Abstract: A method for manufacturing a semiconductor device includes: sequentially depositing a gate insulating film 104 composed of a high dielectric constant film containing one or more metallic element(s) selected from a group consisting of Hf, Zr, Al, La and Ta, a barrier film 106 composed of one or more metal nitride selected from a group consisting of TiN, TaN and WN, a metallic film 108 and a polycrystalline silicon film 110 on the semiconductor substrate (p-type semiconductor substrate 102a) to form a multiple-layered film; and silicidizing a lower portion of the polycrystalline silicon film 110 to form a lower layer (forming a first silicide layer 110a) by conducting a heat treatment of the multiple-layered film to diffuse the metal of the metallic film 108 into the polycrystalline silicon film 110.

Abstract: Provided is a semiconductor device including a MIM capacitor, and having excellent waterproof property and antioxidant property even when being formed between wiring layers. The semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first wiring layer embedded in the first insulating film, a wiring cap film for covering the first wiring layer, the MIM capacitor formed on the wiring cap film, a hydrogen barrier film for covering the MIM capacitor, a second insulating film formed on the hydrogen barrier film, conductive plugs passing through the second insulating film and the hydrogen barrier film, one of which being connected to an upper electrode of the MIM capacitor and the other of which being connected to a lower electrode of the MIM capacitor, and a second wiring layer connected to the conductive plugs, and the upper and lower electrodes of the MIM capacitor.

Abstract: In order to solve a problem of occurrence of delamination of interlayer film due to occurrence of a crack in an LSI wiring layer in a UBM lower layer immediately under a solder bump in an outer periphery of an LSI chip, a semiconductor apparatus of the present invention includes a stress boundary between compressive stress and tensile stress in an LSI wiring layer of a bump lower layer and in order to alleviate the stress present in the bump lower layer tensile stress material is arranged on a compressive stress side or compressive stress material is arranged on a tensile stress side with a stress boundary of the LSI wiring layer as a boundary.

Abstract: An indicator that denotes the cleavage direction is arranged along with an integrated circuit of a semiconductor chip. This indicator makes it possible to cut the semiconductor chip along the cleavage direction even if the integrated circuit is arranged not to be in the cleavage direction.

Abstract: A vehicle headlamp includes a projection lens which is placed on an optical axis extending in a front and rear direction of a vehicle, a light source which is placed behind a rear focal point of the projection lens, a reflector which reflects light emanated directly from the light source in a forward direction and toward the optical axis, and a light-dark boundary forming plate which is placed between the projection lens and the light source. The light-dark boundary forming plate extends rearward and obliquely downward from a vicinity of the rear focal point of the projection lens, and a light-dark boundary forming portion is formed on a front end portion of the light-dark boundary forming plate. The light-dark boundary forming portion shields a part of the light reflected from the reflector and forms a cut-off line of a light distribution pattern.

Abstract: A method of forming an insulating film according to one embodiment of the present invention, which is a method of forming an insulating film for use in a semiconductor device, performs thermal oxidation of a tantalum nitride film at a temperature range of 200 to 400 degrees centigrade by a wet oxidation process, whereby a tantalum oxide film is formed as the insulating film.

Abstract: In an interconnect layout 100, the first gate pattern, the second gate pattern, the first dummy pattern, and the second dummy pattern are arranged so that, if a wavelength of a light used to expose the first gate pattern and the second gate pattern is ?, natural numbers are m1, m2, and m3, the first predetermined distance is P1, the second predetermined distance is P2, the third predetermined distance is P3, a design value of the first predetermined distance is P1?, a design value of the second predetermined distance is P2?, and a design value of the third predetermined distance is P3?, then the first predetermined distance satisfies relationships of P1=m1? and P1??0.1??P1?P1?+0.1?, the second predetermined distance satisfies relationships of P2=m2? and P2??0.1??P2?P2?+0.1?, and the third predetermined distance satisfies relationships of P3=m3? and P3??0.1??P3?P3?+0.1?.

Abstract: A vehicle headlamp includes a projection lens which is placed on an optical axis extending in a front and rear direction of a vehicle, a light source which is placed behind a rear focal point of the projection lens, a reflector which reflects light emanated directly from the light source in a forward direction and toward the optical axis, and a light-dark boundary forming plate which is placed between the projection lens and the light source. The light-dark boundary forming plate extends rearward and obliquely downward from a vicinity of the rear focal point of the projection lens, and a light-dark boundary forming portion is formed on a front end portion of the light-dark boundary forming plate. The light-dark boundary forming portion shields a part of the light reflected from the reflector and forms a cut-off line of a light distribution pattern.

Abstract: Method for manufacturing a semiconductor device, capable of providing a reduced variation in threshold electrical voltage by inhibiting a generation of Fermi level pinning, while achieving a stable long-term reliability of a product by inhibiting a generation of leakage current, and such semiconductor device. The method includes: forming a gate electrode by: sequentially depositing a gate insulating film composed of a high dielectric constant film containing one or more metallic element(s) selected from Hf, Zr, Al, La and Ta, a barrier film composed of one or more metal nitride selected from TiN, TaN and WN, a metallic film 108 and a polycrystalline silicon film on the semiconductor substrate to form a multiple-layered film; and silicidizing a lower portion of the polycrystalline silicon film to form a lower layer by conducting a heat treatment of the multiple-layered film to diffuse the metal of the metallic film into the polycrystalline silicon film.

Abstract: An interconnect layout method capable of reducing variations in shape of gate patterns and improving yield of a semiconductor device is provided. In an interconnect layout 100, the first gate pattern, the second gate pattern, the first dummy pattern, and the second dummy pattern are arranged so that, if a wavelength of a light used to expose the first gate pattern and the second gate pattern is ?, natural numbers are m1, m2, and m3, the first predetermined distance is P1, the second predetermined distance is P2, the third predetermined distance is P3, a design value of the first predetermined distance is P1?, a design value of the second predetermined distance is P2?, and a design value of the third predetermined distance is P3?, then the first predetermined distance satisfies relationships of P1=m1? and P1??0.1??P1?P1?+0.1?, the second predetermined distance satisfies relationships of P2=m2? and P2??0.1??P2?P2?+0.1?, and the third predetermined distance satisfies relationships of P3=m3? and P3??0.

Abstract: In a headlamp having a single filament bulb or discharge bulb, there is provided a movable shade that can appear from a reflection mirror located above the single filament bulb. In a usual condition, the movable shade is pulled at the back of the reflection mirror located above the single filament bulb. Then, a light emitted from the single filament bulb is condensed by the reflection mirror and irradiates a very long distance thereby to make a high-speed traveling possible. On the contrary, when it is rainy or foggy, the movable shade is protruded in the front of the reflection mirror. Then, a part of a light emitted from the single filament bulb is shielded by the movable shade, and the road surface in 20-40 m front of the vehicle is darkened thereby to reduce surface reflection from the road surface.

Abstract: A vehicular headlamp utilizing a light source bulb of the H4 type and which provides a low-beam light distribution pattern which makes it easy for the driver to drive and reduces the possibility of oncoming drivers being dazzled by glare. A light source bulb is securely supported by a reflector so that left and right upper edges of a shade are located at substantially the same height and an axis of a filament is upwardly offset from an optical axis of the reflector at a predetermined angle. A reflecting surface of the reflector is provided with a downward deflective reflection zone which downwardly deflects and reflects the light that has traveled from the filament past the right upper edge of the shade and impinged on a traveling-lane-side reflection zone.