Patents by Inventor Takayoshi Minami
Takayoshi Minami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10672720Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: GrantFiled: October 12, 2018Date of Patent: June 2, 2020Assignee: SOCIONEXT INC.Inventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Publication number: 20190051620Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: ApplicationFiled: October 12, 2018Publication date: February 14, 2019Applicant: SOCIONEXT INC.Inventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Patent number: 10147687Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: GrantFiled: December 11, 2017Date of Patent: December 4, 2018Assignee: SOCIONEXT INC.Inventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Publication number: 20180102327Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: ApplicationFiled: December 11, 2017Publication date: April 12, 2018Applicant: SOCIONEXT INC.Inventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Patent number: 9881878Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: GrantFiled: September 23, 2016Date of Patent: January 30, 2018Assignee: SOCIONEXT INC.Inventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Patent number: 9824981Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: GrantFiled: July 7, 2015Date of Patent: November 21, 2017Assignee: SOCIONEXT INC.Inventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Publication number: 20170012004Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: ApplicationFiled: September 23, 2016Publication date: January 12, 2017Inventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Publication number: 20150311164Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: ApplicationFiled: July 7, 2015Publication date: October 29, 2015Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Publication number: 20120220103Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: ApplicationFiled: May 3, 2012Publication date: August 30, 2012Applicant: FUJITSU SEMICONDUCTOR LIMITEDInventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Patent number: 8193614Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: GrantFiled: March 24, 2008Date of Patent: June 5, 2012Assignee: Fujitsu Semiconductor LimitedInventors: Tomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Patent number: 7971160Abstract: A method for creating a pattern on a photomask includes steps of recognizing a space between main patterns by using pattern data which indicate the main patterns to be adjacently transferred onto a wafer, determining a 1st rule about arrangement of an assist pattern on the photomask, the assist pattern being adjacent to the main patterns and not being transferred onto the wafer, estimating a depth of focus in the presence of the assist pattern among the main patterns, determining a 2nd rule about arrangement of the assist pattern on the photomask to improve the depth of focus in the presence of the 1st assist pattern among the main patterns in a group having one or more number of appearance times of the space between main patterns, and correcting the assist pattern on the photomask using the assist pattern data on the basis of the 2nd rule.Type: GrantFiled: January 22, 2008Date of Patent: June 28, 2011Assignee: Fujitsu Semiconductor LimitedInventors: Morimi Osawa, Takayoshi Minami, Satoru Asai
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Patent number: 7790335Abstract: A double exposure process is performed using a halftone phase shift mask (11) including gate patterns (1), assist patterns (2a) and (2b) with different resoluble line widths, and an assist pattern (2c) with a line width equal to or smaller than a resolution limit which are respectively inserted into portions in each of which a distance between the gate patterns (1) is large, and a Levenson phase shift mask (11) including shifter patterns (3) corresponding to the gate patterns (1) of the photomask 11. On this occasion, the assist patterns (2a), (2b), and (2c) are erased and only the gate patterns (1) are transferred. Consequently, when patterns are transferred by the double exposure process, a common depth of focus of the patterns is improved and highly uniform line widths are realized, which makes it possible to manufacture a highly reliable semiconductor device.Type: GrantFiled: March 21, 2005Date of Patent: September 7, 2010Assignee: Fujitsu Semiconductor LimitedInventor: Takayoshi Minami
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Publication number: 20080230874Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.Type: ApplicationFiled: March 24, 2008Publication date: September 25, 2008Applicant: FUJITSU LIMITEDInventors: Tomoyuki YAMADA, Fumio USHIDA, Shigetoshi TAKEDA, Tomoharu AWAYA, Koji BANNO, Takayoshi MINAMI
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Publication number: 20080113280Abstract: It is an object of the present invention to provide a manufacturing method of a photomask and a manufacturing method of a semiconductor apparatus using the photomask that optimize a sub resolution assist feature on the photomask so as to ensure the depth of focusing for a formed image of a pattern for circuit formation on the photomask, preferably to the miniaturization of a pattern of the semiconductor apparatus.Type: ApplicationFiled: January 22, 2008Publication date: May 15, 2008Applicant: FUJITSU LIMITEDInventors: Morimi OSAWA, Takayoshi MINAMI, Satoru ASAI
