Patents by Inventor Takehiro Kato

Takehiro Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12158744
    Abstract: According to one embodiment, an analysis device performs an analysis related to a plurality of tasks of a manufacturing process. The analysis device receives an image when each of the plurality of tasks is performed. The analysis device receives the images from an imaging device acquiring the images. The analysis device receives a detection signal from a tool used in at least one of the plurality of tasks. The detection signal is detected by the tool. The analysis device refers to end determination data for determining an end of each of the plurality of tasks. The analysis device determines the end of each of the plurality of tasks based on the images, the detection signal, and the end determination data.
    Type: Grant
    Filed: March 2, 2022
    Date of Patent: December 3, 2024
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takanori Yoshii, Hiroaki Nakamura, Takehiro Kato, Makoto Tsuji, Yasuo Namioka
  • Patent number: 12057498
    Abstract: A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.
    Type: Grant
    Filed: August 24, 2021
    Date of Patent: August 6, 2024
    Assignee: DENSO CORPORATION
    Inventors: Yuichi Takeuchi, Katsumi Suzuki, Yusuke Yamashita, Takehiro Kato
  • Patent number: 12030745
    Abstract: An elevator device includes a guide rail (1), a car (3), and a guide device (4). The car (3) is movable in a horizontal direction at a specific height. The guide device (4) includes a supporting member (11) and a guide member (12). The guide member (12) is displaceable to a first position for restricting movement of the car (3) in the horizontal direction and guiding up-down movement of the car (3) and a second position where the guide member (12) does not come into contact with the guide rail (1) when the car (3) moves in the horizontal direction.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: July 9, 2024
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Takehiro Kato, Yasuo Watanabe, Taiki Morikura, Yoshinao Takahashi
  • Publication number: 20240177973
    Abstract: A plasma processing apparatus includes a plasma processing chamber; a substrate support; a lower electrode; an RF power supply; and an upper electrode assembly. The upper electrode assembly includes a gas diffusion plate; an insulating plate; and an upper electrode plate arranged between the gas diffusion plate and the insulating plate, and having a plurality of first through holes and a plurality of second through holes. The insulating plate includes an inner annular protrusion and an outer annular protrusion protruding downward from a lower surface of the insulating plate, and the insulating plate has a plurality of first gas introduction holes, a plurality of second gas introduction holes, and a plurality of third gas introduction holes.
    Type: Application
    Filed: February 1, 2024
    Publication date: May 30, 2024
    Applicant: Tokyo Electron Limited
    Inventors: Koki HIDAKA, Koichi KAZAMA, Takanori SATO, Miyu SHIHOMMATSU, Takehiro KATO
  • Publication number: 20230324858
    Abstract: According to one embodiment, a production management device acquires a first short-term plan generated based on a first long-term plan. The first long-term plan is of a plan of production in a prescribed period. The first short-term plan is of a plan of production in a first period. The device acquires first progress data of a progress in a task, and acquires first prediction data by using the first progress data. The first prediction data is of a prediction of a progress in the task. The device revises the first short-term plan based on the first prediction data, and acquires second prediction data by using second progress data. The second progress data is of a progress in the task. The second prediction data is of a prediction of a progress of the production in the prescribed period. The device generates a second long-term plan in the prescribed period.
    Type: Application
    Filed: February 15, 2023
    Publication date: October 12, 2023
    Inventors: Hirotomo OSHIMA, Yuta SHIRAKAWA, Takanori YOSHII, Masamitsu FUKUDA, Takehiro KATO, Keisuke NISHIMURA, Yasuo NAMIOKA
  • Publication number: 20230326096
    Abstract: According to one embodiment, a processing device causes a display of a first object at a position separated from a fastening location of a screw. The first object is virtual and indicates the fastening location. The processing device associates first data and second data when a prescribed physical object contacts the first object and the first data is received from a tool turning the screw. The second data is related to the fastening location.
    Type: Application
    Filed: April 11, 2023
    Publication date: October 12, 2023
    Inventors: Takanori YOSHII, Takashi ISHII, Yoshiyuki HIRAHARA, Takehiro KATO, Yasuo NAMIOKA
  • Publication number: 20230245338
    Abstract: According to one embodiment, a processing system estimates a pose of a worker, a position of an article, an orientation of the article, and a state of the article based on an image of the worker and the article. The processing system further estimates a work spot of the worker on the article based on an estimation result of the pose, an estimation result of the position, and an estimation result of the orientation. The processing system further estimates a task performed by the worker based on an estimation result of the work spot and an estimation result of the state.
    Type: Application
    Filed: January 20, 2023
    Publication date: August 3, 2023
    Inventors: Hirotomo OSHIMA, Yuta SHIRAKAWA, Takanori YOSHII, Takehiro KATO, Keisuke NISHIMURA, Yasuo NAMIOKA
  • Publication number: 20230085797
    Abstract: According to one embodiment, an analysis device performs an analysis related to a plurality of tasks of a manufacturing process. The analysis device receives an image when each of the plurality of tasks is performed. The analysis device receives the images from an imaging device acquiring the images. The analysis device receives a detection signal from a tool used in at least one of the plurality of tasks. The detection signal is detected by the tool. The analysis device refers to end determination data for determining an end of each of the plurality of tasks. The analysis device determines the end of each of the plurality of tasks based on the images, the detection signal, and the end determination data.
