Abstract: A method for manufacturing an image pickup apparatus in which a second semiconductor region of first conductive type which becomes a well contact region is disposed adjacent to a first semiconductor region via an element isolation region in a pixel which has a well contact region among a plurality of pixels. A first mask which has openings in a region which becomes a first semiconductor region, an element isolation region disposed between the region which becomes the first semiconductor region and a region which becomes a second semiconductor region, and a region which becomes the second semiconductor region is disposed, and the first semiconductor region is formed in the region which becomes the first semiconductor region by conducting ion implantation of second conductive type at an oblique angle to a normal line of a principal surface using the first mask.

Abstract: A solid-state imaging device including two semiconductor substrates arranged in layers is provided. Each semiconductor substrate has a semiconductor region in which a circuit constituting a part of a pixel array is formed. The circuits in the two semiconductor substrates are electrically connected to each other. Each semiconductor substrate includes one or more contact plugs for supplying a voltage to the semiconductor region. The number of the contact plugs of one semiconductor substrate in the pixel array is different from the number of the contact plugs of the other semiconductor substrate in the pixel array.

Abstract: A solid-state imaging apparatus which includes a semiconductor portion having a first face on the light incident side and a second face opposite to the first face, and an optical system arranged on the first face, comprising a first semiconductor region of a first conductivity type provided on the second face side in the semiconductor region, a photoelectric conversion portion provided in the semiconductor portion so as to surround the first semiconductor region, including a second semiconductor region of the first conductivity type, and a gate electrode arranged between the first and the second semiconductor regions on the second face, for transferring a charge generated in the photoelectric conversion portion to the first semiconductor region, wherein the optical system is configured so that a light intensity in the second semiconductor region is higher than that in the first semiconductor region.

Abstract: A solid-state imaging device including two semiconductor substrates arranged in layers is provided. Each semiconductor substrate has a semiconductor region in which a circuit constituting a part of a pixel array is formed. The circuits in the two semiconductor substrates are electrically connected to each other. Each semiconductor substrate includes one or more contact plugs for supplying a voltage to the semiconductor region. The number of the contact plugs of one semiconductor substrate in the pixel array is different from the number of the contact plugs of the other semiconductor substrate in the pixel array.

Abstract: An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions and arranged for at least some of the photoelectric converters, absorbing portions arranged around the reflection regions, an insulator portion arranged to surround the absorbing portions, and an interlayer insulating film arranged between the first face and a group of the reflection portions, the light absorbing portions, and the insulator portion, and a reflectance of the light absorbing portions is smaller than a reflectance of the reflection regions, and a light transmittance of the light absorbing portions is smaller than a light transmittance of the insulator portion.

Abstract: A solid-state imaging device including two semiconductor substrates arranged in layers is provided. Each semiconductor substrate has a semiconductor region in which a circuit constituting a part of a pixel array is formed. The circuits in the two semiconductor substrates are electrically connected to each other. Each semiconductor substrate includes one or more contact plugs for supplying a voltage to the semiconductor region. The number of the contact plugs of one semiconductor substrate in the pixel array is different from the number of the contact plugs of the other semiconductor substrate in the pixel array.

Abstract: An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions and arranged for at least some of the photoelectric converters, absorbing portions arranged around the reflection regions, an insulator portion arranged to surround the absorbing portions, and an interlayer insulating film arranged between the first face and a group of the reflection portions, the light absorbing portions, and the insulator portion, and a reflectance of the light absorbing portions is smaller than a reflectance of the reflection regions, and a light transmittance of the light absorbing portions is smaller than a light transmittance of the insulator portion.

Abstract: A solid-state imaging apparatus which includes a semiconductor portion having a first face on the light incident side and a second face opposite to the first face, and an optical system arranged on the first face, comprising a first semiconductor region of a first conductivity type provided on the second face side in the semiconductor region, a photoelectric conversion portion provided in the semiconductor portion so as to surround the first semiconductor region, including a second semiconductor region of the first conductivity type, and a gate electrode arranged between the first and the second semiconductor regions on the second face, for transferring a charge generated in the photoelectric conversion portion to the first semiconductor region, wherein the optical system is configured so that a light intensity in the second semiconductor region is higher than that in the first semiconductor region.

Abstract: The solid-state image sensor includes image sensing pixels, first and second focus detection pixels configured to respectively detect lights passing through different regions of a pupil of an image sensing lens. The sensor includes a semiconductor substrate including photoelectric converters of the image sensing pixels, a photoelectric converter and a first well contact region of the first focus detection pixel, and a photoelectric converter and a second well contact region of the second focus detection pixel, a first contact plug electrically connected to the first well contact region, and a second contact plug electrically connected to the second well contact region. The relative position of the first well contact region in the first focus detection pixel differs from a relative position of the second well contact region in the second focus detection pixel.

Abstract: An image sensor includes a semiconductor layer having first and second faces, and a wiring structure arranged on a side of the first face, wherein photoelectric converters are arranged in the semiconductor layer and light is incident on the second face. The wiring structure includes reflection portions having reflection regions and arranged for at least some of the photoelectric converters, absorbing portions arranged around the reflection regions, an insulator portion arranged to surround the absorbing portions, and an interlayer insulating film arranged between the first face and a group of the reflection portions, the light absorbing portions, and the insulator portion, and a reflectance of the light absorbing portions is smaller than a reflectance of the reflection regions, and a light transmittance of the light absorbing portions is smaller than a light transmittance of the insulator portion.

