Abstract: In one example, a display device includes a reception circuit that receives pieces of first, second, and third image data in order. The piece of first image data has pixel values for a first resolution, the piece of second image data has pixel values for a second resolution higher than the first resolution, and the piece of third image data has pixel values included an entire image. A display section includes first, second, and third sets of pixels, and a display drive circuit performs first, second, and third driving for the first, second and third sets of pixels.

Abstract: A display device according to the present disclosure includes: a reception circuit that is configured to receive a piece of first image data, a piece of second image data, and a piece of third image data, the piece of first image data representing an entire image having a first resolution, the piece of second image data representing a peripheral image having a second resolution less than or equal to the first resolution, the peripheral image including an image outside the entire image, the piece of third image data representing a first partial image having a third resolution higher than the first resolution, the first partial image including an image having an image range narrower than an image range of the entire image; a display section that includes a plurality of pixels, and is configured to display an image having a same image range as the image range of the entire image; a first sensor that is configured to detect a change in orientation of the display device; an image processing circuit that is configu

Abstract: A processing device included in a protocol evaluation support apparatus executes creation processing (S302 and S303) for creating a simultaneous merging symbol at a portion in a protocol where a plurality of elements simultaneously merge into one element, and creating a simultaneous branching symbol at a portion in a protocol where one element simultaneously branches to a plurality of elements, development processing (S304) for developing the protocol for each of paths included in the process procedure, removal processing (S305 and S306) for removing all of the elements that are duplicated in a process after the simultaneous merging symbol and removing all of the elements that are duplicated in a process before the simultaneous branching symbol for the protocol, and calculation processing for making each of individual evaluation values correspond to each of the remaining elements and calculating an overall evaluation value of the protocol based on the individual evaluation values made to correspond to the rem

Abstract: The object of the present invention is to suppress power consumption. A display device includes: a first holding unit provided in a pixel and configured to hold an image signal; and a PWM signal generation unit provided in the pixel and configured to generate a pulse width modulation (PWM) signal corresponding to the image signal on the basis of the image signal and count signal held in the first holding unit.

Abstract: Provided are a scintillator and the like capable of improving emission intensity. A scintillator (S) comprises a sapphire substrate (6), a GaN layer (4) that is provided on the incident side to the sapphire substrate (6) and includes GaN, a quantum well structure (3) provided on the incident side to the GaN layer (4), and a conductive layer (2) provided on the incident side to the quantum well structure (3), wherein a plurality of emitting layers (21) including InGaN and a plurality of barrier layers (22) including GaN are alternatively stacked in the quantum well structure (3), and an oxygen-containing layer (23) including oxygen is provided between the quantum well structure (3) and the conductive layer (2).

Abstract: Provided are a scintillator and the like capable of improving emission intensity. A scintillator (S) comprises a sapphire substrate (6), a GaN layer (4) that is provided on the incident side to the sapphire substrate (6) and includes GaN, a quantum well structure (3) provided on the incident side to the GaN layer (4), and a conductive layer (2) provided on the incident side to the quantum well structure (3), wherein a plurality of emitting layers (21) including InGaN and a plurality of barrier layers (22) including GaN are alternatively stacked in the quantum well structure (3), and an oxygen-containing layer (23) including oxygen is provided between the quantum well structure (3) and the conductive layer (2).

Abstract: The invention is to provide a microstructural image analysis device and a microstructural image analysis method capable of quantifying the relations in a plurality of regions included in a microstructural image. There is provided a microstructural image analysis device for analyzing a microstructural image. The microstructural image analysis device includes a region processing unit that extracts a first region and a second region from the microstructural image and expands the first region and the second region, an overlapping region extraction unit that extracts an overlapping region of both the first region and the second region each time the first region and the second region are expanded, and a persistence diagram generation unit that generates a persistence diagram based on a hole region generated and eliminated due to the overlapping region.

Abstract: A capacitor module is provided which includes a plurality of capacitors, a capacitor case, and a sealing resin with which the capacitor case is filled to seal the capacitors in the capacitor case. The capacitor case includes inward-facing portions of an outer wall thereof each of which bulges or protrudes between every adjacent two of the capacitors. As viewed in a height-wise direction perpendicular both to a direction in which the inward-facing portions protrude and to a direction in which two of the capacitors adjacent each other across one of the inward-facing portions are aligned, the intervening inward-facing portion traverses a line segment passing through centers of the two adjacent capacitors. This structure minimizes thermal interference between the capacitors.

Abstract: To provide an R-T-B based sintered magnet having high Br and high HcJ while suppressing the content of Dy. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqM(balance)T, where R is composed of light rare-earth element(s) RL and heavy rare-earth element(s) RH, RL is Nd and/or Pr, RH is Dy and/or Tb, T is Fe, and 10% by mass or less of Fe is capable of being replaced with Co, M is Nb and/or Zr, inevitable impurities being included, and u, w, x, y, z and q are expressed in terms of % by mass; RH accounts for 5% by mass or less of the R-T-B based sintered magnet, 0.4?x?1.0, 0.07?y?1.0, 0.05?z?0.5, 0?q?0.1, and 0.100?y/(x+y)?0.340; v=u?(6?+10?+8?), where the amount of oxygen (% by mass) is ?, the amount of nitrogen (% by mass) is ?, and the amount of carbon (% by mass) is ?; and v and w satisfy the following inequality expressions: v?32.0, 0.84?w?0.93, and ?12.5w+38.75?v??62.5w+86.125.

