Abstract: A dust collector includes a main-body housing and a motor assembly disposed in the main-body housing. The motor assembly includes a blower fan, which is disposed in the interior of the main-body housing; and a suction motor, which rotates the blower fan. The motor assembly generates suction force at a suction port, which fluidly communicates with the interior of the main-body housing. At least first and second air-exhaust passageways are respectively in the up-down direction in the interior of the main-body housing and through which air exhausted from the motor assembly flows.

Abstract: An experiment support apparatus includes: one or more non-transitory computer-readable media that include an instruction; and one or more processors that execute the instruction. The instruction is configured to cause the one or more processors to execute an operation, the operation includes: causing a display device to display a condition table TB that indicates an experiment condition for measurement, in response to an input of the experiment condition; and causing the display device to display at least one of a measurement result based on measurement data, or an analysis result of the measurement data, in a cell of the condition table TB, in response to an input of the measurement data, the measurement data being obtained using a measurement apparatus under the experiment condition corresponding to the cell.

Abstract: A measurement system includes: an optical measurement instrument that measures a surface of a specimen; and a control apparatus that controls the measurement instrument. The control apparatus includes: one or more non-transitory computer-readable media that include an instruction; and one or more processors that execute the instruction. The instruction is configured to cause the one or more processors to execute an operation. The operation includes: causing the measurement instrument to repetitively measure the surface of the specimen without changing the setting; and evaluating appropriateness of the setting for measuring surface texture of the specimen, based on comparison between a measurement value of the surface texture of the specimen calculated from a measurement data item output from the measurement instrument, and a degree of variation in measurement by the measurement instrument calculated from a plurality of measurement data items output from the measurement instrument.

Abstract: A film forming method forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, wherein the film forming method includes: (a) a step of supplying a raw material gas and a reaction gas as a processing gas to the processing container; and (b) a step of generating plasma of the processing gas using a radio-frequency power of 100 MHz or higher.

Abstract: An experiment support apparatus includes: one or more non-transitory computer-readable media that include an instruction; and one or more processors that execute the instruction. The instruction is configured to cause the one or more processors to execute an operation, the operation includes: causing a display device to display a condition table TB that indicates an experiment condition for measurement, in response to an input of the experiment condition; and causing the display device to display at least one of a measurement result based on measurement data, or an analysis result of the measurement data, in a cell of the condition table TB, in response to an input of the measurement data, the measurement data being obtained using a measurement apparatus under the experiment condition corresponding to the cell.

Abstract: A measurement system includes: an optical measurement instrument that measures a surface of a specimen; and a control apparatus that controls the measurement instrument. The control apparatus includes: one or more non-transitory computer-readable media that include an instruction; and one or more processors that execute the instruction. The instruction is configured to cause the one or more processors to execute an operation. The operation includes: causing the measurement instrument to repetitively measure the surface of the specimen without changing the setting; and evaluating appropriateness of the setting for measuring surface texture of the specimen, based on comparison between a measurement value of the surface texture of the specimen calculated from a measurement data item output from the measurement instrument, and a degree of variation in measurement by the measurement instrument calculated from a plurality of measurement data items output from the measurement instrument.

Abstract: There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.

Abstract: A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH4)4 gas by feeding H2 gas as carrier gas into a raw material container in which solid M(BH4)4 (where M is Zr or Hf) is accommodated to introduce a mixture gas of H2 gas and M(BH4)4 gas having a volume ratio of flow rates (H2/M(BH4)4) of 2 or more into the processing container, and deposit a MBx film (where M is Zr or Hf and x is 1.8 to 2.5) on the object using a thermal CVD.

Abstract: A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH4)4 gas by feeding H2 gas as carrier gas into a raw material container in which solid M(BH4)4 (where M is Zr or Hf) is accommodated to introduce a mixture gas of H2 gas and M(BH4)4 gas having a volume ratio of flow rates (H2/M(BH4)4) of 2 or more into the processing container, and deposit a MBx film (where M is Zr or Hf and x is 1.8 to 2.5) on the object using a thermal CVD.

