Abstract: According to one embodiment, there is provided a catalyst including a first structure including a metal oxide substrate having a pore, and a fine particle including Cu as a main component supported on an inner surface of the substrate facing the pore, and a second structure formed on the outer surface of the first structure and including Cu as a main component. The second structure is formed into a needle with a tip thereof oriented outward from the first structure.

Abstract: A hydrogen electrode constituted of a mixed phase composed of an oxide sinter having particles of at least one member selected from Ni, Co, Fe, and Cu on a surface part thereof and coated wholly or partly with a film having mixed conductivity and a sinter having ionic conductivity is formed on a surface of an electrolyte having oxygen ion conductivity.

Abstract: A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer including a mixed phase constituted of zirconia stabilized with yttrium oxide, ytterbium oxide, or scandium oxide and of an oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys; a meshy wiring formed on a surface layer part of the electrode layer and made of a material having higher electronic conductivity than the electrode layer; and a current collector which overlies the electrode layer and is in contact with at least the wiring.

Abstract: A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer 12 constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys; a meshy wiring 21 formed on a surface layer part of the electrode layer and made of a material having higher electronic conductivity than the electrode layer; and a current collector 14 which overlies the electrode layer and is in contact with at least the wiring.

Abstract: There is disclosed a metal particle-dispersed composite oxide comprising a matrix material containing a composite oxide comprising a non-reducible metal oxide and an easily reducible metal oxide, the composite oxide containing 0.01 to 0.25 mol % of at least one additive metal selected from Al, Sc, Cr, B, Fe, Ga, In, Lu, Nb and Si, surface metal particles precipitated on an outer surface of the matrix material containing the composite oxide, and inner metal particles precipitated on an inner surface of the matrix material containing the composite oxide.

Abstract: A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

Abstract: A high-frequency magnetic material includes: metal particles of one of Fe and Co or alloy particles based on at least one of Fe and Co; and an oxide phase containing a matrix phase and a metal oxide having a larger valence than the matrix phase. The matrix phase contains a non-reducible metal oxide and the metal oxide having a larger valence than the matrix phase forms a solid solution with the matrix phase.

Abstract: The present invention is to provide a metal oxide sintered structure having a homogeneous catalyst supporting ability, and a production method therefor. Hardly reducing oxide powders and reducing oxide powders are mixed, and then kneaded with a binder. By extrusion molding, a structure comprising channels (fluid communicating holes) is formed. Then, after heating reaction and solid solution, it is reduced under an atmosphere containing a hydrogen. Thereby, a metal oxide sintered structure having the fluid communicating holes, with the metal particles precipitated on the surface is produced. The structure is suitable for use as a catalyst for a fuel cell, or the like.

Abstract: A method of an electron energy distribution in a plasma region generated by high-frequency power. In the method, a heating probe is inserted into the plasma region and heated by a current flowing into the plasma region. A pulse voltage having a sufficient shorter period than a thermal time constant of the heating probe is applied to the probe, which emits thermions. The number of the thermions emitted sufficiently increases. The plasma vibration frequency of the emitted thermions is sufficiently higher than the frequency of the high-frequency power. The floating potential of the heating probe therefore follows the high frequency potential existing in the plasma. The floating potential difference between a voltage period of the pulse voltage and a no-voltage period is detected, and an the electron energy distribution in the plasma region is thereby determined.

Abstract: A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

Abstract: There is disclosed a metal particle-dispersed composite oxide comprising a matrix material containing a composite oxide comprising a non-reducible metal oxide and an easily reducible metal oxide, the composite oxide containing 0.01 to 0.25 mol % of at least one additive metal selected from Al, Sc, Cr, B, Fe, Ga, In, Lu, Nb and Si, surface metal particles precipitated on an outer surface of the matrix material containing the composite oxide, and inner metal particles precipitated on an inner surface of the matrix material containing the composite oxide.

Abstract: To provide Ubidecarenone compositions being excellent in absorbability into the body, highly stable at low temperatures, keeping clear external appearance, and being liquid at ordinary temperature. Ubidecarenone is dissolved in oils by which the accumulation of fats in the body is low, for example, triglyceride, which contains a short chain fatty acid as constitutive fatty acid, preferably SALATRIM, or diglyceride, for example, a hybrid glyceride composed of a middle chain fatty acid and a long chain fatty acid.

Abstract: The present invention is to provide a metal oxide sintered structure having a homogeneous catalyst supporting ability, and a production method therefor. Hardly reducing oxide powders and reducing oxide powders are mixed, and then kneaded with a binder. By extrusion molding, a structure comprising channels (fluid communicating holes) is formed. Then, after heating reaction and solid solution, it is reduced under an atmosphere containing a hydrogen. Thereby, a metal oxide sintered structure having the fluid communicating holes, with the metal particles precipitated on the surface is produced. The structure is suitable for use as a catalyst for a fuel cell, or the like.

