Abstract: In a computer system that can configure a virtual machine being able to transit to a hibernation state data of a main memory of the virtual machine stored in an auxiliary storage device is reduced. At a point in time when the virtual machine has transitioned to a hibernation state, from consideration as to whether the data of the main memory of the virtual machine stored in the auxiliary storage device is unnecessary, data stored in the auxiliary storage device is rewritten in order to reduce the data.

Abstract: A lithium-containing composite oxide represented by the formula 1: LixNi1-y-z-v-wCoyAlzM1vM2wO2 is used as a positive electrode active material for a non-aqueous electrolyte secondary battery. The element M1 is at least one selected from the group consisting of Mn, Ti, Y, Nb, Mo, and W. The element M2 includes at least two selected from the group consisting of Mg, Ca, Sr, and Ba, and the element M2 includes at least Mg and Ca. The formula 1 satisfies 0.97?x?1.1, 0.05?y?0.35, 0.005?z?0.1, 0.0001?v?0.05, and 0.0001?w?0.05. The primary particles have a mean particle size of 0.1 ?m or more and 3 ?m or less, and the secondary particles have a mean particle size of 8 ?m or more and 20 ?m or less.

Abstract: A nonaqueous solvent for an electrical storage device according to the present invention includes fluorine-containing cyclic saturated hydrocarbon having a structure represented by the following general formula (1) in which one or two substituents R are introduced into a cyclohexane ring; a compound having a relative dielectric constant of 25 or higher; and a chain carbonate (in general formula (1), R is represented by CnX2n+1 where n is an integer of 1 or greater, at least one of (2n+1) pieces of X's is F, and the other X's are H).

Abstract: In a radio receiving apparatus, an analog received signal is converted into a digital received signal. An unwanted wave in an adjacent channel band is rejected, that is adjacent to a passband for the digital received signal. The digital received signal with no unwanted wave is converted into a first demodulated signal. The first demodulated signal is converted into a second demodulated signal in analog form. A noise component is extracted from the first demodulated signal. The second demodulated signal is suppressed under squelch control when a squelch voltage that is a voltage of the noise component after rectification and smoothing becomes equal to or higher than a predetermined threshold level.

Abstract: In one embodiment, an intracorporeal monitoring apparatus having a flection includes: a tip unit that receives an ultrasonic signal or light from inside a subject and converts the ultrasonic signal or light into an electric signal; a guiding unit that transmits the electric signal obtained by the tip unit; and a flection that is provided between the guiding unit and the tip unit, transmits the electric signal obtained by the tip unit to the guiding unit, and can be bent, the flection has a conductor that is curved and extensible, one or a plurality of layers of conductive tubes coating the conductor, and a layer of an insulating tube coating the conductive tubes.

Abstract: A field effect transistor (FET) with high withstand voltage and high performance is realized by designing a buffer layer structure appropriately to reduce a leakage current to 1×10?9 A or less when a low voltage is applied. An epitaxial wafer for a field effect transistor comprising a buffer layer 2, an active layer, and a contact layer on a semi-insulating substrate 1 from the bottom, and the buffer layer 2 includes a plurality of layers, and a p-type buffer layer composed of p-type AlxGa1-xAs (0.3?x?1) is provided as a bottom layer (undermost layer) 2a. A Nd product of a film thickness of the p-type buffer layer and a p-type carrier concentration of the p-type buffer layer is within a range from 1×1010 to 1×1012/cm2.

Abstract: In an ultrasound probe including first and second acoustic matching layers between an acoustic lens and a piezoelectric oscillator, an electrode is arranged on a surface of a laminate element made of the first and second acoustic matching layers, the laminate element is interposed between the acoustic lens and the piezoelectric oscillator, and the piezoelectric oscillator and the electrode are electrically connected.

Abstract: Bandwidth control over users accommodated under ONU in PON is achieved. BAS sets user bandwidth information obtained during user authorization in OLT. The OLT achieves bandwidth control on a user basis, using bandwidth information set from the BAS. The present invention enables bandwidth control over users under the ONUs.

Abstract: An epitaxial wafer for a semiconductor light emitting device according to the present invention in which at least an n-type cladding layer formed with a mixed crystal made of an AlGaInP material, an active layer, a p-type Mg-doped cladding layer, and a p-type contact layer are stacked successively in that order on an n-type GaAs substrate, and the p-type contact layer is formed as at least two layers that are an Mg-doped contact layer and a Zn-doped contact layer stacked thereon when viewed from the n-type GaAs substrate, comprises a Zn-doped layer which is inserted between the p-type Mg-doped cladding layer and the p-type contact layer.

Abstract: Bandwidth control over users accommodated under ONU in PON is achieved. BAS sets user bandwidth information obtained during user authorization in OLT. The OLT achieves bandwidth control on a user basis, using bandwidth information set from the BAS. The present invention enables bandwidth control over users under the ONUs.

Abstract: A nonaqueous electrolyte secondary battery according to the present invention includes a positive electrode and a negative electrode which are capable of reversibly occluding and releasing lithium; a resin layer provided between the positive electrode and the negative electrode; a battery case accommodating the positive electrode, the negative electrode and the resin layer; a nonaqueous electrolyte solution filling the battery case; and an insulating layer interposed, at least partially, between the positive electrode and the resin layer, the insulating layer containing aluminum fluoride.

