and a second pressing portion 3e that elastically acts in a second direction perpendicular to the first direction.

Abstract: An object of the present invention is to restrain warpage in a thin-film trench capacitor. A thin-film capacitor includes a substrate, a dielectric film, and a pair of electrodes, and the dielectric film is provided along a concave-convex surface on which are formed a plurality of convex portions extending away from the substrate. The concave-convex surface forms a pattern having one or more divisions arranged in a plane parallel to the main plane of the substrate, and the convex portions are arranged in either parts of the divisions or other parts. At least some of the divisions have parts extending along the x axial direction, and two or more of the extending parts overlap each other and terminate at locations that are different from each other, as viewed from the y axial direction orthogonal to the x axial direction.

Abstract: The present invention includes: photoelectric conversion element 103 that converts electrical signals into optical signals and optical signals into electrical signals; and optical communication LSI 102 electrically connected to photoelectric conversion element 103. Also, the present invention includes electrical wiring substrate 101 including a plurality of electrodes 201 and 202 on which photoelectric conversion element 103 and optical communication LSI 102 are mounted by flip-chip attachment and a plurality of wiring layers 101a, 101b and 101c electrically connecting respective electrodes 201 and 202, wiring layers 101a, 101b and 101c being provided at an upper surface, a lower surface and an inner portion of electrical wiring substrate 101, respectively. Also, electrodes 201 and 202 to which photoelectric conversion element 103 is bonded are provided at a side surface of electrical wiring substrate 101.

Abstract: The invention presents a manufacturing method of an electrode for an electrochemical element for inserting and extracting a lithium ion reversibly, comprising; forming a concave portion and a convex portion at least on one side of a current collector, preparing a raw material containing a element for composing an active material, introducing a specified supply amount of the raw material and a carrier gas into a film forming device to form a plasma, and injecting the plasma of the raw material on the current collector, in which the active material is grown on the convex portion of the current collector, and a columnar body is formed by covering at least a part of respective sides of the convex portion.

Abstract: The invention presents an electrode for an electrochemical element for inserting and extracting a lithium ion reversibly, comprising a current collector forming a concave portion and a convex portion at least on one side, and a columnar body including an active material formed on the convex portion of the current collector, in which the columnar body covers at least a part of respective sides of the convex portion. By this configuration, an electrode for an electrochemical element of long life and excellent reliability is realized.

Abstract: A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.

Abstract: A non-volatile memory (1) which comprises an insulating substrate (11) having a plurality of first electrodes (15) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode (12) formed on one surface side of the substrate (11), and a recording layer (14) held between the first electrodes (15) and the second electrode (12) and variable in resistance value by electric pulses applied across the first electrodes (15) and the second electrode (12), the plurality of first electrodes (15) being electrically connected to the recording layer (14) in a region constituting a single memory cell (MC). The non-volatile memory (1) can be reduced in power consumption and has great freedom of design and high reliability.

Abstract: A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.

Abstract: A negative-electrode active material for nonaqueous electrolyte secondary battery, comprising a silicon compound capable of inserting and extracting lithium ion, wherein the silicon compound contains silicon-hydrogen bonds and the silicon-hydrogen bonds are introduced into the compound by reduction of at least one compound selected from the group consisting of silicon oxide, silicon nitride and silicon carbide with hydrogen, and a negative electrode for nonaqueous electrolyte secondary battery having a layer containing the negative-electrode active material in the above arrangement formed on a current collector.

Abstract: A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.

Abstract: A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.

Abstract: A non-volatile flip flop according to the invention comprising: a flip flop section (4) having a pair of memory nodes (5, 6) for storing a pair of inverse logic data elements; and a pair of non-volatile resistance change elements (11, 12) which are connected to the pair of memory nodes (5, 6) through switching elements (9, 10) respectively and the resistances of which vary so as to be retainable, wherein, in a store operation, the resistances of the pair of non-volatile resistance change elements (11, 12) can be varied according to the respective potentials of the pair of memory nodes (5, 6) and, in a recall operation, the pair of memory nodes (5, 6) can be placed at potentials respectively according to the difference in resistance between the pair of non-volatile resistance change elements (11, 12).

Abstract: A semiconductor device comprises a capacitor formed by sequentially stacking a lower electrode, a capacitor insulating film, and an upper electrode over a substrate. The capacitor insulating film is made of Hf oxide or Zr oxide, and between the lower electrode and the capacitor insulating film, a first barrier film is formed which is made of Hf oxide or Zr oxide containing at least either of Al and Si.

Abstract: This specification relates to a semiconductor device that comprises a semiconductor substrate 11, a source region 12 and a drain region 13, which are formed on the semiconductor substrate 11 with a channel region 14 therebetween; a floating gate electrode 152 that is formed on the channel region 14 with a gate insulator film 151 therebetween; a ferroelectric film 154 that is formed on the floating gate electrode 152; and a control gate electrode 156 that is formed on the ferroelectric film 154, wherein intermediate insulator films 153 and 155 are formed between at least one of the pairs consisting of the floating gate electrode 152 and the ferroelectric film 154, and the ferroelectric film 154 and the control gate electrode 156, and the intermediate insulator films 153 and 155 are made of hafnium oxide that contains nitrogen atoms.

Abstract: A capacitor of a semiconductor memory of the present invention includes: a lower electrode which covers the surface of a storage node hole from the bottom to at least one of the sidewalls up to a level lower than the top surface of a second interlayer insulating film; a capacitive insulating film which covers the lower electrode; and an upper electrode which covers the capacitive insulating film.

Abstract: In a method for fabricating a semiconductor device according to the present invention, a groove is formed in a second interlayer insulating film, and then a storage electrode is formed which covers bottom and side surfaces of the groove. A capacitor insulating film is formed on the storage electrode, and a CVD method at a low temperature of 400° C. or lower and annealing with ammonia are repeated to form a TiOxNy film on the capacitor insulating film. A TiN film is formed on the TiOxNy film, and the TiN film is etched using the TiOxNy film as a stopper. The exposed TiOxNy film is then removed to form a plate electrode made of the TiOxNy film and the TiN film.

Abstract: A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

Abstract: The present invention relates to a non-volatile memory comprising: a first electrode (11); a second electrode (12); and a phase-change recording medium (14) sandwiched between the first electrode (11) and the second electrode (12), in which resistance value is varied by applying an electrical pulse across the first electrode (11) and the second electrode (12), at least one of the first electrode (11) and the second electrode (12) contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium (14) is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.