Patents by Inventor Takayuki Katsunuma

Takayuki Katsunuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11114304
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: September 7, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takayuki Katsunuma, Toru Hisamatsu, Shinya Ishikawa, Yoshihide Kihara, Masanobu Honda, Maju Tomura, Sho Kumakura
  • Publication number: 20210233778
    Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.
    Type: Application
    Filed: January 28, 2021
    Publication date: July 29, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Maju TOMURA, Tomohiko NIIZEKI, Takayuki KATSUNUMA, Hironari SASAGAWA, Yuta NAKANE, Shinya ISHIKAWA, Kenta ONO, Sho KUMAKURA, Yusuke TAKINO, Masanobu HONDA
  • Publication number: 20210202262
    Abstract: A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.
    Type: Application
    Filed: December 24, 2020
    Publication date: July 1, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Daisuke NISHIDE, Takayuki Katsunuma
  • Publication number: 20210175091
    Abstract: An apparatus and method process a substrate in a first session and a second session. In the first session, a hybrid gas application cycle is performed in a chamber that holds the substrate. A first gas is introduced for a first time period so components of the first gas adsorb onto the substrate. Subsequently, a second gas is introduced for a second time period so the second gas reacts with the components of the first gas to provide a protective layer on sidewalls of a pattern of the substrate, and the second gas etches a bottom portion of the pattern, a ratio of the first time period to the second time period being a use-ratio. Then, in a second session, the hybrid gas application cycle is repeated with a different use-ratio that corresponds with a vertical dimension of the pattern.
    Type: Application
    Filed: December 10, 2019
    Publication date: June 10, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Katsunuma
  • Publication number: 20210151301
    Abstract: A method for etching a film includes: supplying a precursor gas to the substrate, thereby forming a precursor layer on a substrate; and etching the film with a chemical species from plasma formed from a processing gas so as to increase a depth of the opening, and form a protective region from the precursor layer with the chemical species or another chemical species from the plasma. A plurality of cycles each including the supplying the precursor gas and the etching the film is executed. A temperature of the substrate during execution of the etching the film included in at least one cycle of the plurality of cycles and a temperature of the substrate during execution of the etching the film included in at least one other cycle of the plurality of cycles are set to be different from each other.
    Type: Application
    Filed: November 11, 2020
    Publication date: May 20, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tomohiko NIIZEKI, Takayuki KATSUNUMA, Yoshihide KIHARA, Maju TOMURA
  • Publication number: 20210143019
    Abstract: A plasma processing apparatus includes a plasma chamber that accommodates a substrate having a film including a side wall surface and a bottom surface that define an opening; and a controller that controls a process on the substrate in the plasma chamber. The controller includes a sequencer that performs a sequence including forming a precursor layer on the opening of the film; and generating a plasma to form a protective film on the side wall surface of the opening of the film from the precursor layer and to etch the bottom surface of the opening of the film. The controller simultaneously forms the protective film on the side wall surface of the opening of the film and etches the bottom surface of the opening of the film.
    Type: Application
    Filed: January 19, 2021
    Publication date: May 13, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Takayuki KATSUNUMA
  • Publication number: 20210134604
    Abstract: Disclosed is a method for etching an etching target layer which contains silicon and is provided with a metal-containing mask thereon. The method includes: generating plasma of a first processing gas containing a fluorocarbon gas in a processing container that accommodates the etching target layer and the mask to form a fluorocarbon-containing deposit on the mask and the etching target layer; and generating plasma of a second processing gas containing an inert gas in the processing container to etch the etching target layer by radicals of the fluorocarbon contained in the deposit. A plurality of sequences, each including the generating the plasma of the first processing gas and the generating the plasma of the second processing gas, are performed.
    Type: Application
    Filed: January 15, 2021
    Publication date: May 6, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Takayuki KATSUNUMA
  • Publication number: 20210098234
    Abstract: A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas, and selectively etching the first region with respect to the second region by generating a second plasma from the second processing gas containing an inert gas. The first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms.
    Type: Application
    Filed: September 29, 2020
    Publication date: April 1, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki KATSUNUMA, Daisuke NISHIDE
  • Publication number: 20210082713
    Abstract: An etching method includes (a) performing a plasma etching on an organic film, having a mask formed thereon, to form a recess in the organic film; (b) forming an organic protective film on a side wall surface of the recess in the organic film; and (c) performing an additional plasma etching on the organic film after (b).
