Abstract: A semiconductor device includes a semiconductor chip in a rectangular shape having longer sides extending in a first direction and shorter sides extending in a second direction. The semiconductor chip includes: a first vertical MOS transistor that includes a first gate pad and a plurality of first source pads, and a second vertical MOS transistor that includes a second gate pad and a plurality of second source pads. A plurality of first linear disposition regions in each of which source pads are linearly aligned in the first direction and a plurality of second linear disposition regions in each of which source pads are linearly aligned in the second direction are provided on an upper surface of the semiconductor chip. The semiconductor device further includes a plurality of ball-shaped bump electrodes connected to the first gate pad, the first source pads, the second gate pad, and the second source pads.

Abstract: A power amplifier semiconductor device includes: a substrate; a semiconductor layer provided on the surface of the substrate and including a plurality of unit HEMTs; a connection layer provided on the semiconductor layer and including a source electrode, a drain electrode, and a gate electrode of each of the plurality of unit HEMTs; a terminal layer provided on the connection layer; a back electrode which is provided on the bottom surface of the substrate and whose potential is set to a source potential; and substrate vias that pass through the substrate and have a shield wiring layer on inner walls of the substrate vias. In plan view, either one of the drain aggregation portion or the gate aggregation portion is or both of the drain aggregation portion and the gate aggregation portion are each surrounded by the substrate vias.

Abstract: A semiconductor module includes: a semiconductor element; a wiring substrate on which the semiconductor element is mounted; a heat dissipation substrate; a first metal material that bonds the wiring substrate and the heat dissipation substrate; and a second metal material that bonds the wiring substrate and the heat dissipation substrate and has a different melting point from the first metal material. Each of the following is at least partially bonded: the first metal material and the wiring substrate, the first metal material and the heat dissipation substrate, the second metal material and the wiring substrate, the second metal material and the heat dissipation substrate, and the first metal material and the second metal material. Each of the following is bonded by alloying: the first metal material and the wiring substrate, the first metal material and the heat dissipation substrate, and the first metal material and the second metal material.

Abstract: A semiconductor module includes: a semiconductor element; a wiring substrate on which the semiconductor element is mounted; a heat dissipation substrate; a first metal material that bonds the wiring substrate and the heat dissipation substrate; and a second metal material that bonds the wiring substrate and the heat dissipation substrate and has a different melting point from the first metal material. Each of the following is at least partially bonded: the first metal material and the wiring substrate, the first metal material and the heat dissipation substrate, the second metal material and the wiring substrate, the second metal material and the heat dissipation substrate, and the first metal material and the second metal material. Each of the following is bonded by alloying: the first metal material and the wiring substrate, the first metal material and the heat dissipation substrate, and the first metal material and the second metal material.

Abstract: A semiconductor module includes: one or more semiconductor elements; a wiring substrate having a first surface on which the one or more semiconductor elements are mounted, the wiring substrate being electrically connected to the one or more semiconductor elements; a heat sink on which the wiring substrate is mounted, the heat sink facing a second surface of the wiring substrate on a reverse side of the first surface; a binder which is formed in a die pad area on the heat sink so as to be present between the wiring substrate and the heat sink, and bonds the wiring substrate and the heat sink; and a support which is formed in a peripheral part of the die pad area on the heat sink, and fixes the wiring substrate to the heat sink by being in contact with a peripheral part of the second surface of the wiring substrate.

Abstract: An internal combustion engine includes a variable mechanism that changes a working angle of an intake valve. A controller diagnoses whether there is an abnormality that an intake air amount reduces during idle operation. The controller changes an abnormality determination threshold for diagnosing an abnormality on the basis of a mode in which the working angle is changed by the variable mechanism.

Abstract: A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip.

Abstract: A semiconductor module includes: one or more semiconductor elements; a wiring substrate having a first surface on which the one or more semiconductor elements are mounted, the wiring substrate being electrically connected to the one or more semiconductor elements; a heat sink on which the wiring substrate is mounted, the heat sink facing a second surface of the wiring substrate on a reverse side of the first surface; a binder which is formed in a die pad area on the heat sink so as to be present between the wiring substrate and the heat sink, and bonds the wiring substrate and the heat sink; and a support which is formed in a peripheral part of the die pad area on the heat sink, and fixes the wiring substrate to the heat sink by being in contact with a peripheral part of the second surface of the wiring substrate.

Abstract: A first chip including electrodes is mounted above an expanded semiconductor chip formed by providing an expanded portion at an outer edge of a second chip including chips. The electrodes of the first chip are electrically connected to the electrodes of the second chip by conductive members. A re-distribution structure is formed from a top of the first chip outside a region for disposing the conductive members along a top of the expanded portion. Connection terminals are provided above the expanded portion, and electrically connected to ones of the electrodes of the first chip via the re-distribution structure.

