Abstract: A nonvolatile semiconductor memory includes a first and a second diffusion layer regions, a floating gate electrode disposed, with a gate insulating film interposed therebetween, on a channel region between the first and second diffusion layer regions, and a control gate electrode serving as a word line and disposed on the floating gate electrode with an interelectrode insulating film interposed therebetween. The interelectrode insulating film covers whole side portions of the floating gate electrode located in a direction different from a direction in which the word line extends, and the control gate electrode covers the side portions of the floating gate electrode located in the direction different from the direction in which the word line extends.

Abstract: A disclosed information recording apparatus includes an erasing unit configured to erase prerecorded information on recording media capable of being colored and decolored by heat; a recording unit configured to record information on the recording media from which the prerecorded information is erased; and a control unit configured, when a recording request is received, to cause the recording unit to start recording information on a first one of the recording media and to cause the erasing unit to start erasing prerecorded information on a second one of the recording media.

Abstract: A disclosed information recording apparatus includes an erasing unit configured to erase prerecorded information on recording media capable of being colored and decolored by heat; a recording unit configured to record information on the recording media from which the prerecorded information is erased; and a control unit configured, when a recording request is received, to cause the recording unit to start recording information on a first one of the recording media and to cause the erasing unit to start erasing prerecorded information on a second one of the recording media.

Abstract: A semiconductor device of an aspect of the present invention includes a semiconductor substrate, two diffusion layers provided in the semiconductor substrate, a gate insulating film provided on a channel region between the two diffusion layers, and a gate electrode which is composed of a stack of a plurality of conductive films and a plurality of insulating films provided on the gate insulating film and a silicide layer provided on the stack, wherein of the plurality of films included in the stack, the conductive film different in configuration from the silicide layer is in contact with the gate insulating film.

Abstract: A semiconductor memory device includes a memory cell transistor and a first MOS transistor. The memory cell transistor includes a first insulating film, a second insulating film, a control gate electrode, and a first diffusion layer. The first insulating film formed on the first active region. The second insulating film formed on the first insulating film. The control gate electrode formed so as to include a first metal film formed on the second insulating film and a first conductive film formed on the first metal film. The first MOS transistor includes a second conductive film, a second metal film, a third conductive film, and a second diffusion layer. The second conductive film formed on a second active region. The second metal film formed on the second conductive film. The third conductive film formed on a second metal film.

Abstract: A nonvolatile semiconductor memory of an aspect of the invention includes memory cells in the memory cell forming area, and select gate transistors in the select gate forming area. Each memory cell has two first diffusion layers formed in a semiconductor substrate, a first gate insulating film formed on the semiconductor substrate, a charge storage layer formed on the first gate insulating film, a first intermediate insulating film formed on the charge storage layer and a first gate electrode formed on the first intermediate insulating film. Each select gate transistor has two second diffusion layers formed in the semiconductor substrate, a second gate insulating film formed on the semiconductor substrate, a second intermediate insulating film formed in direct contact with the second gate insulating film and having the same structure as the first intermediate insulating film, and a second gate electrode formed on the second intermediate insulating film.

Abstract: Data concerning a transfer pattern of lamination transparent film is not externally sent and stored in a memory but generated by a random pattern generating module of a color controlling DSP 22. A random number generating section 23a generates a pseudorandom number for each dot of one line; a tone data obtaining section 23b obtains tone data corresponding to the pseudorandom number; and a transferring section 23c transfers the tone data to a head signal converting ASIC 24. Tone data for each dot of one line is alternately written in line buffers 1 and 2. Using the tone data written in the line buffers 1 and 2, a thermal head 130 transfers transparent film 120F.

Abstract: A nonvolatile semiconductor memory includes a first and a second diffusion layer regions, a floating gate electrode disposed, with a gate insulating film interposed therebetween, on a channel region between the first and second diffusion layer regions, and a control gate electrode serving as a word line and disposed on the floating gate electrode with an interelectrode insulating film interposed therebetween. The interelectrode insulating film covers whole side portions of the floating gate electrode located in a direction different from a direction in which the word line extends, and the control gate electrode covers the side portions of the floating gate electrode located in the direction different from the direction in which the word line extends.