Abstract: Lead wires 10 are soldered at their one ends respectively to lands 120 on a wiring board 100 while the other ends of the lead wires are connected to an electrical part mounted on a movable member 200. A portion of each of the lead wires 10 is passed through a U-shaped notch 130 in the wiring board 100 , and a loop portion 16, formed at another portion of each lead wire 10, is loosely fitted on a projected piece portion 140 of the wiring board 100.

Abstract: A turntable driving device has a spindle motor 5, a bearing 7, and a wire spring 9. The spindle motor 5 has a rotation shaft 11 which is to be coupled to the turntable 3. The bearing 7 is placed on the lateral side of the rotation shaft 11, and has a pair of inclined faces 7a that are opened in the side of the rotation shaft 11 so as to sandwich the rotation shaft 11, and that are formed to be abuttable against the rotation shaft 11. The wire spring 9 is a member for urging the bearing 7 toward the rotation shaft 11.

Abstract: The method of manufacturing a hydrogen-absorbing alloy electrode comprises: a step of reducing an oxide or hydroxide residing on the surface of a hydrogen-absorbing alloy particle while the alloy particle is held in an atmosphere of a hydrogen gas maintained at a temperature where absorbing of the hydrogen gas does not substantially occur; a step of naturally cooling atmosphere from the temperature where absorbing of the hydrogen gas does not substantially occur to the temperature where the equilibrium hydrogen pressure of the hydrogen-absorbing alloy is equal to the hydrogen pressure in the atmosphere of the hydrogen gas and thereafter vacuum-evacuating the atmosphere of the hydrogen gas so that the hydrogen-absorbing alloy particle is cooled to room temperature while the hydrogen gas is exhausted; a step of exhausting the hydrogen gas and cooling the atmosphere to room temperature and thereafter introducing at least one kind of gas selected from the group consisting of argon, nitrogen and carbon dioxide int

Abstract: A method of surface treatment of a layer grown on a semiconductor substrate by chemical vapor deposition technique for removing a projection appearing on the layer comprises the steps of forming a layer on the semiconductor substrate by chemical vapor deposition technique, forming a membrane of plastic material that resists etching on the layer, pressing a flat plate against the plastic membrane on a projection of the layer to expose the projection, and etching the projection.