    Type: Application
    Filed: March 2, 2022
    Publication date: March 23, 2023
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takanori YOSHII, Hiroaki NAKAMURA, Takehiro KATO, Makoto TSUJI, Yasuo NAMIOKA
  • Publication number: 20220181448
    Abstract: A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20>direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100>direction.
    Type: Application
    Filed: February 23, 2022
    Publication date: June 9, 2022
    Inventors: JUNICHI UEHARA, TAKEHIRO KATO, TADASHI MISUMI, YUSUKE YAMASHITA
  • Publication number: 20220169482
    Abstract: An elevator device includes a guide rail (1), a car (3), and a guide device (4). The car (3) is movable in a horizontal direction at a specific height. The guide device (4) includes a supporting member (11) and a guide member (12). The guide member (12) is displaceable to a first position for restricting movement of the car (3) in the horizontal direction and guiding up-down movement of the car (3) and a second position where the guide member (12) does not come into contact with the guide rail (1) when the car (3) moves in the horizontal direction.
    Type: Application
    Filed: June 17, 2019
    Publication date: June 2, 2022
    Applicant: Mitsubishi Electric Corporation
    Inventors: Takehiro KATO, Yasuo WATANABE, Taiki MORIKURA, Yoshinao TAKAHASHI
  • Publication number: 20220059657
    Abstract: In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.
    Type: Application
    Filed: November 8, 2021
    Publication date: February 24, 2022
    Inventors: MASATO NOBORIO, TAKEHIRO KATO, YUSUKE YAMASHITA
  • Publication number: 20210384343
    Abstract: A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.
    Type: Application
    Filed: August 24, 2021
    Publication date: December 9, 2021
    Inventors: YUICHI TAKEUCHI, KATSUMI SUZUKI, YUSUKE YAMASHITA, TAKEHIRO KATO
  • Publication number: 20210335584
    Abstract: A stage includes: a substrate mounting member having a mounting surface on which a target substrate is mounted; a support member configured to support the substrate mounting member; a refrigerant flow path formed inside the support member along the mounting surface, and including a ceiling surface disposed on the mounting surface side, a bottom surface opposite to the ceiling surface, and an introduction port for introducing a refrigerant formed on the bottom surface; and a heat insulating member including at least a first planar portion covering a portion of the ceiling surface, which faces the introduction port, and a second planar portion covering an inner side surface of a curved portion of the refrigerant flow path.
    Type: Application
    Filed: September 11, 2019
    Publication date: October 28, 2021
    Inventors: Masakatsu KASHIWAZAKI, Toshifumi ISHIDA, Ryo SASAKI, Takehiro KATO
  • Patent number: 10923395
    Abstract: In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: February 16, 2021
    Assignee: DENSO CORPORATION
    Inventors: Yasushi Urakami, Takehiro Kato, Sachiko Aoi
  • Patent number: 10699935
    Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: June 30, 2020
    Assignee: TOKO ELECTRON LIMITED
    Inventors: Shinji Himori, Yoshiyuki Kobayashi, Takehiro Kato, Etsuji Ito
  • Publication number: 20190341308
    Abstract: In a semiconductor device, a semiconductor element is formed in a semiconductor, an interlayer insulating film having a contact hole and containing at least one of phosphorus and boron is disposed above the semiconductor, a metal electrode is disposed above the interlayer insulating film and is connected to the semiconductor element through the contact hole, and the interlayer insulating film is filled with hydrogen.
    Type: Application
    Filed: July 15, 2019
    Publication date: November 7, 2019
    Inventors: Yasushi URAKAMI, Takehiro KATO, Sachiko AOI
  • Patent number: 10147633
    Abstract: A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: December 4, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Himori, Takehiro Kato, Etsuji Ito
  • Publication number: 20180114717
    Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.
    Type: Application
    Filed: December 21, 2017
    Publication date: April 26, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shinji HIMORI, Yoshiyuki KOBAYASHI, Takehiro KATO, Etsuji ITO
  • Patent number: 9859146
    Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: January 2, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Himori, Yoshiyuki Kobayashi, Takehiro Kato, Etsuji Ito
  • Patent number: 9857687
    Abstract: A method of manufacturing a substrate includes applying solder resist ink containing a mixing resin of epoxy-based resin and acrylic-based resin on at least one surface of a substrate body to form a solder resist layer, and irradiating a predetermined portion of the solder resist layer with ultraviolet rays and controlling an amount of irradiation of the ultraviolet rays irradiated to the predetermined of the solder resist layer to form the predetermined portion in transmissivity that transmits light.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: January 2, 2018
    Assignees: TOKAI SHINEI ELECTRONICS INIDUSTRY CO., LTD, YAMATOYA & CO., LTD
    Inventors: Kazunori Tsuge, Yoshihito Tanaka, Koji Akiyama, Kiyoshi Tanaka, Kazuyoshi Nishio, Takehiro Kato, Masaru Murakami, Tadayoshi Saito, Hirotoshi Yoshimura, Akira Inoue, Iwao Numakura, Noriaki Tsukada