Abstract: Provided are a scintillator and the like capable of improving emission intensity. A scintillator (S) comprises a sapphire substrate (6), a GaN layer (4) that is provided on the incident side to the sapphire substrate (6) and includes GaN, a quantum well structure (3) provided on the incident side to the GaN layer (4), and a conductive layer (2) provided on the incident side to the quantum well structure (3), wherein a plurality of emitting layers (21) including InGaN and a plurality of barrier layers (22) including GaN are alternatively stacked in the quantum well structure (3), and an oxygen-containing layer (23) including oxygen is provided between the quantum well structure (3) and the conductive layer (2).

Abstract: The invention is to provide a microstructural image analysis device and a microstructural image analysis method capable of quantifying the relations in a plurality of regions included in a microstructural image. There is provided a microstructural image analysis device for analyzing a microstructural image. The microstructural image analysis device includes a region processing unit that extracts a first region and a second region from the microstructural image and expands the first region and the second region, an overlapping region extraction unit that extracts an overlapping region of both the first region and the second region each time the first region and the second region are expanded, and a persistence diagram generation unit that generates a persistence diagram based on a hole region generated and eliminated due to the overlapping region.

Abstract: A capacitor module is provided which includes a plurality of capacitors, a capacitor case, and a sealing resin with which the capacitor case is filled to seal the capacitors in the capacitor case. The capacitor case includes inward-facing portions of an outer wall thereof each of which bulges or protrudes between every adjacent two of the capacitors. As viewed in a height-wise direction perpendicular both to a direction in which the inward-facing portions protrude and to a direction in which two of the capacitors adjacent each other across one of the inward-facing portions are aligned, the intervening inward-facing portion traverses a line segment passing through centers of the two adjacent capacitors. This structure minimizes thermal interference between the capacitors.

Abstract: To provide an R-T-B based sintered magnet having high Br and high HcJ while suppressing the content of Dy. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqM(balance)T, where R is composed of light rare-earth element(s) RL and heavy rare-earth element(s) RH, RL is Nd and/or Pr, RH is Dy and/or Tb, T is Fe, and 10% by mass or less of Fe is capable of being replaced with Co, M is Nb and/or Zr, inevitable impurities being included, and u, w, x, y, z and q are expressed in terms of % by mass; RH accounts for 5% by mass or less of the R-T-B based sintered magnet, 0.4?x?1.0, 0.07?y?1.0, 0.05?z?0.5, 0?q?0.1, and 0.100?y/(x+y)?0.340; v=u?(6?+10?+8?), where the amount of oxygen (% by mass) is ?, the amount of nitrogen (% by mass) is ?, and the amount of carbon (% by mass) is ?; and v and w satisfy the following inequality expressions: v?32.0, 0.84?w?0.93, and ?12.5w+38.75?v??62.5w+86.125.

Abstract: A capacitor module is provided which includes a plurality of capacitors, a capacitor case, and a sealing resin with which the capacitor case is filled to seal the capacitors in the capacitor case. The capacitor case includes inward-facing portions of an outer wall thereof each of which bulges or protrudes between every adjacent two of the capacitors. As viewed in a height-wise direction perpendicular both to a direction in which the inward-facing portions protrude and to a direction in which two of the capacitors adjacent each other across one of the inward-facing portions are aligned, the intervening inward-facing portion traverses a line segment passing through centers of the two adjacent capacitors. This structure minimizes thermal interference between the capacitors.

Abstract: A robot control system detects a position and a direction of each user by a plurality of range image sensors provided in an exhibition hall. A central controller records an inspection action after a user attends the exhibition hall until the user leaves to generate an inspection action table. When the user attends again, the central controller reads a history of inspection action from the inspection action table. Then, the central controller chooses from an utterance content table an utterance content containing a phrase that mentions the inspection action included in the history at a time of last time attendance, determines the utterance content, and makes a robot output the determined utterance content to the user.

Abstract: A crucible provided with a holding section (12) for holding a raw material (20), an initial distillate recovery section (14) for recovering an initial distillate (24) when the raw material (20) held in the holding section (12) has been vaporized, a main distillate condensing section (16) for condensing a main distillate when the raw material (20) held in the holding section (12) has been vaporized, and a crystal growing section (18) for holding the main distillate (30) comprising a raw material melt (28) condensed by the main distillate condensing section (16) and producing crystals when crystals are grown from the held main distillate (30) is used as a crucible (10) for crystal growth used to grow crystals. This makes it possible to raise the efficiency of manufacturing crystals while achieving high purification of a raw material for semiconductor crystals.

