Abstract: The semiconductor device comprises a gate interconnection 24a including a gate electrode formed over a semiconductor substrate 14 with a gate insulation film 22 formed therebetween; a first source/drain diffused layer 28 formed near the end of the gate interconnection 24a; a second source/drain diffused layer 34 formed remote from the gate interconnection 24a and the first source/drain diffused layer 28; and an insulation film 40 formed over the gate interconnection 24a, the first source/drain diffused layer 28 and the second source/drain diffused layer 34, and having a groove-shaped opening 42a formed in, which integrally exposes the gate interconnection 24a, one of the first source/drain diffused layer 28, and one of the second source/drain diffused layer 34; and a contact layer 48a buried in the groove-shaped opening 42a. The groove-shaped openings 42a for the contact layers 48a to be buried in can be formed without failure.

Abstract: First and second areas are defined on the substrate. A partial area of a resist film formed on the surface of the substrate is exposed to light having a first intensity, the partial area corresponding to an area above first area, and the light having the first intensity having transmitted through a pattern of a first reticle to be transferred. The resist film above the second area of the substrate is exposed to light having a second intensity weaker than the first intensity. The resist film above the first and second areas is exposed to light having a third intensity weaker than the first intensity, the light having the third intensity having transmitted through a pattern of a second reticle to be transferred. The exposed resist film is developed.

Abstract: A resist pattern of a resist film is formed by exposing the resist film using a gate electrode forming mask (a Levenson phase shift mask), and developing the resist film. An antireflection film is etched using the resist pattern as an etching mask, and the resist pattern and the antireflection film are trimmed. The manner of this trimming is not to etch a hard mask made of an inorganic material, but to etch the resist pattern and the antireflection film made of an organic material. Since a region consistent with a wiring pattern of the hard mask is covered by the resist pattern completely, breaking down and retraction of the wiring are prevented.

Abstract: A semiconductor device characterized by comprising a first insulating film formed on the semiconductor substrate, a first wiring or mark formed on the first insulating film, an electrically isolated pattern formed under the first insulating film and below the first wiring or mark, a hole formed in the first insulating film to connect the first wiring or mark and the electrically isolated pattern, and a second insulating film for covering the first wiring or mark.

Abstract: First and second areas are defined on the substrate. A partial area of a resist film formed on the surface of the substrate is exposed to light having a first intensity, the partial area corresponding to an area above first area, and the light having the first intensity having transmitted through a pattern of a first reticle to be transferred. The resist film above the second area of the substrate is exposed to light having a second intensity weaker than the first intensity. The resist film above the first and second areas is exposed to light having a third intensity weaker than the first intensity, the light having the third intensity having transmitted through a pattern of a second reticle to be transferred. The exposed resist film is developed.