Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate, The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract: A sputtering apparatus includes a chamber, a plate disposed inside the chamber, a target unit including at least one targer facing the plate, a power supply unit coupled to the target, and a filter unit disposed between the substrate and the target. The filter unit includes at least one filter. A substrate is disposed on the plate. The filter unit may include a first filter and a second filter with the first filter disposed between the target and the second filter.

Abstract: Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.

Abstract: In a substrate fixing device and a method form manufacturing the substrate fixing device, the substrate fixing device includes a lower electrode, a dielectric layer and a plurality of protrusions. The dielectric layer is disposed on the lower electrode. The protrusions are spaced apart from each other, and are protruded from the dielectric layer. Each of the protrusions includes an insulating layer disposed on the dielectric layer, and an upper layer disposed on the insulating layer and contacting a substrate.

Abstract: A solid oxide electrochemical cell of an embodiment includes: a cathode; an anode; and an electrolyte layer interposed between the cathode and the anode, wherein a porous region exists in a layer form in a region with a depth of 50% or less of the electrolyte layer from an anode side surface toward the cathode in the electrolyte layer or between the electrolyte layer and the anode.

Abstract: An electrode material for nonaqueous electrolyte secondary battery of an embodiment includes a silicon nanoparticle, and a coating layer coating the silicon nanoparticle. The coating layer includes an amorphous silicon oxide and a silicon carbide phase. At least a part of the silicon carbide phase exists on a surface of the silicon nanoparticle.

Abstract: A negative electrode for nonaqueous electrolyte secondary battery of an embodiment includes a current collector, and a negative electrode mixture layer arranged on the current collector. The negative electrode mixture layer includes a negative electrode active material, a conductive material, and a binder. The negative electrode active material is composite particles including a carbonaceous substance, a silicon oxide phase in the carbonaceous substance, and a silicon phase including crystalline silicon in the silicon oxide phase. The negative electrode active material satisfies d1/d0?0.9 where an average thickness of the mixture layer is d0, and a maximum thickness of a single particle of the composite particles in a vertical direction, the particle occupying the mixture layer, to a surface of the current collector is d1.

Abstract: A nonaqueous electrolyte secondary battery of an embodiment includes a positive electrode, a negative electrode, and a nonaqueous electrolyte. The electrolyte contains an organic solvent with a lithium salt dissolved therein and an additive. An active material of the negative electrode contains at least one metal selected from Si and Sn, at least one or more selected from an oxide of the metal and an alloy containing the metal, and a carbonaceous matter. A fluorine concentration of a film A formed on the metal, the oxide of the metal, or the alloy containing the metal in the negative electrode active material is higher than a fluorine concentration of a film B formed on the carbonaceous matter, the additive includes at least one compound containing fluorine and at least one compound containing no fluorine, or an electrolyte after initial charge contains at least one fluorine-containing additive.

Abstract: A negative electrode active material for a nonaqueous electrolyte secondary battery of an embodiment includes a carbonaceous material, a silicon oxide phase in the carbonaceous material, and a silicon phase in the silicon oxide phase. The negative electrode active material has a crack in the carbonaceous material, and the longest side of the crack has a length equal to or greater than ? of the diameter of the negative electrode active material.

Abstract: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.

Abstract: A negative electrode active material for a nonaqueous electrolyte secondary battery has a carbonaceous substance, a silicon oxide phase in the carbonaceous substance, a silicon phase in the silicon oxide phase, and a zirconia phase in the carbonaceous substance. The negative electrode active material has a diffraction peak at 2?=30±1° in powder X-ray diffraction measurement.

Abstract: An apparatus for treating a substrate may include a process chamber. The process chamber may include a reaction space and an opening portion for receiving the substrate into the reaction space. The apparatus may further include a dielectric layer. The apparatus may further include a plurality of support elements disposed on the dielectric layer and configured to contact a bottom surface of the substrate for supporting the substrate. The plurality of support elements may include a first support element and a second support element immediately neighboring the first support element.

Abstract: In a substrate fixing device and a method form manufacturing the substrate fixing device, the substrate fixing device includes a lower electrode, a dielectric layer and a plurality of protrusions. The dielectric layer is disposed on the lower electrode. The protrusions are spaced apart from each other, and are protruded from the dielectric layer. Each of the protrusions includes an insulating layer disposed on the dielectric layer, and an upper layer disposed on the insulating layer and contacting a substrate.

Abstract: There is provided a negative electrode material for non-aqueous electrolyte secondary batteries, the negative electrode material being a silicon oxide represented by the composition formula, SiOx, containing silicon and silicon oxide, in which x satisfies the relation of 0.1?x?0.8; the silicon oxide contains crystalline silicon; among the particles of crystalline silicon having a diameter of 1 nm or greater, the proportion by number of particles having a diameter of 100 nm or less is 90% or greater; and the BET specific surface area of the silicon oxide is larger than 100 m2/g.

Abstract: A solid oxide electrochemical cell of an embodiment includes: a cathode; an anode; and an electrolyte layer interposed between the cathode and the anode, wherein a porous region exists in a layer form in a region with a depth of 50% or less of the electrolyte layer from an anode side surface toward the cathode in the electrolyte layer or between the electrolyte layer and the anode.

Abstract: A substrate-treating apparatus includes a process chamber including a space therein, a lower electrode which is in the space of the process chamber and supports the substrate, an upper electrode which faces the lower electrode in the process chamber, a high frequency supply line which includes a feed point which applies a high frequency power to the lower electrode, and a modulator which asymmetrically supplies a dielectric substance to a lower portion of the lower electrode with reference to a center portion of the lower electrode.

Abstract: A hydrogen electrode constituted of a mixed phase composed of an oxide sinter having particles of at least one member selected from Ni, Co, Fe, and Cu on a surface part thereof and coated wholly or partly with a film having mixed conductivity and a sinter having ionic conductivity is formed on a surface of an electrolyte having oxygen ion conductivity.