Abstract: An ion source 2 has a heating furnace 4 for annealing a solid material 6 to generate a steam 8 and a plasma generator 16 for ionizing the steam 8 to generate a plasma 24. The ion source 2 is for generating ion beam. An indium trifluoride is used as said solid material which has been once heated at temperature in the range of 600° C. to lower than 1170° C., thereby enabling to generate the indium ion beam in a stable amount. For the solid material 6, In(OF)xF3−x (x is 1, 2 or 3) may be used.

Abstract: An ion source 2 has a heating furnace 4 for annealing a solid material 6 to generate a steam 8 and a plasma generator 16 for ionizing the steam 8 to generate a plasma 24. The ion source 2 is for generating ion beam. An indium trifluoride is used as said solid material which has been once heated at temperature in the range of 600° C. to lower than 1170° C., thereby enabling to generate the indium ion beam in a stable amount. For the solid material 6, In(OF)xF3-x (x is 1, 2 or 3) may be used.

Abstract: This ion source 2 has the heating furnace 4 for heating a solid material 6 to produce a vapor 8, the plasma production vessel 16 for producing a plasma 24 by ionizing this vapor 8, and the vapor conduit tube 10 connecting both the heating furnace 4 and the plasma production vessel 16. In this ion source 2, using indium fluoride 6a as the solid material 6, an ion beam 30 containing indium ions is led out, while the temperature of the heating furnace 4 is kept in a range from 450° to 1170° C., and below the temperature of the plasma production vessel 16.

Abstract: This ion source is set up to satisfy a relation