Abstract: A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH4)4 gas by feeding H2 gas as carrier gas into a raw material container in which solid M(BH4)4 (where M is Zr or Hf) is accommodated to introduce a mixture gas of H2 gas and M(BH4)4 gas having a volume ratio of flow rates (H2/M(BH4)4) of 2 or more into the processing container, and deposit a MBx film (where M is Zr or Hf and x is 1.8 to 2.5) on the object using a thermal CVD.

Abstract: A high-pressure processing apparatus is used for performing a film formation process on a target object, while using a process fluid containing a high-pressure fluid and a film formation source material. The apparatus includes a pressure tight container defining a process field for accommodating the target object, and configured to withstand a pressure applied from the high-pressure fluid. The pressure tight container is made of a first material. A support member is disposed inside the pressure tight container to support the target object. A fluid supply system is configured to supply the process fluid onto the target object. A thermally shielding layer is disposed to cover a surface of the pressure tight container defining the process field. The thermally shielding layer is made of a second material having a thermal conductivity higher than that of the first material.

Abstract: A vacuum processing system includes a process chamber configured to accommodate a target object and perform a process thereon under a vacuum environment. The process chamber is provided with an exhaust system and a gas supply system. An ion generator configured to generate minus ions is disposed in a space outside the process chamber. The space is arranged to selectively communicate with the interior of the process chamber. A negative charge applicator is configured to form a negatively charged state of the target object within the process chamber.

Abstract: In a film deposition method which forms a Cu film on a Cu diffusion preventing film formed on a substrate, a contact film which is provided for adhering the Cu film to the Cu diffusion preventing film is formed on the Cu diffusion preventing film. A processing medium in which a precursor is dissolved in a medium of a supercritical state is supplied to the substrate so that the Cu film is formed on the contact film.

Abstract: A deposition method for depositing on a substrate includes the step of: using a process medium made by adding a precursor to a medium in a supercritical state. The precursor is added to the medium in the supercritical state where the precursor is dissolved in an organic solvent.

Abstract: A film formation method of forming a film on a fine-pattern by supplying a processing medium that is in the supercritical state in which a precursor is dissolved on a target substrate is disclosed. The film formation method includes a first process of supplying the processing medium on the target substrate, the temperature of which is set at a first temperature that is lower than a film formation minimum temperature that is the lowest temperature at which film formation takes place, and a second process of forming the film on the target substrate by raising the temperature of the target substrate from the first temperature to a second temperature that is higher than the film formation minimum temperature.

Abstract: A plate is placed near a substrate held by a substrate holding section. A treating liquid is ejected from a treating liquid ejecting section, thereby plating the substrate electrolessly. The treating liquid flows through the gap between the substrate and the plate. Therefore a flow of the treating liquid occurs on the substrate. As a result, a fresh treating liquid can be supplied onto the substrate. Thus, a plating film can be formed very uniformly on the substrate even if the amount of treating liquid is small.

Abstract: A deposition apparatus for supplying a process medium including a medium in a supercritical state and a precursor to a processed substrate so that the processed substrate is deposited on, includes a process vessel, a support stand which is provided in the process vessel, is configured to support the processed substrate, and include a heating part, a medium supply part which is connected to the process vessel via a medium supply path and supplies the process medium to the process vessel, and a medium reflux path configured to reflux the process medium supplied to the process vessel to the medium supply part. The medium supply part includes a first temperature control part configured to control a temperature of the process medium.

Abstract: A reduction process is performed at a low temperature to thereby realize a high production yield. An ion supply unit heats negative ions containing hydride ions to a predetermined temperature. The ion supply unit applies an electric field to a negative ion source with a predetermined intensity, so that the hydride ions are extracted from the negative ion source. Further, the ion supply unit supplies the hydride ions extracted into a processing chamber by a nonreactive gas of a carrier gas to thereby reduce an oxide film formed on a surface of a metallic film on a semiconductor wafer disposed inside the processing chamber.

Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.