Abstract: A capacitor module is provided which includes a plurality of capacitors, a capacitor case, and a sealing resin with which the capacitor case is filled to seal the capacitors in the capacitor case. The capacitor case includes inward-facing portions of an outer wall thereof each of which bulges or protrudes between every adjacent two of the capacitors. As viewed in a height-wise direction perpendicular both to a direction in which the inward-facing portions protrude and to a direction in which two of the capacitors adjacent each other across one of the inward-facing portions are aligned, the intervening inward-facing portion traverses a line segment passing through centers of the two adjacent capacitors. This structure minimizes thermal interference between the capacitors.

Abstract: A robot control system detects a position and a direction of each user by a plurality of range image sensors provided in an exhibition hall. A central controller records an inspection action after a user attends the exhibition hall until the user leaves to generate an inspection action table. When the user attends again, the central controller reads a history of inspection action from the inspection action table. Then, the central controller chooses from an utterance content table an utterance content containing a phrase that mentions the inspection action included in the history at a time of last time attendance, determines the utterance content, and makes a robot output the determined utterance content to the user.

Abstract: A crucible provided with a holding section (12) for holding a raw material (20), an initial distillate recovery section (14) for recovering an initial distillate (24) when the raw material (20) held in the holding section (12) has been vaporized, a main distillate condensing section (16) for condensing a main distillate when the raw material (20) held in the holding section (12) has been vaporized, and a crystal growing section (18) for holding the main distillate (30) comprising a raw material melt (28) condensed by the main distillate condensing section (16) and producing crystals when crystals are grown from the held main distillate (30) is used as a crucible (10) for crystal growth used to grow crystals. This makes it possible to raise the efficiency of manufacturing crystals while achieving high purification of a raw material for semiconductor crystals.

Abstract: To provide an R-T-B based sintered magnet having high Br and high HcJ while suppressing the content of Dy. Disclosed is an R-T-B based sintered magnet represented by the formula: uRwBxGayCuzAlqM(balance)T, where R is composed of light rare-earth element(s) RL and heavy rare-earth element(s) RH, RL is Nd and/or Pr, RH is Dy and/or Tb, T is Fe, and 10% by mass or less of Fe is capable of being replaced with Co, M is Nb and/or Zr, inevitable impurities being included, and u, w, x, y, z and q are expressed in terms of % by mass; RH accounts for 5% by mass or less of the R-T-B based sintered magnet, 0.4?x?1.0, 0.07?y?1.0, 0.05?z?0.5, 0?q?0.1, and 0.100?y/(x+y)?0.340; v=u?(6?+10?+8?), where the amount of oxygen (% by mass) is ?, the amount of nitrogen (% by mass) is ?, and the amount of carbon (% by mass) is ?; and v and w satisfy the following inequality expressions: v?32.0, 0.84?w?0.93, and ?12.5w+38.75?v??62.5w+86.125.

Abstract: The purpose of the present invention is to provide an alcoholic solvent, in which FeCo-based particles becoming a soft magnet are improved, for enhancing properties of a magnetic material using no heavy rare earth elements, and is to provide a sintered magnet produced by using it.

Abstract: A robot control system detects a position and a direction of each user by a plurality of range image sensors provided in an exhibition hall. A central controller records an inspection action after a user attends the exhibition hall until the user leaves to generate an inspection action table. When the user attends again, the central controller reads a history of inspection action from the inspection action table. Then, the central controller chooses from an utterance content table an utterance content containing a phrase that mentions the inspection action included in the history at a time of last time attendance, determines the utterance content, and makes a robot output the determined utterance content to the user.

Abstract: Characteristics of a magnetic material are improved without using a heavy rare earth element as a scarce resource. By incorporating fluorine into a magnetic powder and controlling the crystal orientation in crystal grains, a magnetic material securing magnetic characteristics such as coercive force and residual flux density can be fabricated. As a result, the resource problem with heavy rare earth elements can be solved, and the magnetic material can be applied to magnetic circuits that require a high energy product, including various rotating machines and voice coil motors of hard discs.

Abstract: Characteristics of a magnetic material are improved without using a heavy rare earth element as a scarce resource. By incorporating fluorine into a magnetic powder and controlling the crystal orientation in crystal grains, a magnetic material securing magnetic characteristics such as coercive force and residual flux density can be fabricated. As a result, the resource problem with heavy rare earth elements can be solved, and the magnetic material can be applied to magnetic circuits that require a high energy product, including various rotating machines and voice coil motors of hard discs.

Abstract: A semiconductor device includes a transistor. A gate insulating film of the transistor contains oxygen and nitrogen atoms. The gate insulating film does not contain the nitrogen atoms in a first face thereof being in a contact with the semiconductor layer, and in a second face thereof being in a contact with the gate electrode. A concentration peak of the nitrogen atoms appears between the first and second faces in the gate insulating film.

Abstract: A method of forming a semiconductor device includes the following processes. A nitrogen-diffusion region is selectively formed in a semiconductor substrate having first and second regions. The nitrogen-diffusion region is at a shallow level of the first region. A first heat treatment is carried out to form a first oxide layer over the semiconductor substrate. The first oxide layer includes first and second portions. The first portion is in the first region. The second portion is in the second region. The first portion is thinner than the second portion.

Abstract: A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.