Abstract: A method of manufacturing an optical semiconductor element includes: stacking a plurality of compound semiconductor layers on a first substrate containing a compound semiconductor; dividing the first substrate into small pieces; forming terraces, grooves, walls, and a first mesa for a waveguide on a second substrate containing silicon; jointing at least one small piece to the second substrate after the forming; wet-etching the first substrate so as to expose the compound semiconductor layers after the jointing; and forming a second mesa opposite to the first mesa from the compound semiconductor layers; wherein the grooves are formed on both sides of the first mesa, the terraces are formed on both sides of the first mesa and the grooves, and the walls are arranged in an extending direction of each groove.

Abstract: A multimode interference device includes: man MMI semiconductor mesa having first and second end faces that are arranged in a direction of a first axis, and first and second side faces that extend in the direction of the first axis; first and second semiconductor mesas disposed apart from the first and second side faces, respectively; an embedding region covering the MMI semiconductor mesa and the first and second semiconductor mesas and having first and second openings at the first and second semiconductor mess, respectively; and first and second metal bodies making contact with the first and second semiconductor mesas through the first and second openings, respectively. The first and second end faces have multiple first ports and multiple second ports, respectively. The first semiconductor mesa, the MMI semiconductor mesa, and the second semiconductor mesa are arranged in a direction of a second axis intersecting the first axis.

Abstract: A multimode interference device includes: an MMI semiconductor mesa having first and second end faces that are arranged in a direction of a first axis, and first and second side faces that extend in the direction of the first axis; first and second semiconductor mesas disposed apart from the first and second side faces, respectively; an embedding region covering the MMI semiconductor mesa and the first and second semiconductor mesas and having first and second openings that are disposed on the first and second semiconductor mesas, respectively; and first and second metal bodies making contact with the first and second semiconductor mesas through the first and second openings, respectively. The first and second end faces have multiple first ports and multiple second ports, respectively. The first semiconductor mesa, the MMI semiconductor mesa, and the second semiconductor mesa are arranged in a direction of a second axis intersecting the first axis.

Abstract: A semiconductor optical modulator includes an input waveguide provided on a side of a substrate, a first and a second output waveguides provided on the same side of the substrate, a dividing portion optically connected to the input waveguide, eight arm waveguides optically connected to the dividing portion, a first multiplexing portion optically connecting four of the arm waveguides to the first output waveguide, a second multiplexing portion optically connecting the other four of the arm waveguides to the second output waveguide, and modulation electrodes provided on respective ones of the eight arm waveguides. The first and second output waveguides are arranged symmetrically about the input waveguide.

Abstract: [Object] To use pannier boxes provided on left and right of a vehicle body in a self-supporting state when removed from the vehicle body. [Means for solving the object] A first pannier box 17 and a second pannier box 18 are removably mounted on a vehicle body under left and right lateral sides of a seat 5. When each of the first pannier box and the second pannier box is dismounted from the vehicle body, a first connecting member 80 provided in an inner lateral surface 17b of the first pannier box 17 and a second connecting member 82 provided in an inner lateral surface 18b of the second pannier box 18 are connected in a condition where the inner lateral surfaces 17b, 18b face each other. An engaging hole 81 which extends in a vertical direction is provided in the first connecting member 80, and an engaging projection 83 which extends in the vertical direction is provided in the second connecting member 82.

Abstract: A semiconductor optical device includes a semiconductor substrate having first to fourth regions, a 90-degree optical hybrid provided in the third region on a principal surface of the semiconductor substrate, first and second waveguides provided in the first region and being optically coupled to the 90-degree optical hybrid, a photodiode provided in the fourth region, a third waveguide provided in the second region to optically couple the 90-degree optical hybrid to the photodiode, and a metal layer provided on a back surface of the semiconductor substrate. The metal layer includes a first part provided in the first region and a second part provided in the second region that is spaced apart from the first part by a distance. The 90-degree optical hybrid has a first length. The distance between the first and second parts is more than or equal to the first length.

Abstract: An optical module that implements an MMI device including an optical hybrid primarily made of semiconductor material is disclosed. The MMI device, which has a rectangular plane shape and includes multi-mode couplers, is mounted on a carrier. The carrier provides a step extending in a whole lateral width of a top surface thereof, where the step makes a gap against the MMI device in an area where the MMI couplers are formed.

Abstract: A semiconductor optical device includes a semiconductor substrate having first to fourth regions, a 90-degree optical hybrid provided in the third region on a principal surface of the semiconductor substrate, first and second waveguides provided in the first region being optically coupled to the 90-degree optical hybrid, a photodiode provided in the fourth region, a third waveguide provided in the second region to optically couple the 90-degree optical hybrid to the photodiode, and a metal layer provided on a back surface of the semiconductor substrate. The metal layer includes a first part provided in the first region and a second part provided in the second region spaced apart from the first region by a distance. The 90-degree optical hybrid has a first length. The distance between the first and second parts is more than or equal to the first length.

Abstract: An optical module that implements an MMI device including an optical hybrid primarily made of semiconductor material is disclosed. The MMI device, which has a rectangular plane shape and includes multi-mode couplers, is mounted on a carrier. The carrier provides a step extending in a whole lateral width of a top surface thereof, where the step makes a gap against the MMI device in an area where the MMI couplers are formed.

