Abstract: An object of the present invention is to solve problems such as high temperature processing and long processing time, which are issues of formation of a graphene film by thermal CVD, thereby providing a technique of forming a transparent conductive carbon film using a crystalline carbon film formed at lower temperature within a short time using a graphene film, and the method of the present invention is characterized by setting the temperature of a base material to 500° C. or lower and the pressure to 50 Pa or less, and also depositing a transparent conductive carbon film on a surface of a base material by a microwave surface-wave plasma CVD method in a gas atmosphere in which an oxidation inhibitor as an additive gas for suppressing oxidation of the surface of the base material is added to a carbon-containing gas or a mixed a carbon-containing gas and an inert gas.

Abstract: A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.

Abstract: The invention provides a polishing pad by which optical materials such as lenses, reflecting mirrors etc., or materials requiring a high degree of surface planarity, as in the polishing of silicone wafers, glass substrates or aluminum substrates for hard disks, or general metal polishing, can be flattened with stability and high polishing efficiency. The invention also provides a polishing pad for semiconductor wafers, which is superior in planarizing characteristic, is free from scratches and can be produced at low cost. There is provided a polishing pad which is free from dechucking error so that neither damage to wafers nor decrease in operating efficiency occurs. There is provided a polishing pad which is satisfactory in planarity, within wafer uniformity, and polishing rate and produces less change in polishing rate. There is provided a polishing pad which can make planarity improvement and scratch decrease compatible.

Abstract: A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and rectystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkali earth metal, or boronitride of alkali metal and the boronitride of alkali earth metal.

Abstract: A phase difference element capable of reducing reflection of incident light and a manufacturing method for the phase difference element are disclosed. The phase difference element includes a transparent substrate 11, an interface anti-reflection film group 12 and an obliquely vapor deposited film 13. The interface anti-reflection film group is composed by one or more of alternately high and low refractive index films, with the film thicknesses of the respectively films being equal to or less than the wavelength of light in use. The obliquely vapor deposited film is formed by a plurality of layers of a dielectric material. These layers are alternately obliquely vapor deposited from two directions differing by 180° from each other. The refractive index of the interface anti-reflection film group 12 is higher than the refractive index of the transparent substrate 11 and lesser than that of the obliquely vapor deposited film 13 (FIG. 1).

Abstract: A polishing pad has an excellent polishing rate and is superior in longevity without generating center slow. A method of manufacturing a semiconductor device with the polishing pad is also provided. The polishing pad has a polishing layer consisting of a polyurethane foam having fine cells, wherein a high-molecular-weight polyol component that is a starting component of the polyurethane foam contains a hydrophobic high-molecular-weight polyol A having a number-average molecular weight of 550 to 800 and a hydrophobic high-molecular-weight polyol B having a number-average molecular weight of 950 to 1300 in an A/B ratio of from 10/90 to 50/50 by weight.

Abstract: A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.

Abstract: A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.

Abstract: In a semiconductor diamond device, there is provided an ohmic electrode that is chemically, and thermally stable, and is excellent in respect of low contact resistance, and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni, and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy, or the nickel-chromium compound, it is improved in characteristics.

Abstract: A method for manufacturing a polishing pad made from a polyurethane resin foam having very uniform, fine cells therein and a polishing pad obtained by that method provides a polishing pad having better polishing characteristics (especially, in planarization) while providing improved dressability while maintaining the planarization characteristics and polishing speed of a conventional polishing pad. The polyurethane resin foam is a cured product obtained by reacting an isocyanate-terminated prepolymer with an aromatic polyamine chain extender having a melting point of 70° C. or lower, for example.

Abstract: A phosphorus-doped diamond film, which contains phosphorus at a concentration of 1015 cm?3 or more, has a resistivity of 107 ?cm or less, and allows the voltage for initiation of electron emission to be 30V or less. A method for producing the phosphorus-doped diamond film by growing a diamond film on a diamond substrate by chemical vapor deposition method in an atmosphere containing methane and hydrogen gases and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorus. A diamond electron source having an electrode and a substrate which contains the phosphorous-doped diamond film and emitting electron beams from the phosphorous-doped diamond film when voltage is applied between the electrode and the substrate.

Abstract: A polishing pad generates very few scratches on a surface of a polishing object, and is excellent in planarization property. The polishing pad has a high polishing rate and is excellent in planarization property. The polishing pad grooves become very little clogged with abrasive grains or polishing swarf during polishing and, even when continuously used for a long period of time, the polishing rate is scarcely reduced.

Abstract: The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.

Abstract: It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).

Abstract: A polishing pad includes a polishing layer having abrasive grains dispersed in a resin and is characterized in that the resin is a resin containing ionic groups in the range of 20 to 1500 eq/ton.

Abstract: The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ?T (?T=T0?T1) (%) between T0 and T1 is within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein T1 is the light transmittance (%) of the light-transmitting region measured at the measurement wavelength ? after dipping for 24 hours in a KOH aqueous solution at pH 11 or an H2O2 aqueous solution at pH 4 and T0 is the light-transmittance (%) measured at the measurement wavelength ? before the dipping.

Abstract: A diffraction element for diffracting a particular wavelength of incident optical beam includes: a base section made from a first resin and provided with a predetermined diffraction pattern; and a cover section made from a second resin and covering the diffraction pattern, wherein a rate of change of refraction index of the first resin is substantially the same as a rate of change of refraction index of the second resin in a temperature range between a first temperature and a second temperature.

Abstract: A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.

Abstract: The present invention provides SELF protein having controlling effects on growth and differentiation of undifferentiated cells, wherein the protein contains a novel EGF-like repeat sequence, SELF gene encoding the same, a recombinant vector and a transformed cell containing the SELF gene, a method for treatment or prophylaxis with SELF protein or a recombinant expression vector containing SELF gene, SELF promoter, a recombinant vector and a transformed cell containing SELF promoter, and a screening method using the transformed cell containing SELF promoter.

Abstract: The present invention provides SELF protein having controlling effects on growth and differentiation of undifferentiated cells, wherein the protein contains a novel EGF-like repeat sequence, SELF gene encoding the same, a recombinant vector and a transformed cell containing the SELF gene, a method for treatment or prophylaxis with SELF protein or a recombinant expression vector containing SELF gene, SELF promoter, a recombinant vector and a transformed cell containing SELF promoter, and a screening method using the transformed cell containing SELF promoter.