Abstract: A customer service support device includes: an acquisition unit for acquiring customer service information representing a content of a conversation made between a customer and a customer-service-handling-person and representing a state of the customer-service-handling-person; a calculation unit for calculating a similarity level between past case information representing a past case concerning the conversation and the customer service information representing a content of the conversation; a diagnosis unit for diagnosing a state of the customer-service-handling-person, based on diagnosis criterion information serving as a criterion when diagnosing the state of the customer-service-handling-person, and based on the customer service information; and a generation unit for, based on the similarity level calculated by the calculation unit and the state of the customer-service-handling-person diagnosed by the diagnosis unit, generating support necessity information representing a degree of necessity for supporting

Abstract: The purpose of the present disclosure is to provide a computer, an information processing method, and a network system by which information relating to a trend of a mental or physical state of a subject can be acquired more easily than before. Provided is a computer including: a memory configured to store first data obtained from a strand of hair acquired from a subject and second data obtained from a specimen acquired from the subject, the specimen being different in acquisition time from the strand of hair; and a processor configured to generate a trend of a mental or physical state of the subject based on the first data and the second data.

Abstract: The present invention provides a mirror display that has improved design aesthetics and makes it possible to sufficiently improve visibility in mirror mode in dark environments. The mirror display according to the present invention includes a half mirror plate having a half mirror layer, a display device, a case, and an auxiliary illumination unit that includes an auxiliary light source. The case supports at least the half mirror plate and the display device and includes an outer frame that covers an edge of a front surface of the half mirror plate when viewed in a plan view from a viewing side. The display device is arranged on a rear side of the half mirror plate. The auxiliary light source is arranged on the rear side of the half mirror plate, the display device, or the outer frame. The auxiliary illumination unit is controlled separately from the display device and emits light towards the viewing side when the mirror display is in mirror mode.

Abstract: The present invention provides a mirror display that has improved design aesthetics and makes it possible to sufficiently improve visibility in mirror mode in dark environments. The mirror display according to the present invention includes a half mirror plate having a half mirror layer, a display device, a case, and an auxiliary illumination unit that includes an auxiliary light source. The case supports at least the half mirror plate and the display device and includes an outer frame that covers an edge of a front surface of the half mirror plate when viewed in a plan view from a viewing side. The display device is arranged on a rear side of the half mirror plate. The auxiliary light source is arranged on the rear side of the half mirror plate, the display device, or the outer frame. The auxiliary illumination unit is controlled separately from the display device and emits light towards the viewing side when the mirror display is in mirror mode.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: In a multilayered sintered sliding member, a porous sintered alloy layer comprising 3 to 10 wt. % of an Sn component, 10 to 30 wt. % of an Ni component, 0.5 to 4 wt. % of a P component, 30 to 50 wt. % of an Fe component, 1 to 10 wt. % of a high-speed tool steel component, 1 to 5 wt. % of a graphite component, and 20 to 55 wt. % of a copper component is integrally diffusion-bonded to a backing plate.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: A transparent solar concentrator is provided for converting solar energy into electrical energy. The solar concentrator includes a first light transmissive substrate, a plurality of solar cells for receiving solar energy and converting the solar energy into electrical energy, the plurality of solar cells positioned relative to the first substrate, and a plurality of light redirecting elements arranged in the first light transmissive substrate. Each of the plurality of light redirecting elements is configured to direct light incident on a first side of the first light transmissive substrate to a respective one of the plurality of solar cells on an opposite side of the first light transmissive substrate.

Abstract: To facilitate the production of a cab in the form of a box by joining side, rear and roof panels to pillars, and to improve the productivity. Pillars forming the cab (2) include composite pillars (16, 18) obtained by juxtaposing and joining together the pairs of pillar members (20, 22), and panel assemblies (4, 6, 8) adjacent to the pillar members (20, 22) are joined to the pillar members (20, 22) of the composite pillars (16, 18).

Abstract: A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: In a multilayered sintered sliding member, a porous sintered alloy layer comprising 3 to 10 wt. % of an Sn component, 10 to 30 wt. % of an Ni component, 0.5 to 4 wt. % of a P component, 30 to 50 wt. % of an Fe component, 1 to 10 wt. % of a high-speed tool steel component, 1 to 5 wt. % of a graphite component, and 20 to 55 wt. % of a copper component is integrally diffusion-bonded to a backing plate.

Abstract: To facilitate the production of a cab in the form of a box by joining side, rear and roof panels to pillars, and to improve the productivity. Pillars forming the cab (2) include composite pillars (16, 18) obtained by juxtaposing and joining together the pairs of pillar members (20, 22), and panel assemblies (4, 6, 8) adjacent to the pillar members (20, 22) are joined to the pillar members (20, 22) of the composite pillars (16, 18).

Abstract: A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.

Abstract: A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

Abstract: A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.