Abstract: An electric field lens includes an entrance electrode, an intermediate electrode, and an exit electrode that are arranged in a traveling direction of ion beams. The intermediate electrode is maintained in a positive potential, and the entrance electrode and the exit electrode are maintained in a ground potential. In addition, the electric field lens includes a first control electrode and a second control electrode that are disposed between the entrance electrode and the intermediate electrode and between the intermediate electrode and the exit electrode, respectively and maintained in a negative potential.

Abstract: An ion source is to extract a ribbon-shaped ion beam longer in the Y direction in the Z direction and provided with a plasma generating chamber, a plasma electrode which is disposed near the end of the plasma generating chamber in the Z direction and has an ion extracting port extending in the Y direction, a plurality of cathodes for emitting electrons into the plasma generating chamber to generate a plasma and arranged in a plurality of stages along the Y direction, and a magnetic coil which generates magnetic fields along the Z direction in a domain containing the plurality of cathodes inside the plasma generating chamber.

Abstract: This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.

Abstract: An ion source is provided that can generate an ion beam in which the width is wide, the beam current is large, and the uniformity of the beam current distribution in the width direction is high, and that can prolong the lifetime of a cathode. The ion source 2a has: a plasma generating chamber 6 having an ion extraction port 8 extending in the X direction; a magnet 14 which generates a magnetic field 16 extending along the X direction, in the plasma generating chamber 6; indirectly-heated cathodes 20 which are placed respectively on the both sides of the plasma generating chamber 6 in the X direction, and which are used for generating a plasma 10 in the chamber 6, and increasing or decreasing the density of the whole of the plasma 10; and plural filament cathodes 32 which are juxtaposed in the X direction in the plasma generating chamber 6, and which are used for generating the plasma 10 in the chamber 6, and controlling the density distribution of the plasma 10.

Abstract: The projection distances of connecting portions of a coil are reduced, thereby enabling the size and power consumption of an analyzing electromagnet to be reduced, and therefore the size and power consumption of an ion implanting apparatus are enabled to be reduced. [Means for Resolution] An analyzing electromagnet 200 constituting an ion implanting apparatus has a first inner coil 206, a second inner coil 212, three first outer coils 218, three second outer coils 224, and a yoke 230. The inner coils 206, 212 are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils 218, 224 is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field.

Abstract: [Problem] An ion implanting apparatus is provided in which the homogenization of the ion beam current density distribution in the longitudinal direction (Y direction) in an implanting position on a substrate can be improved. [Means for Resolution] The ion implanting apparatus has: an ion source 100 which generates an ion beam 50; electron beam sources Gn which emit an electron beam to be scanned in the Y direction in the ion source 100; a power source 114 for the sources; an ion beam monitor 80 which, in the vicinity of an implanting position, measures a Y-direction ion beam current density distribution of the ion beam 50; and a controlling device 90.

Abstract: An apparatus is provided which is capable of measuring an angle between a holder and an ion beam without generating particles, with a simple structure, in a short time and at high accuracy even during an implantation state. An angle measurement apparatus is configured to: measure an angle of the ion beam by measuring beam plasma produced and emitting light when the ion beam collides with residual gas, with two cameras at two positions in a beam traveling direction; measure an angle of the holder by measuring light from a linear light source provided on the holder; and thereby measure the angle between the ion beam and the holder.

Abstract: An electric field lens includes an entrance electrode, an intermediate electrode, and an exit electrode that are arranged in a traveling direction of ion beams. The intermediate electrode is maintained in a positive potential, and the entrance electrode and the exit electrode are maintained in a ground potential. In addition, the electric field lens includes a first control electrode and a second control electrode that are disposed between the entrance electrode and the intermediate electrode and between the intermediate electrode and the exit electrode, respectively and maintained in a negative potential.

Abstract: An apparatus is provided which is capable of measuring an angle between a holder and an ion beam without generating particles, with a simple structure, in a short time and at high accuracy even during an implantation state. An angle measurement apparatus is configured to: measure an angle of the ion beam by measuring beam plasma produced and emitting light when the ion beam collides with residual gas, with two cameras at two positions in a beam traveling direction; measure an angle of the holder by measuring light from a linear light source provided on the holder; and thereby measure the angle between the ion beam and the holder.

Abstract: This electrostatic acceleration column has first to fifth electrodes arranged in a traveling direction of ions, which are a kind of charged particles. Then, the second electrode divided into two electrode members, which are opposed to each other across a path of the ions, and to which different electric potentials are applied to deflect the ions. Further, the electrodes arranged on a downstream side from the electrode are arranged along an orbit of ions deflected by the electrode and having specific energy.