Abstract: A method of an electron energy distribution in a plasma region generated by high-frequency power. In the method, a heating probe is inserted into the plasma region and heated by a current flowing into the plasma region. A pulse voltage having a sufficient shorter period than a thermal time constant of the heating probe is applied to the probe, which emits thermions. The number of the thermions emitted sufficiently increases. The plasma vibration frequency of the emitted thermions is sufficiently higher than the frequency of the high-frequency power. The floating potential of the heating probe therefore follows the high frequency potential existing in the plasma. The floating potential difference between a voltage period of the pulse voltage and a no-voltage period is detected, and an the electron energy distribution in the plasma region is thereby determined.

Abstract: A target and a wafer are opposed to each other in a processing vessel in the form of a quartz tube whose internal pressure can be reduced. A low bias voltage is applied to the wafer while Helicon wave plasma of high density is generated between the target and the wafer by an antenna disposed on the circumference of the processing vessel. The wafer is positioned near and outside a lower boundary of a region of the plasma. Deposition seeds from the target are ionized in the plasma region and accelerated vertically to be incident on the wafer and are deposited first on the bottoms of the grooves in a surface of the wafer. In burying deposition seeds in grooves and holes of high aspect ratios which are formed in the surface of the wafer, the deposition seeds can be deposited first on the bottoms without occurrence of voids.

Abstract: The present invention provides a ceramic sintered body excellent in oxidation resistance under high temperatures and markedly superior to the conventional ceramic sintered body in the mechanical strength over a wide temperature range of between room temperature and 1,500.degree. C. The ceramic sintered body of the present invention comprises at least one ceramic crystal grain selected from the group consisting essentially of a monosilicate represented by the general formula RE.sub.2 SiO.sub.5, where RE denotes a IIIa group element including yttrium, and a disilicate represented by the general formula RE.sub.2 Si.sub.2 O.sub.7, where RE denotes a IIIa group element including yttrium, and at least one additional element selected from the group consisting of Al, Cr, Hf, Nb, Zr, Ti, V, Ta, Ca and Mg which is segregated in the boundaries of the ceramic crystal grains in an amount of 0.1 to 15% by weight of the sintered body in terms of the oxide thereof.

Abstract: A brake shoe for an elevator emergency stop has a including a brake body having a braking face and (b) plurality of braking pieces embodied in the braking face side of the brake body to be projected from a braking face. The projection of each of the braking pieces forms a column or a multi-cornered pole having rounded corners. The braking pieces are made of a composite material containing a ceramic base material selected from the group consisting of silicon nitride, silicon carbide and sialon, and particles of at least one ceramic material selected from the group consisting of a carbide, a nitride and a boride. The ceramic particles have a particle size in the range of 10 to 150 .mu.m, and dispersed into the ceramic base material.

Abstract: A plasma processor includes a cylindrical processing chamber storing a semiconductor wafer to be processed, a slot antenna, wound around the outside of a peripheral wall of the processing chamber, for feeding an electromagnetic wave of several tens MHz to the chamber, and an electromagnetic coil, provided on the outside of the processing chamber, for generating plasma in a plasma generating section due to electron cyclotron resonance by applying a magnetic field of 30 gausses or less to said processing chamber. The slot antenna has an elongated conductive plate having a length of about 1/2 of the wavelength of the electromagnetic wave, and an elongate slot formed in the conductive plate.

Abstract: A semiconductor wafer plasma treatment apparatus comprising a processing vessel whose interior is maintained at a predetermined degree of vacuum; a plasma generation means which is arranged on an upper surface of the processing vessel and generates radio-frequency waves into the interior thereof, to cause the generation of a plasma in the process gas within the processing vessel; and a holder for holding a semiconductor wafer that is to be subjected to a predetermined treatment by the plasma generated from the process gas by the action of the plasma generation means, a supply means which supplies process gas into the processing vessel comprises first gas supply pipes that are arranged at positions equidistant in the peripheral direction around the processing vessel and a second gas supply pipe that is arranged at the center of an upper surface of the processing vessel, and gas exhaust means from exhaust gases from the processing vessel is arranged at positions equidistant in the peripheral direction around th

Abstract: A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A semiconductor wafer is positioned flat and parallel to an electron introducing direction in the process chamber. Process gas is introduced into the process chamber and excited into plasma by the electron beam. The wafer is etched by this plasma. Magnetic field is formed at the entrance of the process chamber such that the electron beam is divided to both sides of its extended center line in a horizontal plane and compressed flat in a vertical plane. The magnetic field is also formed such that the electron beam is carried in the horizontal direction at a position where the wafer is arranged in the process chamber.