Abstract: A semiconductor optical device includes a substrate including first and second regions arranged in a first direction, a photodiode disposed on the first region, an optical waveguide disposed on the second region, and a buried layer disposed on a side surface of the photodiode. The side surface of the photodiode extends in the first direction. The photodiode has a first end surface intersecting with the first direction, and the optical waveguide is in direct contact with the first end surface. The buried layer is composed of a III-V compound semiconductor doped with a transition metal. The photodiode includes a stacked semiconductor layer including a first cladding layer, a light-absorbing layer and a second cladding layer stacked in that order on the substrate. The light-absorbing layer has a side surface having at least a portion recessed with respect to a side surface of the first cladding layer.

Abstract: A semiconductor optical device includes a substrate including first and second regions arranged in a first direction, a photodiode disposed on the first region, an optical waveguide disposed on the second region, and a buried layer disposed on a side surface of the photodiode. The side surface of the photodiode extends in the first direction. The photodiode has a first end surface intersecting with the first direction, and the optical waveguide is in direct contact with the first end surface. The buried layer is composed of a III-V compound semiconductor doped with a transition metal. The photodiode includes a stacked semiconductor layer including a first cladding layer, a light-absorbing layer and a second cladding layer stacked in that order on the substrate. The light-absorbing layer has a side surface having at least a portion recessed with respect to a side surface of the first cladding layer.

Abstract: An information display system for a vehicle includes an information display device, a mounting member, and a personal digital assistant. The information display device is mounted on a vehicle and is configured to display vehicle information. The mounting member is fixed to the vehicle. The personal digital assistant is detachably mounted on the vehicle via the mounting member in such a manner that at least a part of the vehicle information displayed on the information display device becomes non-visible by the personal digital assistant and includes a communication device and a display device. The communication device is configured to acquire at least vehicle information which is displayed on the information display device and which becomes non-visible from an electric accessory unit mounted on the vehicle. The display device is configured to display the vehicle information acquired using the communication device.

Abstract: An information display system for a vehicle includes an information display device, a mounting member, and a personal digital assistant. The information display device is mounted on a vehicle and is configured to display vehicle information. The mounting member is fixed to the vehicle. The personal digital assistant is detachably mounted on the vehicle via the mounting member in such a manner that at least a part of the vehicle information displayed on the information display device becomes non-visible by the personal digital assistant and includes a communication device and a display device. The communication device is configured to acquire at least vehicle information which is displayed on the information display device and which becomes non-visible from an electric accessory unit mounted on the vehicle. The display device is configured to display the vehicle information acquired using the communication device.

Abstract: A vehicle may include a body frame, an engine body mounted on the body frame, an exhaust pipe connected to a cylinder head of the engine body, and a canister supported to the engine body. The exhaust pipe(s) includes a portion extending along one side surface of a cylinder block of the engine body. The canister is located between the cylinder block and the portion of the exhaust pipe(s) extending along one side surface of the cylinder block.

Abstract: A vehicle may include a body frame, an engine body mounted on the body frame, an exhaust pipe connected to a cylinder head of the engine body, and a canister supported to the engine body. The exhaust pipe(s) includes a portion extending along one side surface of a cylinder block of the engine body. The canister is located between the cylinder block and the portion of the exhaust pipe(s) extending along one side surface of the cylinder block.

Abstract: An object of the present invention is to provide an arcing horn system having a highly efficient dynamic current shutoff property including a dynamic current shutoff capability, for example, enough for the short circuit fault and other object thereof is to provide an arcing horn system capable of repeatedly maintaining the good dynamic current shutoff capability.

Abstract: An object of the present invention is to provide an arcing horn system having a highly efficient dynamic current shutoff property including a dynamic current shutoff capability, for example, enough for the short circuit fault and other object thereof is to provide an arcing horn system capable of repeatedly maintaining the good dynamic current shutoff capability. In an arcing horn system, an insulative tube 21 for surrounding a front end side of an arcing horn 11, 12 is provided and an air vent 21a communicating from a front end portion of the arcing horn 11, 12 to a front end surface of the insulative tube 21 is formed on the insulative tube 21, so that the arc jet is blown off from the air vent 21a upon the flashover in accordance with the thunder stroke. The insulative tube 21 is made of a polyamide resin. A cap 30 for covering the front end side of the insulative tube 21 is disposed so as to prevent the intrusion of the rain water into the air vent 21a.

Abstract: The present invention provides a thermomechanical treatment means for a Fe—Mn—Si-based shape memory alloy having specified components with Nb, C addition with simple deformation prior to aging. Such deformation treatment prior to aging is carried out in the inventions of the prior applications in a temperature range of from 500° C. to 800° C. According to the present invention, however, the deformation treatment prior to the aging treatment can be successfully carried out not at high temperature but at room temperature, if the deformation ratio is in a specified range. The technical meaning of the present invention must be clearly understood as compared to the prior art and the inventions of the prior applications because the present invention allows the treatment at room temperature while the others require troublesome treatment at high temperature so that there is significant difference therebetween.

Abstract: A NbC-added Fe—Mn—Si-based shape memory alloy is provided, showing a shape memory property even if a special treatment such as training is not performed. A Fe—Mn—Si-based shape memory alloy containing Nb and C is rolled by 10 to 30% in a temperature range of 500 to 800° C. under austenite condition, then, subjected to an aging treatment by heating in a temperature range of 400 to 1000° C. for 1 minute to 2 hours.

Abstract: To remarkably improve shape-memory properties without the need for strictly controlling the composition, the present invention provides a Ti—Ni-based shape-memory alloy having a titanium content within a range of from 50 to 55 atomic %, which comprises an amorphous alloy heat-treated at a temperature of from 600 to 800 K, in which subnanometric precipitates generating coherent elastic strains are formed and distributed in the bcc parent phase(B2).