Abstract: In one embodiment, a liquid discharge head includes, a circuit board including a drive IC, and a circulation flow path including a supply flow path that communicates with a liquid discharge unit that discharges liquid, and a collection flow path that is provided in a manner so that heat is transmittable to the circuit board, the collection flow path that communicates with the liquid discharge unit.

Abstract: A semiconductor module according to an embodiment has first and second wiring portions, first semiconductor devices and second semiconductor devices. The second wiring portion is provided to oppose the first wiring portion. The third wiring portion is provided to oppose the first wiring portion. The first semiconductor devices are provided between the first wiring portion and the second wiring portion. Each of the first semiconductor devices has a first switching element, and an input terminal or an output terminal of the first switching element is electrically connected with the first wiring portion. The second semiconductor devices are provided between the first wiring portion and the third wiring portion. Each of the second semiconductor devices has a second switching element, and an output or input terminal of the second switching element is electrically connected with the first wiring portion in a manner contrary to the first switching element.

Abstract: According to one embodiment, a semiconductor power converter includes first and second electrical conductors opposed to each other, first and second semiconductor elements joined to a first joint surface of the first electrical conductor, first and second convex electrical conductors joined to the first and second semiconductor elements, a junction joined to the first and second convex electrical conductors and a second joint surface of the second electrical conductor, power terminals, signal terminals, and an envelope sealing the constituent members. The envelope includes a flat bottom surface which extends perpendicular to the semiconductor elements and in which first and second bottom surfaces of the electrical conductors are exposed.

Abstract: According to one embodiment, a first semiconductor element has a first electrode connected to the first conductor, a second electrode connected to the second conductor, and a control electrode connected to a first signal terminal. A second semiconductor element has a first electrode connected to the first conductor, and a second electrode connected to the second conductor. A third semiconductor element has a first electrode connected to the third conductor, a second electrode connected to the fourth conductor, and a control electrode connected to a second signal terminal. A fourth semiconductor element has a first electrode connected to the third conductor, and a second electrode connected to the fourth conductor.

Abstract: According to one embodiment, a semiconductor device includes a first electrical conductor, a second electrical conductor, first and second semiconductors between the first and second electrical conductors, a first power terminal, a second power terminal, a signal terminal, and an insulator which covers the components. The insulator includes a flat bottom surface in which the first and second electrical conductors are exposed, a ceiling surface, a first end surface, and a second end surface. The power terminals and the signal terminal extend outwardly from the first and second end surfaces, and the ceiling surface, respectively. The first end surface, the ceiling surface, and the second end surface are formed with a parting line.

Abstract: According to one embodiment, a semiconductor device includes a first electrical conductor, a second electrical conductor, first and second semiconductors between the first and second electrical conductors, a first power terminal, a second power terminal, a signal terminal, and an insulator which covers the components. The insulator includes a flat bottom surface in which the first and second electrical conductors are exposed, a ceiling surface, a first end surface, and a second end surface. The power terminals and the signal terminal extend outwardly from the first and second end surfaces, and the ceiling surface, respectively. The first end surface, the ceiling surface, and the second end surface are formed with a parting line.

Abstract: According to one embodiment, a semiconductor power converter includes first and second electrical conductors opposed to each other, first and second semiconductor elements joined to a first joint surface of the first electrical conductor, first and second convex electrical conductors joined to the first and second semiconductor elements, a junction joined to the first and second convex electrical conductors and a second joint surface of the second electrical conductor, power terminals, signal terminals, and an envelope sealing the constituent members. The envelope includes a flat bottom surface which extends perpendicular to the semiconductor elements and in which first and second bottom surfaces of the electrical conductors are exposed.

Abstract: An electronic component in which an element is formed on a chip includes: a pad that is made of a conductive material and that is formed in a first bump formation region that is two-dimensionally arranged in center of one principle face and in a second bump formation region that is linearly arranged at peripheral border of the principle face; a passivation film that is formed on the principle face to cover portion except a formation position of the pad; a metal layer that is formed on the pad; and a bump that is made of a conductive material and that is formed on the metal layer by plating, wherein radius of the metal layer in the second bump formation region is smaller than radius of at least some of the metal layer in the first bump formation region.

Abstract: An aspect of one embodiment, there is provided an ultrasonic transducer including a plurality of oscillators, each of the oscillator having a convex portion, a printed wiring board provided to be opposed to the convex portion and electrically connected to the convex portion, a resin provided between the oscillator and the printed wiring board, the resin covering at least the convex portion and a portion of the printed wiring board.