Abstract: An image sensing device includes a plurality of photoelectric conversion portions. The device further includes a semiconductor substrate having a first surface for receiving incident light and a second surface on an opposite side to the first surface, the photoelectric conversion portions being provided therein, a first non-metal region arranged on a second surface side and arranged at a position at least partially overlapping with the photoelectric conversion portions, a second non-metal region arranged to be in contact with a side surface of the first non-metal region, and a reflection layer arranged on an opposite side of the first non-metal region to the semiconductor substrate. A refractive index of the first non-metal region is higher than a refractive index of the second non-metal region.

Abstract: A method of manufacturing an image sensor having a plurality of pixels, each pixel having a photoelectric converter including an accumulation region, and a transfer gate, the accumulation region extending under a corresponding transfer gate, the plurality of pixels including a plurality of pixel groups, each pixel group including N adjacent pixels, and the channels of the N adjacent pixels, in each pixel group, being configured to transfer the charges of the N adjacent pixels away from each other, the method comprising a step of forming a resist pattern having one opening corresponding to each pixel group, and a step of forming a charge accumulation region for each of the N adjacent pixels by implanting ions into a substrate through the one opening of the resist pattern along N ion implantation directions so as to implant the ions under the transfer gate of each of the N adjacent pixels.

Abstract: A vacuum evaporation apparatus includes an evaporation source, a combined conveyance body in which a glass substrate is superposed and aligned on a shadow mask fixed to a holding member, and a weight plate placed on the glass substrate presses the glass substrate to the shadow mask by gravity for holding the glass substrate, and a convey mechanism for conveying the combined conveyance body. The weight plate includes a shock absorbing member for absorbing an impact applied to the combined conveyance body in an in-plane direction of the glass substrate. The shock absorbing member includes a sliding body connected to the weight plate via a spring and having multiple recesses formed in a surface of the sliding body facing the glass substrate, and includes slide balls disposed in the multiple recesses.

Abstract: Provided is a film formation apparatus capable of reducing vibration and deformation that may be transmitted to an alignment mechanism and thereby suppressing misalignment between a substrate and a mask in a surface direction. The film formation apparatus includes: a film forming chamber; a supporting member; and an alignment mechanism provided on the supporting member in which: the supporting member includes a supporting plate for placing the alignment mechanism, and a leg portion; the supporting plate is provided so as to be spaced apart from a top board of the film forming chamber via the leg portion; and at least a part of the supporting plate is formed of a damping material capable of converting vibration transmitted to the supporting plate into thermal energy, thereby suppressing the vibration.

Abstract: A method of manufacturing an image sensor having a plurality of pixels, each pixel having a photoelectric converter including an accumulation region, and a transfer gate, the accumulation region extending under a corresponding transfer gate, the plurality of pixels including a plurality of pixel groups, each pixel group including N adjacent pixels, and the channels of the N adjacent pixels, in each pixel group, being configured to transfer the charges of the N adjacent pixels away from each other, the method comprising a step of forming a resist pattern having one opening corresponding to each pixel group, and a step of forming a charge accumulation region for each of the N adjacent pixels by implanting ions into a substrate through the one opening of the resist pattern along N ion implantation directions so as to implant the ions under the transfer gate of each of the N adjacent pixels.

Abstract: A particle movement-type display apparatus is constituted by a pixel portion, a peripheral area around the pixel portion, and particles. At least a part of the peripheral area around the pixel portion is provided with a recess portion capable of accommodating a part of the particles therein.

Abstract: Provided is a weight plate of a vacuum evaporation apparatus, and a vacuum evaporation apparatus, which may prevent occurrence of displacement due to an impact or the like during a conveyance by a convey mechanism after a shadow mask and a glass substrate are superposed and aligned. The glass substrate is superposed and aligned on a top surface of a tension mask as the shadow mask fixed to a mask holding member. Then, the weight plate is placed on the glass substrate and presses the glass substrate by gravity to form a combined conveyance body. A liquid metal is filled in a hollow part of the weight plate at a filling factor of from more than 25% to less than 85% or other shock absorbing mechanism is provided for absorbing an impact applied to the combined conveyance body.

Abstract: When a position of a film formation mask is recognized by irradiating the film formation mask with light, an image having a high contrast cannot be obtained, which unstabilizes reproducibility of measurement accuracy for an alignment mark position, leading to an alignment error between a substrate and a mask. Provided is a film formation mask including a mask sheet having a positioning opening and a mask frame, in which a reflective member having a reflectance higher than that of the mask sheet is provided to the positioning opening. When light is irradiated onto the positioning opening of the film formation mask, an intensity difference between light reflected by the mask sheet and light reflected by the reflective member becomes stable. Therefore, the position of the film formation mask may be determined with high reproducibility.

Abstract: Provided are a film formation apparatus and a film formation method which are capable of forming a pixel pattern with good dimensional accuracy and with reduced misalignment in a plane direction between a substrate and a mask when the substrate is pressed against the mask. The film formation apparatus includes an alignment mechanism for aligning a substrate and a mask with each other and a pressing mechanism for pressing the substrate against the mask with a contact member provided to one end of a pressing body, which are provided in a vacuum chamber. After alignment between the substrate and the mask by the alignment mechanism, the contact member of the pressing body is brought into contact with a surface of the substrate, which is on a side opposite to the mask, to press the substrate.

Abstract: In a vapor deposition method of forming a film of an organic compound on a substrate, a material containing portion filled with a vapor deposition material is heated, to thereby evaporate or sublimate the vapor deposition material and discharge the vapor deposition material to a film formation space of a vacuum chamber through a plurality of pipings connected to the material containing portion, and a piping having a smaller conductance among the pipings having different conductances is provided with a flow rate adjusting mechanism for controlling an amount of the vapor deposition material released into the vacuum chamber, whereby a film formation speed can be adjusted finely.