Abstract: A non-aqueous electrolyte secondary battery including a positive electrode, a negative electrode, a separator interposed between the positive electrode and the negative electrode, and an electrolyte, wherein the positive electrode comprises a positive electrode active material comprising a particle of a composite oxide represented by a general formula: LixMe1-y-zMyLzO2. In the general formula, the element Me is at least one transition metal element except Ti, Mn, Y and Zr, the element M is at least one selected from the group consisting of Mg, Ti, Mn and Zn, and the element L is at least one selected from the group consisting of Al, Ca, Ba, Sr, Y and Zr, and 1?x?1.05, 0.005?y?0.1 (with a proviso that 0.005?y?0.5 is satisfied in the case of the element M being Mn) and 0?z?0.05 are satisfied.

Abstract: An ultrasound diagnostic apparatus including an ultrasonic probe transmitting and receiving ultrasound toward and from a subject, a puncture adaptor configured to be fixed to the ultrasonic probe and to hold a puncture needle, wherein the puncture adaptor has moving part movable in relation to the ultrasonic probe with the puncture needle, and a sensor provided at the ultrasonic probe, and configured to detect the position of the moving part. As the puncture needle is moved relative to the probe, the movable part is correspondingly moved relative to the probe, and movement of the movable part, and therefore also of the puncture needle, is detected by the sensor.

Abstract: A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.

Abstract: Disclosed is a non-aqueous electrolyte secondary battery having an electrode group in which a positive electrode and a negative electrode are spirally wound with a separator interposed therebetween. The positive electrode contains a positive electrode active material and a binder. The positive electrode active material contains a mixture of two different particulate substances having different average particle sizes. The two different particulate substances are lithium composite metal oxides containing nickel as an essential element. The binder includes fluorocarbon resin and rubber particles. The fluorocarbon resin contains at least a vinylidene fluoride unit. The amount of the rubber particles per 100 parts by weight of the fluorocarbon resin is 1 to 25 parts by weight.

Abstract: A sound reproduction system includes an electro-acoustic transducer and a transducer driver for driving the electro-acoustic transducer. The transducer drive includes a filter which is configured to reproduce at a listener's location an approximation to the local sound field that would be present at the listener's ears in recording space, taking into account the characteristics and intended position of the electro-acoustic transducer relative to the listener's ears. The electro-acoustic transducer includes a first sound emitter which provides an intermediate sound emission channel, and second and third sound emitters providing respective left and right sound emission channels. The first sound emitter is located intermediate of second and third sound emitters. Higher frequencies from at least one of the second and third sound emitters are transmitted closer to the first sound emitter while lower frequencies are transmitted away from the first sound emitter.

Abstract: An ultrasonic probe including a piezoelectric vibrator configured to transmit and receive ultrasonic waves, an acoustic lens configured to focus the ultrasonic waves and an acoustic matching layer arranged between the piezoelectric vibrator and the acoustic lens and configured to modify acoustic impedance from the piezoelectric vibrator to the acoustic lens. The acoustic matching layer includes a first region arranged at center areas along a direction of transmitting and receiving of the ultrasonic waves, a second region arranged between the first region and the piezoelectric vibrator and having a rate of change of acoustic impedance which is less than rate of change of acoustic impedance of the first region and a third region arranged between the first region and the acoustic lens, and having a rate of change of acoustic impedance which is less than a rate of change of acoustic impedance of the first region.

Abstract: An ultrasonic probe is provided which includes a piezoelectric vibrator having an earth electrode and a signal electrode on a rear surface, an acoustic matching layer disposed on a front surface side of the piezoelectric vibrator, a packing material disposed on the rear surface of the piezoelectric vibrator, and a flexible printed circuit that is interposed between the piezoelectric vibrator and the packing material to cover the entire rear surface of the piezoelectric vibrator and has an earth wiring layer and a signal wiring layer. The earth wiring layer and the signal wiring layer are exposed from a surface facing the piezoelectric vibrator of the flexible printed circuit so as to be electrically connected to the earth electrode and the signal electrode through an exposed surface of the earth wiring layer and an exposed surface of the signal wiring layer, respectively.

Abstract: Generation of dislocation and increase of diffusion resistance at edge portions of source/drain regions in a CMIS are prevented. When source/drain regions in a CMIS are formed, argon is implanted to a P-well layer as a dislocation-suppressing element and nitrogen is implanted to an N-well layer as a dislocation-suppressing element before an ion implantation of impurities to a silicon substrate. In this manner, by separately implanting dislocation-suppressing elements suitable for each of the P-well layer and the N-well layer as well as suppressing the generation of dislocation, increase of diffusion resistance can be suppressed, yield can be improved, and the reliability of devices can be increased.

Abstract: A cast web formed on a support in a casting process is peeled off the support by a first roller in a peeling and conveying process. As being peeled by the first roller, the cast web forms a film, and conveyed through a second roller to a tenter drying process. The peeling and conveying process has a length from a peeling position to a holding position of the film by clips. The length is set to be 10% to 80% of the width of the cast web. The first and second rollers are concave rollers. A couple of blowers are disposed at the end of the peeling and conveying process, to blow the lateral sides of the film in laterally outward directions of the film, to stretch curls in the lateral sides of the film.