Abstract: A semiconductor device includes a semiconductor element having an Ni—V electrode and a conductor, the semiconductor element and the conductor being bonded via Sn-based lead-free solder. In the semiconductor device, an Sn—V compound layer and an (Ni, Cu)3Sn4 compound layer adjacent to the Sn—V compound are formed adjacent to an interface between the semiconductor element and the Sn-based lead-free solder. A manufacturing method for a semiconductor device according to the present invention includes: causing the Sn-based lead-free solder and the Ni—V electrode to react with each other to form an Sn—V layer and an (Ni, Cu)3Sn4 compound layer; and following formation of the Sn—V layer, leaving an unreacted layer of the Ni—V electrode, the unreacted layer having not reacted with the Sn-based lead-free solder, intact.

Abstract: An image forming apparatus includes a rotatable image bearing member, a developing member, a transfer member, and a brush contacting a surface of the image bearing member in a contact portion downstream of a transfer portion and upstream of a developing portion with respect to a rotational direction of the image bearing member. The toner which is not transferred onto a toner image receiving member is collected by the developing member. In a charging series, the toner is positioned on the same side as a normal charge polarity of the toner relative to the brush. In the contact portion, a maximum value of a contact pressure of 0.7 gf/mm2 or more and 3.5 gf/mm2 or less, a maximum contact area ratio is 18% or more and 74% or less, and a Clark-Evans index of the brush is 1 or more.

Abstract: A shifting device in which a selected shift position can be confirmed easily, and which can be fitted easily in vehicles. The shifting device comprises: a restriction member that restricts a movement of a shift lever into a predetermined shift slot in a first shifting mode, and that cancels the restriction of the movement of the shift lever in a second shifting mode; and an indicator that indicates a first pattern when the first shifting mode is selected, and that indicates a second pattern when the second shifting mode is selected.

Abstract: There is provided a radio-frequency module and a communication device with which miniaturization can be achieved and quality deterioration can be suppressed. A radio-frequency module includes a mount board on which a ground terminal is disposed, a first chip, a second chip, and a cover (a shield cover). The first chip is disposed on the mount board. The second chip is disposed on the first chip. The cover covers at least a part of the first chip and at least a part of the second chip. The second chip has a first connection terminal (a ground terminal) on an opposite side from the first chip in a thickness direction of the mount board. The cover includes a shield layer connected to the ground terminal disposed on the mount board. The first connection terminal is connected to the shield layer.

Abstract: A shifting device for an electric vehicle having a virtual manual transmission system, that is configured to realize a variety of shift patterns and torque characteristics. The shifting device comprises: an indicator that indicates a shift pattern; and an indication switcher that switches the shift pattern indicated in the indicator to another pattern. At least any one of the number of the shift positions and a virtual gear stage assigned to the shift position in the shift pattern switched by the indication switcher is different from that in the previous shift pattern indicated in the indicator before switched by the indication switcher.

Abstract: A radio frequency module includes a substrate having a first major surface and a second major surface that face each other, a first component disposed on or over the first major surface of the substrate, a second component disposed on the first component, a third component disposed on or over the first major surface of the substrate, and a metallic body connected to a ground. One end of the metallic body is connected to the first major surface of the substrate; and in plan view, the metallic body is disposed between the first component and the third component.

Abstract: A virtual manual transmission system for an electric vehicle for simulating the behavior of a vehicle having a manual transmission by controlling a motor while protecting an electric storage device. A controller is configured to: change torque of the motor when a virtual manual shifting is executed by operating a clutch device, an accelerator device, and a shifting device; and reduce a regulation on a change rate of the torque of the motor or an input/output power to/from the electric storage device.

Abstract: A shifting device in which a selected shift position can be confirmed easily, and which can be fitted easily in vehicles. The shifting device comprises: a restriction member that restricts a movement of a shift lever into a predetermined shift slot in a first shifting mode, and that cancels the restriction of the movement of the shift lever in a second shifting mode; and an indicator that indicates a first pattern when the first shifting mode is selected, and that indicates a second pattern when the second shifting mode is selected.

Abstract: Provided are a semiconductor device having small characteristic variations with time and high reliability and an in-vehicle control device using the same, the semiconductor device including a plurality of transistor elements constituting a current mirror circuit or a differential amplifier circuit that requires high relative accuracy.

Abstract: A virtual manual transmission system for an electric vehicle for simulating the behavior of a vehicle having a manual transmission by controlling a motor while protecting an electric storage device. A controller is configured to: change torque of the motor when a virtual manual shifting is executed by operating a clutch device, an accelerator device, and a shifting device; and reduce a regulation on a change rate of the torque of the motor or an input/output power to/from the electric storage device.

