Abstract: The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.

Abstract: An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. AnInGaAs Player is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.

Abstract: An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.

Abstract: The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.

Abstract: An electric power generating apparatus (2) for decentralized power supply, which comprises three types of windings and three types of reactors required for deriving the maximum output that meets a wind velocity or a flow velocity to obtain a DC output, has problems that many reactors are required and the winding structure of the permanent magnet type of electric power generator (3) is complicated, so that the number of manufacture processes is large and the cost is high.

Abstract: A bearing device for internal combustion engines, comprising a crankshaft of an internal combustion engine and bearings supporting the crankshaft, and wherein the crankshaft is made of steel having not been subjected to surface hardening and having a structure, which is mainly composed of pearlite having the pro-eutectoid ferrite fraction of at most 3%, and is processed to have the surface roughness Rz of at most 0.8 ?m, and wherein the bearings have an aluminum bearing alloy bonded to a back plate thereof and contain, as an alloy component thereof, at least Si particles of less than 4 mass %, whereby early abrasion and scratches of the crankshaft are suppressed to be equivalent to or less than abrasion loss and scratches of conventional DCI shafts.

Abstract: A method manufactures a semiconductor device by forming at least an active device on a principal surface of a semiconductor substrate; etching the semiconductor substrate to thereby form a viahole adjacent to an active region where the active device is formed; and forming a plated wiring including the inner wall of the viahole and extending to an electrode of the active device on the surface of the substrate. This method uses a photo sensitive polyimide material as an etching mask in the step of forming a viahole and can thereby form a fine viahole in a high yield.

Abstract: A bearing device for internal combustion engines, comprising a crankshaft of an internal combustion engine and bearings supporting the crankshaft, and wherein the crankshaft is made of steel having not been subjected to surface hardening and having a structure, which is mainly composed of pearlite having the pro-eutectoid ferrite fraction of at most 3%, and is processed to have the surface roughness Rz of at most 0.8 &mgr;m, and wherein the bearings have an aluminum bearing alloy bonded to a back plate thereof and contain, as an alloy component thereof, at least Si particles of less than 4 mass %, whereby early abrasion and scratches of the crankshaft are suppressed to be equivalent to or less than abrasion loss and scratches of conventional DCI shafts.

Abstract: A method manufactures a semiconductor device by forming at least an active device on a principal surface of a semiconductor substrate; etching the semiconductor substrate to thereby form a viahole adjacent to an active region where the active device is formed; and forming a plated wiring including the inner wall of the viahole and extending to an electrode of the active device on the surface of the substrate. This method uses a photo sensitive polyimide material as an etching mask in the step of forming a viahole and can thereby form a fine viahole in a high yield.