Abstract: An imaging device includes a plurality of pixels two-dimensionally disposed. At least part of the plurality of pixels includes a first photoelectric conversion unit and a second photoelectric conversion unit provided in a semiconductor substrate and each including a first semiconductor region of a first conductivity type for accumulating a signal charge, a first isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion unit and including a second semiconductor region forming a first potential barrier for the signal charge in the first semiconductor region, and a second isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion units and including a trench isolation forming a second potential barrier higher than the first potential barrier for the signal charge in the first semiconductor region.

Abstract: A display apparatus includes a pixel including a first sub-pixel and a second sub-pixel disposed adjacently to each other, and the second sub-pixel is different in emission color from the first sub-pixel. Each of the first sub-pixel and the second sub-pixel includes a first electrode, a second electrode, and a functional layer disposed between the first electrode and the second electrode. The first electrode of the first sub-pixel includes a first pixel electrode and a second pixel electrode. The first electrode of the second sub-pixel includes a first pixel electrode and a second pixel electrode. The second pixel electrode of the first sub-pixel is disposed in each of regions between the first sub-pixel and the second sub-pixel.

Abstract: Provided is a solid state image pickup element including a MOS type transistor which amplifies a signal which is based on electric charges generated in a photoelectric conversion unit of a pixel. A channel region of the transistor is divided into a source-side region and a drain-side region. When a conductivity type of the transistor is defined as a first conductivity type and a conductivity type which is opposite to the first conductivity type is defined as a second conductivity type, a concentration of a first conductivity type impurity in the source-side region is higher than a concentration of the first conductivity type impurity in the drain-side region or a concentration of a second conductivity type impurity in the drain-side region is higher than a concentration of the second conductivity type impurity in the source-side region.

Abstract: A display device in which selection circuits and display blocks are arranged is provided. Each of display blocks comprises signal lines extending in a column direction and pixels arranged in a matrix pattern. Pixels each comprise a light emitting element. Each of selection circuits switches a signal line to which to supply an image signal among signal lines such that the image signal is written to each pixel aligned in a row direction among pixels. In one frame period, an order in which signal lines corresponding to respective pixels arranged in a first row among the pixels aligned in the row direction are selected, and an order in which signal lines corresponding to respective pixels arranged in a second row different to the first row among the pixels aligned in the row direction are selected are different to each other.

Abstract: The capacitance value of the input node is set to a first capacitance value when a first potential is supplied to the switch. The capacitance value of the input node is set to a second capacitance value which is smaller than the first capacitance value when a second potential is supplied to the switch. The potential supplied to the switch is kept at a third potential which is a potential between the first potential and the second potential in a part of at least one of a period until the potential is set to the first potential from the second potential and a period until the potential is set to the second potential from the first potential.

Abstract: A first signal line, a second signal line, a first line, and a second line are disposed in an identical direction on an identical layer. A distance between the first signal line and the second signal line is larger than a distance between the first signal line and the first line or larger than a distance between the second signal line and the second line.

Abstract: The solid-state image sensor includes image sensing pixels, first and second focus detection pixels configured to respectively detect lights passing through different regions of a pupil of an image sensing lens. The sensor includes a semiconductor substrate including photoelectric converters of the image sensing pixels, a photoelectric converter and a first well contact region of the first focus detection pixel, and a photoelectric converter and a second well contact region of the second focus detection pixel, a first contact plug electrically connected to the first well contact region, and a second contact plug electrically connected to the second well contact region. The relative position of the first well contact region in the first focus detection pixel differs from a relative position of the second well contact region in the second focus detection pixel.

Abstract: The solid-state image sensor includes image sensing pixels, first and second focus detection pixels configured to respectively detect lights passing through different regions of a pupil of an image sensing lens. The sensor includes a semiconductor substrate including photoelectric converters of the image sensing pixels, a photoelectric converter and a first well contact region of the first focus detection pixel, and a photoelectric converter and a second well contact region of the second focus detection pixel, a first contact plug electrically connected to the first well contact region, and a second contact plug electrically connected to the second well contact region. The relative position of the first well contact region in the first focus detection pixel differs from a relative position of the second well contact region in the second focus detection pixel.

Abstract: Provided is a solid state image pickup element including a MOS type transistor which amplifies a signal which is based on electric charges generated in a photoelectric conversion unit of a pixel. A channel region of the transistor is divided into a source-side region and a drain-side region. When a conductivity type of the transistor is defined as a first conductivity type and a conductivity type which is opposite to the first conductivity type is defined as a second conductivity type, a concentration of a first conductivity type impurity in the source-side region is higher than a concentration of the first conductivity type impurity in the drain-side region or a concentration of a second conductivity type impurity in the drain-side region is higher than a concentration of the second conductivity type impurity in the source-side region.

