Patents by Inventor Takatomo Sasaki

Takatomo Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040105481
    Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
    Type: Application
    Filed: August 25, 2003
    Publication date: June 3, 2004
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Masaya Ishida, Tatsuya Morioka, Daisuke Hanaoka, Mototaka Taneya, Shigeo Fujita, Yoichi Kawakami, Masafumi Harada, Takatomo Sasaki, Yusuke Mori
  • Patent number: 6551528
    Abstract: As a wavelength conversion crystal whose double refraction index is controllable, a crystal represented by a formula (I), M1xM21−xCa4O(BL3)3, where each of M1 and M2 represents one or more types of different rare earth elements and 0<x<1, is used, and as a novel means for second harmonics generation, a nonlinear optical crystal represented by a formula (II), GdxY1−xCa4O(BO3)3, where 0.01≦x≦0.35, is used to generate second harmonics.
    Type: Grant
    Filed: November 14, 2000
    Date of Patent: April 22, 2003
    Assignee: Japan Science and Technology Corporation
    Inventors: Takatomo Sasaki, Yusuke Mori, Masashi Yoshimura
  • Publication number: 20030030039
    Abstract: The present invention provides a cesium-lithium-borate crystal, which can be used as a high-performance wavelength converting crystal, having a chemical composition expressed as CsLiB6O10, and substituted cesium-lithium-borate crystals expressed by the following formula:
    Type: Application
    Filed: August 15, 2002
    Publication date: February 13, 2003
    Inventors: Takatomo Sasaki, Akio Hiraki, Yusuke Mori, Sadao Nakai
  • Publication number: 20020000541
    Abstract: The present invention provides a cesium-lithium-borate crystal, which can be used as a high-performance wavelength converting crystal, having a chemical composition expressed as CsLiB6O10, and substituted cesium-lithium-borate crystals expressed by the following formula:
    Type: Application
    Filed: July 3, 2001
    Publication date: January 3, 2002
    Inventors: Takatomo Sasaki, Akio Hiraki, Yusuke Mori, Sadao Nakai
  • Patent number: 6296784
    Abstract: The present invention provides a cesium-lithium-borate crystal, which can be used as a high-performance wavelength converting crystal, having a chemical composition expressed as CsLiB6O10, and substituted cesium-lithium-borate crystals expressed by the following formula: Cs1−xLi1−yMx+yB6O10 or Cs2(1−z)Li2LzB12O20 (where, M is an alkali metal element, and L is an alkali earth metal element); a method for manufacturing same by heating and melting; and an optical apparatus using such crystals
    Type: Grant
    Filed: July 17, 1995
    Date of Patent: October 2, 2001
    Assignee: Research Development Corporation of Japan
    Inventors: Takatomo Sasaki, Akio Hiraki, Yusuke Mori, Sadao Nakai
  • Patent number: 5998313
    Abstract: A cesium-lithium borate crystal, of which the chemical composition is expressed by any of the following formulae:Cs.sub.1-x Li.sub.1-y M.sub.x+y B.sub.6 O.sub.10,andCs.sub.2(1-z) Li.sub.2 L.sub.z B.sub.12 O.sub.20(where, M is an alkali metal element, and L is an alkali earth element), and in which an exotic element is doped or annealed.
    Type: Grant
    Filed: January 27, 1997
    Date of Patent: December 7, 1999
    Assignee: Japan Science and Technology Corporation
    Inventors: Takatomo Sasaki, Yusuke Mori
  • Patent number: 5940417
    Abstract: The present invention relates to single crystals of CsB.sub.3 O.sub.5 having large dimension and high quality which can be grown by pulling methods. The single crystals of CsB.sub.3 O.sub.5 are useful as NLO materials. The NLO devices made of CsB.sub.3 O.sub.5 single crystals can be used in a laser system of high power density and relatively large divergence and posses a character of high SHG conversion efficiency. Moreover, the NLO devices of the present invention are capable of producing coherent harmonics of wavelength as short as 170 nm and tolerating larger processing error of crystals.
    Type: Grant
    Filed: December 15, 1995
    Date of Patent: August 17, 1999
    Assignee: University of Science and Technology of China
    Inventors: Yicheng Wu, Takatomo Sasaki
  • Patent number: 5381754
    Abstract: The present invention relates to single crystals of CsB.sub.3 O.sub.5 having large dimension and high quality which can be grown by pulling methods. The single crystals of CsB.sub.3 O.sub.5 are useful as NLO materials. The NLO devices made of CsB.sub.3 O.sub.5 single crystals can be used in a laser system of high power density and relatively large divergence and posses a character of high SHG conversion efficiency. Moreover, the NLO devices of the present invention are capable of producing coherent harmonics of wavelength as short as 170 nm and tolerating larger processing error of crystals.
    Type: Grant
    Filed: April 23, 1993
    Date of Patent: January 17, 1995
    Assignee: University of Science and Technology of China
    Inventors: Yicheng Wu, Takatomo Sasaki
  • Patent number: 4670117
    Abstract: A solution of material for the desired crystal is filled in a growth tank having two ion-exchange membranes which define a crystal growth vessel between them and two side vessels on opposite sides of the crystal growth vessel, and the growth tank is placed in an outer tank while filling a fluid therebetween. During electrodialysis in the growth tank, the crystal growth vessel solution temperature T.sub.c, the side vessel solution temperature T.sub.o, and the fluid temperature T.sub.w between the tanks are controlled so as to keep the conditions of T.sub.o >T.sub.c >T.sub.w.
    Type: Grant
    Filed: February 11, 1986
    Date of Patent: June 2, 1987
    Assignee: Osaka University
    Inventors: Kunio Yoshida, Chiyoe Yamanaka, Takatomo Sasaki, Osamu Shimomura