Abstract: To provide a CoC type semiconductor device capable of preventing a power supply voltage from dropping (IR drop) in a center portion of a chip, and preventing deterioration in timing reliability. The semiconductor device includes a substrate, a first semiconductor chip placed on the substrate, having a circuit formation surface on an upper surface provided opposite to a surface facing the substrate, and including a TSV electrode and a connection pad electrically connected to the substrate, a second semiconductor chip placed on the upper surface of the first semiconductor chip, and electrically connected to the first semiconductor chip through a bump, a connection member for electrically connecting the connection pad of the first semiconductor chip to the substrate, and a redistribution layer formed on the upper surface of the first semiconductor chip, and electrically connected to the TSV electrode.

Abstract: An internal combustion engine includes a variable mechanism that changes a working angle of an intake valve. A controller diagnoses whether there is an abnormality that an intake air amount reduces during idle operation. The controller changes an abnormality determination threshold for diagnosing an abnormality on the basis of a mode in which the working angle is changed by the variable mechanism.

Abstract: A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip.

Abstract: A semiconductor device includes a first extended semiconductor chip including a first semiconductor chip and an extension extending outwardly from a side surface of the first semiconductor chip. The semiconductor device also includes a second semiconductor chip mounted above the first extended semiconductor chip and electrically connected with the first semiconductor chip. The first extended semiconductor chip includes a first extension electrode pad provided above the extension and electrically connected with an electrode of the first semiconductor chip.

Abstract: A detecting apparatus that detects an abnormality of imbalance of air-fuel ratios among cylinders of a multi-cylinder internal combustion engine, which is equipped with a variable working angle mechanism of an intake valve, the detecting apparatus includes an abnormality detection portion that detects a parameter regarding rotational fluctuations of each of the cylinders and detects whether or not there is an abnormality of imbalance of air-fuel ratios among the cylinders. The abnormality detection portion refrains from determining that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined large working angle range, and determines that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined small working angle range that is on a small working angle side with respect to the large working angle range.

Abstract: A semiconductor device includes a first semiconductor chip; an extension formed at a side surface of the first semiconductor chip; a connection terminal formed on the first semiconductor chip; a re-distribution part formed over the first semiconductor chip and the extension and including an interconnect connected to the connection terminal and an insulating layer covering the interconnect; and an electrode formed above the extension on a surface of the re-distribution part and connected to the interconnect at an opening of the insulating layer. The electrode is mainly made of a material having an elastic modulus higher than that of the interconnect. The electrode includes a bonding region where the electrode is bonded to the interconnect at the opening, and an outer region closer to an end part of the extension. The interconnect is formed so as not to continuously extend to a position right below the outer region.

Abstract: A semiconductor device includes a first semiconductor chip; an extension formed at a side surface of the first semiconductor chip; a connection terminal formed on the first semiconductor chip; a re-distribution part formed over the first semiconductor chip and the extension and including an interconnect connected to the connection terminal and an insulating layer covering the interconnect; and an electrode formed above the extension on a surface of the re-distribution part and connected to the interconnect at an opening of the insulating layer. The electrode is mainly made of a material having an elastic modulus higher than that of the interconnect. The electrode includes a bonding region where the electrode is bonded to the interconnect at the opening, and an outer region closer to an end part of the extension. The interconnect is formed so as not to continuously extend to a position right below the outer region.

Abstract: A pad (15) is provided on a surface connecting a first substrate (11) of a lower layer module with an upper layer module, the pad is partially covered by an insulating film (20) to form an opening section (3) exposing the pad (15), a first connection terminal (2) is formed on the lower surface of the first substrate (11) of the lower layer module, the planar shape of the opening section (3) is different from the planar shape of the first connection terminal (2), the outer shape of the opening section (3) is larger than the first connection terminal (2), and in a transmissive inspection from above, the shape of the lower end of a second connection terminal (30) spreading in the opening section (3) is not concealed by the other terminal. This configuration enables easy and reliable determination of whether bonding sections are satisfactory by a non-destructive inspection.

Abstract: A first chip including electrodes is mounted above an expanded semiconductor chip formed by providing an expanded portion at an outer edge of a second chip including chips. The electrodes of the first chip are electrically connected to the electrodes of the second chip by conductive members. A re-distribution structure is formed from a top of the first chip outside a region for disposing the conductive members along a top of the expanded portion. Connection terminals are provided above the expanded portion, and electrically connected to ones of the electrodes of the first chip via the re-distribution structure.

Abstract: A semiconductor device includes a first extended semiconductor chip including a first semiconductor chip and an extension extending outwardly from a side surface of the first semiconductor chip. The semiconductor device also includes a second semiconductor chip mounted above the first extended semiconductor chip and electrically connected with the first semiconductor chip. The first extended semiconductor chip includes a first extension electrode pad provided above the extension and electrically connected with an electrode of the first semiconductor chip.

Abstract: A detecting apparatus that detects an abnormality of imbalance of air-fuel ratios among cylinders of a multi-cylinder internal combustion engine, which is equipped with a variable working angle mechanism of an intake valve, the detecting apparatus includes an abnormality detection portion that detects a parameter regarding rotational fluctuations of each of the cylinders and detects whether or not there is an abnormality of imbalance of air-fuel ratios among the cylinders. The abnormality detection portion refrains from determining that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined large working angle range, and determines that the air-fuel ratios are normal when the working angle at the time of detection of the parameter is within a predetermined small working angle range that is on a small working angle side with respect to the large working angle range.