Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

Abstract: Locking claw engages a recording medium to be transferred, and a determination is made as to which of a plurality of predetermined points a current position of the locking member corresponds to. Current position of the recording medium can be determined indirectly on the basis of the thus-determined predetermined point corresponding to the current position of the locking member. If any recording medium is not properly settled in a predetermined rest position at power-ON, then the recording medium is automatically transferred to be settled in the predetermined rest position. Simplified detection of the position of the locking claw is made in absolute or quasi-absolute form, by a picker position detector unit that is provided in association with a rotating drive shaft of the locking member and employs a simply-constructed mechanism capable of generating detection pulses responsive to predetermined rotational angles of two shafts rotating at different rates.

Abstract: Locking claw engages a recording medium to be transferred, and a determination is made as to which of a plurality of predetermined points a current position of the locking member corresponds to. Current position of the recording medium can be determined indirectly on the basis of the thus-determined predetermined point corresponding to the current position of the locking member. If any recording medium is not properly settled in a predetermined rest position at power-ON, then the recording medium is automatically transferred to be settled in the predetermined rest position. Simplified detection of the position of the locking claw is made in absolute or quasi-absolute form, by a picker position detector unit that is provided in association with a rotating drive shaft of the locking member and employs a simply-constructed mechanism capable of generating detection pulses responsive to predetermined rotational angles of two shafts rotating at different rates.

Abstract: A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al-CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.

Abstract: A method for forming a multilevel interconnection of a semiconductor device of the present invention includes the steps of forming a first wiring layer by depositing a metallic film containing aluminum on an insulating film of a substrate and patterning the metallic film, forming an interlayer insulating film on the entire surface of the substrate to cover the wiring layer from the upper side, forming a connection hole reaching to the first wiring layer at a predetermined position of the interlayer insulating film, selectively depositing aluminum onto an interior of the connection hole at a volume fraction of 100% or more by CVD to fill the interior of the connection hole, flattening the entire upper surface of the interlayer insulating film including the connection hole filled with aluminum by a polishing process, washing the entire surface flattened by the polishing process, and depositing the metallic film containing aluminum at a predetermined position of the upper surface of the flattened and washed inte

Abstract: A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al--CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.

Abstract: A polishing treatment called CMP (chemical mechanical polishing) is utilized for filling a contact hole formed in a silicon oxide film with a metallic layer in a manufacturing process of a semiconductor device. After a CMP treatment, a target surface, on which the silicon oxide film and the metallic layer are exposed, is washed with a washing liquid so as to remove residues due to the CMP treatment. The washing liquid comprises a fluorine compound for providing an etchant for the silicon oxide film and the metallic layer, and a protective agent which can be adhered onto a surface of the metallic layer so as to form a protective film. The ratio between the fluorine compound and the protective agent is set such that etching rates of the silicon oxide film and the metallic layer to be effected by the washing liquid fall within ranges of from 0.5 nm/min to 5 nm/min and from 0.5 nm/min to 6 nm/min, respectively, and a ratio between these etching rates falls within a range of from "2:1" to "1:3".

Abstract: A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by a selective Al CVD, and a metal wiring formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.