    Type: Application
    Filed: September 9, 2020
    Publication date: March 18, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Takayuki KATSUNUMA, Masanobu HONDA, Yuta NAKANE, Shinya ISHIKAWA
  • Publication number: 20210050222
    Abstract: Etching stop which is caused by a metal released from a metal-containing mask can be avoided. A plasma etching method includes a protective film forming process of forming a protective film on a metal-containing film, which is formed on an etching target film and provided with a preset opening pattern, by a first processing gas; and an etching process of etching the etching target film by plasma generated from a second processing gas while using, as a mask, the metal-containing film on which the protective film is formed.
    Type: Application
    Filed: October 30, 2020
    Publication date: February 18, 2021
    Inventor: Takayuki Katsunuma
  • Patent number: 10923360
    Abstract: In a method of etching a film having a side wall surface and a bottom surface that defines an opening, a precursor layer is formed on the film and the film is etched by a chemical species generated from a processing gas. A protection region is formed from the precursor layer by the chemical species generated from a plasma or the processing or a separate chemical species from the plasma or processing gas while the film is being etched.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: February 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Katsunuma
  • Patent number: 10916442
    Abstract: Disclosed is a method for etching an etching target layer which contains silicon and is provided with a metal-containing mask thereon. The method includes: generating plasma of a first processing gas containing a fluorocarbon gas in a processing container that accommodates the etching target layer and the mask to form a fluorocarbon-containing deposit on the mask and the etching target layer; and generating plasma of a second processing gas containing an inert gas in the processing container to etch the etching target layer by radicals of the fluorocarbon contained in the deposit. A plurality of sequences, each including the generating the plasma of the first processing gas and the generating the plasma of the second processing gas, are performed.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: February 9, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Katsunuma
  • Patent number: 10854430
    Abstract: In a plasma etching method, a deposit containing an element forming an upper electrode is deposited on a metal-containing mask having a predetermined pattern while sputtering the upper electrode by a plasma of a first processing gas. Then, an etching target film is etched by a plasma of a second processing gas while using the metal-containing mask on which the deposit is deposited as a mask.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: December 1, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Katsunuma
  • Patent number: 10854470
    Abstract: Etching stop which is caused by a metal released from a metal-containing mask can be avoided. A plasma etching method includes a protective film forming process of forming a protective film on a metal-containing film, which is formed on an etching target film and provided with a preset opening pattern, by a first processing gas; and an etching process of etching the etching target film by plasma generated from a second processing gas while using, as a mask, the metal-containing film on which the protective film is formed.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: December 1, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Katsunuma
  • Patent number: 10811274
    Abstract: A method of etching selectively etches a first region of a substrate with respect to a second region of the substrate formed of a different material from the first region. A deposition film is formed of a chemical species included in plasma generated from a first gas. A gaseous precursor is supplied to the substrate having the deposition film formed thereon to form an adsorption film on the substrate from the precursor. Ions from plasma generated from a second gas are supplied to the substrate having the deposition film and the adsorption film formed thereon so as to cause a reaction between the material of the first region and a chemical species included in the deposition film, so that the first region is etched. The adsorption film reduces the etching rate of the second region during the etching of the first region.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: October 20, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takayuki Katsunuma
  • Publication number: 20200206419
    Abstract: A medical pump includes a reader configured to read drug identification information, a storage unit that stores the drug identification information read by the reader, a notification unit, and a control unit, in which when the reader reads drug identification information anew while the drug identification information is stored in the storage unit, the control unit compares the drug identification information being stored in the storage unit with the drug identification information read anew by the reader, and when the drug identification information being stored in the storage unit does not match the drug identification information read anew by the reader, the control unit causes the notification unit to notify of non-matching between drugs.
    Type: Application
    Filed: March 6, 2020
    Publication date: July 2, 2020
    Applicant: TERUMO KABUSHIKI KAISHA
    Inventor: Takayuki Katsunuma
  • Publication number: 20200194257
    Abstract: A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toru HISAMATSU, Takayuki KATSUNUMA, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA
  • Publication number: 20200176265
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Application
    Filed: September 9, 2019
    Publication date: June 4, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki KATSUNUMA, Toru HISAMATSU, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA, Maju TOMURA, Sho KUMAKURA
  • Publication number: 20200111679
    Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.
    Type: Application
    Filed: December 9, 2019
    Publication date: April 9, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masahiro TABATA, Takayuki KATSUNUMA, Masanobu HONDA
  • Patent number: 10541147
    Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: January 21, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Takayuki Katsunuma, Masanobu Honda