Abstract: There is provided a radio-frequency module and a communication device with which miniaturization can be achieved and quality deterioration can be suppressed. A radio-frequency module includes a mount board on which a ground terminal is disposed, a first chip, a second chip, and a cover (a shield cover). The first chip is disposed on the mount board. The second chip is disposed on the first chip. The cover covers at least a part of the first chip and at least a part of the second chip. The second chip has a first connection terminal (a ground terminal) on an opposite side from the first chip in a thickness direction of the mount board. The cover includes a shield layer connected to the ground terminal disposed on the mount board.

Abstract: An inductance reduction effect is improved by reducing the distortion of an inductance loop generated when a switching element is turned on and off. An upper arm circuit portion (201U) and a lower arm circuit portion (201L) are provided so as to be shifted in the second direction orthogonal to the first direction in which the upper arm circuit portion (201U) and the lower arm circuit portion (201L) are separated from each other, and at least a part of a snubber circuit connection portion region (202) constituted by a positive electrode terminal portion (181), a negative electrode terminal portion (155), and a snubber element (30) is provided in the first region generated by shifting the upper arm circuit portion (201U) from the lower arm circuit portion (201L) in the second direction.

Abstract: An object is to provide a new electronic control unit that can improve detection accuracy of a sense current even in a region where the current value of the sense current is small. Provided is a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to current output transistors controlling a current flowing in a coil load. The current in the sense current detection unit is input to an analog/digital converter, and the current value of the current flowing in the sense current detection unit is converted into a digital value. The current value of the current flowing in the sense current detection unit is increased through a combination or a selection of the plurality of sense transistors of the sense current detection unit in a region where the current value of the main current of the current output transistors is small compared to a region where the current value of the main current is large.

Abstract: To provide a radio frequency module and a communication device capable of achieving reduction in height. The radio frequency module includes a mounting substrate and one or more chip inductors. The mounting substrate has a recess at least one end of both ends in a second direction orthogonal to a first direction that is a thickness direction of the mounting substrate. A second chip inductor that is at least one chip inductor of the one or more chip inductors is disposed in the recess.

Abstract: In a semiconductor device equipped with a current mirror circuit, a highly reliable semiconductor device capable of suppressing a change in a mirror ratio of the current mirror circuit over time is provided. A current mirror circuit that includes a first MOS transistor and a plurality of MOS transistors paired with the first MOS transistor, and a plurality of wiring layers formed on an upper layer of the MOS transistor are provided. The plurality of wiring layers are arranged such that wiring patterns have the same shape within a predetermined range from an end of a channel region of each of the first MOS transistor and the plurality of MOS transistors.

Abstract: Disclosed is a production method for a poly(vinyl alcohol) having a degree of saponification of 97.0 mol % or more, comprising: a pulverization step of pulverizing a first poly(vinyl alcohol) having a particulate form to obtain a second poly(vinyl alcohol) having an adjusted particle size, and a heating step of heating the second poly(vinyl alcohol).

Abstract: Provided are a semiconductor device having small characteristic variations with time and high reliability and an in-vehicle control device using the same, the semiconductor device including a plurality of transistor elements constituting a current mirror circuit or a differential amplifier circuit that requires high relative accuracy.

Abstract: Provided is a vehicle-mounted semiconductor device enabling a temperature increase of active elements to be restricted. A vehicle-mounted semiconductor device includes: a semiconductor substrate; a plurality of active elements formed on the semiconductor substrate; a plurality of trenches surrounding the plurality of active elements to insulate and separate the active elements; and a terminal connecting in parallel the plurality of active elements insulated and separated by different trenches among the plurality of trenches and connected to an outside.

Abstract: An object is to provide a new electronic control unit that can improve detection accuracy of a sense current even in a region where the current value of the sense current is small. Provided is a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to current output transistors controlling a current flowing in a coil load. The current in the sense current detection unit is input to an analog/digital converter, and the current value of the current flowing in the sense current detection unit is converted into a digital value. The current value of the current flowing in the sense current detection unit is increased through a combination or a selection of the plurality of sense transistors of the sense current detection unit in a region where the current value of the main current of the current output transistors is small compared to a region where the current value of the main current is large.

Abstract: It is an object of the present invention to provide a switch element and a load driving apparatus capable of suppressing a characteristic change of an on-resistance without lowering an off-breakdown voltage. The switching element includes a control electrode, an active element region, and an inactive element region, and the active element region and the inactive element region are formed adjacent to each other on the control electrode. Alternatively, in the load driving apparatus including a current driving switch element and a current detecting switch element that is connected in parallel to the load driving switch element and that detects an energization current of the load driving switch element, the current detecting switch element includes at least a control electrode, an active element region, and an inactive element region, and the active element region and the inactive element region are formed adjacent to each other on the control electrode.