Abstract: An imaging device includes a plurality of pixels two-dimensionally disposed. At least part of the plurality of pixels includes a first photoelectric conversion unit and a second photoelectric conversion unit provided in a semiconductor substrate and each including a first semiconductor region of a first conductivity type for accumulating a signal charge, a first isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion unit and including a second semiconductor region forming a first potential barrier for the signal charge in the first semiconductor region, and a second isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion units and including a trench isolation forming a second potential barrier higher than the first potential barrier for the signal charge in the first semiconductor region.

Abstract: The capacitance value of the input node is set to a first capacitance value when a first potential is supplied to the switch. The capacitance value of the input node is set to a second capacitance value which is smaller than the first capacitance value when a second potential is supplied to the switch. The potential supplied to the switch is kept at a third potential which is a potential between the first potential and the second potential in a part of at least one of a period until the potential is set to the first potential from the second potential and a period until the potential is set to the second potential from the first potential.

Abstract: A solid-state image sensor comprising pixels, each including a first region of a first conductivity type, a second region of the first conductivity type formed in a position shifted from the first region in a first direction, a third region of a second conductivity type formed between the first and second regions, a fourth region of the first conductivity type formed in a position shifted from the third region in a second direction, a first gate electrode of a transistor arranged between the first and fourth regions, a second gate electrode of a transistor arranged between the second and fourth regions, and a fifth region of the second conductivity type formed between the first and second gate electrodes and between the third and fourth regions, and a concentration of the fifth region is higher than that of the third region.

Abstract: An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.

Abstract: In an image pickup apparatus, during a period from a start of an accumulation period of electric carriers to an end of a reading period for a first photoelectric conversion unit and a second photoelectric conversion unit, the number of times an on-state voltage is supplied to a gate electrode of a first transfer transistor is larger than the number of times an on-state voltage is supplied to a gate electrode of a second transfer transistor. Additionally, among a plurality of pixels, in a pixel having a shortest distance from the gate electrode of the second transfer transistor to a contact plug, a distance from the gate electrode of the second transfer transistor to the contact plug is shorter than a distance from the gate electrode of the first transfer transistor to the contact plug.

Abstract: A solid-state image sensor comprising pixels, each including a first region of a first conductivity type, a second region of the first conductivity type formed in a position shifted from the first region in a first direction, a third region of a second conductivity type formed between the first and second regions, a fourth region of the first conductivity type formed in a position shifted from the third region in a second direction, a first gate electrode of a transistor arranged between the first and fourth regions, a second gate electrode of a transistor arranged between the second and fourth regions, and a fifth region of the second conductivity type formed between the first and second gate electrodes and between the third and fourth regions, and a concentration of the fifth region is higher than that of the third region.

Abstract: An image sensing device includes a plurality of photoelectric conversion portions. The device further includes a semiconductor substrate having a first surface for receiving incident light and a second surface on an opposite side to the first surface, the photoelectric conversion portions being provided therein, a first non-metal region arranged on a second surface side and arranged at a position at least partially overlapping with the photoelectric conversion portions, a second non-metal region arranged to be in contact with a side surface of the first non-metal region, and a reflection layer arranged on an opposite side of the first non-metal region to the semiconductor substrate. A refractive index of the first non-metal region is higher than a refractive index of the second non-metal region.

Abstract: In an image pickup apparatus, during a period from a start of an accumulation period of electric carriers to an end of a reading period for a first photoelectric conversion unit and a second photoelectric conversion unit, the number of times an on-state voltage is supplied to a gate electrode of a first transfer transistor is larger than the number of times an on-state voltage is supplied to a gate electrode of a second transfer transistor. Additionally, among a plurality of pixels, in a pixel having a shortest distance from the gate electrode of the second transfer transistor to a contact plug, a distance from the gate electrode of the second transfer transistor to the contact plug is shorter than a distance from the gate electrode of the first transfer transistor to the contact plug.

Abstract: A first signal line, a second signal line, a first line, and a second line are disposed in an identical direction on an identical layer. A distance between the first signal line and the second signal line is larger than a distance between the first signal line and the first line or larger than a distance between the second signal line and the second line.

Abstract: An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions and arranged for at least some of the photoelectric converters, absorbing portions arranged around the reflection regions, an insulator portion arranged to surround the absorbing portions, and an interlayer insulating film arranged between the first face and a group of the reflection portions, the light absorbing portions, and the insulator portion, and a reflectance of the light absorbing portions is smaller than a reflectance of the reflection regions, and a light transmittance of the light absorbing portions is smaller than a light transmittance of the insulator portion.

Abstract: An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.