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Publication number: 20070231714Abstract: A photomask making method and a semiconductor-device manufacturing method to improve the uniformity of the line widths of patterns. A gate electrode pattern and a gate wiring pattern are formed in a first photomask used in a double exposure process, and shift patterns are formed in a second photomask. Then, assist patterns are disposed at sides of the gate electrode pattern, and assist patterns are disposed at sides of the gate wiring pattern, in the first photomask. Inclusion patterns that include the assist patterns are disposed in the second photomask. With the double exposure process using the first photomask and the second photomask, the depth of focus obtained when the gate electrode pattern and the gate wiring pattern are exposed is improved, the uniformity of the line widths of the gate electrode pattern and the gate wiring pattern is increased.Type: ApplicationFiled: August 31, 2006Publication date: October 4, 2007Applicant: FUJITSU LIMITEDInventor: Takayoshi Minami
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Patent number: 7138312Abstract: The semiconductor device comprises a gate interconnection 24a including a gate electrode formed over a semiconductor substrate 14 with a gate insulation film 22 formed therebetween; a first source/drain diffused layer 28 formed near the end of the gate interconnection 24a; a second source/drain diffused layer 34 formed remote from the gate interconnection 24a and the first source/drain diffused layer 28; and an insulation film 40 formed over the gate interconnection 24a, the first source/drain diffused layer 28 and the second source/drain diffused layer 34, and having a groove-shaped opening 42a formed in, which integrally exposes the gate interconnection 24a, one of the first source/drain diffused layer 28, and one of the second source/drain diffused layer 34; and a contact layer 48a buried in the groove-shaped opening 42a. The groove-shaped openings 42a for the contact layers 48a to be buried in can be formed without failure.Type: GrantFiled: May 3, 2006Date of Patent: November 21, 2006Assignee: Fujitsu LimitedInventors: Takayoshi Minami, Yuji Setta
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Publication number: 20060199318Abstract: The semiconductor device comprises a gate interconnection 24a including a gate electrode formed over a semiconductor substrate 14 with a gate insulation film 22 formed therebetween; a first source/drain diffused layer 28 formed near the end of the gate interconnection 24a; a second source/drain diffused layer 34 formed remote from the gate interconnection 24a and the first source/drain diffused layer 28; and an insulation film 40 formed over the gate interconnection 24a, the first source/drain diffused layer 28 and the second source/drain diffused layer 34, and having a groove-shaped opening 42a formed in, which integrally exposes the gate interconnection 24a, one of the first source/drain diffused layer 28, and one of the second source/drain diffused layer 34; and a contact layer 48a buried in the groove-shaped opening 42a. The groove-shaped openings 42a for the contact layers 48a to be buried in can be formed without failure.Type: ApplicationFiled: May 3, 2006Publication date: September 7, 2006Applicant: FUJITSU LIMITEDInventors: Takayoshi Minami, Yuji Setta
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Patent number: 7064395Abstract: The semiconductor device comprises a gate interconnection 24a including a gate electrode formed over a semiconductor substrate 14 with a gate insulation film 22 formed therebetween; a first source/drain diffused layer 28 formed near the end of the gate interconnection 24a; a second source/drain diffused layer 34 formed remote from the gate interconnection 24a and the first source/drain diffused layer 28; and an insulation film 40 formed over the gate interconnection 24a, the first source/drain diffused layer 28 and the second source/drain diffused layer 34, and having a groove-shaped opening 42a formed in, which integrally exposes the gate interconnection 24a, one of the first source/drain diffused layer 28, and one of the second source/drain diffused layer 34; and a contact layer 48a buried in the groove-shaped opening 42a. The groove-shaped openings 42a for the contact layers 48a to be buried in can be formed without failure.Type: GrantFiled: March 1, 2004Date of Patent: June 20, 2006Assignee: Fujitsu LimitedInventors: Takayoshi Minami, Yuji Setta
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Patent number: 6969580Abstract: A resist pattern of a resist film is formed by exposing the resist film using a gate electrode forming mask (a Levenson phase shift mask), and developing the resist film. An antireflection film is etched using the resist pattern as an etching mask, and the resist pattern and the antireflection film are trimmed. The manner of this trimming is not to etch a hard mask made of an inorganic material, but to etch the resist pattern and the antireflection film made of an organic material. Since a region consistent with a wiring pattern of the hard mask is covered by the resist pattern completely, breaking down and retraction of the wiring are prevented.Type: GrantFiled: April 18, 2003Date of Patent: November 29, 2005Assignee: Fujitsu LimitedInventor: Takayoshi Minami
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Publication number: 20050164129Abstract: A double exposure process is performed using a halftone phase shift mask (11) including gate patterns (1), assist patterns (2a) and (2b) with different resoluble line widths, and an assist pattern (2c) with a line width equal to or smaller than a resolution limit which are respectively inserted into portions in each of which a distance between the gate patterns (1) is large, and a Levenson phase shift mask (11) including shifter patterns (3) corresponding to the gate patterns (1) of the photomask 11. On this occasion, the assist patterns (2a), (2b), and (2c) are erased and only the gate patterns (1) are transferred. Consequently, when patterns are transferred by the double exposure process, a common depth of focus of the patterns is improved and highly uniform line widths are realized, which makes it possible to manufacture a highly reliable semiconductor device.Type: ApplicationFiled: March 21, 2005Publication date: July 28, 2005Applicant: FUJITSU LIMITEDInventor: Takayoshi Minami