Abstract: An aspect of one embodiment, there is provided an ultrasonic transducer including a plurality of oscillators, each of the oscillator having a convex portion, a printed wiring board provided to be opposed to the convex portion, an adhesive material including at least a portion of the convex portion, the adhesive material joining the oscillator and the printed wiring board, and a resin provided between the oscillator and the printed wiring board, the resin covering the convex portion and the adhesive material.

Abstract: According to one embodiment, a semiconductor apparatus includes a semiconductor device, a heat spreader, a regulating unit, a containing unit, and a holding unit. The heat spreader is bonded to the semiconductor device with an interposed solder layer. The regulating unit is configured to regulate a dimension between the semiconductor device and the heat spreader. The containing unit is configured to contain melted solder in an interior of the containing unit. The holding unit is configured to allow melted solder held in an interior of the holding unit. The holding unit is configured to replenish the melted solder in the case where an amount of the melted solder contained in the containing unit is insufficient. The holding unit is configured to recover the melted solder in the case where the amount of the melted solder contained in the containing unit is excessive.

Abstract: An ultrasonic probe includes, a transducer, a substrate includes electrodes formed on a front surface and a back surface and electronic components, first flexible wire substrates connected in such a manner that a first end is connected to the transducer and a second end is connected to a electrode at a side of the front surface of the substrate, second flexible wire substrates connected in such a manner that a first end is connected to the transducer and a second end is connected to a electrode at a side of the back surface of the substrate, and a dummy materials including the same rigidity and thickness as those of the first flexible wire substrate is arranged at a space, adjacent to a electrode at the side of the front surface of the substrate, corresponding to the second end of the second flexible wire substrate.

Abstract: A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow.

Abstract: According to one embodiment, between the mounting substrate and the semiconductor chip, there is a joint support layer including a metal or its alloy selected from the group of Cu, Al, Ag, Ni, Cr, Zr and Ti and a melt layer laminated across the joint support layer, and formed of a metal selected from the group of Sn, Zn and In or of an alloy of at least two metals selected from the same metals. The process of joining the mounting substrate and the semiconductor chip includes intervening a joining layer which is formed, at least for its outermost layer, by the melt layer, maintaining the temperature to be higher than the melting point of the melt layer, then forming an alloy layer which has a higher melting point than the melt layer by liquid phase diffusion.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device attained as follows. A dielectric layer having a first opening and a second opening reaching an electrode terminal is formed by modifying a photosensitive resin film on a substrate on which the electrode terminal of a first conductive layer is provided. Next, a second conductive layer that is electrically connected to the electrode terminal is formed on the dielectric layer that includes inside of the first opening, and a third conductive layer that has an oxidation-reduction potential of which difference from the oxidation-reduction potential of the first conductive layer is smaller than a difference of the oxidation-reduction potential between the first conductive layer and the second conductive layer is formed on the second conductive layer.

Abstract: An ultrasonic probe includes, a transducer, a substrate includes electrodes formed on a front surface and a back surface and electronic components, first flexible wire substrates connected in such a manner that a first end is connected to the transducer and a second end is connected to a electrode at a side of the front surface of the substrate, second flexible wire substrates connected in such a manner that a first end is connected to the transducer and a second end is connected to a electrode at a side of the back surface of the substrate, and a dummy materials including the same rigidity and thickness as those of the first flexible wire substrate is arranged at a space, adjacent to a electrode at the side of the front surface of the substrate, corresponding to the second end of the second flexible wire substrate.

Abstract: According to one embodiment, a semiconductor apparatus includes a semiconductor device, a heat spreader, a regulating unit, a containing unit, and a holding unit. The heat spreader is bonded to the semiconductor device with an interposed solder layer. The regulating unit is configured to regulate a dimension between the semiconductor device and the heat spreader. The containing unit is configured to contain melted solder in an interior of the containing unit. The holding unit is configured to allow melted solder held in an interior of the holding unit. The holding unit is configured to replenish the melted solder in the case where an amount of the melted solder contained in the containing unit is insufficient. The holding unit is configured to recover the melted solder in the case where the amount of the melted solder contained in the containing unit is excessive.

Abstract: A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow.

Abstract: An aspect of one embodiment, there is provided an ultrasonic transducer including a plurality of oscillators, each of the oscillator having a convex portion, a printed wiring board provided to be opposed to the convex portion, an adhesive material including at least a portion of the convex portion, the adhesive material joining the oscillator and the printed wiring board, and a resin provided between the oscillator and the printed wiring board, the resin covering the convex portion and the adhesive material.

Abstract: A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow.