Abstract: In a robot control system, the operation of a mobile robot that moves autonomously inside a facility is controlled based at least on an image captured by a photographing device that photographs a blind area located at a blind angle to the mobile robot. When entry of the mobile robot into a predetermined area corresponding to the blind area is detected, the amount of information obtainable from an image captured by the photographing device is increased.

Abstract: In a robot control system, the operation of a mobile robot that moves autonomously inside a facility is controlled based at least on an image captured by a photographing device that photographs a blind area located at a blind angle to the mobile robot. When entry of the mobile robot into a predetermined area corresponding to the blind area is detected, the amount of information obtainable from an image captured by the photographing device is increased.

Abstract: A robot control system according to the present embodiment is a robot control system that controls a plurality of mobile robots that can autonomously move in a facility. The robot control system acquires error information indicating that an error has occurred in a first transport robot, acquires transported object information related to a transported object of the first transport robot, determines a second transport robot able to transport the transported object of the first transport robot among the transport robots based on the transported object information and the error information, and moves the second transport robot to a transfer location of the transported object of the first transport robot.

Abstract: A mobile robot receives first transmission information transmitted from a server device to manage the mobile robot in a state where wireless communication with the server device is possible, directly executes wireless communication with another mobile robot among the mobile robots and executes a reception process of receiving the first transmission information transmitted from the server device to manage the mobile robot from the other mobile robot in a case where wireless communication with the server device is not possible.

Abstract: An object of the invention is to provide a compound that can be utilized as an antiviral agent, in particular as an anti-RNA viral agent, and especially as an anti-RS viral agent. The invention provides a compound indicated by Formula (1), wherein R1 each independently represent hydrogen, halogen, hydroxyl, amino, carboxyl, C1-C6 alkyl, C1-C6 alkoxyl, C1-C6 halogenoalkyl, C1-C6 alkoxycarbonyl, C1-C6 alkylamino, C2-C5 alkenyl, C3-C6 cycloalkyl, or optionally substituted aryl; R2 each independently represent hydrogen, C1-C6 alkyl, C1-C6 halogenoalkyl, C2-C5 alkenyl, C3-C6 cycloalkyl, optionally substituted aryl or heterocyclic group; and one or more R1 may be present in the same ring, an isomer thereof, a pharmaceutically acceptable salt thereof, or a mixture of these. The compounds provided by the invention are useful as drugs for the prevention or treatment of infectious diseases by virus, especially RS virus, and in particular infectious diseases in the lower airways (e.g., bronchiolitis, pneumonia, etc.).

Abstract: A process for producing an asymmetric compound using a metal complex containing no rare earth metal element is disclosed. The process affords an optically active compound having high optical purity. Optically active binaphthol having the chemical formula and lithium aluminum hydride are reacted, or the optically active binaphthol, a dialkyl aluminum hydride, and a base containing an alkali metal (or a base containing alkaline earth metal) are reacted to prepare a metal complex comprising optically active binaphthol, aluminum, and alkali metal (or alkaline earth metal). This metal complex can be used as a catalyst to perform an asymmetric Michael reaction, an asymmetric phosphonylation reaction, or the like, to obtain, in a high yield, an asymmetric compound having high optical purity.

Abstract: A process for producing an asymmetric compound using a metal complex containing no rare earth metal element is disclosed. The process affords an optically active compound having high optical purity. Optically active binaphthol having the chemical formula ##STR1## and lithium aluminum hydride are reacted, or the optically active binaphthol, a dialkyl aluminum hydride, and a base containing an alkali metal (or a base containing alkaline earth metal) are reacted to prepare a metal complex comprising optically active binaphthol, aluminum, and alkali metal (or alkaline earth metal). This metal complex can be used as a catalyst to perform an asymmetric Michael reaction, an asymmetric phosphonylation reaction, or the like, to obtain, in a high yield, an asymmetric compound having high optical purity.

Abstract: An improved method for forming a functional deposited film by introducing a raw material gas into a substantially enclosed reaction chamber containing a substrate onto which the functional deposited film is to be deposited and coupling microwave energy from a source of microwave energy thereinto to thereby form a glow discharge plasma causing decomposition of the raw material gas whereby forming the functional deposited film on the substrate, the improvement comprising supplying microwave of a power equivalent of 1.1 times or more over that of microwave with which the deposition rate for the decomposed products from the raw material gas being deposited onto the substrate to be saturated to the raw material gas in the reaction chamber and regulating the inner pressure of the reaction chamber to a vacuum of 10 m Torr or less.

Abstract: A microwave plasma treating apparatus comprising a vacuum vessel, a device for introducing a microwave to the inside of the vacuum vessel by way of a microwave transmission circuit, a device for supplying a starting gas to the inside of the vacuum vessel, a device for evacuating the inside of the vacuum vessel, and a specimen holder for maintaining a specimen substrate to the inside of the vacuum vessel, wherein a cavity resonator integrated with two matching circuits is disposed in the microwave transmission circuit and a magnetic field generator is disposed to the outside of the cavity resonator, and having the following main features: (a) matching facilitated by a plunger for adjusting the axial length of the cavity resonator and cylindrical sling type irises, E-H tuner or three-stub tuner disposed at the portion of the cylindrical cavity resonator where the microwave is introduced, (b) a bell jar disposed within the cavity resonator to excite TM mode and (c) a magnetic field generator disposed to the outs

Abstract: A photosensor has a photoconductive member. The photoconductive member has a structure comprising a laminated product consisting of functional thin films superposed on one another. The laminated product comprises at least two functional thin films. The functional thin film containing 10 atomic % or less of hydrogen. The band gaps and conduction types and/or conductivity of the functional thin films are controlled to provide high photo sensitivity.