Abstract: An ion source capable of generating only a monoatomic ion is used as an ion source, and a gas supplying section is provided between a first mass spectrograph and a second mass spectrograph. In order to irradiate a cluster molecule ion, a polyatomic molecule gas is introduced into the gas supplying section. Then, electric charges are exchanged between the monoatomic ion generated at the ion source and a polyatomic molecule gas introduced into the gas supplying section, so that the cluster molecule ion is generated. Thus, the cluster molecule ion is dissociated at the second mass spectrograph. In order to irradiate a monoatomic ion beam, a monoatomic ion generated at the ion source is irradiated without introducing a gas into the gas supplying section.

Abstract: The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.

Abstract: This ion source is set up to satisfy a relation L<3.37B−1(VA)×10−6 where the arc voltage applied between a plasma production vessel 2 and a filament 8 is VA[V], the magnetic flux density of a magnetic field 19 within the plasma production vessel 2 is B[T], and the shortest distance from a most frequent electron emission point 9 located almost at the tip center of the filament 8 to a wall face of the plasma production vessel 2 is L[m].

Abstract: An ion source called as a Bernas-type ion source is additionally provided with a positive electrode and a bias power source. The positive electrode is provided in a plasma production chamber and is electrically isolated therefrom. The positive electrode has three openings at least at both sides of a X direction along a magnetic field produced in a magnetic field generator and at a side of an ion extraction opening (a side of ion beam extraction direction). The bias power source applies a positive bias voltage to the positive electrode and to the plasma production chamber. With combination of constituent elements, the positive electrode serves to push back the ion in the plasma and further functions to suck a secondary electron in the plasma, thereby increase the rate of the multiply charged ion in the plasma.

Abstract: An ion implantation apparatus includes an ion source for extracting ions therefrom at an extraction voltage, an acceleration pipe for accelerating the ions thus extracted at an acceleration voltage of VA and a momentum segregation magnet for selecting the ions having a specific momentum from the ions extracted from the acceleration pipe so that the desired ions are caused to be incident on a target. In the event that MI denotes the mass number of the desired ions, ZI denotes the valence thereof, MC denotes the mass number of noted impurity ions of the impurity ions generated an upstream side of the acceleration pipe, and ZC denotes the valence thereof, if the relationship that the value of MI·(VE+VA)/ZI and that of MC·VA/ZC are equal or approximately equal to each other is satisfied, one of the extraction voltage VE and the acceleration voltage VA is increased and the other thereof is decreased while the value of (VE+VA) is maintained substantially constant.

Abstract: This electrostatic acceleration column has first to fifth electrodes arranged in a traveling direction of ions, which are a kind of charged particles. Then, the second electrode divided into two electrode members, which are opposed to each other across a path of the ions, and to which different electric potentials are applied to deflect the ions. Further, the electrodes arranged on a downstream side from the electrode are arranged along an orbit of ions deflected by the electrode and having specific energy.

Abstract: The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.

Abstract: This ion source 2 has the heating furnace 4 for heating a solid material 6 to produce a vapor 8, the plasma production vessel 16 for producing a plasma 24 by ionizing this vapor 8, and the vapor conduit tube 10 connecting both the heating furnace 4 and the plasma production vessel 16. In this ion source 2, using indium fluoride 6a as the solid material 6, an ion beam 30 containing indium ions is led out, while the temperature of the heating furnace 4 is kept in a range from 450° to 1170° C., and below the temperature of the plasma production vessel 16.

Abstract: An ion source called as a Bernas-type ion source is additionally provided with a positive electrode and a bias power source. The positive electrode is provided in a plasma production chamber and is electrically isolated therefrom. The positive electrode has three openings at least at both sides of a X direction along a magnetic field produced in a magnetic field generator and at a side of an ion extraction opening (a side of ion beam extraction direction). The bias power source applies a positive bias voltage to the positive electrode and to the plasma production chamber. With combination of constituent elements, the positive electrode serves to push back the ion in the plasma and further functions to suck a secondary electron in the plasma, thereby increase the rate of the multiply charged ion in the plasma.

Abstract: Anion implantation apparatus includes an ion source for extracting ions therefrom at an extraction voltage, an acceleration pipe for accelerating the ions thus extracted at an acceleration voltage of VA and a momentum segregation magnet for selecting the ions having a specific momentum from the ions extracted from the acceleration pipe so that the desired ions are caused to be incident on a target. Assuming that MI denotes the mass number of the desired ions, ZI denotes the valence thereof, Mc denotes the mass number of noted impurity ions of the impurity ions generated an upstream side of the acceleration pipe, and ZC denotes the valence thereof, if the relationship that the value of MI·(VE+VA)/ZI and that of MC·VA/ZC are equal or approximately equal to each other is satisfied, one of the extraction voltage VE and the acceleration voltage VA is increased and the other thereof is decreased while the value of (VE+VA) is maintained substantially constant.