Abstract: Characteristics of a magnetic material are improved without using a heavy rare earth element as a scarce resource. By incorporating fluorine into a magnetic powder and controlling the crystal orientation in crystal grains, a magnetic material securing magnetic characteristics such as coercive force and residual flux density can be fabricated. As a result, the resource problem with heavy rare earth elements can be solved, and the magnetic material can be applied to magnetic circuits that require a high energy product, including various rotating machines and voice coil motors of hard discs.

Abstract: A semiconductor device includes a transistor. A gate insulating film of the transistor contains oxygen and nitrogen atoms. The gate insulating film does not contain the nitrogen atoms in a first face thereof being in a contact with the semiconductor layer, and in a second face thereof being in a contact with the gate electrode. A concentration peak of the nitrogen atoms appears between the first and second faces in the gate insulating film.

Abstract: A method of forming a semiconductor device includes the following processes. A nitrogen-diffusion region is selectively formed in a semiconductor substrate having first and second regions. The nitrogen-diffusion region is at a shallow level of the first region. A first heat treatment is carried out to form a first oxide layer over the semiconductor substrate. The first oxide layer includes first and second portions. The first portion is in the first region. The second portion is in the second region. The first portion is thinner than the second portion.

Abstract: A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.

Abstract: A communication robot control system displays a selection input screen for supporting input of actions of a communication robot. The selection input screen displays in a user-selectable manner a list of a plurality of behaviors including not only spontaneous actions but also reactive motions (reflex behaviors) in response to behavior of a person as a communication partner, and a list of emotional expressions to be added to the behaviors. According to a user's operation, the behavior and the emotional expression to be performed by the communication robot are selected and decided. Then, reproductive motion information for interactive actions including reactive motions and emotional interactive actions, is generated based on input history of the behavior and the emotional expression.

Abstract: A deletion in the end region of the long arm of a Chromosome 9 is efficiently detected. A genetic testing kit of bladder cancer according to the present invention includes a primer allowing for efficient amplification of a region containing a site of genetic polymorphism present in the ABO blood group gene of Chromosome 9. In the site of genetic polymorphism present in the ABO blood group gene, the frequency of heterozygote (heterozygosity) in the population is extremely high. Therefore, by detecting LOH using a polymorphic site present in the ABO blood group gene, it is possible to reliably detect a deletion near the polymorphic site, in other words, a deletion near the end of the long arm of Chromosome 9.

Abstract: A chemical analysis device capable of suppressing deterioration of analysis and test accuracy while avoiding contamination by residual samples or reagents and having no complicated configuration is constructed. A pipetting unit is equipped with a syringe, plunger, and needle unit in which a carrier for capturing nucleic acid and a detection cell is mounted on the needle unit. A pipetting unit drive system is configured so that the pipetting unit is detachable. After the detection cell is removed from the pipetting unit and fixed to a nucleic acid amplification detection unit, a suction/dispensing operation of samples/reagents is performed by the pipetting unit and components to be measured are captured by the carrier. Captured components are measured after being dispensed into the detection cell fixed to the nucleic acid amplification detection unit.

Abstract: A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second ISSG process compensates an in-plane thickness distribution of the film formed by the first ISSG process. The time length for the first and second ISSG steps is determined based on a desired film thickness, a time length dependency of a film formed by the second ISSG process, and the oxidation rate of the first and second ISSG processes.

Abstract: A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.

Abstract: A communication robot control system displays a selection input screen for supporting input of actions of a communication robot. The selection input screen displays in a user-selectable manner a list of a plurality of behaviors including not only spontaneous actions but also reactive motions (reflex behaviors) in response to behavior of a person as a communication partner, and a list of emotional expressions to be added to the behaviors. According to a user's operation, the behavior and the emotional expression to be performed by the communication robot are selected and decided. Then, reproductive motion information for interactive actions including reactive motions and emotional interactive actions, is generated based on input history of the behavior and the emotional expression.

Abstract: After a first gate oxide film (302) is formed on a substrate (301), a nitride layer (303) is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film (305A) in the thinner film part area and a third gate oxide film (305B) in a thicker film part area. By executing second oxynitriding process, nitride layers (306A and 306B) are formed at the thinner and the thicker part areas.

Abstract: In nucleic acid amplification, the amount of a labeled or modified oligomer used is reduced to lower cost, and detection is enabled within the measurement range of a detection unit without requiring operations such as dilution. A nucleic acid measurement method of the invention comprises the steps of extracting a target nucleic acid, mixing an oligomer labeled with a luminescent substance or a modification group with another oligomer that has the same base sequence with that of the labeled oligomer and that is not labeled with a luminescent substance or a modification group, amplifying the target nucleic acid using the mixture of the labeled oligomer and the unlabeled oligomer, adding a luminescent substance to an oligomer labeled with a modification group and its amplification product, and measuring the amplified target nucleic acid using a photodetector.

Abstract: After a first gate oxide film is formed on a substrate, a nitride layer is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film in the thinner film part area and a third gate oxide film in a thicker film part area. By executing second oxynitriding process, nitride layers are formed at the thinner and the thicker part areas.

Abstract: With respect to nitriding of an oxide film on an inner wall of a trench, a method for producing a semiconductor device is provided, the method preventing the characteristic deterioration of the semiconductor device by controlling and optimizing peak nitrogen concentration in an oxide film to reduce the stress and to suppress the threshold voltage shift due to the positive charge of nitrogen.

Abstract: A deletion in the end region of the long arm of a Chromosome 9 is efficiently detected. A genetic testing kit of bladder cancer according to the present invention includes a primer allowing for efficient amplification of a region containing a site of genetic polymorphism present in the ABO blood group genes of Chromosome 9. In the site of genetic polymorphism present in the ABO blood group genes, the frequency of heterozygote (heterozygosity) in the population is extremely high. Therefore, by detecting LOH using a polymorphic site present in the ABO blood group genes, it is possible to reliably detect a deletion near the polymorphic site, in other words, a deletion near the end of the long arm of Chromosome 9.

Abstract: After a first gate oxide film (302) is formed on a substrate (301), a nitride layer (303) is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate oxide film forming process forms a second gate oxide film (305A) in the thinner film part area and a third gate oxide film (305B) in a thicker film part area. By executing second oxynitriding process, nitride layers (306A and 306B) are formed at the thinner and the thicker part areas.

Abstract: A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

Abstract: A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.

Abstract: A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

Abstract: A communication robot includes a speaker. By generating a sound or voice through the speaker, the human is requested to cause a robot to make a certain action. When the human makes an action to the robot, the movement of the robot head or arm assists for the action.