Abstract: A process for the formation of a deposited functional film by separately introducing, into a film-deposition space (A) for forming a deposited film on a substrate, a precursor as the starting material for forming a deposited film which is formed by applying a microwave energy in to a precursor-generating gaseous raw material a decomposition space (B) and an active species which is formed in a decomposition space (C) and which is chemically reactive with the precursor, respectively and chemically reacting them to thereby form a deposited film on the substrate, wherein the inner wall face of a chamber constituting the film-deposition space (A) and the inner wall face of a chamber constituting the decomposition space (C) are coated with a thin film constituted with an element or ingredient constituting the deposited film having a resistance value of 10.sup.6 .OMEGA..cm or more, thereby preventing intrusion of impurities from inner wall material into the deposited film.

Abstract: An improved process for forming a functional deposited film by HR-CVD method which comprises disposing an electroconductive substrate or an insulating substrate at least one surface of which being applied with electroconductive treatment on a substrate holder in a substantially enclosed film-forming chamber, introducing a precursor formed in an activation chamber disposed separately from the film-forming chamber which is capable of contributing to the formation of the deposited film and an active species formed in another activation chamber disposed separately from the film-forming chamber and the activation chamber which is capable of chemically reacting with the precursor respectively and separately into said film-forming chamber, and chemically reacting them to thereby form a functional deposited film on the substrate, wherein a voltage in the range of from -5 V to -100 V is applied to the electroconductive substrate or the surface of the insulating substrate applied with the electroconductive treatment.

Abstract: An improved method for forming a functional deposited film by introducing a raw material gas into a substantially enclosed reaction chamber containing a substrate onto which the functional deposited film is to be deposited and coupling microwave energy from a source of microwave energy thereinto to thereby form a glow discharge plasma causing decomposition of the raw material gas whereby forming the functional deposited film on the substrate, the improvement comprising supplying microwave of a power equivalent to 1.1 times or more over that of microwave with which the deposition rate for the decomposed products from the raw material gas being deposited onto the substrate to be saturated to the raw material gas in the reaction chamber and regulating the inner pressure of the reaction chamber to a vacuum of 10 m Torr or less.

Abstract: An improved MW-PCVD apparatus, characterized in that in the MW-CVD apparatus having a substrate onto which a deposited film to be formed and a space near the substrate for the decomposition of a raw material gas with the action of microwave energy, a shielding member is provided between said substrate and said space, which has an opening to allow part of the decomposed raw material gas species to be passed toward the substrate.

Abstract: There are provided on improved light receiving member for use in electrophotography and a process for the production thereof.

Abstract: An improved microwave plasma CVD apparatus for the formation of a thin film on a substrate by exciting glow discharge in a reaction chamber, comprising a substantially enclosed reaction chamber to receive the substrate, a means for supplying a film forming raw material gas into said reaction chamber and a means for introducing microwave energy into said reaction chamber, characterized in that said means for introducing microwave energy retains the gas atmosphere in said reaction chamber and as well as is constituted by a microwave transmissive material capable of introducing the microwave energy, said material being alumina ceramics containing glassy component such as SiO.sub.2, CaO and MgO in an amount of 1 wt. % to 10 wt. % and substantially as other component .alpha.-alumina.In the improved apparatus, the microwave transmissive window can be repeatedly used without being damaged for a long period of time and a desirable functional deposited film may be mass-produced at a high deposition rate.

Abstract: A process for the formation of a functional deposited film containing atoms belonging to the group II and VI of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a group II compound (1) and a group VI compound (2) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in an excited state which cause chemical reaction with at least one of the compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, w

Abstract: A process for the formation of a functional deposited film as a thin semiconductor film constituted with the group IV element or a thin semiconductor film constituted with group IV element alloy, by introducing, into a film forming space, a compound as the film-forming raw material and, if required, a compound containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of the compounds is activated, while forming hydrogen atoms in an excited state causing chemical reaction with at least one of the compounds in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film forming space, thereby forming a deposited film on a substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma ge

Abstract: According to the present invention, there is provided an improved process for the formation of a deposited film by way of a microwave plasma CVD method, the improvement comprising monitoring an effective power of a microwave to be introduced into a reaction chamber, leading to a control means an output signal indicative of the effective power corresponding a plasma intensity, and automatically controlling the matching between the reaction chamber and the microwave to be introduced into the reaction chamber according to an output signal from the control means. According to the above process, even after a long discharge time has elapsed, the plasma intensity in the reaction chamber may be maintained constant, and the effective power of the microwave to be introduced into the reaction chamber may be therefore maintained constant.

Abstract: An improvement in the known MW-PCVD process for forming a deposited film on each of a plurality of cylindrical substrates being so arranged as to surround the discharging space in a substantially enclosed reaction space of a deposition chamber by the glow discharge of raw material gas to generate plasmas containing reactive gaseous materials causing the formation of said deposited film in the discharging space while rotating said plurality of substrates, which comprises providing a gas feed pipe provided with a plurality of gas liberation holes opening into the discharging space in every space between every two of the substrates so as to form an encircled discharging space and an open non-discharging space by said plurality of cylindrical substrates and a plurality of gas feed pipes and regulating the deposit thickness to be deposited per a rotation cycle of the substrate passing through the discharging space and the non-discharging space to a 1000 .ANG. or less.