Abstract: Provided is a gas barrier film having at least one surface of a substrate layer covered with a coating layer containing a first vinylidene chloride copolymer containing a carbonyl group, with an inorganic layer interposed between the substrate layer and the coating layer. The obtained gas barrier film can improve the high barrier properties against gases such as water vapor, and can improve interlayer adherence even with a laminated structure of an inorganic layer and an organic layer. An integral value of signals at from 170 to 180 ppm in a 13C-NMR spectrum of the first vinylidene chloride copolymer may be at least 0.001 times an integral value of signals at from 80 to 85 ppm. The first vinylidene chloride copolymer may further include a cyano group. The coating layer may further include a second vinylidene chloride copolymer, in a 13C-NMR spectrum of which, an integral value of signals at from 170 to 180 ppm is less than 0.001 times an integral value of signals at from 80 to 85 ppm.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.

Abstract: Disclosed are a water-repellent protective film forming agent for forming a water-repellent protective film on a silicon element-containing surface of a wafer and a water-repellent protective film forming liquid chemical in which the water-repellent protective film forming agent is dissolved in an organic solvent, characterized in that the water-repellent protective film forming agent consists of at least one kind of silicon compound selected from the group consisting of a sulfonimide derivative represented by the following general formula [1], a sulfonimide derivative represented by the following general formula [2] and a sulfonmethide derivative represented by the following general formula [3].

Abstract: To provide a water-repellent protective film-forming liquid chemical used in a process of cleaning a wafer by means of a cleaning machine whose liquid contact member contains a vinyl chloride resin. A liquid chemical is used, which includes an alkoxysilane represented by the following general formula [1]; at least one kind selected from the group consisting of a sulfonic acid represented by the following general formula [2], an anhydride of the sulfonic acid, a salt of the sulfonic acid and a sulfonic acid derivative represented by the following general formula [3]; and a diluent solvent containing at least one kind selected from the group consisting of a hydrocarbon, an ether and a thiol.

Abstract: A surface treatment was conducted by using a liquid chemical containing a water-repellent protective film forming agent represented by the following general formula [1], subsequent to a step of cleaning a metal-based wafer and prior to a step of drying the wafer. (R1 represents a C1-C18 monovalent hydrocarbon group the hydrogen elements of which may partially or entirely be replaced with a fluorine element(s). R2 mutually independently represents a monovalent organic group having a C1-C18 hydrocarbon group the hydrogen elements of which may partially or entirely be replaced with a fluorine element(s). “a” is an integer of from 0 to 2.

Abstract: A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.

Abstract: A method for cleaning a wafer that has a pattern of recessed and projected portions formed on a surface thereof and contains at least one element selected from titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a surface of a recessed portion of the pattern. The method at least includes a pre-treating step of holding a cleaning liquid at least in the recessed portion of the pattern; a protective film forming step of holding a protective film forming chemical liquid, which is a chemical liquid containing a water-repellant protective film forming agent, at least in the recessed portion of the pattern after the pre-treating step; and a drying step of removing the liquids from the pattern by drying. The cleaning liquid is acidic if the protective film forming chemical liquid is basic, or is basic if the protective film forming chemical liquid is acidic.

Abstract: Provided herein is a method for cleaning a wafer having a fine uneven surface pattern that at least partially contains a silicon element using a wafer cleaning device that includes a vinyl chloride resin as a liquid contacting member, the method including retaining a water-repellent protective film-forming chemical in at least a recessed portion of the uneven pattern to form a water-repellent protective film on a surface of the recessed portion, the water-repellent protective film-forming chemical containing: a monoalkoxysilane represented by the following general formula [1], (R1)aSi(H)3-a(OR2)??[1]; a sulfonic acid represented by the following general formula [2], R3—S(?O)2OH??[2]; and a diluting solvent, wherein the diluting solvent contains 80 to 100 mass % of alcohol with respect to the total 100 mass % of the diluting solvent.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Abstract: Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4?a?b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4?g?h?w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

Abstract: [Problem] To provide a method for preparing a protective film-forming liquid chemical, in a method for producing a wafer having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern. The liquid chemical forms a water-repellent protective film on the uneven pattern of the wafer and improves a cleaning step which tends to induce a pattern collapse, and particularly provides a good persistence (pot life) of the improving effect. [Solution] A method for preparing a liquid chemical for forming a water-repellent protective film, the liquid chemical being for forming a water-repellent protective film at the time of cleaning the wafer at least on surfaces of recessed portions of the uneven pattern, the liquid chemical containing a nonaqueous organic solvent, a silylation agent, and an acid or base.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

Abstract: A silicon wafer cleaning agent includes at least a water-based cleaning liquid, and a water-repellent cleaning liquid for providing water-repellent to an uneven pattern at least at recessed portions during a cleaning process. The water-repellent cleaning liquid is a liquid composed of a water-repellent compound containing a reactive moiety which is chemically bondable to Si in the silicon wafer, and a hydrophobic group, or is a liquid wherein 0.1 mass % or more of the water-repellent compound relative to the total quantity of 100 mass % of the water-repellent cleaning liquid and an organic solvent are mixed and contained therein. A cleaning process wherein a pattern collapse is easily induced can be improved by using the cleaning agent.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.

Abstract: A method for cleaning a wafer that has a pattern of recessed and projected portions formed on a surface thereof and contains at least one element selected from titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a surface of a recessed portion of the pattern. The method at least includes a pre-treating step of holding a cleaning liquid at least in the recessed portion of the pattern; a protective film forming step of holding a protective film forming chemical liquid, which is a chemical liquid containing a water-repellant protective film forming agent, at least in the recessed portion of the pattern after the pre-treating step; and a drying step of removing the liquids from the pattern by drying. The cleaning liquid is acidic if the protective film forming chemical liquid is basic, or is basic if the protective film forming chemical liquid is acidic.

Abstract: A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Abstract: A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.

Abstract: A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.