Abstract: To provide an R-T-B based sintered magnet having high Br and high HcJ while suppressing the content of Dy. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqM(balance)T, where R is composed of light rare-earth element(s) RL and heavy rare-earth element(s) RH, RL is Nd and/or Pr, RH is Dy and/or Tb, T is Fe, and 10% by mass or less of Fe is capable of being replaced with Co, M is Nb and/or Zr, inevitable impurities being included, and u, w, x, y, z and q are expressed in terms of % by mass; RH accounts for 5% by mass or less of the R-T-B based sintered magnet, 0.4?x?1.0, 0.07?y?1.0, 0.05?z?0.5, 0?q?0.1, and 0.100?y/(x+y)?0.340; v=u?(6?+10?+8?), where the amount of oxygen (% by mass) is ?, the amount of nitrogen (% by mass) is ?, and the amount of carbon (% by mass) is ?; and v and w satisfy the following inequality expressions: v?32.0, 0.84?w?0.93, and ?12.5w+38.75?v??62.5w+86.125.

Abstract: The purpose of the present invention is to provide an alcoholic solvent, in which FeCo-based particles becoming a soft magnet are improved, for enhancing properties of a magnetic material using no heavy rare earth elements, and is to provide a sintered magnet produced by using it.

Abstract: A robot control system detects a position and a direction of each user by a plurality of range image sensors provided in an exhibition hall. A central controller records an inspection action after a user attends the exhibition hall until the user leaves to generate an inspection action table. When the user attends again, the central controller reads a history of inspection action from the inspection action table. Then, the central controller chooses from an utterance content table an utterance content containing a phrase that mentions the inspection action included in the history at a time of last time attendance, determines the utterance content, and makes a robot output the determined utterance content to the user.

Abstract: Characteristics of a magnetic material are improved without using a heavy rare earth element as a scarce resource. By incorporating fluorine into a magnetic powder and controlling the crystal orientation in crystal grains, a magnetic material securing magnetic characteristics such as coercive force and residual flux density can be fabricated. As a result, the resource problem with heavy rare earth elements can be solved, and the magnetic material can be applied to magnetic circuits that require a high energy product, including various rotating machines and voice coil motors of hard discs.

Abstract: Characteristics of a magnetic material are improved without using a heavy rare earth element as a scarce resource. By incorporating fluorine into a magnetic powder and controlling the crystal orientation in crystal grains, a magnetic material securing magnetic characteristics such as coercive force and residual flux density can be fabricated. As a result, the resource problem with heavy rare earth elements can be solved, and the magnetic material can be applied to magnetic circuits that require a high energy product, including various rotating machines and voice coil motors of hard discs.

Abstract: A semiconductor device includes a transistor. A gate insulating film of the transistor contains oxygen and nitrogen atoms. The gate insulating film does not contain the nitrogen atoms in a first face thereof being in a contact with the semiconductor layer, and in a second face thereof being in a contact with the gate electrode. A concentration peak of the nitrogen atoms appears between the first and second faces in the gate insulating film.

Abstract: A method of forming a semiconductor device includes the following processes. A nitrogen-diffusion region is selectively formed in a semiconductor substrate having first and second regions. The nitrogen-diffusion region is at a shallow level of the first region. A first heat treatment is carried out to form a first oxide layer over the semiconductor substrate. The first oxide layer includes first and second portions. The first portion is in the first region. The second portion is in the second region. The first portion is thinner than the second portion.

Abstract: A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.

Abstract: A communication robot control system displays a selection input screen for supporting input of actions of a communication robot. The selection input screen displays in a user-selectable manner a list of a plurality of behaviors including not only spontaneous actions but also reactive motions (reflex behaviors) in response to behavior of a person as a communication partner, and a list of emotional expressions to be added to the behaviors. According to a user's operation, the behavior and the emotional expression to be performed by the communication robot are selected and decided. Then, reproductive motion information for interactive actions including reactive motions and emotional interactive actions, is generated based on input history of the behavior and the emotional expression.

Abstract: A deletion in the end region of the long arm of a Chromosome 9 is efficiently detected. A genetic testing kit of bladder cancer according to the present invention includes a primer allowing for efficient amplification of a region containing a site of genetic polymorphism present in the ABO blood group gene of Chromosome 9. In the site of genetic polymorphism present in the ABO blood group gene, the frequency of heterozygote (heterozygosity) in the population is extremely high. Therefore, by detecting LOH using a polymorphic site present in the ABO blood group gene, it is possible to reliably detect a deletion near the polymorphic site, in other words, a deletion near the end of the long arm of Chromosome 9.

Abstract: A chemical analysis device capable of suppressing deterioration of analysis and test accuracy while avoiding contamination by residual samples or reagents and having no complicated configuration is constructed. A pipetting unit is equipped with a syringe, plunger, and needle unit in which a carrier for capturing nucleic acid and a detection cell is mounted on the needle unit. A pipetting unit drive system is configured so that the pipetting unit is detachable. After the detection cell is removed from the pipetting unit and fixed to a nucleic acid amplification detection unit, a suction/dispensing operation of samples/reagents is performed by the pipetting unit and components to be measured are captured by the carrier. Captured components are measured after being dispensed into the detection cell fixed to the nucleic acid amplification detection unit.

Abstract: A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.

Abstract: A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.